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Ralph J. Jaccodine

Affiliations: 
Lehigh University, Bethlehem, PA, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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"Ralph Jaccodine"
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Hai-An Lin grad student 2000 Lehigh University

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Kilpatrick SJ, Jaccodine RJ. (2008) An angle-resolved study of early oxidation (<3.0 nm) of Si-Ge alloys Journal of Applied Physics. 103
Pierreux D, Stesmans A, Jaccodine RJ, et al. (2004) Electron spin resonance study of the effect of applied stress during thermal oxidation of (1 1 1)Si on inherent Pb interface defects Microelectronic Engineering. 72: 76-80
Kilpatrick SJ, Jaccodine RJ, Thompson PE. (2003) Experimental study of the oxidation of silicon germanium alloys Journal of Applied Physics. 93: 4896-4901
Jaccodine R. (2002) A Review of the Role of Excess si in SIO2 at the Growing Oxide Interface. Mrs Proceedings. 716
Lin HA, Jaccodine RJ, Freund MS. (2000) A reverse bias, tip-insulator-semiconductor tunnel diode model accounting for the delineation of a p/p+ junction using scanning tunneling microscopy Journal of Applied Physics. 87: 4476-4482
Lin HA, Jaccodine RJ, Freund MS. (1999) Observation of tip-induced gap states in lightly doped Si(100) using scanning tunneling spectroscopy Applied Physics Letters. 74: 1105-1107
Lin HA, Jaccodine RJ, Freund MS. (1998) Elimination of spectral shifts associated with tip-induced band bending in scanning tunneling spectroscopy of lightly doped silicon Applied Physics Letters. 73: 2462-2464
Lin HA, Jaccodine R, Freund MS. (1998) Doping-density dependence of scanning tunneling spectroscopy on lightly doped silicon Applied Physics Letters. 72: 1993-1995
Kilpatrick SJ, Jaccodine RJ, Thompson PE. (1997) A diffusional model for the oxidation behavior of Si1-xGex alloys Journal of Applied Physics. 81: 8018-8028
Huang JG, Jaccodine RJ, Young DR. (1994) Improvement of the SiO2/Si interface of metal-oxide- semiconductor devices using gate dielectrics formed by NF3-aided oxidation and N2O post-annealing Journal of Applied Physics. 75: 2564-2571
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