Enrico Bellotti
Affiliations: | Boston University, Boston, MA, United States |
Area:
Electronics and Electrical Engineering, Theory Physics, Materials Science EngineeringGoogle:
"Enrico Bellotti"Mean distance: (not calculated yet)
Children
Sign in to add traineeDanilo D'Orsogna | grad student | 2010 | Boston University |
Michele Moresco | grad student | 2011 | Boston University |
Nuno S. Almeida | grad student | 2012 | Boston University |
Craig A. Keasler | grad student | 2012 | Boston University |
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Publications
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Kyrtsos A, Matsubara M, Bellotti E. (2020) Band offsets of AlxGa1-xN alloys using first-principles calculations. Journal of Physics. Condensed Matter : An Institute of Physics Journal |
Tibaldi A, Montoya JAG, Alasio MGC, et al. (2020) Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach Physical Review Applied. 14 |
Bertazzi F, Tibaldi A, Goano M, et al. (2020) Nonequilibrium Green’s Function Modeling of type-II Superlattice Detectors and its Connection to Semiclassical Approaches Physical Review Applied. 14 |
Glasmann A, Prigozhin I, Bellotti E. (2019) Understanding the $C-V$ Characteristics of InAsSb-Based nBn Infrared Detectors With N- and P-Type Barrier Layers Through Numerical Modeling Ieee Journal of the Electron Devices Society. 7: 534-543 |
Appleton B, Hubbard T, Glasmann A, et al. (2018) Parametric numerical study of the modulation transfer function in small-pitch InGaAs/InP infrared arrays with refractive microlenses. Optics Express. 26: 5310-5326 |
Glasmann A, Hubbard T, Bellotti E. (2017) Numerical modeling of a dark current suppression mechanism in IR detector arrays Proceedings of Spie. 10177 |
Bellotti E, Wen H, Dominici S, et al. (2017) A comparative study of carrier lifetimes in ESWIR and MWIR materials: HgCdTe, InGaAs, InAsSb, and GeSn (Conference Presentation) Proceedings of Spie. 10177 |
Kraczek B, Shishehchi S, Bellotti E. (2017) Towards noise-aware surrogate models of carrier population dynamics in optically excited GaN Proceedings of Spie. 10206 |
Kyrtsos A, Matsubara M, Bellotti E. (2017) Migration mechanisms and diffusion barriers of vacancies in Ga 2 O 3 Physical Review B. 95: 245202 |
Dominici S, Wen H, Bertazzi F, et al. (2016) Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications. Optics Express. 24: 26363-26381 |