Sara Fathipour
Affiliations: | 2017 | Electrical Engineering | University of Notre Dame, Notre Dame, IN, United States |
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| Fathipour S, Paletti P, Fullerton-Shirey SK, et al. (2020) Electric-double-layer p-i-n junctions in WSe. Scientific Reports. 10: 12890 |
| Liu M, Wei S, Shahi S, et al. (2020) Enhanced carrier transport by transition metal doping in WS field effect transistors. Nanoscale |
| Paletti P, Fathipour S, Remškar M, et al. (2020) Quantitative, experimentally-validated, model of MoS2 nanoribbon Schottky field-effect transistors from subthreshold to saturation Journal of Applied Physics. 127: 65705 |
| Kazanov DR, Poshakinskiy AV, Davydov VY, et al. (2018) Multiwall MoS2 tubes as optical resonators Applied Physics Letters. 113: 101106 |
| Alessandri C, Fathipour S, Li H, et al. (2017) Reconfigurable Electric Double Layer Doping in an MoS2Nanoribbon Transistor Ieee Transactions On Electron Devices. 64: 5217-5222 |
| Müller MR, Salazar R, Fathipour S, et al. (2016) Gate-Controlled WSe2 Transistors Using a Buried Triple-Gate Structure. Nanoscale Research Letters. 11: 512 |
| Park JH, Fathipour S, Kwak I, et al. (2016) Atomic Layer Deposition of Al2O3 on WSe2 Functionalized by Titanyl Phthalocyanine. Acs Nano |
| Seabaugh A, Fathipour S, Li W, et al. (2016) Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels Technical Digest - International Electron Devices Meeting, Iedm. 2016: 35.6.1-35.6.4 |
| Fathipour S, Pandey P, Fullerton-Shirey S, et al. (2016) Electric-double-layer doping of WSe2 field-effect transistors using polyethylene-oxide cesium perchlorate Journal of Applied Physics. 120: 234902 |
| Yan R, Fathipour S, Han Y, et al. (2015) Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment. Nano Letters |