Sebastien Francoeur, Ph.D.
Affiliations: | 2004 | University of Colorado, Boulder, Boulder, CO, United States |
Area:
Condensed Matter Physics, Materials Science EngineeringGoogle:
"Sebastien Francoeur"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Angelo Mascarenhas | grad student | 2004 | CU Boulder | |
| (Gallium arsenic nitride and gallium arsenic bismuth novel optoelectronic alloys.) | ||||
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Publications
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| Wang J, Rousseau A, Yang M, et al. (2020) Mid-infrared polarized emission from black phosphorus light-emitting diodes. Nano Letters |
| Wang J, Rousseau A, Eizner E, et al. (2019) Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors Acs Photonics. 6: 3092-3099 |
| Favron A, Goudreault FA, Gosselin V, et al. (2018) Second-Order Raman Scattering in Exfoliated Black Phosphorus. Nano Letters |
| Bergeron A, Ibrahim J, Leonelli R, et al. (2017) Oxidation dynamics of ultrathin GaSe probed through Raman spectroscopy Applied Physics Letters. 110: 241901 |
| St-Jean P, Éthier-Majcher G, André R, et al. (2016) High-Fidelity and Ultrafast Initialization of a Hole Spin Bound to a Te Isoelectronic Center in ZnSe. Physical Review Letters. 117: 167401 |
| Favron A, Gaufrès E, Fossard F, et al. (2015) Photooxidation and quantum confinement effects in exfoliated black phosphorus. Nature Materials. 14: 826-32 |
| Mukherjee S, Givan U, Senz S, et al. (2015) Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters. 15: 3885-93 |
| St-Jean P, Éthier-Majcher G, Francoeur S. (2015) Dynamics of excitons bound to nitrogen isoelectronic centers in GaAs Physical Review B. 91 |
| St-Jean P, Éthier-Majcher G, Sakuma Y, et al. (2014) Recombination dynamics of excitons bound to nitrogen isoelectronic centers in δ-doped GaP Physical Review B. 89: 75308 |
| Ouellet-Plamondon C, Marcet S, Klem JF, et al. (2011) Excitonic fine structure of out-of-plane nitrogen dyads in GaAs Journal of Luminescence. 131: 2339-2341 |