Saurav Nigam, Ph.D.
Affiliations: | 2008 | Carnegie Mellon University, Pittsburgh, PA |
Area:
Materials Science Engineering, Chemical Engineering, Electronics and Electrical EngineeringGoogle:
"Saurav Nigam"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Marek Skowronski | grad student | 2008 | Carnegie Mellon | |
| (Carrier lifetimes in silicon carbide.) | ||||
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Publications
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| Chung HJ, Huh SW, Polyakov AY, et al. (2006) Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition Materials Science Forum. 527: 625-628 |
| Glaser ER, Shanabrook BV, Carlos WE, et al. (2006) Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Materials Science Forum. 613-616 |
| Garces NY, Carlos WE, Glaser ER, et al. (2006) Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Materials Science Forum. 547-550 |
| Huh SW, Polyakov AY, Chung HJ, et al. (2006) Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition Materials Science Forum. 527: 497-500 |
| Nigam S, Chung HJ, Huh SW, et al. (2006) Growth kinetics and polytype stability in halide chemical vapor deposition of SiC Materials Science Forum. 527: 27-30 |
| Polyakov AY, Fanton MA, Skowronski M, et al. (2006) Halide-CVD growth of bulk SiC crystals Materials Science Forum. 527: 21-26 |
| Huh SW, Chung HJ, Nigam S, et al. (2006) Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition Journal of Applied Physics. 99 |
| Chung HJ, Polyakov AY, Huh SW, et al. (2005) Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition Journal of Applied Physics. 97 |
| Nigam S, Chung HJ, Polyakov AY, et al. (2005) Growth kinetics study in halide chemical vapor deposition of SiC Journal of Crystal Growth. 284: 112-122 |
| Fanton M, Skowronski M, Snyder DW, et al. (2004) Growth of Bulk SiC by Halide Chemical Vapor Deposition Materials Science Forum. 87-90 |