Jeong-Yeop Nahm, Ph.D.
Affiliations: | 2000 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"Jeong-Yeop Nahm"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Jerzy Kanicki | grad student | 2000 | University of Michigan | |
| (Amorphous silicon thin-film transistor active-matrix for reflective cholesteric liquid crystal displays.) | ||||
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Publications
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| Hong Y, Nahm JY, Kanicki J. (2004) 100 dpi 4-a-Si:H TFTs active-matrix organic polymer light-emitting display Ieee Journal On Selected Topics in Quantum Electronics. 10: 16-25 |
| Hong Y, Nahm JY, Kanicki J. (2003) Optoelectrical properties of four amorphous silicon thin-film transistors 200 dpi active-matrix organic polymer light-emitting display Applied Physics Letters. 83: 3233-3235 |
| Martin S, Nahm JY, Kanicki J. (2002) Gate-planarized organic polymer thin film transistors Journal of Electronic Materials. 31: 512-519 |
| Martin S, Chiang CS, Nahm JY, et al. (2001) Influence of the amorphous silicon thickness on top gate thin-film transistor electrical performances Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 40: 530-537 |
| Kanicki J, Kim JH, Nahm JY, et al. (2001) Amorphous silicon thin-film transistors base active-matrix organic light-emitting displays Sid Conference Record of the International Display Research Conference. 315-318 |
| Nahm JY, Lan JH, Kanicki J. (2000) High-voltage hydrogenated amorphous silicon thin-film transistor for reflective active-matrix cholesteric LCD Materials Research Society Symposium - Proceedings. 558: 125-128 |
| Martin S, Nahm JY, Kim J, et al. (2000) Many-body universal approach to a-Si:H TFTs electrical instabilities Sid Conference Record of the International Display Research Conference. 423-426 |
| Nahm JY, Lan JH, Kanicki J. (1999) Hydrogenated amorphous-silicon thin-film transistor structure with the buried field plate Technical Digest - International Electron Devices Meeting. 309-312 |