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Liqun Han, Ph.D.

Affiliations: 
2001 Stanford University, Palo Alto, CA 
Area:
Electronics and Electrical Engineering
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"Liqun Han"
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R Fabian W. Pease grad student 2001 Stanford
 (Physical limitations to throughput of electron beam systems for next generation lithography.)

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Crane T, Campbell C, Pickard D, et al. (2002) Correcting for global space charge by positive ion generation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2709-2712
Takahashi K, Han L, Pease RF, et al. (2001) Stochastic Coulomb interaction effect in ion-neutralized electron-beam projection optics Journal of Vacuum Science & Technology B. 19: 2572-2580
Takahashi K, Han L, Pease RF, et al. (2001) Simulation of space charge neutralization using ions in electron beam projection optics Microelectronic Engineering. 57: 231-238
Han L, Pease RF, Meisburger WD, et al. (2000) Scaled measurements of global space-charge induced image blur in electron beam projection system Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2999-3003
Pease RF, Han L, Winograd GI, et al. (2000) Prospects for charged particle lithography as a manufacturing technology Microelectronic Engineering. 53: 55-60
Han L, Pease RFW, Meisburger WD, et al. (1999) Field size versus column shortness in high throughput electron beam lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 2830-2835
Han L, McCord MA, Winograd GI, et al. (1998) Performance investigation of Coulomb interaction-limited high throughput electron beam lithography based on empirical modeling Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3215-3220
Winograd GI, Han L, McCord MA, et al. (1998) Multiplexed blanker array for parallel electron beam lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 3174-3176
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