Lawrence J. Overzet - Publications

Affiliations: 
Electrical Engineering University of Texas at Dallas, Richardson, TX, United States 
Area:
Electronics and Electrical Engineering

86 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Hernandez K, Overzet LJ, Goeckner MJ. Electron dynamics during the reignition of pulsed capacitively-coupled radio-frequency discharges Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 34005. DOI: 10.1116/1.5133790  0.318
2019 Press AF, Goeckner MJ, Overzet LJ. Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma Journal of Vacuum Science & Technology B. 37: 062926. DOI: 10.1116/1.5132753  0.418
2018 Michaud R, Felix V, Stolz A, Aubry O, Lefaucheux P, Dzikowski S, Gathen VSd, Overzet LJ, Dussart R. Direct current microhollow cathode discharges on silicon devices operating in argon and helium Plasma Sources Science and Technology. 27: 25005. DOI: 10.1088/1361-6595/Aaa870  0.379
2017 Poulose J, Goeckner M, Shannon S, Coumou D, Overzet L. Driving frequency fluctuations in pulsed capacitively coupled plasmas The European Physical Journal D. 71. DOI: 10.1140/Epjd/E2017-80096-7  0.417
2016 Sundaram NG, Ramachandran S, Overzet L, Goeckner M, Lee GS. Study of layered diamond like carbon and PECVD fluorocarbon films for ultra low dielectric constant interlayer dielectric applications Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2016.97  0.595
2016 Felix V, Lefaucheux P, Aubry O, Golda J, Schulz-Von Der Gathen V, Overzet LJ, Dussart R. Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices Plasma Sources Science and Technology. 25. DOI: 10.1088/0963-0252/25/2/025021  0.37
2015 Sundaram N, Lee GS, Goeckner M, Overzet LJ. Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922258  0.314
2015 Urrabazo D, Veyan JF, Goeckner MJ, Overzet LJ. Ion induced electron emission from chemically cleaned Si and Ge Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/40/405201  0.415
2015 Urrabazo D, Overzet LJ. The effects of the Fermi level on ion induced electron emission from chemically and sputter cleaned semiconductors Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/34/345203  0.431
2014 Bates RL, Goeckner MJ, Overzet LJ. Correction of aspect ratio dependent etch disparities Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4890004  0.404
2014 Bates RL, Stephan Thamban PL, Goeckner MJ, Overzet LJ. Silicon etch using SF6/C4F8/Ar gas mixtures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4880800  0.506
2013 Sundaram NG, Ramachandran S, Lee GS, Overzet L. Study and optimization of PECVD films containing fluorine and carbon layered with diamond like carbon films as ultra low dielectric constant interlayer dielectrics Materials Research Society Symposium Proceedings. 1511: 56-61. DOI: 10.1557/Opl.2013.37  0.595
2013 Saraf IR, Goeckner MJ, Goodlin BE, Kirmse KHR, Nelson CT, Overzet LJ. Kinetics of the deposition step in time multiplexed deep silicon etches Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4769873  0.804
2013 Kulsreshath MK, Sadeghi N, Schwaederle L, Dufour T, Overzet LJ, Lefaucheux P, Dussart R. Ignition and extinction phenomena in helium micro hollow cathode discharges Journal of Applied Physics. 114. DOI: 10.1063/1.4858418  0.34
2013 Jung D, Kim D, Lee KH, Overzet LJ, Lee GS. Transparent film heaters using multi-walled carbon nanotube sheets Sensors and Actuators, a: Physical. 199: 176-180. DOI: 10.1016/J.Sna.2013.05.024  0.32
2013 Jung D, Kim JH, Lee KH, Overzet LJ, Lee GS. Effects of pre-annealing of Fe catalysts on growth of spin-capable carbon nanotubes Diamond and Related Materials. 38: 87-92. DOI: 10.1016/J.Diamond.2013.06.021  0.303
2013 Wells GP, Estrada-Raygoza IC, Thamban PLS, Nelson CT, Chung CW, Overzet LJ, Goeckner MJ. Understanding the synthesis of ethylene glycol pulsed plasma discharges Plasma Processes and Polymers. 10: 119-135. DOI: 10.1002/Ppap.201200066  0.381
2012 Jung DW, Lee KH, Kim JH, Burk D, Overzet LJ, Lee GS, Kong SH. Optimizing control of Fe catalysts for carbon nanotube growth. Journal of Nanoscience and Nanotechnology. 12: 5663-8. PMID 22966629 DOI: 10.1166/Jnn.2012.6349  0.31
2012 Lee KH, Overzet LJ, Lee GS, Yang DJ, Lee BJ, Jang HS. Characterization of spin-capable multi-walled carbon nanotubes grown an a Fe catalyst film under helium gas Journal of the Korean Physical Society. 60: 1886-1890. DOI: 10.3938/Jkps.60.1886  0.344
2012 Nelson CT, Overzet LJ, Goeckner MJ. Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4746411  0.324
2012 Lee KH, Jung DW, Burk D, Overzet LJ, Lee GS. Effect of acetylene concentration and thermal ramping rate on the growth of spin-capable carbon nanotube forests Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4736985  0.305
2012 Nelson CT, Overzet LJ, Goeckner MJ. Role of surface temperature in fluorocarbon plasma-surface interactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4729445  0.391
2012 Nelson CT, Overzet LJ, Goeckner MJ. Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3679408  0.344
2012 Schwaederlé L, Kulsreshath MK, Overzet LJ, Lefaucheux P, Tillocher T, Dussart R. Breakdown study of dc silicon micro-discharge devices Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/6/065201  0.339
2012 Kulsreshath MK, Schwaederle L, Overzet LJ, Lefaucheux P, Ladroue J, Tillocher T, Aubry O, Woytasik M, Schelcher G, Dussart R. Study of dc micro-discharge arrays made in silicon using CMOS compatible technology Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/28/285202  0.358
2011 Ogawa D, Goeckner MJ, Overzet LJ. Optical observation of nitrogen propagation in argon plasma Ieee Transactions On Plasma Science. 39: 2544-2545. DOI: 10.1109/Tps.2011.2159625  0.57
2011 Saraf I, Goeckner M, Goodlin B, Kirmse K, Overzet L. Mask undercut in deep silicon etch Applied Physics Letters. 98: 161502. DOI: 10.1063/1.3579542  0.814
2011 Chae HY, Chung CW, Chung JW, Hong MP, Joo JH, Kim HJ, Kim DH, Kusano E, Overzet L, Pu YK, Setsuhara Y, Shi JJ, Terashima K, Watanabe T. The 10th Asia-Pacific conference on Plasma Science and Technology (APCPST 2010): The 153rd symposium on Plasma Science for Materials (SPSM 2010) Thin Solid Films. 519: 6637-6638. DOI: 10.1016/J.Tsf.2011.06.001  0.372
2010 Overzet LJ, Jung D, Mandra MA, Goeckner M, Dufour T, Dussart R, Lefaucheux P. RF impedance measurements of DC atmospheric micro-discharges European Physical Journal D. 60: 449-454. DOI: 10.1140/Epjd/E2010-00274-5  0.427
2010 Dussart R, Overzet LJ, Lefaucheux P, Dufour T, Kulsreshath M, Mandra MA, Tillocher T, Aubry O, Dozias S, Ranson P, Lee JB, Goeckner M. Integrated micro-plasmas in silicon operating in helium European Physical Journal D. 60: 601-608. DOI: 10.1140/Epjd/E2010-00272-7  0.349
2010 Ogawa D, Chung CW, Goeckner M, Overzet L. Transient effects caused by pulsed gas and liquid injections into low pressure plasmas Plasma Sources Science and Technology. 19. DOI: 10.1088/0963-0252/19/3/034013  0.613
2010 Jindal AK, Overzet L, Goeckner M. Time Resolved Microwave Interferometry Measurement of the Electron Density in a Pulsed 1,3-Butadiene Discharge Plasma Chemistry and Plasma Processing. 30: 287-297. DOI: 10.1007/S11090-010-9213-Z  0.436
2009 Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Relationship between gas-phase chemistries and surface processes in fluorocarbon etch plasmas: A process rate model Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 631-642. DOI: 10.1116/1.3136850  0.818
2009 Ogawa D, Saraf I, Sra A, Timmons R, Goeckner M, Overzet L. The direct injection of liquid droplets into low pressure plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 342-351. DOI: 10.1116/1.3081965  0.797
2009 Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Chemistry in long residence time fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 193-208. DOI: 10.1116/1.3065678  0.769
2009 Goeckner M, Ogawa D, Saraf I, Overzet L. Progress report: Direct injection of liquids into low-pressure plasmas Journal of Physics: Conference Series. 162. DOI: 10.1088/1742-6596/162/1/012014  0.577
2009 Lee KH, Jang HS, Eom GY, Lee BJ, Burk D, Overzet L, Yang DJ, Lee GS. Corrigendum to "The enhanced growth of multi-walled carbon nanotubes using an atmospheric pressure plasma jet" [Materials Letters, 62, pp. 3849-3851, 2008] (DOI:10.1016/j.matlet.2008.04.083) Materials Letters. 63: 507. DOI: 10.1016/J.Matlet.2008.11.010  0.328
2008 Tao L, Ramachandran S, Nelson CT, Lin M, Overzet LJ, Goeckner M, Lee G, Willson CG, Wu W, Hu W. Durable diamond-like carbon templates for UV nanoimprint lithography. Nanotechnology. 19: 105302. PMID 21817695 DOI: 10.1088/0957-4484/19/10/105302  0.603
2008 Tillocher T, Dussart R, Overzet LJ, Mellhaoui X, Lefaucheux P, Boufnichel M, Ranson P. Two cryogenic processes involving S F6, O2, and Si F4 for silicon deep etching Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2826280  0.358
2008 Joseph EA, Zhou BS, Sant SP, Overzet LJ, Goeckner MJ. Role of chamber dimension in fluorocarbon based deposition and etching of Si O2 and its effects on gas and surface-phase chemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 545-554. DOI: 10.1116/1.2909963  0.835
2008 Goeckner MJ, Nelson CT, Overzet LJ. Electronegative plasma structure Ieee Transactions On Plasma Science. 36: 996-997. DOI: 10.1109/Tps.2008.922486  0.387
2008 Goeckner MJ, Nelson CT, Sant SP, Jindal AK, Joseph EA, Zhou BS, Padron-Wells G, Jarvis B, Pierce R, Overzet LJ. Plasma-surface interactions Journal of Physics: Conference Series. 133. DOI: 10.1088/1742-6596/133/1/012010  0.8
2008 Dufour T, Dussart R, Lefaucheux P, Ranson P, Overzet LJ, Mandra M, Lee JB, Goeckner M. Effect of limiting the cathode surface on direct current microhollow cathode discharge in helium Applied Physics Letters. 93. DOI: 10.1063/1.2966144  0.356
2008 Chandrashekar A, Ramachandran S, Pollack G, Lee JS, Lee GS, Overzet L. Forming carbon nanotube composites by directly coating forests with inorganic materials using low pressure chemical vapor deposition Thin Solid Films. 517: 525-530. DOI: 10.1016/J.Tsf.2008.06.064  0.711
2008 Lee KH, Jang HS, Eom GY, Lee BJ, Burk D, Overzet L, Lee GS. The enhanced growth of multi-walled carbon nanotubes using an atmospheric pressure plasma jet Materials Letters. 62: 3849-3851. DOI: 10.1016/J.Matlet.2008.04.083  0.364
2007 Tao L, Ramachandran S, Nelson CT, Overzet LJ, Goeckner MJ, Lee GS, Hu W. Nanofabrication of diamond-like carbon templates for nanoimprint lithography Materials Research Society Symposium Proceedings. 956: 243-248. DOI: 10.1557/Proc-0956-J13-04  0.622
2007 Joseph EA, Sant SP, Goeckner MJ, Overzet LJ, Peng HG, Gidley DW, Kastenmeier BEE. Effects of pore morphology on the diffusive properties of a porous low- κ dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1684-1693. DOI: 10.1116/1.2778694  0.779
2007 Nelson CT, Sant SP, Overzet LJ, Goeckner MJ. Surface kinetics with low ion energy bombardment in fluorocarbon plasmas Plasma Sources Science and Technology. 16: 813-821. DOI: 10.1088/0963-0252/16/4/017  0.818
2007 Liu Y, Overzet L, Goeckner M. Effect of substrate on the nucleation and growth of aluminum films deposited from methylpyrrolidine alane Thin Solid Films. 515: 6730-6736. DOI: 10.1016/J.Tsf.2007.02.006  0.532
2006 Ramachandran S, Tao L, Lee TH, Sant S, Overzet LJ, Goeckner MJ, Kim MJ, Lee GS, Hu W. Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2993-2997. DOI: 10.1116/1.2363409  0.803
2006 Chandrashekar A, Lee JS, Lee GS, Goeckner MJ, Overzet LJ. Gas-phase and sample characterizations of multiwall carbon nanotube growth using an atmospheric pressure plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1812-1817. DOI: 10.1116/1.2232493  0.701
2006 Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ. Oxidation threshold in silicon etching at cryogenic temperatures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1073-1082. DOI: 10.1116/1.2210946  0.443
2006 Jindal AK, Prengler AJ, Overzet LJ, Goeckner MJ. In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 126-132. DOI: 10.1116/1.2141618  0.319
2006 Zhou B, Joseph EA, Overzet LJ, Goeckner MJ. Spectroscopic study of gas and surface phase chemistries of CF 4 plasmas in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 114-125. DOI: 10.1116/1.2138718  0.718
2006 Chandrashekar A, Ramachandran S, Pollack GP, Lee JS, Lee GS, Overzet LJ. Filling of carbon nanotube forests grown by atmospheric pressure PECVD 2006 Ieee Nanotechnology Materials and Devices Conference, Nmdc. 1: 278-279. DOI: 10.1109/NMDC.2006.4388865  0.644
2006 Liu Y, Overzet LJ, Goeckner MJ. Chemical vapor deposition of aluminum from methylpyrrolidine alane complex Thin Solid Films. 510: 48-54. DOI: 10.1016/J.Tsf.2005.12.156  0.558
2005 Zhou B, Joseph EA, Sant SP, Liu Y, Radhakrishnan A, Overzet LJ, Goeckner MJ. Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1657-1667. DOI: 10.1116/1.2049309  0.815
2005 Lee JS, Chandrashekar A, Park BM, Overzet LJ, Lee GS. Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1013-1017. DOI: 10.1116/1.1924582  0.676
2005 Goeckner MJ, Earle GD, Overzet LJ, Maynard JC. Electron confinement on magnetic field lines Ieee Transactions On Plasma Science. 33: 436-437. DOI: 10.1109/Tps.2005.844960  0.322
2005 Mellhaoui X, Dussart R, Tillocher T, Lefaucheux P, Ranson P, Boufnichel M, Overzet LJ. SiO xF y passivation layer in silicon cryoetching Journal of Applied Physics. 98. DOI: 10.1063/1.2133896  0.312
2004 Joseph EA, Zhou B, Sant SP, Overzet LJ, Goeckner MJ. Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 689-697. DOI: 10.1116/1.1722614  0.794
2004 Khater MH, Overzet LJ. Chlorine plasma and polysilicon etch characterization in an inductively coupled plasma etch reactor Plasma Sources Science and Technology. 13: 466-483. DOI: 10.1088/0963-0252/13/3/014  0.801
2003 Srinivasan S, Marquis J, Pratti L, Khater MH, Goeckner MJ, Overzet LJ. The effects on plasma properties of a current node on inductively coupled plasma sources Plasma Sources Science and Technology. 12: 432-442. DOI: 10.1088/0963-0252/12/3/319  0.766
2003 Joseph EA, Goeckner MJ, Overzet LJ, Gidley DW, Kastenmeier BEE. Correlation of pore structure to integration issues for LOW-κ interconnects Advanced Metallization Conference (Amc). 537-541.  0.629
2002 Fang Z, Koo BW, Felch S, Lei Y, Overzet LJ, Goeckner M. Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzer Proceedings of the International Conference On Ion Implantation Technology. 22: 403-406. DOI: 10.1109/IIT.2002.1258025  0.431
2001 Khater MH, Overzet LJ. Stabilizing inductively coupled plasma source impedance and plasma uniformity using a Faraday shield Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 785-792. DOI: 10.1116/1.1355763  0.758
2001 Kanakasabapathy SK, Khater MH, Overzet LJ. Comparison of negative-ion and positive-ion-assisted etching of silicon Applied Physics Letters. 79: 1769-1771. DOI: 10.1063/1.1400765  0.791
2001 Kanakasabapathy SK, Overzet LJ, Midha V, Economou D. Alternating fluxes of positive and negative ions from an ion-ion plasma Applied Physics Letters. 78: 22-24. DOI: 10.1063/1.1338500  0.815
2001 Kanakasabapathy SK, Overzet LJ, Cheung KP, Malyshev MV. Plasma-induced charging reduction through ion-ion synchronous bias International Symposium On Plasma Process-Induced Damage, P2id, Proceedings. 64-67.  0.808
2000 Khater MH, Overzet LJ. New inductively coupled plasma source design with improved azimuthal symmetry control Plasma Sources Science and Technology. 9: 545-561. DOI: 10.1088/0963-0252/9/4/310  0.769
1999 Kleber JL, Overzet LJ. Sheath resistance measurements in the GEC reference reactor Plasma Sources Science and Technology. 8: 534-543. DOI: 10.1088/0963-0252/8/4/303  0.783
1999 Smith BA, Overzet LJ. Observation of the ion-ion transition in an SF6 discharge using a fast floating double probe Plasma Sources Science and Technology. 8: 70-78. DOI: 10.1088/0963-0252/8/1/009  0.381
1998 Khater MH, Overzet LJ, Cherrington BE. Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 490-495. DOI: 10.1116/1.589852  0.773
1998 Overzet LJ, Kleber J. Effect of metastable atom reactions on the electron energy probability functions in afterglows Plasma Sources Science and Technology. 7: 512-523. DOI: 10.1088/0963-0252/7/4/009  0.777
1998 Kanakasabapathy SK, Overzet LJ. A coupled two-sheath simulation of RF bias at high electronegativities Plasma Sources Science and Technology. 7: 289-297. DOI: 10.1088/0963-0252/7/3/007  0.806
1998 Smith BA, Overzet LJ. Improvements to the floating double probe for time-resolved measurements in pulsed rf plasmas Review of Scientific Instruments. 69: 1372-1377.  0.351
1997 Overzet LJ, Smith BA, Kleber J, Kanakasabapathy SK. Negative ion extraction from pulsed discharges Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36: 2443-2449.  0.813
1997 Smith BA, Overzet LJ. Ion energy control in an insulating inductively coupled discharge reactor Applied Physics Letters. 70: 1950-1952.  0.401
1995 Overzet LJ. Microwave Diagnostic Results from the Gaseous Electronics Conference RF Reference Cell. Journal of Research of the National Institute of Standards and Technology. 100: 401-414. PMID 29151750 DOI: 10.6028/Jres.100.030  0.368
1995 Smith BA, Overzet LJ. Time-resolved energy distribution of F- from pulsed radio frequency discharges Journal of Applied Physics. 78: 5195-5197. DOI: 10.1063/1.360682  0.417
1993 Lin Y, Overzet LJ. Negative and positive ions from CF4 and CF4/O 2 rf discharges in etching Si Applied Physics Letters. 62: 675-677. DOI: 10.1063/1.108836  0.417
1993 Lin Y, Overzet LJ. Negative and positive loans from CF4 and CF4/O2 RF discharges in etching silicon Proceedings, Annual Technical Conference - Society of Vacuum Coaters. 343-347.  0.311
1990 Verdeyen JT, Beberman J, Overzet L. Modulated discharges: Effect on plasma parameters and deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 1851-1856. DOI: 10.1116/1.576815  0.327
1989 Overzet LJ, Beberman JH, Verdeyen JT. Enhancement of the negative ion flux to surfaces from radio-frequency processing discharges Journal of Applied Physics. 66: 1622-1631. DOI: 10.1063/1.344376  0.355
1986 Overzet LJ, Verdeyen JT. Enhancement of the plasma density and deposition rate in rf discharges Applied Physics Letters. 48: 695-697. DOI: 10.1063/1.96746  0.357
1986 Fledderman CB, Beberman JH, Hebner G, Overzet LJ, Verdeyen JT. MEASUREMENT OF THE ELECTRON DENSITY AND THE ATTACHMENT RATE COEFFICIENT IN SILANE/HELIUM DISCHARGES Technical Report Afwal-Tr - Air Force Wright Aeronautical Laboratories (United States) 0.33
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