Andrea Corrion, Ph.D.
Affiliations: | 2008 | Materials | University of California, Santa Barbara, Santa Barbara, CA, United States |
Area:
Materials Science EngineeringGoogle:
"Andrea Corrion"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| James Stephen Speck | grad student | 2008 | UC Santa Barbara | |
| (Ammonia molecular beam epitaxy of (aluminum,gallium) nitride for aluminum gallium nitride/gallium nitride high electron mobility transistors.) | ||||
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Publications
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| Moon J, Wong J, Grabar B, et al. (2020) 360 GHz f MAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications Ieee Electron Device Letters. 41: 1173-1176 |
| Moon JS, Grabar R, Wong J, et al. (2020) High-speed graded-channel AlGaN/GaN HEMTs with power added efficiency >70% at 30 GHz Electronics Letters. 56: 678-680 |
| Wong JC, Micovic M, Brown DF, et al. (2018) Selective anisotropic etching of GaN over AlGaN for very thin films Journal of Vacuum Science and Technology. 36: 30603 |
| Tang Y, Shinohara K, Regan D, et al. (2015) Ultrahigh-speed GaN high-electron-mobility transistors with f |
| Chu R, Corrion A, Chen M, et al. (2011) 1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance Ieee Electron Device Letters. 32: 632-634 |
| Arehart AR, Corrion A, Poblenz C, et al. (2008) Deep level optical and thermal spectroscopy of traps in n -GaN grown by ammonia molecular beam epitaxy Applied Physics Letters. 93 |
| Armstrong A, Caudill J, Corrion A, et al. (2008) Characterization of majority and minority carrier deep levels in p -type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy Journal of Applied Physics. 103 |
| Shen L, Palacios T, Poblenz C, et al. (2006) Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment Ieee Electron Device Letters. 27: 214-216 |
| Recht F, McCarthy L, Rajan S, et al. (2006) Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature Ieee Electron Device Letters. 27: 205-207 |
| Corrion A, Poblenz C, Waltereit P, et al. (2006) Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy Ieice Transactions On Electronics. 89: 906-912 |