Dong Han
Affiliations: | Northeastern University, China |
Area:
First-Principles Calculation, Wide-Band-Gap Semiconductor, 2D Semiconductor, Oxide SemiconductorGoogle:
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Publications
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| Chen NK, Li XB, Bang J, et al. (2018) Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701 |
| Chen NK, Han D, Li XB, et al. (2017) Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp |
| Cheng S, Lu J, Han D, et al. (2016) Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films. Scientific Reports. 6: 37496 |
| Ma C, Han D, Liu M, et al. (2016) Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3. Scientific Reports. 6: 37337 |
| Han D, Bang J, Xie W, et al. (2016) Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters |