Hongxi Liu
Affiliations: | Hokkaido University, Sapporo-shi, Hokkaidō, Japan |
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"Hongxi Liu"Mean distance: 13552
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Publications
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| Hu B, Moges K, Honda Y, et al. (2016) Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic C o2MnSi electrodes Physical Review B - Condensed Matter and Materials Physics. 94 |
| Moges K, Honda Y, Liu H, et al. (2016) Enhanced half-metallicity of off-stoichiometric quaternary Heusler alloy Co-2(Mn, Fe)Si investigated through saturation magnetization and tunneling magnetoresistance Physical Review B. 93 |
| Fetzer R, Liu HX, Stadtmüller B, et al. (2016) Impact of CoFe buffer layers on the structural and electronic properties of the Co |
| Fetzer R, Ouardi S, Honda Y, et al. (2015) Spin-resolved low-energy and hard x-ray photoelectron spectroscopy of off-stoichiometric Co |
| Liu H, Kawami T, Moges K, et al. (2015) Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions Journal of Physics D: Applied Physics. 48: 164001 |
| Li G, Honda Y, Liu H, et al. (2014) Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio Physical Review B. 89 |
| Ebina Y, Akiho T, Liu H, et al. (2014) Effect of CoFe insertion in Co2MnSi/CoFe/n-GaAs junctions on spin injection properties Applied Physics Letters. 104: 172405 |
| Akiho T, Shan J, Liu H, et al. (2013) Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source Physical Review B. 87: 235205 |
| Honda Y, Liu H, Matsuda K, et al. (2012) Temperature dependence of spin-dependent tunneling resistances of MgO-buffered Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions The Japan Society of Applied Physics |
| Liu H, Honda Y, Matsuda K, et al. (2012) Highly Spin-Polarized Tunneling in Epitaxial Magnetic Tunnel Junctions with a Co2MnSi Electrode and a MgO Barrier with Improved Interfacial Structural Properties Japanese Journal of Applied Physics. 51: 93004 |