Rubi Gul, Ph.D.
Affiliations: | 2009 | Idaho State University, Pocatello, ID, United States |
Area:
Materials Science Engineering, Radiation PhysicsGoogle:
"Rubi Gul"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Kara Keeter | grad student | 2009 | Idaho State University | |
| (Point defect characterization in room-temperature radiation detectors (cadmium zinc telluride, cadmium manganese telluride, thallium bromide) and semiconductor materials useful as photovoltaic devices.) | ||||
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Publications
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| Roy UN, Camarda GS, Cui Y, et al. (2019) Evaluation of CdZnTeSe as a high-quality gamma-ray spectroscopic material with better compositional homogeneity and reduced defects. Scientific Reports. 9: 7303 |
| Roy UN, Camarda GS, Cui Y, et al. (2019) Role of selenium addition to CdZnTe matrix for room-temperature radiation detector applications. Scientific Reports. 9: 1620 |
| Adams AL, Egarievwe SU, Agbalagba EO, et al. (2019) Study of Chemical Etching and Chemo-Mechanical Polishing on CdZnTe Nuclear Detectors Journal of Materials Science and Chemical Engineering. 7: 33-41 |
| Roy UN, Camarda GS, Cui Y, et al. (2019) Growth of CdMnTe free of large Te inclusions using the vertical Bridgman technique Journal of Crystal Growth. 509: 35-39 |
| Roy UN, Camarda GS, Cui Y, et al. (2018) Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method Aip Advances. 8: 125015 |
| Roy UN, Okobiah OK, Camarda GS, et al. (2018) Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique Aip Advances. 8: 105012 |
| Giraldo LAO, Bolotnikov AE, Camarda GS, et al. (2017) Achieving subpixel resolution with time-correlated transient signals in pixelated CdZnTe gamma-ray sensors using a focused laser beam (Conference Presentation) Proceedings of Spie. 10229: 1022907 |
| Roy UN, Camarda GS, Cui Y, et al. (2017) Assessment of a new ZnO:Al contact to CdZnTe for X- and gamma-ray detector applications Aip Advances. 7: 95216 |
| Gul R, Roy UN, Camarda GS, et al. (2017) A comparison of point defects in Cd1−xZnxTe1−ySeycrystals grown by Bridgman and traveling heater methods Journal of Applied Physics. 121: 125705 |
| Gul R, Roy UN, James RB. (2017) An analysis of point defects induced by In, Al, Ni, and Sn dopants in Bridgman-grown CdZnTe detectors and their influence on trapping of charge carriers Journal of Applied Physics. 121: 115701 |