Alison A. Baski

Affiliations: 
Virginia Commonwealth University, Richmond, VA, United States 
Area:
Condensed Matter Physics, Physical Chemistry
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"Alison Baski"
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Publications

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McNamara JD, Phumisithikul KL, Baski AA, et al. (2016) Surface photovoltage studies of p-type AlGaN layers after reactive-ion etching Journal of Applied Physics. 120: 155304
Ferguson JD, Reshchikov MA, Baski AA, et al. (2015) Determination of GaN polarity on periodically oriented surfaces Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 011206
McNamara JD, Foussekis M, Baski AA, et al. (2014) Low-temperature surface photovoltage in p- type GaN Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32
Mcnamara JD, Baski AA, Reshchikov MA. (2014) Temperature-dependent Kelvin probe studies on GaN from 80 to 600 K Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 726-729
Mcnamara JD, Foussekis MA, Baski AA, et al. (2013) Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 536-539
Ye D, Moussa S, Ferguson JD, et al. (2012) Highly efficient electron field emission from graphene oxide sheets supported by nickel nanotip arrays. Nano Letters. 12: 1265-8
McNamara JD, Ferguson JD, Foussekis M, et al. (2012) Surface characterization of Ga-doped ZnO layers Materials Research Society Symposium Proceedings. 1315: 77-82
McNamara JD, Foussekis M, Liu H, et al. (2012) Temperature dependent behavior of the SPV for n-type GaN Proceedings of Spie - the International Society For Optical Engineering. 8262
Foussekis M, Ferguson JD, McNamara JD, et al. (2012) Effects of polarity and surface treatment on Ga- and N-polar bulk GaN Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30
Foussekis M, McNamara JD, Baski AA, et al. (2012) Temperature-dependent Kelvin probe measurements of band bending in p-type GaN Applied Physics Letters. 101
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