Gilles Dennler, Ph.D.

Affiliations: 
2002 Ecole Polytechnique, Montreal (Canada) 
Area:
Fluid and Plasma Physics
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"Gilles Dennler"
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Y Segui grad student 2002 Ecole Polytechnique, Montreal (Canada)
 (PECVD de composes de silicium sur polymeres: Etude de la premiere phase du depot.)
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Publications

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Björketun M, Castelli IE, Rossmeisl J, et al. (2017) Defect Chemistry and Electrical Conductivity of Sm-Doped La1–xSrxCoO3−δ for Solid Oxide Fuel Cells Journal of Physical Chemistry C. 121: 15017-15027
Rey G, Larramona G, Bourdais S, et al. (2017) On the origin of band-tails in kesterite Solar Energy Materials and Solar Cells. 179: 142-151
Levcenko S, Just J, Redinger A, et al. (2016) Deep Defects in Cu2ZnSnðS;SeÞ4 Solar Cells with Varying Se Content Physical Review Applied. 5: 24004
Hempel H, Redinger A, Repins I, et al. (2016) Intragrain charge transport in kesterite thin films—Limits arising from carrier localization Journal of Applied Physics. 120: 175302
Bhattacharya S, Chmielowski R, Dennler G, et al. (2016) Novel ternary sulfide thermoelectric materials from high throughput transport and defect calculations Journal of Materials Chemistry. 4: 11086-11093
Bi Y, Felter K, Hoogland S, et al. (2016) Optical generation and transport of charges in iron pyrite nanocrystal films and subsequent injection into SnO2 Journal of Physical Chemistry C. 120: 22155-22162
Giraldo S, Thersleff T, Larramona G, et al. (2016) Cu2ZnSnSe4 solar cells with 10.6% efficiency through innovative absorber engineering with Ge superficial nanolayer Progress in Photovoltaics. 24: 1359-1367
Bourdais S, Choné C, Delatouche B, et al. (2016) Is the Cu/Zn Disorder the Main Culprit for the Voltage Deficit in Kesterite Solar Cells? Advanced Energy Materials. 6: 1502276
Bhattacharya S, Gunda NS, Stern R, et al. (2015) Achieving optimum carrier concentrations in p-doped SnS thermoelectrics. Physical Chemistry Chemical Physics : Pccp. 17: 9161-6
Chmielowski R, Péré D, Bera C, et al. (2015) Theoretical and experimental investigations of the thermoelectric properties of Bi2S3 Journal of Applied Physics. 117
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