☰

Jonathan J. Wierer, Ph.D.

Affiliations: 
1995-1999 Electrical and Computer Engineering University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
 1999-2000 Hewlett Packard 
 2000-2008 Lumileds Lighting 
 2008-2015 Semiconductor Materials and Device Sciences Sandia National Laboratories 
 2015-2021 Electrical and Computer Engineering Lehigh University, Bethlehem, PA, United States 
 2021- Electrical and Computer Engineering North Carolina State University, Raleigh, NC 
Area:
semiconductors, photonics, electronic devices, LEDs, Lasers
Website:
jwierer.com
Google:
"Jonathan J. Wierer, Jr."
Mean distance: (not calculated yet)
 
Tree Publications Similar researchers PubMed Report error

Parents

Sign in to add mentor
Nick Holonyak grad student 1995-1999 UIUC

Children

Sign in to add trainee
Matt Peart grad student Lehigh University
Xiongliang Wei grad student Lehigh University
Syed Ahmed Al Muyeed grad student 2016-2021 Lehigh University

Collaborators

Sign in to add collaborator
BETA: Related publications

Publications

You can help our author matching system! If you notice any publications incorrectly attributed to this author, please sign in and mark matches as correct or incorrect.

Wei X, Al Muyeed SA, Xue H, et al. (2023) Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots. Materials (Basel, Switzerland). 16
Peart MR, Wierer JJ. (2020) Edge Termination for III-Nitride Vertical Power Devices Using Polarization Engineering Ieee Transactions On Electron Devices. 67: 571-575
Borovac D, Sun W, Peart MR, et al. (2020) Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847
Al Muyeed SA, Wei X, Borovac D, et al. (2020) Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates Journal of Crystal Growth. 540: 125652
Goodrich JC, Farinha TG, Ju L, et al. (2020) Surface pretreatment and deposition temperature dependence of MgO epitaxy on GaN by thermal atomic layer deposition Journal of Crystal Growth. 536: 125568
Borovac D, Sun W, Song R, et al. (2020) On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469
Al Muyeed SA, Sun W, Peart MR, et al. (2019) Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106
Sun W, Tan CK, Wierer JJ, et al. (2018) Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109
Peart MR, Tansu N, Wierer JJ. (2018) AlInN for Vertical Power Electronic Devices Ieee Transactions On Electron Devices. 65: 4276-4281
Wei X, Al Muyeed SA, Peart MR, et al. (2018) Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106
See more...