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Charter D. Stinespring - Publications

Affiliations: 
West Virginia University, Morgantown, WV, United States 
Area:
Chemical Engineering, Condensed Matter Physics, Materials Science Engineering
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44 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Graves A, Chaudhari S, Stinespring C. Two-step synthesis of few layer graphene using plasma etching and atmospheric pressure rapid thermal annealing Diamond and Related Materials. 101: 107568. DOI: 10.1016/J.Diamond.2019.107568  0.589
2016 Sierros KA, Ramayanam SS, Stinespring CD. Nanotribological properties of few layer graphene surfaces, prepared by bottom-up and top-down methods, in ambient air and liquid environments Journal of Materials Research. 31: 1924-1931. DOI: 10.1557/Jmr.2016.86  0.378
2016 Raghavan S, Denig TJ, Nelson TC, Chaudhari S, Stinespring CD. Characterization of graphene-on-insulator films formed using plasma based surface chemistry Carbon. 99: 212-221. DOI: 10.1016/J.Carbon.2015.11.067  0.784
2015 Chaudhari S, Graves AR, Cain MV, Stinespring CD. Controlled synthesis of few layer graphene films for Gas sensor applications Materials Research Society Symposium Proceedings. 1786: 65-70. DOI: 10.1557/Opl.2015.849  0.537
2012 Raghavan S, Denig TJ, Nelson TC, Stinespring CD. Novel surface chemical synthesis route for large area graphene-on-insulator films Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 030605. DOI: 10.1116/1.4710997  0.597
2010 Raghavan S, Nelson TC, Denig T, Stinespring CD. Halogen based surface chemistries for graphene synthesis Materials Research Society Symposium Proceedings. 1259: 5-10. DOI: 10.1557/Proc-1259-S17-02  0.757
2010 Woodworth AA, Stinespring CD. Surface chemistry of Ni induced graphite formation on the 6H-SiC (0 0 0 1) surface and its implications for graphene synthesis Carbon. 48: 1999-2003. DOI: 10.1016/J.Carbon.2010.02.007  0.795
2009 Rahimi R, Miller CM, Munger A, Raghavan S, Stinespring CD, Korakakis D. Study of the conduction mechanism and the electrical response of strained nano-thin 3C-SiC films on Si used as surface sensors Materials Research Society Symposium Proceedings. 1129: 67-72. DOI: 10.1557/Proc-1129-V04-20  0.53
2009 Rahimi R, Miller CM, Raghavan S, Stinespring CD, Korakakis D. Electrical properties of strained nano-thin 3C-SiC/Si heterostructures Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/5/055108  0.494
2008 Rahimi R, Raghavan S, Shelton NP, Penigalapati D, Balling A, Woodworth AA, Denig T, Stinespring CD, Korakakis D. Investigation of Nano-thin (5-SiC Layers for Chemical Sensors Materials Research Society Symposium Proceedings. 1056: 374-379. DOI: 10.1557/Proc-1056-Hh08-05  0.717
2008 Syed AA, Cao XA, Woodworth AA, Stinespring CD. Electrical characteristics of PtAu Schottky contacts to plasma-etched AlGaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1420-1424. DOI: 10.1116/1.2958254  0.709
2007 Peng CY, Woodworth AA, Stinespring CD. Method for rapid determination of ion gauge sensitivity factors. The Review of Scientific Instruments. 78: 113908. PMID 18052489 DOI: 10.1063/1.2814158  0.735
2007 Ziemer KS, Woodworth AA, Peng CY, Stinespring CD. Growth of silicon carbide on hydrogen-terminated Si (001) 1 × 1 surfaces using dimethyl- and monomethyl silane Diamond and Related Materials. 16: 486-493. DOI: 10.1016/J.Diamond.2006.09.026  0.779
2006 Woodworth AA, Raghavan S, Stinespring CD. Thermal interactions of Ni on stepped 6H-SiC surfaces: Implications for thin film microstructure Materials Research Society Symposium Proceedings. 911: 377-382. DOI: 10.1557/Proc-0911-B10-03  0.805
2005 Stinespring CD, Peng CY, Woodworth AA, Meehan K, Murdoch-Kitt MJ, Anderson CL. Interdiffusion and reaction of Pd on atomically stepped 6H-SiC surfaces: Progress toward thermally stable high temperature gas sensors Materials Research Society Symposium Proceedings. 828: 361-366. DOI: 10.1557/Proc-828-A7.10  0.778
2005 Stinespring CD, Peng CY, Woodworth AA, Ziemer KS. Growth of Sic on the Si (001) 1×1 sufrace using monomethyl- and dimethyl-silanes Aiche Annual Meeting, Conference Proceedings. 558.  0.784
2002 Myers TH, VanMil BL, Holbert LJ, Peng CY, Stinespring CD, Alam J, Freitas JA, Dmitriev VA, Pechnikov A, Shapovalova Y, Ivantsov V. Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN Journal of Crystal Growth. 246: 244-251. DOI: 10.1016/S0022-0248(02)01748-7  0.433
2000 Gold JS, Lannon JS, Tolani VL, Ziemer KS, Stinespring CD. Studies of the initial stages of silicon carbide growth using molecular hydrocarbon and methyl radical gas species Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.293  0.494
2000 Ptak A, Ziemer K, Holbert L, Stinespring C, Myers T. Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources Mrs Internet Journal of Nitride Semiconductor Research. 5: 195-201. DOI: 10.1557/s1092578300004270  0.331
2000 Ptak AJ, Ziemer KS, Holbert LJ, Stinespring CD, Myers TH. Formation of BN and AlBN during nitridation of sapphire using RF plasma sources Materials Research Society Symposium - Proceedings. 595.  0.351
1999 Ptak A, Ziemer K, Holbert L, Stinespring C, Myers T. Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources Mrs Proceedings. 595. DOI: 10.1557/PROC-595-F99W3.33  0.338
1999 Myers TH, Millecchia MR, Ptak AJ, Ziemer KS, Stinespring CD. Influence of active nitrogen species on high temperature limitations for (0001̱) GaN growth by rf plasma-assisted molecular beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1654. DOI: 10.1116/1.590805  0.424
1999 Ptak AJ, Millecchia MR, Myers TH, Ziemer KS, Stinespring CD. The relation of active nitrogen species to high-temperature limitations for (0001) GaN growth by radio-frequency-plasma-assisted molecular beam epitaxy Applied Physics Letters. 74: 3836-3838. DOI: 10.1063/1.124196  0.395
1999 Hirsch LS, Haakenaasen R, Colin T, Ziemer KS, Stinespring CD, Lovold S, Myers TH. X-ray photoelectron spectroscopy study of oxide and Te overlayers on As-grown and etched HgCdTe Journal of Electronic Materials. 28: 810-816. DOI: 10.1007/S11664-999-0075-1  0.44
1998 Lannon JM, Gold JS, Stinespring CD. Evidence for surfactant mediated nucleation and growth of diamond Applied Physics Letters. 73: 226-228. DOI: 10.1063/1.121763  0.449
1998 Ziemer KS, Stinespring CD, Hirsch LS, Myers TH. Characterization of atomic hydrogen-etched HgCdTe surfaces Journal of Crystal Growth. 191: 594-598.  0.326
1998 Hirsch LS, Ziemer KS, Richards-Babb MR, Stinespring CD, Myers TH, Colin T. The use of atomic hydrogen for low temperature oxide removal from HgCdTe Journal of Electronic Materials. 27: 651-656.  0.361
1996 Stinespring CD, Lannon JM, Gold JS, Guntu M, Kumar S. Wide bandgap semiconductor growth under conditions of controlled energy deposition Proceedings of the 1995 9th International Conference On Surface Modification Technologies. 565-581.  0.322
1995 Lannon JM, Gold JS, Stinespring CD. Hydrogen ion interactions with silicon carbide and the nucleation of diamond thin films Journal of Applied Physics. 77: 3823-3830. DOI: 10.1063/1.358558  0.401
1995 Lannon JM, Gold JS, Stinespring CD. Role of ions in bias enhanced nucleation of diamond Materials Research Society Symposium - Proceedings. 388: 177-182.  0.332
1994 Lannon JM, Gold JS, Stinespring CD. Surface studies relevant to the initial stages of diamond nucleation Materials Research Society Symposium - Proceedings. 339: 63-68. DOI: 10.1557/Proc-339-63  0.361
1992 Freedman A, Robinson GN, Stinespring CD. Fluorine Atom Addition to the Diamond (111) Surface Mrs Proceedings. 242. DOI: 10.1557/Proc-242-109  0.431
1992 Freedman A, Stinespring CD. Halogenation of gallium arsenide(100) and (111) surfaces using atomic beams The Journal of Physical Chemistry. 96: 2253-2258. DOI: 10.1021/J100184A042  0.449
1992 Freedman A, Stinespring CD. Halogenation of GaAs (100) and (111) surfaces using atomic beams Journal of Physical Chemistry. 96: 2253-2258.  0.336
1990 Freedman A, Stinespring CD. Halogenation of Diamond (100) Using Atomic Beams Mrs Proceedings. 204. DOI: 10.1557/Proc-204-571  0.354
1990 Freedman A, Stinespring CD. Fluorination of diamond (100) by atomic and molecular beams Applied Physics Letters. 57: 1194-1196. DOI: 10.1016/0008-6223(90)90320-X  0.364
1989 Stinespring CD, Freedman A. Laser Induced Surface Chemical Epitaxy of II-VI Materials Mrs Proceedings. 158. DOI: 10.1557/Proc-158-381  0.401
1989 Stinespring CD, Wormhoudt JC. Surface studies relevant to silicon carbide chemical vapor deposition Journal of Applied Physics. 65: 1733-1742. DOI: 10.1063/1.342947  0.37
1988 Stinespring CD, Freedman A, Wormhoudt JC. Gas-Surface Reaction Studies Relevant to SiC Chemical Vapor Deposition Mrs Proceedings. 131. DOI: 10.1557/Proc-131-227  0.419
1988 Stinespring CD, Wormhoudt JC. Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition Journal of Crystal Growth. 87: 481-493. DOI: 10.1016/0022-0248(88)90096-6  0.326
1988 Stinespring CD, Freedman A. Surface chemistry of dimethyl cadmium and dimethyl tellurium at 295 K Chemical Physics Letters. 143: 584-588. DOI: 10.1016/0009-2614(88)87071-4  0.315
1986 Stinespring CD, Kolb CE, Annen KD. Theoretical Studies of Gravitational Effects in Chemical Vapor Deposition Mrs Proceedings. 87. DOI: 10.1557/Proc-87-7  0.332
1986 Stinespring CD, Freedman A, Wormhoudt JC, Kolb CE. Reactions of Atomic and Molecular Fluorine on Silicon Surfaces Mrs Proceedings. 68. DOI: 10.1557/Proc-68-447  0.433
1986 Stinespring CD, Freedman A. Studies of atomic and molecular fluorine reactions on silicon surfaces Applied Physics Letters. 48: 718-720. DOI: 10.1063/1.96700  0.342
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