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John Stewart Preston

Affiliations: 
Engineering Physics McMaster University, Hamilton, ON, Canada 
 1987 University of Toronto, Toronto, ON, Canada 
Area:
materials science
Website:
http://engphys.mcmaster.ca/faculty/dr-john-preston/
Google:
"John Preston"
Bio:

https://books.google.com/books?id=C4svAQAAIAAJ
http://adsabs.harvard.edu/abs/1987PhDT........84P

Mean distance: (not calculated yet)
 
Cross-listing: Materials Tree

Parents

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Henry M. van Driel grad student 1987 University of Toronto
 (Nonequilibrium Pattern Formation in Silicon during CW Laser Induced Melting.)
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Publications

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El-Sherif H, Jovanovic S, Preston J, et al. (2020) Electron Microscopy and Interface Plasmons Characterization of Cadmium Telluride Thin Film Grown Incommensurately with Weak Bonding on Sapphire Microscopy and Microanalysis. 1-3
Meinander K, Preston JS. (2015) A DFT study on the effect of surface termination in CdTe (111)/α-Al2O3 (0001) heteroepitaxy Surface Science. 632: 93-97
Meinander K, Carvalho JL, Miki C, et al. (2014) Purified water etching of native oxides on heteroepitaxial CdTe thin films Journal of Physics D: Applied Physics. 47
Zhu GZ, Majdi T, Shao Y, et al. (2014) Atomic structure and bonding of the interfacial bilayer between Au nanoparticles and epitaxially regrown MgAl2O4 substrates Applied Physics Letters. 105
Jovanovic SM, Devenyi GA, Jarvis VM, et al. (2014) Optical characterization of epitaxial single crystal CdTe thin films on Al2O3 (0001) substrates Thin Solid Films. 155-158
Vajargah SH, Ghanad-Tavakoli S, Preston JS, et al. (2013) Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer Journal of Applied Physics. 114: 113101
Woo SY, Devenyi GA, Ghanad-Tavakoli S, et al. (2013) Tilted epitaxy on (211)-oriented substrates Applied Physics Letters. 102: 132103
Vajargah SH, Ghanad-Tavakoli S, Preston JS, et al. (2012) Lattice-registered growth of GaSb on Si (211) with molecular beam epitaxy Journal of Applied Physics. 112: 93103
Vajargah SH, Woo SY, Ghanad-Tavakoli S, et al. (2012) Atomic-resolution study of polarity reversal in GaSb grown on Si by scanning transmission electron microscopy Journal of Applied Physics. 112: 93101
Devenyi GA, Woo SY, Ghanad-Tavakoli S, et al. (2011) The role of vicinal silicon surfaces in the formation of epitaxial twins during the growth of III-V thin films Journal of Applied Physics. 110
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