John Stewart Preston
Affiliations: | Engineering Physics | McMaster University, Hamilton, ON, Canada | |
1987 | University of Toronto, Toronto, ON, Canada |
Area:
materials scienceWebsite:
http://engphys.mcmaster.ca/faculty/dr-john-preston/Google:
"John Preston"Bio:
https://books.google.com/books?id=C4svAQAAIAAJ
http://adsabs.harvard.edu/abs/1987PhDT........84P
Mean distance: (not calculated yet)
Cross-listing: Materials Tree
Parents
Sign in to add mentorHenry M. van Driel | grad student | 1987 | University of Toronto | |
(Nonequilibrium Pattern Formation in Silicon during CW Laser Induced Melting.) |
Children
Sign in to add traineeFrank Anthony Hegmann | grad student | 1995 | McMaster University |
Gabriel Allan Devenyi | grad student | 2007-2014 | McMaster University (Neurotree) |
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Publications
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El-Sherif H, Jovanovic S, Preston J, et al. (2020) Electron Microscopy and Interface Plasmons Characterization of Cadmium Telluride Thin Film Grown Incommensurately with Weak Bonding on Sapphire Microscopy and Microanalysis. 1-3 |
Meinander K, Preston JS. (2015) A DFT study on the effect of surface termination in CdTe (111)/α-Al2O3 (0001) heteroepitaxy Surface Science. 632: 93-97 |
Meinander K, Carvalho JL, Miki C, et al. (2014) Purified water etching of native oxides on heteroepitaxial CdTe thin films Journal of Physics D: Applied Physics. 47 |
Zhu GZ, Majdi T, Shao Y, et al. (2014) Atomic structure and bonding of the interfacial bilayer between Au nanoparticles and epitaxially regrown MgAl2O4 substrates Applied Physics Letters. 105 |
Jovanovic SM, Devenyi GA, Jarvis VM, et al. (2014) Optical characterization of epitaxial single crystal CdTe thin films on Al |
Vajargah SH, Ghanad-Tavakoli S, Preston JS, et al. (2013) Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer Journal of Applied Physics. 114: 113101 |
Woo SY, Devenyi GA, Ghanad-Tavakoli S, et al. (2013) Tilted epitaxy on (211)-oriented substrates Applied Physics Letters. 102: 132103 |
Vajargah SH, Ghanad-Tavakoli S, Preston JS, et al. (2012) Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy Journal of Applied Physics. 112: 93103 |
Vajargah SH, Woo SY, Ghanad-Tavakoli S, et al. (2012) Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy Journal of Applied Physics. 112: 93101 |
Devenyi GA, Woo SY, Ghanad-Tavakoli S, et al. (2011) The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films Journal of Applied Physics. 110 |