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Hao Lu - Publications

Affiliations: 
2014 Electrical Engineering University of Notre Dame, Notre Dame, IN, United States 
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Lu H, Paletti P, Li W, Fay P, Ytterdal T, Seabaugh A. Tunnel FET Analog Benchmarking and Circuit Design Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 19-25. DOI: 10.1109/Jxcdc.2018.2817541  0.616
2017 Xu K, Lu H, Kinder EW, Seabaugh A, Fullerton-Shirey SK. Monolayer Solid State Electrolyte for Electric Double Layer Gating of Graphene Field-Effect Transistors. Acs Nano. PMID 28511001 DOI: 10.1021/Acsnano.6B08505  0.519
2017 Li H, Xu K, Bourdon B, Lu H, Lin Y, Robinson JA, Seabaugh AC, Fullerton-Shirey SK. Electric Double Layer Dynamics in Poly(ethylene oxide) LiClO4on Graphene Transistors The Journal of Physical Chemistry C. 121: 16996-17004. DOI: 10.1021/Acs.Jpcc.7B04788  0.531
2016 Lu H, Li W, Lu Y, Fay P, Ytterdal T, Seabaugh A. Universal Charge-Conserving TFET SPICE Model Incorporating Gate Current and Noise Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 20-27. DOI: 10.1109/Jxcdc.2016.2582204  0.58
2015 Lu H, Kwak I, Park JH, Oneill K, Furuyama T, Kobayashi N, Seabaugh A, Kummel A, Fullerton-Shirey SK. Solution-Cast Monolayers of Cobalt Crown Ether Phthalocyanine on Highly Ordered Pyrolytic Graphite Journal of Physical Chemistry C. 119: 21992-22000. DOI: 10.1021/Acs.Jpcc.5B05233  0.512
2015 Lu H, Esseni D, Seabaugh A. Universal analytic model for tunnel FET circuit simulation Solid-State Electronics. 108: 110-117. DOI: 10.1016/J.Sse.2014.12.002  0.579
2014 Lu H, Seabaugh A. Tunnel field-effect transistors: State-of-the-art Ieee Journal of the Electron Devices Society. 2: 44-49. DOI: 10.1109/Jeds.2014.2326622  0.55
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