Amr Haggag, Ph.D.
Affiliations: | 2002 | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
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Electronics and Electrical EngineeringGoogle:
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| Schaeffer JK, Gilmer DC, Samavedam S, et al. (2007) On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics Journal of Applied Physics. 102 |
| Rauf S, Haggag A, Moosa M, et al. (2006) Computational modeling of process induced damage during plasma clean Journal of Applied Physics. 100: 23302 |
| Haggag A, Liu N, Menke D, et al. (2005) Physical model for the power-law voltage and current acceleration of TDDB Microelectronics Reliability. 45: 1855-1860 |
| McMahon W, Haggag A, Hess K. (2003) Reliability scaling issues for nanoscale devices Ieee Transactions On Nanotechnology. 2: 33-38 |
| Penzin O, Haggag A, McMahon W, et al. (2003) MOSFET degradation kinetics and its simulation Ieee Transactions On Electron Devices. 50: 1445-1450 |
| McMahon W, Haggag A, Hess K. (2002) A new paradigm for examining MOSFET failure modes Physica B-Condensed Matter. 314: 358-362 |
| Haggag A, McMahon W, Hess K, et al. (2001) Impact of scaling on CMOS chip failure rate, and design rules for hot carrier reliability Vlsi Design. 13: 111-115 |
| Hess K, Haggag A, McMahon W, et al. (2001) The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38 |
| Haggag A, Hess K. (2000) Analytical theory of semiconductor p-n junctions and the transition between depletion and quasineutral region Ieee Transactions On Electron Devices. 47: 1624-1629 |