Wonwoo Lee, Ph.D.
Affiliations: | 2006 | University of Alabama, Birmingham, Birmingham, AL, United States |
Area:
Materials Science EngineeringGoogle:
"Wonwoo Lee"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Mary E. Zvanut | grad student | 2006 | UAB | |
| (Deep level defect studies in semi-insulating 4H- and 6H-silicon carbide using optical admittance spectroscopy.) | ||||
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Publications
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| Mitchel WC, Mitchell WD, Landis G, et al. (2007) Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC Journal of Applied Physics. 101 |
| Lee W, Zvanut ME. (2007) A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy Journal of Electronic Materials. 36: 623-628 |
| Lee W, Zvanut ME. (2006) A study of V3+/4+ levels in semi-insulating 6H-SiC using optical admittance and electron paramagnetic resonance spectroscopies Materials Research Society Symposium Proceedings. 911: 231-235 |
| Mitchel WC, Mitchell WD, Smith HE, et al. (2006) Electrical measurement of the vanadium acceptor level in 4H- and 6H-SiC Materials Research Society Symposium Proceedings. 911: 225-230 |
| Zvanut ME, Lee W, Mitchel WC, et al. (2006) The acceptor level for vanadium in 4H and 6H SiC Physica B: Condensed Matter. 376: 346-349 |