Clifton G. Fonstad, PhD
Affiliations: | Electrical Engineering and Computer Science | Massachusetts Institute of Technology, Cambridge, MA, United States |
Area:
OptoelectronicsWebsite:
http://eecsfacweb.mit.edu/facpages/fonstad.htmlGoogle:
"Clifton Fonstad"Bio:
Fonstad, Clifton Gilbert, Stannic oxide crystal growth and electrical properties. Massachusetts Institute of Technology. Dept. of Electrical Engineering. Thesis. 1970. Ph.D.
Mean distance: 14.69 (cluster 17) | S | N | B | C | P |
Cross-listing: Neurotree
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Publications
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| Famenini S, Fonstad CG. (2012) Integration of edge-emitting laser diodes with dielectric waveguides on silicon Ieee Photonics Technology Letters. 24: 1849-1851 |
| Rumpler JJ, Fonstad CG. (2009) Continuous-wave electrically pumped 1.55-μm edge-emitting platelet ridge laser diodes on silicon Ieee Photonics Technology Letters. 21: 827-829 |
| Morales FM, García R, Molina SI, et al. (2009) Microstructural improvements of InP on GaAs (001) grown by molecular beam epitaxy by in situ hydrogenation and postgrowth annealing Applied Physics Letters. 94 |
| Perkins JM, Simpkins TL, Warde C, et al. (2008) Full recess integration of small diameter low threshold VCSELs within Si-CMOS ICs. Optics Express. 16: 13955-60 |
| Liu J, Michel J, Cannon DD, et al. (2005) High speed Ge photodetectors on Si platform for GHz optical communications in C+L bands Materials Research Society Symposium Proceedings. 829: 285-289 |
| Choy HKH, Fonstad CG. (2005) Effects of substrate temperature on the growth of InGaAs compositionally graded buffers and on quantum well structures grown above them Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2109-2113 |
| Giziewicz WP, Fonstad CG, Prasad S. (2004) High speed 0.9 μm lateral p-i-n photodetectors fabricated in a standard commercial GaAs VLSI process International Journal of High Speed Electronics and Systems. 14: 714-719 |
| Giziewicz WP, Fonstad CG. (2002) Optoelectronic integration using aligned metal-to-semiconductor bonding Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 1052-1056 |
| Loke WK, Yoon SF, Zheng HQ, et al. (2002) Epitaxial growth of high quality AlGaAs/GaAs structures on atomically flat GaAs surfaces in deep dielectric windows cleaned using atomic hydrogen Thin Solid Films. 402: 43-48 |
| Pan JL, Fonstad CG. (2000) Theory, fabrication and characterization of quantum well infrared photodetectors Materials Science and Engineering R: Reports. 28: 65-147 |