| Year |
Citation |
Score |
| 2020 |
Santos SS, Marcondes ML, Justo JF, Assali LV. Calcium carbonate at high pressures and high temperatures: A first-principles investigation Physics of the Earth and Planetary Interiors. 299: 106327. DOI: 10.1016/J.Pepi.2019.106327 |
0.312 |
|
| 2015 |
De Oliveira AM, Perotoni MB, Kofuji ST, Justo JF. A palm tree Antipodal Vivaldi Antenna with exponential slot edge for improved radiation pattern Ieee Antennas and Wireless Propagation Letters. 14: 1334-1337. DOI: 10.1109/Lawp.2015.2404875 |
0.645 |
|
| 2015 |
Machado WVM, Justo JF, Assali LVC. Iron and manganese-related magnetic centers in hexagonal silicon carbide: A possible roadmap for spintronic devices Journal of Applied Physics. 118. DOI: 10.1063/1.4927293 |
0.36 |
|
| 2015 |
Justo JF, Morra G, Yuen DA. Viscosity undulations in the lower mantle: The dynamical role of iron spin transition Earth and Planetary Science Letters. 421: 20-26. DOI: 10.1016/J.Epsl.2015.03.013 |
0.328 |
|
| 2014 |
Garcia JC, Justo JF. Twisted ultrathin silicon nanowires: A possible torsion electromechanical nanodevice Epl. 108. DOI: 10.1209/0295-5075/108/36006 |
0.363 |
|
| 2013 |
de Oliveira AM, Garay JRB, Justo JF, Kofuji ST. A complete ultra wide band transmitter system for impulse radar Recent Patents On Engineering. 7: 133-139. DOI: 10.2174/1872212111307020006 |
0.655 |
|
| 2013 |
De Oliveira AM, Ascama HDO, Hiramatsu RK, Kofuji ST, Perotoni MB, Justo JF. A CMOS UWB transmitter with vivaldi array for ultra-fast beam steering microwave radar Journal of Microwaves, Optoelectronics and Electromagnetic Applications. 12: 427-439. DOI: 10.1590/S2179-10742013000200014 |
0.65 |
|
| 2013 |
De Oliveira AM, Perotoni MB, Garay JRB, Barboza SHI, Justo JF, Kofuji ST. A complete CMOS UWB Timed-Array Transmitter with a 3D vivaldi antenna array for electronic high-resolution beam spatial scanning Sbmo/Ieee Mtt-S International Microwave and Optoelectronics Conference Proceedings. DOI: 10.1109/IMOC.2013.6646408 |
0.641 |
|
| 2013 |
Caroena G, MacHado WVM, Justo JF, Assali LVC. Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices Applied Physics Letters. 102. DOI: 10.1063/1.4791787 |
0.336 |
|
| 2012 |
Garcia JC, Assali LVC, Justo JF. The structural and electronic properties of tin oxide nanowires: An ab initio investigation Journal of Physical Chemistry C. 116: 13382-13387. DOI: 10.1021/Jp300793E |
0.338 |
|
| 2012 |
Caroena G, Justo JF, MacHado WVM, Assali LVC. Rare-earth impurities in gallium nitride: The role of the Hubbard potential Diamond and Related Materials. 27: 64-67. DOI: 10.1016/J.Diamond.2012.06.001 |
0.356 |
|
| 2011 |
Assali LVC, MacHado WVM, Justo JF. 3d transition metal impurities in diamond: Electronic properties and chemical trends Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155205 |
0.336 |
|
| 2011 |
Garcia JC, MacHado WVM, Assali LVC, Justo JF. Transition metal atoms encapsulated in adamantane molecules Diamond and Related Materials. 20: 1222-1224. DOI: 10.1016/J.Diamond.2011.07.001 |
0.326 |
|
| 2010 |
Garcia JC, Assali LV, Machado WV, Justo JF. Crystal engineering using functionalized adamantane. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 315303. PMID 21399359 DOI: 10.1088/0953-8984/22/31/315303 |
0.321 |
|
| 2010 |
Garcia JC, Justo JF, MacHado WVM, Assali LVC. Boron and nitrogen functionalized diamondoids: A first principles investigation Diamond and Related Materials. 19: 837-840. DOI: 10.1016/J.Diamond.2010.02.007 |
0.317 |
|
| 2009 |
Garcia JC, Justo JF, MacHado WVM, Assali LVC. Functionalized adamantane: Building blocks for nanostructure self-assembly Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125421 |
0.32 |
|
| 2009 |
Larico R, Justo JF, Machado WVM, Assali LVC. Electronic properties and hyperfine fields of nickel-related complexes in diamond Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115202 |
0.368 |
|
| 2009 |
Assali LVC, Machado WVM, Justo JF. Trends on 3d transition metal impurities in diamond Physica B: Condensed Matter. 404: 4515-4517. DOI: 10.1016/J.Physb.2009.08.109 |
0.333 |
|
| 2008 |
Carrier P, Justo JF, Wentzcovitch RM. Quasiharmonic elastic constants corrected for deviatoric thermal stresses Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.144302 |
0.308 |
|
| 2008 |
Larico R, Assali LVC, MacHado WVM, Justo JF. Cobalt-related impurity centers in diamond: Electronic properties and hyperfine parameters Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/41/415220 |
0.359 |
|
| 2007 |
Justo JF, Menezes RD, Assali LVC. Stability and plasticity of silicon nanowires: The role of wire perimeter Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045303 |
0.349 |
|
| 2007 |
De Araújo MM, Justo JF, Nunes RW. Interaction of dislocations with vacancies in silicon: Electronic effects Applied Physics Letters. 90. DOI: 10.1063/1.2743909 |
0.4 |
|
| 2007 |
Justo JF, Machado WVM, Assali LVC. Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors Diamond and Related Materials. 16: 1429-1432. DOI: 10.1016/J.Diamond.2006.10.005 |
0.316 |
|
| 2007 |
Assali LVC, Machado WVM, Larico R, Justo JF. Cobalt in diamond: An ab initio investigation Diamond and Related Materials. 16: 819-822. DOI: 10.1016/J.Diamond.2006.09.014 |
0.35 |
|
| 2007 |
Menezes RD, Justo JF, Assali LVC. Energetics of silicon nanowires: A molecular dynamics investigation Physica Status Solidi (a) Applications and Materials Science. 204: 951-955. DOI: 10.1002/Pssa.200675204 |
0.35 |
|
| 2006 |
Larico R, Machado WVM, Justo JF, Assali LVC. Microscopic structure of nickel-dopant centers in diamond Brazilian Journal of Physics. 36: 267-269. DOI: 10.1590/S0103-97332006000300009 |
0.361 |
|
| 2006 |
Spence JCH, Kolar HR, Hembree G, Humphreys CJ, Barnard J, Datta R, Koch C, Ross FM, Justo JF. Imaging dislocation cores - The way forward Philosophical Magazine. 86: 4781-4796. DOI: 10.1080/14786430600776322 |
0.328 |
|
| 2006 |
Assali LVC, Machado WVM, Justo JF. Manganese impurities in boron nitride Applied Physics Letters. 89. DOI: 10.1063/1.2266930 |
0.317 |
|
| 2006 |
Ayres F, Assali LVC, MacHado WVM, Justo JF. Role of intrinsic defects in the electronic and optical properties of α-HgI2 Applied Physics Letters. 88. DOI: 10.1063/1.2159573 |
0.397 |
|
| 2006 |
Justo JF, MacHado WVM, Assali LVC. Behavior of 3d-transition metals in different SiC polytypes Physica B: Condensed Matter. 376: 378-381. DOI: 10.1016/J.Physb.2005.12.097 |
0.358 |
|
| 2006 |
Larico R, Justo JF, MacHado WVM, Assali LVC. Band gap states of interstitial nickel-complexes in diamond Physica B: Condensed Matter. 376: 292-295. DOI: 10.1016/J.Physb.2005.12.075 |
0.376 |
|
| 2005 |
Justo JF, Da Silva CRS, Pereyra I, Assali LVC. Structural and electronic properties of Si1-xCxO 2 Materials Science Forum. 483: 577-580. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.577 |
0.366 |
|
| 2005 |
Machado WVM, Justo JF, Assali LVC. 3d-Transition metals in cubic and hexagonal silicon carbide Materials Science Forum. 483: 531-534. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.531 |
0.361 |
|
| 2005 |
Assali LVC, Machado WVM, Justo JF. Manganese impurity in boron nitride and gallium nitride Materials Science Forum. 483: 1047-1050. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.1047 |
0.324 |
|
| 2005 |
Assali LVC, Larico R, Machado WVM, Justo JF. Nickel-vacancy complexes in diamond: An Ab-initio investigation Materials Science Forum. 483: 1043-1046. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.1043 |
0.358 |
|
| 2005 |
Da Silva CRS, Justo JF, Pereyra I, Assali LVC. A first principles investigation on hypothetical crystalline phases of silicon oxycarbide Diamond and Related Materials. 14: 1142-1145. DOI: 10.1016/J.Diamond.2004.12.011 |
0.34 |
|
| 2005 |
Larico R, MacHado WVM, Assali LVC, Justo JF. A theoretical model for the nickel-related defect centers in diamond Diamond and Related Materials. 14: 380-382. DOI: 10.1016/J.Diamond.2004.10.007 |
0.354 |
|
| 2004 |
Ayres F, Assali LVC, Machado WVM, Justo JF. A first principles investigation of mercuric iodide: Bulk properties and intrinsic defects Brazilian Journal of Physics. 34: 681-683. DOI: 10.1590/S0103-97332004000400042 |
0.372 |
|
| 2004 |
Larico R, Justo JF, Machado WVM, Assali LVC. Electronic properties of isolated nickel in diamond Brazilian Journal of Physics. 34: 669-671. DOI: 10.1590/S0103-97332004000400038 |
0.376 |
|
| 2004 |
Assali LVC, Machado WVM, Justo JF. Titanium impurities in silicon, diamond, and silicon carbide Brazilian Journal of Physics. 34: 602-604. DOI: 10.1590/S0103-97332004000400016 |
0.409 |
|
| 2004 |
Assali LVC, Machado WVM, Justo JF. Structural and electronic properties of 3d transition metal impurities in silicon carbide Physical Review B - Condensed Matter and Materials Physics. 69: 155212-1-155212-8. DOI: 10.1103/Physrevb.69.155212 |
0.377 |
|
| 2004 |
De Araújo MM, Justo JF, Nunes RW. Electronic charge effects on dislocation cores in silicon Applied Physics Letters. 85: 5610-5612. DOI: 10.1063/1.1830073 |
0.355 |
|
| 2004 |
Da Silva CRS, Justo JF, Pereyra I. Crystalline silicon oxycarbide: Is there a native oxide for silicon carbide? Applied Physics Letters. 84: 4845-4847. DOI: 10.1063/1.1759373 |
0.316 |
|
| 2004 |
Larico R, Assali LVC, Machado WVM, Justo JF. Isolated nickel impurities in diamond: A microscopic model for the electrically active centers Applied Physics Letters. 84: 720-722. DOI: 10.1063/1.1645327 |
0.37 |
|
| 2004 |
Da Silva CRS, Justo JF, Fazzio A. On the reversibility of hydrogen effects on the properties of amorphous silicon carbide Journal of Non-Crystalline Solids. 338: 299-302. DOI: 10.1016/J.Jnoncrysol.2004.02.091 |
0.351 |
|
| 2004 |
Nunes RW, Assali LVC, Justo JF. Ab initio investigations on the dislocation core properties in zinc-blende semiconductors Computational Materials Science. 30: 67-72. DOI: 10.1016/J.Commatsci.2004.01.010 |
0.408 |
|
| 2004 |
Larico R, Assali LVC, Machado WVM, Justo JF. Nickel impurities in diamond: A FP-LAPW investigation Computational Materials Science. 30: 62-66. DOI: 10.1016/J.Commatsci.2004.01.009 |
0.387 |
|
| 2004 |
Barbosa KO, Assali LVC, Machado WVM, Justo JF. Structural and electronic properties of Ti impurities in SiC: An ab initio investigation Computational Materials Science. 30: 57-61. DOI: 10.1016/J.Commatsci.2004.01.008 |
0.411 |
|
| 2003 |
Ayres F, Machado WVM, Justo JF, Assali LVC. Defects in mercuric iodide: An APW investigation Physica B: Condensed Matter. 340: 918-922. DOI: 10.1016/J.Physb.2003.09.236 |
0.381 |
|
| 2003 |
Larico R, Justo JF, Machado WVM, Assali LVC. An ab initio investigation on nickel impurities in diamond Physica B: Condensed Matter. 340: 84-88. DOI: 10.1016/J.Physb.2003.09.010 |
0.383 |
|
| 2003 |
Assali LVC, Machado WVM, Justo JF. Transition metal impurities in 3C-SiC and 2H-SiC Physica B: Condensed Matter. 340: 116-120. DOI: 10.1016/J.Physb.2003.09.008 |
0.332 |
|
| 2003 |
Assali LVC, Gan F, Kimerling LC, Justo JF. Electronic structure of light emitting centers in Er doped Si Applied Physics a: Materials Science and Processing. 76: 991-997. DOI: 10.1007/S00339-002-1990-7 |
0.319 |
|
| 2002 |
Justo JF, Da Silva CRS. Modelling amorphous materials: Silicon nitride and silicon carbide Defect and Diffusion Forum. 206: 19-29. DOI: 10.4028/Www.Scientific.Net/Ddf.206-207.19 |
0.355 |
|
| 2002 |
Justo JF. Dislocations in semiconductors: Core structure and mobility Defect and Diffusion Forum. 200: 97-106. DOI: 10.4028/Www.Scientific.Net/Ddf.200-202.97 |
0.385 |
|
| 2002 |
De Brito Mota F, Justo JF, Fazzio A. Defect centers in a-SiNx: Electronic and structural properties Brazilian Journal of Physics. 32: 436-438. DOI: 10.1590/S0103-97332002000200055 |
0.386 |
|
| 2002 |
Zhao S, Justo JF, Assali LVC, Kimerling LC. Structure and bonding of iron-acceptor pairs in silicon Brazilian Journal of Physics. 32: 418-420. DOI: 10.1590/S0103-97332002000200049 |
0.31 |
|
| 2002 |
Antonelli A, Justo JF, Fazzio A. Arsenic segregation, pairing and mobility on the cores of partial dislocations in silicon Journal of Physics Condensed Matter. 14: 12761-12765. DOI: 10.1088/0953-8984/14/48/314 |
0.373 |
|
| 2002 |
Justo JF, Nunes RW, Assali LVC. Microscopic structure of the 90° and 30° partial dislocations in gallium arsenide Journal of Physics Condensed Matter. 14: 12749-12754. DOI: 10.1088/0953-8984/14/48/312 |
0.392 |
|
| 2002 |
Antonelli A, Justo JF, Fazzio A. Interaction of As impurities with 30° partial dislocations in Si: An ab initio investigation Journal of Applied Physics. 91: 5892-5895. DOI: 10.1063/1.1466877 |
0.378 |
|
| 2002 |
Cai W, Bulatov VV, Justo JF, Argon AS, Yip S. Kinetic Monte Carlo approach to modeling dislocation mobility Computational Materials Science. 23: 124-130. DOI: 10.1016/S0927-0256(01)00223-3 |
0.571 |
|
| 2001 |
Bulatov VV, Justo JF, Cai W, Yip S, Argon AS, Lenosky T, Koning MD, Rubia TDDL. Parameter-free modelling of dislocation motion: the case of silicon Philosophical Magazine. 81: 1257-1281. DOI: 10.1080/01418610108214440 |
0.606 |
|
| 2001 |
Justo JF, Assali LVC. Reconstruction defects on partial dislocations in semiconductors Applied Physics Letters. 79: 3630-3632. DOI: 10.1063/1.1421623 |
0.391 |
|
| 2001 |
Zhao S, Assali LVC, Justo JF, Gilmer GH, Kimerling LC. Iron-acceptor pairs in silicon: Structure and formation processes Journal of Applied Physics. 90: 2744-2754. DOI: 10.1063/1.1389763 |
0.349 |
|
| 2001 |
Schmidt TM, Justo JF, Fazzio A. Stacking fault effects in pure and n-type doped gaas Applied Physics Letters. 78: 907-909. DOI: 10.1063/1.1347005 |
0.301 |
|
| 2001 |
Justo JF, De Koning M, Cai W, Bulatov VV. Point defect interaction with dislocations in silicon Materials Science and Engineering A. 309: 129-132. DOI: 10.1016/S0921-5093(00)01738-X |
0.501 |
|
| 2001 |
Justo JF, Schmidt TM, Fazzio A, Antonelli A. Segregation of dopant atoms on extended defects in semiconductors Physica B: Condensed Matter. 302: 403-407. DOI: 10.1016/S0921-4526(01)00462-8 |
0.376 |
|
| 2001 |
Justo JF, Antonelli A, Fazzio A. The energetics of dislocation cores in semiconductors and their role on dislocation mobility Physica B: Condensed Matter. 302: 398-402. DOI: 10.1016/S0921-4526(01)00461-6 |
0.399 |
|
| 2001 |
Justo JF, Antonelli A, Fazzio A. Dislocation core properties in semiconductors Solid State Communications. 118: 651-655. DOI: 10.1016/S0038-1098(01)00197-1 |
0.396 |
|
| 2000 |
Cai W, Bulatov VV, Justo JF, Argon AS, Yip S. Intrinsic mobility of a dissociated dislocation in silicon Physical Review Letters. 84: 3346-9. PMID 11019086 DOI: 10.1103/Physrevlett.84.3346 |
0.579 |
|
| 2000 |
Justo JF, Koning Md, Cai W, Bulatov VV. Vacancy interaction with dislocations in silicon: the shuffle-glide competition Physical Review Letters. 84: 2172-2175. PMID 11017236 DOI: 10.1103/Physrevlett.84.2172 |
0.499 |
|
| 2000 |
Schmidt TM, Justo JF, Fazzio A. Effect of a stacking fault on the electronic properties of dopants in gallium arsenide Journal of Physics Condensed Matter. 12: 10235-10239. DOI: 10.1088/0953-8984/12/49/323 |
0.332 |
|
| 2000 |
Justo JF, Fazzio A, Antonelli A. Dislocation core reconstruction in zinc-blende semiconductors Journal of Physics Condensed Matter. 12: 10039-10044. DOI: 10.1088/0953-8984/12/49/303 |
0.376 |
|
| 1999 |
De Koning M, Antonelli A, Bazant MZ, Kaxiras E, Justo JF. Unstable stacking fault free energies in silicon through empirical modeling Materials Research Society Symposium - Proceedings. 539: 175-180. DOI: 10.1557/Proc-539-175 |
0.346 |
|
| 1999 |
Justo JF, De Brito Mota F, Fazzio A. Hydrogenated amorphous silicon nitride: structural and electronic properties Materials Research Society Symposium - Proceedings. 538: 555-560. DOI: 10.1557/Proc-538-555 |
0.38 |
|
| 1999 |
Justo JF, Antonelli A, Fazzio A. Point defect interactions with extended defects in silicon Materials Research Society Symposium - Proceedings. 538: 419-423. DOI: 10.1557/Proc-538-419 |
0.355 |
|
| 1999 |
Justo JF. Electronic properties of copper-3d transition-metal pairs in silicon International Journal of Modern Physics B. 13: 2387-2396. DOI: 10.1142/S0217979299002472 |
0.355 |
|
| 1999 |
Antonelli A, Justo JF, Fazzio A. Point defect interactions with extended defects in semiconductors Physical Review B - Condensed Matter and Materials Physics. 60: 4711-4714. DOI: 10.1103/Physrevb.60.4711 |
0.334 |
|
| 1999 |
Justo JF, Bulatov VV, Yip S. Dislocation Core Reconstruction And Its Effect On Dislocation Mobility In Silicon Journal of Applied Physics. 86: 4249-4257. DOI: 10.1063/1.371353 |
0.537 |
|
| 1999 |
De Brito Mota F, Justo JF, Fazzio A. Hydrogen role on the properties of amorphous silicon nitride Journal of Applied Physics. 86: 1843-1847. DOI: 10.1063/1.370977 |
0.33 |
|
| 1999 |
Justo JF, Antonelli A, Schmidt TM, Fazzio A. Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon Physica B: Condensed Matter. 273: 473-475. DOI: 10.1016/S0921-4526(99)00528-1 |
0.345 |
|
| 1998 |
Cai W, Bulatov VV, Justo JF, Yip S, Argon AS. Dynamics of Dissociated Dislocations in SI: A Micro-Meso Simulation Methodology Mrs Proceedings. 538: 69. DOI: 10.1557/Proc-538-69 |
0.603 |
|
| 1998 |
De Brito Mota F, Justo JF, Fazzio A. Structural properties of amorphous silicon nitride Physical Review B - Condensed Matter and Materials Physics. 58: 8323-8328. DOI: 10.1103/Physrevb.58.8323 |
0.374 |
|
| 1998 |
Assali LVC, Justo JF. Electronic properties and hyperfine parameters of gold-3d-transition-metal impurity pairs in silicon Physical Review B - Condensed Matter and Materials Physics. 58: 3870-3878. DOI: 10.1103/Physrevb.58.3870 |
0.37 |
|
| 1998 |
Justo JF, Bazant MZ, Kaxiras E, Bulatov VV, Yip S. Interatomic Potential For Silicon Defects And Disordered Phases Physical Review B. 58: 2539-2550. DOI: 10.1103/Physrevb.58.2539 |
0.54 |
|
| 1998 |
Koning Md, Antonelli A, Bazant MZ, Kaxiras E, Justo JF. Finite-temperature molecular-dynamics study of unstable stacking fault free energies in silicon Physical Review B. 58: 12555-12558. DOI: 10.1103/Physrevb.58.12555 |
0.356 |
|
| 1998 |
De Brito Mota F, Justo JF, Fazzio A. Structural and electronic properties of silicon nitride materials International Journal of Quantum Chemistry. 70: 951-960. DOI: 10.1002/(Sici)1097-461X(1998)70:4/5<973::Aid-Qua43>3.0.Co;2-Y |
0.412 |
|
| 1997 |
Justo JF, Assali LVC. Chemical trends in electronic properties of gold-3D transition metal impurity pairs in silicon Materials Research Society Symposium - Proceedings. 469: 511-516. DOI: 10.1557/Proc-469-511 |
0.354 |
|
| 1997 |
Justo JF, Bulatov VV, Yip S. Atomistic Mechanisms of Dislocation Mobility in Silicon Mrs Proceedings. 469: 505. DOI: 10.1557/Proc-469-505 |
0.498 |
|
| 1997 |
Justo JF, Bazant MZ, Kaxiras E, Bulatov VV, Yip S. Interatomic Potential for Condensed Phases and Bulk Defects in Silicon Mrs Proceedings. 469: 217. DOI: 10.1557/Proc-469-217 |
0.49 |
|
| 1997 |
Bulatov VV, Justo JF, Cai W, Yip S. Kink Asymmetry and Multiplicity in Dislocation Cores Physical Review Letters. 79: 5042-5045. DOI: 10.1103/Physrevlett.79.5042 |
0.595 |
|
| 1997 |
Bazant MZ, Kaxiras E, Justo JF. Environment-dependent interatomic potential for bulk silicon Physical Review B. 56: 8542-8552. DOI: 10.1103/Physrevb.56.8542 |
0.378 |
|
| 1997 |
Porter LJ, Justo JF, Yip S. The importance of Grüneisen parameters in developing interatomic potentials Journal of Applied Physics. 82: 5378-5381. DOI: 10.1063/1.366305 |
0.451 |
|
| 1997 |
Justo JF, Bulatov VV, Yip S. Core effects in dislocation intersection Scripta Materialia. 36: 707-712. DOI: 10.1016/S1359-6462(96)00445-9 |
0.548 |
|
| 1997 |
Bulatov V, Nastar M, Justo J, Yip S. Atomistic modeling of crystal-defect mobility and interactions Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 121: 251-256. DOI: 10.1016/S0168-583X(96)00433-8 |
0.554 |
|
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