Dominik Metzler
Affiliations: | 2016 | University of Maryland, College Park, College Park, MD |
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| Pranda A, Lin K, Engelmann S, et al. (2020) Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist Journal of Vacuum Science and Technology. 38: 52601 |
| Lin K, Li C, Engelmann S, et al. (2020) Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition Journal of Vacuum Science & Technology A. 38: 032601 |
| Lin K, Li C, Engelmann S, et al. (2018) Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors Journal of Vacuum Science & Technology A. 36: 040601 |
| Metzler D, Li C, Engelmann S, et al. (2017) Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma. The Journal of Chemical Physics. 146: 052801 |
| Metzler D, Li C, Lai CS, et al. (2017) Investigation of thin oxide layer removal from Si substrates using an SiO2atomic layer etching approach: the importance of the reactivity of the substrate Journal of Physics D: Applied Physics. 50: 254006 |
| Metzler D, Li C, Engelmann S, et al. (2017) Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C |
| Kawakami M, Metzler D, Li C, et al. (2016) Effect of the chamber wall on fluorocarbon-assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma. Journal of Vacuum Science & Technology. a, Vacuum, Surfaces, and Films : An Official Journal of the American Vacuum Society. 34: 040603 |
| Li C, Metzler D, Lai CS, et al. (2016) Fluorocarbon based atomic layer etching of Si3N4 and etching selectivity of SiO2 over Si3N4 Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 041307 |
| Metzler D, Weilnboeck F, Engelmann S, et al. (2016) He plasma pretreatment of organic masking materials for performance improvement during pattern transfer by plasma etching Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34 |
| Metzler D, Li C, Engelmann S, et al. (2016) Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34 |