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Benjamin N. Bryant, Ph.D.

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
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James Stephen Speck grad student 2013 UC Santa Barbara
 (m-Plane Homoepitaxy and Equilibrium Crystal Shapes of Gallium Nitride by Hydride Vapor Phase Epitaxy.)

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Bryant BN, Young EC, Wu F, et al. (2013) Basal plane stacking fault suppression by nitrogen carrier gas in m-plane GaN regrowth by hydride vapor phase epitaxy Applied Physics Express. 6
Bryant BN, Kamber DS, Wu F, et al. (2011) Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1463-1466
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