Michael J. Murphy
Affiliations: | 2000 | Cornell University, Ithaca, NY, United States |
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Parents
Sign in to add mentor| Lester F. Eastman | grad student | 2000 | Cornell | |
| (Design, growth, and characterization of alluminum gallium nitride/gallium nitride high-electron-mobility transistors.) | ||||
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Publications
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| Brillson LJ, Bradley ST, Goss SH, et al. (2002) Low-energy electron-excited nanoluminescence studies of GaN and related materials Applied Surface Science. 190: 498-507 |
| Waldron EL, Schubert EF, Graff JW, et al. (2001) Polarization effects in AlxGa1-xN/GaN superlattices Materials Research Society Symposium - Proceedings. 639: G11.1.1-G11.1.6 |
| Eastman LF, Tilak V, Smart J, et al. (2001) Undoped AlGaN/GaN HEMTs for microwave power amplification Ieee Transactions On Electron Devices. 48: 479-485 |
| Bradley ST, Young AP, Brillson LJ, et al. (2001) Influence of AlGaN deep level defects on AlGaN/GaN 2-DEG carrier confinement Ieee Transactions On Electron Devices. 48: 412-415 |
| Brillson LJ, Young AP, Jessen GH, et al. (2001) Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces Applied Surface Science. 175: 442-449 |
| Bradley ST, Young AP, Brillson LJ, et al. (2001) Role of barrier and buffer layer defect states in AlGaN/GaN HEMT structures Journal of Electronic Materials. 30: 123-128 |
| Eustis TJ, Silcox J, Murphy MJ, et al. (2000) Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194 |
| Tilak V, Dimitrov R, Murphy M, et al. (2000) Electric and morphology studies of ohmic contacts on AlGaN/GaN Materials Research Society Symposium - Proceedings. 622: T741-T746 |
| Ambacher O, Link A, Hackenbuchner S, et al. (2000) 2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 622: T5101-T5106 |
| Dimitrov R, Tilak V, Murphy M, et al. (2000) Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers Materials Research Society Symposium - Proceedings. 622: T461-T466 |