Eitan Anzenberg, Ph.D.
Affiliations: | 2013 | Boston University, Boston, MA, United States |
Area:
Solid State Physics, Materials Science EngineeringGoogle:
"Eitan Anzenberg"Mean distance: (not calculated yet)
Parents
Sign in to add mentorKarl F. Ludwig | grad student | 2013 | Boston University | |
(Nanoscale surface structuring during ion bombardment of elemental semiconductors.) |
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Publications
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Norris SA, Perkinson JC, Mokhtarzadeh M, et al. (2017) Distinguishing physical mechanisms using GISAXS experiments and linear theory: the importance of high wavenumbers. Scientific Reports. 7: 2016 |
Perkinson JC, Anzenberg E, Aziz MJ, et al. (2014) Model-independent test of the truncated crater function theory of surface morphology evolution during ion bombardment Physical Review B - Condensed Matter and Materials Physics. 89 |
Krawicz A, Yang J, Anzenberg E, et al. (2013) Photofunctional construct that interfaces molecular cobalt-based catalysts for H2 production to a visible-light-absorbing semiconductor. Journal of the American Chemical Society. 135: 11861-8 |
Madi CS, Anzenberg E, Ludwig KF, et al. (2013) Erratum: Mass Redistribution Causes the Structural Richness of Ion-Irradiated Surfaces [Phys. Rev. Lett.106, 066101 (2011)] Physical Review Letters. 110 |
Arslan LC, Sanborn C, Anzenberg E, et al. (2012) Evidence for Family-Meakin dynamical scaling in island growth and coalescence during vapor phase deposition. Physical Review Letters. 109: 106102 |
Anzenberg E, Perkinson JC, Madi CS, et al. (2012) Nanoscale surface pattern formation kinetics on germanium irradiated by Kr+ ions Physical Review B - Condensed Matter and Materials Physics. 86 |
Madi CS, Anzenberg E, Ludwig KF, et al. (2011) Mass redistribution causes the structural richness of ion-irradiated surfaces. Physical Review Letters. 106: 066101 |
Anzenberg E, Madi CS, Aziz MJ, et al. (2011) Time-resolved measurements of nanoscale surface pattern formation kinetics in two dimensions on ion-irradiated Si Physical Review B - Condensed Matter and Materials Physics. 84 |