Leo J. Schowalter, Ph.D
Affiliations: | 1976-1981 | Physics | University of Illinois, Urbana-Champaign, Urbana-Champaign, IL |
| 1987-2005 | Physics | Rensselaer Polytechnic Institute, Troy, NY, United States |
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"Leo Schowalter"Mean distance: 13.92 | S | N | B | C | P |
Children
Sign in to add trainee| Vincent P. LaBella | grad student | 1993-1998 | RPI |
| Yuriy V. Shusterman | grad student | 2001 | RPI |
| Sujit K. Biswas | grad student | 2004 | RPI |
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Publications
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| Lee K, Cho Y, Schowalter LJ, et al. (2020) Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates Applied Physics Letters. 116: 262102 |
| Cho Y, Chang CS, Lee K, et al. (2020) Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning Applied Physics Letters. 116: 172106 |
| Moe CG, Sugiyama S, Kasai J, et al. (2018) AlGaN Light‐Emitting Diodes on AlN Substrates Emitting at 230 nm Physica Status Solidi (a). 215: 1700660 |
| Gibb SR, Grandusky JR, Mendrick M, et al. (2011) Performance of pseudomorphic ultraviolet LEDs grown on bulk aluminum nitride substrates International Journal of High Speed Electronics and Systems. 20: 497-504 |
| Grandusky JR, Gibb SR, Mendrick M, et al. (2011) Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 1528-1533 |
| Grandusky JR, Gibb SR, Mendrick MC, et al. (2010) Properties of mid-ultraviolet light emitting diodes fabricated from pseudomorphic layers on bulk aluminum nitride substrates Applied Physics Express. 3 |
| Garrett GA, Sampath AV, Shen H, et al. (2010) Evaluation of AlGaN-based deep ultraviolet emitter active regions by temperature dependent time-resolved photoluminescence Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2390-2393 |
| Grandusky J, Cui Y, Gibb S, et al. (2010) Performance and reliability of ultraviolet-C pseudomorphic light emitting diodes on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2199-2201 |
| Grandusky JR, Smart JA, Mendrick MC, et al. (2009) Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Journal of Crystal Growth. 311: 2864-2866 |
| Mueller SG, Bondokov RT, Morgan KE, et al. (2009) The progress of AlN bulk growth and epitaxy for electronic applications Physica Status Solidi (a) Applications and Materials Science. 206: 1153-1159 |