Christiane Poblenz, Ph.D.
Affiliations: | 2005 | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science EngineeringGoogle:
"Christiane Poblenz"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| James Stephen Speck | grad student | 2005 | UC Santa Barbara | |
| (Growth of (indium,aluminum)gallium nitride alloys by RF-plasma assisted molecular beam epitaxy for application in high electron mobility transistor structures.) | ||||
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Publications
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| Melo T, Hu YL, Weisbuch C, et al. (2012) Gain comparison in polar and nonpolar/semipolar gallium-nitride-based laser diodes Semiconductor Science and Technology. 27 |
| Cardwell DW, Arehart AR, Poblenz C, et al. (2012) Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100 |
| Schmidt MC, Poblenz C, Chang YC, et al. (2011) High performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates Proceedings of Spie - the International Society For Optical Engineering. 8039 |
| Raring JW, Schmidt MC, Poblenz C, et al. (2011) Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates Ieee Photonic Society 24th Annual Meeting, Pho 2011. 503-504 |
| Roy T, Zhang EX, Puzyrev YS, et al. (2011) Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99 |
| Arehart AR, Malonis AC, Poblenz C, et al. (2011) Next generation defect characterization in nitride HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2242-2244 |
| Raring JW, Schmidt MC, Poblenz C, et al. (2010) High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates Applied Physics Express. 3 |
| Raring JW, Hall EM, Schmidt MC, et al. (2010) State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes Proceedings of Spie - the International Society For Optical Engineering. 7686 |
| Yang CK, Roblin P, Groote FD, et al. (2010) Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer Ieee Transactions On Microwave Theory and Techniques. 58: 1077-1088 |
| Arehart AR, Homan T, Wong MH, et al. (2010) Impact of N- and Ga-face polarity on the incorporation of deep levels in n -type GaN grown by molecular beam epitaxy Applied Physics Letters. 96 |