Chang Zeng, Ph.D.
Affiliations: | 2006 | North Carolina State University, Raleigh, NC |
Area:
Electronics and Electrical EngineeringGoogle:
"Chang Zeng"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Doug Barlage | grad student | 2006 | NCSU | |
| (Gallium nitride MOSFETs structures and process flows for logic applications.) | ||||
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Publications
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| Saripalli YN, Pei L, Biggerstaff T, et al. (2007) Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications Applied Physics Letters. 90: 204106 |
| Jin Y, Zeng C, Ma L, et al. (2007) Analytical threshold voltage model with TCAD simulation verification for design and evaluation of tri-gate MOSFETs Solid-State Electronics. 51: 347-353 |
| Ma L, Jin Y, Zeng C, et al. (2006) TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN based SOI MOSFETs Mrs Proceedings. 913 |
| Jin Y, Ma L, Zeng C, et al. (2006) Structure and Process Parameter Optimization for Sub-10nm Gate Length Fully Depleted N-Type SOI MOSFETs by TCAD Modeling and Simulation Mrs Proceedings. 913 |
| Wang D, Park M, Saripalli YN, et al. (2006) Optical spectroscopic analysis of selected area epitaxially regrown n + gallium nitride Journal of Applied Physics. 99 |
| Saripalli YN, Zeng C, Long JP, et al. (2006) Properties of III-N MOS structures with low-temperature epitaxially regrown ohmic contacts Journal of Crystal Growth. 287: 562-565 |
| Saripalli Y, Zeng C, Jin Y, et al. (2005) Low Temperature Selected Area Re-Growth of Ohmic Contacts for III-N FETs Mrs Proceedings. 892 |