Ian V. Mitchell

Affiliations: 
The University of Western Ontario (Canada) 
Area:
Condensed Matter Physics
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"Ian Mitchell"
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Publications

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Vos M, Mitchell IV. (2019) Anisotropic strain relaxation in the case of Au/Pd(110) interface formation. Physical Review. B, Condensed Matter. 45: 9398-9401
Lu ZH, Sham TK, Vos M, et al. (2019) Unoccupied d states of Au impurities in silicon as studied by x-ray-absorption spectroscopy. Physical Review. B, Condensed Matter. 45: 8811-8814
Zhang PX, Mitchell IV, Tong BY, et al. (2019) Depth-dependent disordering in a-Si produced by self-ion-implantation. Physical Review. B, Condensed Matter. 50: 17080-17084
Harmer SL, Goncharova LV, Kolarova R, et al. (2007) Surface structure of sphalerite studied by medium energy ion scattering and XPS Surface Science. 601: 352-361
Ruffell S, Mitchell IV, Simpson PJ. (2006) Solid phase epitaxial regrowth of amorphous layers in silicon created by low energy phosphorus implantation: A medium energy ion scattering study Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 591-594
Ruffell S, Mitchell IV, Simpson PJ. (2005) Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation Journal of Applied Physics. 98
Simpson TW, Mitchell IV. (2005) Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon Applied Physics Letters. 86: 1-3
Ruffell S, Simpson PJ, Mitchell IV. (2005) Electrical characterization of 5 keV phosphorous implants in silicon Journal of Applied Physics. 98
Ruffell S, Mitchell IV, Simpson PJ. (2005) Annealing behavior of low-energy ion-implanted phosphorus in silicon Journal of Applied Physics. 97
Piva PG, Mitchell IV, Chen H, et al. (2005) InGaAs/InP quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis Journal of Applied Physics. 97
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