Year |
Citation |
Score |
2020 |
Hernandez K, Overzet LJ, Goeckner MJ. Electron dynamics during the reignition of pulsed capacitively-coupled radio-frequency discharges Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 34005. DOI: 10.1116/1.5133790 |
0.318 |
|
2019 |
Press AF, Goeckner MJ, Overzet LJ. Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma Journal of Vacuum Science & Technology B. 37: 062926. DOI: 10.1116/1.5132753 |
0.418 |
|
2018 |
Michaud R, Felix V, Stolz A, Aubry O, Lefaucheux P, Dzikowski S, Gathen VSd, Overzet LJ, Dussart R. Direct current microhollow cathode discharges on silicon devices operating in argon and helium Plasma Sources Science and Technology. 27: 25005. DOI: 10.1088/1361-6595/Aaa870 |
0.379 |
|
2017 |
Poulose J, Goeckner M, Shannon S, Coumou D, Overzet L. Driving frequency fluctuations in pulsed capacitively coupled plasmas The European Physical Journal D. 71. DOI: 10.1140/Epjd/E2017-80096-7 |
0.417 |
|
2016 |
Sundaram NG, Ramachandran S, Overzet L, Goeckner M, Lee GS. Study of layered diamond like carbon and PECVD fluorocarbon films for ultra low dielectric constant interlayer dielectric applications Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2016.97 |
0.595 |
|
2016 |
Felix V, Lefaucheux P, Aubry O, Golda J, Schulz-Von Der Gathen V, Overzet LJ, Dussart R. Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices Plasma Sources Science and Technology. 25. DOI: 10.1088/0963-0252/25/2/025021 |
0.37 |
|
2015 |
Sundaram N, Lee GS, Goeckner M, Overzet LJ. Study and optimization of PECVD films containing fluorine and carbon as ultra low dielectric constant interlayer dielectrics in ULSI devices Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922258 |
0.314 |
|
2015 |
Urrabazo D, Veyan JF, Goeckner MJ, Overzet LJ. Ion induced electron emission from chemically cleaned Si and Ge Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/40/405201 |
0.415 |
|
2015 |
Urrabazo D, Overzet LJ. The effects of the Fermi level on ion induced electron emission from chemically and sputter cleaned semiconductors Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/34/345203 |
0.431 |
|
2014 |
Bates RL, Goeckner MJ, Overzet LJ. Correction of aspect ratio dependent etch disparities Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4890004 |
0.404 |
|
2014 |
Bates RL, Stephan Thamban PL, Goeckner MJ, Overzet LJ. Silicon etch using SF6/C4F8/Ar gas mixtures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4880800 |
0.506 |
|
2013 |
Sundaram NG, Ramachandran S, Lee GS, Overzet L. Study and optimization of PECVD films containing fluorine and carbon layered with diamond like carbon films as ultra low dielectric constant interlayer dielectrics Materials Research Society Symposium Proceedings. 1511: 56-61. DOI: 10.1557/Opl.2013.37 |
0.595 |
|
2013 |
Saraf IR, Goeckner MJ, Goodlin BE, Kirmse KHR, Nelson CT, Overzet LJ. Kinetics of the deposition step in time multiplexed deep silicon etches Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4769873 |
0.804 |
|
2013 |
Kulsreshath MK, Sadeghi N, Schwaederle L, Dufour T, Overzet LJ, Lefaucheux P, Dussart R. Ignition and extinction phenomena in helium micro hollow cathode discharges Journal of Applied Physics. 114. DOI: 10.1063/1.4858418 |
0.34 |
|
2013 |
Jung D, Kim D, Lee KH, Overzet LJ, Lee GS. Transparent film heaters using multi-walled carbon nanotube sheets Sensors and Actuators, a: Physical. 199: 176-180. DOI: 10.1016/J.Sna.2013.05.024 |
0.32 |
|
2013 |
Jung D, Kim JH, Lee KH, Overzet LJ, Lee GS. Effects of pre-annealing of Fe catalysts on growth of spin-capable carbon nanotubes Diamond and Related Materials. 38: 87-92. DOI: 10.1016/J.Diamond.2013.06.021 |
0.303 |
|
2013 |
Wells GP, Estrada-Raygoza IC, Thamban PLS, Nelson CT, Chung CW, Overzet LJ, Goeckner MJ. Understanding the synthesis of ethylene glycol pulsed plasma discharges Plasma Processes and Polymers. 10: 119-135. DOI: 10.1002/Ppap.201200066 |
0.381 |
|
2012 |
Jung DW, Lee KH, Kim JH, Burk D, Overzet LJ, Lee GS, Kong SH. Optimizing control of Fe catalysts for carbon nanotube growth. Journal of Nanoscience and Nanotechnology. 12: 5663-8. PMID 22966629 DOI: 10.1166/Jnn.2012.6349 |
0.31 |
|
2012 |
Lee KH, Overzet LJ, Lee GS, Yang DJ, Lee BJ, Jang HS. Characterization of spin-capable multi-walled carbon nanotubes grown an a Fe catalyst film under helium gas Journal of the Korean Physical Society. 60: 1886-1890. DOI: 10.3938/Jkps.60.1886 |
0.344 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4746411 |
0.324 |
|
2012 |
Lee KH, Jung DW, Burk D, Overzet LJ, Lee GS. Effect of acetylene concentration and thermal ramping rate on the growth of spin-capable carbon nanotube forests Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4736985 |
0.305 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Role of surface temperature in fluorocarbon plasma-surface interactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4729445 |
0.391 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3679408 |
0.344 |
|
2012 |
Schwaederlé L, Kulsreshath MK, Overzet LJ, Lefaucheux P, Tillocher T, Dussart R. Breakdown study of dc silicon micro-discharge devices Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/6/065201 |
0.339 |
|
2012 |
Kulsreshath MK, Schwaederle L, Overzet LJ, Lefaucheux P, Ladroue J, Tillocher T, Aubry O, Woytasik M, Schelcher G, Dussart R. Study of dc micro-discharge arrays made in silicon using CMOS compatible technology Journal of Physics D: Applied Physics. 45. DOI: 10.1088/0022-3727/45/28/285202 |
0.358 |
|
2011 |
Ogawa D, Goeckner MJ, Overzet LJ. Optical observation of nitrogen propagation in argon plasma Ieee Transactions On Plasma Science. 39: 2544-2545. DOI: 10.1109/Tps.2011.2159625 |
0.57 |
|
2011 |
Saraf I, Goeckner M, Goodlin B, Kirmse K, Overzet L. Mask undercut in deep silicon etch Applied Physics Letters. 98: 161502. DOI: 10.1063/1.3579542 |
0.814 |
|
2011 |
Chae HY, Chung CW, Chung JW, Hong MP, Joo JH, Kim HJ, Kim DH, Kusano E, Overzet L, Pu YK, Setsuhara Y, Shi JJ, Terashima K, Watanabe T. The 10th Asia-Pacific conference on Plasma Science and Technology (APCPST 2010): The 153rd symposium on Plasma Science for Materials (SPSM 2010) Thin Solid Films. 519: 6637-6638. DOI: 10.1016/J.Tsf.2011.06.001 |
0.372 |
|
2010 |
Overzet LJ, Jung D, Mandra MA, Goeckner M, Dufour T, Dussart R, Lefaucheux P. RF impedance measurements of DC atmospheric micro-discharges European Physical Journal D. 60: 449-454. DOI: 10.1140/Epjd/E2010-00274-5 |
0.427 |
|
2010 |
Dussart R, Overzet LJ, Lefaucheux P, Dufour T, Kulsreshath M, Mandra MA, Tillocher T, Aubry O, Dozias S, Ranson P, Lee JB, Goeckner M. Integrated micro-plasmas in silicon operating in helium European Physical Journal D. 60: 601-608. DOI: 10.1140/Epjd/E2010-00272-7 |
0.349 |
|
2010 |
Ogawa D, Chung CW, Goeckner M, Overzet L. Transient effects caused by pulsed gas and liquid injections into low pressure plasmas Plasma Sources Science and Technology. 19. DOI: 10.1088/0963-0252/19/3/034013 |
0.613 |
|
2010 |
Jindal AK, Overzet L, Goeckner M. Time Resolved Microwave Interferometry Measurement of the Electron Density in a Pulsed 1,3-Butadiene Discharge Plasma Chemistry and Plasma Processing. 30: 287-297. DOI: 10.1007/S11090-010-9213-Z |
0.436 |
|
2009 |
Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Relationship between gas-phase chemistries and surface processes in fluorocarbon etch plasmas: A process rate model Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 631-642. DOI: 10.1116/1.3136850 |
0.818 |
|
2009 |
Ogawa D, Saraf I, Sra A, Timmons R, Goeckner M, Overzet L. The direct injection of liquid droplets into low pressure plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 342-351. DOI: 10.1116/1.3081965 |
0.797 |
|
2009 |
Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Chemistry in long residence time fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 193-208. DOI: 10.1116/1.3065678 |
0.769 |
|
2009 |
Goeckner M, Ogawa D, Saraf I, Overzet L. Progress report: Direct injection of liquids into low-pressure plasmas Journal of Physics: Conference Series. 162. DOI: 10.1088/1742-6596/162/1/012014 |
0.577 |
|
2009 |
Lee KH, Jang HS, Eom GY, Lee BJ, Burk D, Overzet L, Yang DJ, Lee GS. Corrigendum to "The enhanced growth of multi-walled carbon nanotubes using an atmospheric pressure plasma jet" [Materials Letters, 62, pp. 3849-3851, 2008] (DOI:10.1016/j.matlet.2008.04.083) Materials Letters. 63: 507. DOI: 10.1016/J.Matlet.2008.11.010 |
0.328 |
|
2008 |
Tao L, Ramachandran S, Nelson CT, Lin M, Overzet LJ, Goeckner M, Lee G, Willson CG, Wu W, Hu W. Durable diamond-like carbon templates for UV nanoimprint lithography. Nanotechnology. 19: 105302. PMID 21817695 DOI: 10.1088/0957-4484/19/10/105302 |
0.603 |
|
2008 |
Tillocher T, Dussart R, Overzet LJ, Mellhaoui X, Lefaucheux P, Boufnichel M, Ranson P. Two cryogenic processes involving S F6, O2, and Si F4 for silicon deep etching Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2826280 |
0.358 |
|
2008 |
Joseph EA, Zhou BS, Sant SP, Overzet LJ, Goeckner MJ. Role of chamber dimension in fluorocarbon based deposition and etching of Si O2 and its effects on gas and surface-phase chemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 545-554. DOI: 10.1116/1.2909963 |
0.835 |
|
2008 |
Goeckner MJ, Nelson CT, Overzet LJ. Electronegative plasma structure Ieee Transactions On Plasma Science. 36: 996-997. DOI: 10.1109/Tps.2008.922486 |
0.387 |
|
2008 |
Goeckner MJ, Nelson CT, Sant SP, Jindal AK, Joseph EA, Zhou BS, Padron-Wells G, Jarvis B, Pierce R, Overzet LJ. Plasma-surface interactions Journal of Physics: Conference Series. 133. DOI: 10.1088/1742-6596/133/1/012010 |
0.8 |
|
2008 |
Dufour T, Dussart R, Lefaucheux P, Ranson P, Overzet LJ, Mandra M, Lee JB, Goeckner M. Effect of limiting the cathode surface on direct current microhollow cathode discharge in helium Applied Physics Letters. 93. DOI: 10.1063/1.2966144 |
0.356 |
|
2008 |
Chandrashekar A, Ramachandran S, Pollack G, Lee JS, Lee GS, Overzet L. Forming carbon nanotube composites by directly coating forests with inorganic materials using low pressure chemical vapor deposition Thin Solid Films. 517: 525-530. DOI: 10.1016/J.Tsf.2008.06.064 |
0.711 |
|
2008 |
Lee KH, Jang HS, Eom GY, Lee BJ, Burk D, Overzet L, Lee GS. The enhanced growth of multi-walled carbon nanotubes using an atmospheric pressure plasma jet Materials Letters. 62: 3849-3851. DOI: 10.1016/J.Matlet.2008.04.083 |
0.364 |
|
2007 |
Tao L, Ramachandran S, Nelson CT, Overzet LJ, Goeckner MJ, Lee GS, Hu W. Nanofabrication of diamond-like carbon templates for nanoimprint lithography Materials Research Society Symposium Proceedings. 956: 243-248. DOI: 10.1557/Proc-0956-J13-04 |
0.622 |
|
2007 |
Joseph EA, Sant SP, Goeckner MJ, Overzet LJ, Peng HG, Gidley DW, Kastenmeier BEE. Effects of pore morphology on the diffusive properties of a porous low- κ dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1684-1693. DOI: 10.1116/1.2778694 |
0.779 |
|
2007 |
Nelson CT, Sant SP, Overzet LJ, Goeckner MJ. Surface kinetics with low ion energy bombardment in fluorocarbon plasmas Plasma Sources Science and Technology. 16: 813-821. DOI: 10.1088/0963-0252/16/4/017 |
0.818 |
|
2007 |
Liu Y, Overzet L, Goeckner M. Effect of substrate on the nucleation and growth of aluminum films deposited from methylpyrrolidine alane Thin Solid Films. 515: 6730-6736. DOI: 10.1016/J.Tsf.2007.02.006 |
0.532 |
|
2006 |
Ramachandran S, Tao L, Lee TH, Sant S, Overzet LJ, Goeckner MJ, Kim MJ, Lee GS, Hu W. Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2993-2997. DOI: 10.1116/1.2363409 |
0.803 |
|
2006 |
Chandrashekar A, Lee JS, Lee GS, Goeckner MJ, Overzet LJ. Gas-phase and sample characterizations of multiwall carbon nanotube growth using an atmospheric pressure plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1812-1817. DOI: 10.1116/1.2232493 |
0.701 |
|
2006 |
Tillocher T, Dussart R, Mellhaoui X, Lefaucheux P, Maaza NM, Ranson P, Boufnichel M, Overzet LJ. Oxidation threshold in silicon etching at cryogenic temperatures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1073-1082. DOI: 10.1116/1.2210946 |
0.443 |
|
2006 |
Jindal AK, Prengler AJ, Overzet LJ, Goeckner MJ. In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 126-132. DOI: 10.1116/1.2141618 |
0.319 |
|
2006 |
Zhou B, Joseph EA, Overzet LJ, Goeckner MJ. Spectroscopic study of gas and surface phase chemistries of CF 4 plasmas in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 114-125. DOI: 10.1116/1.2138718 |
0.718 |
|
2006 |
Chandrashekar A, Ramachandran S, Pollack GP, Lee JS, Lee GS, Overzet LJ. Filling of carbon nanotube forests grown by atmospheric pressure PECVD 2006 Ieee Nanotechnology Materials and Devices Conference, Nmdc. 1: 278-279. DOI: 10.1109/NMDC.2006.4388865 |
0.644 |
|
2006 |
Liu Y, Overzet LJ, Goeckner MJ. Chemical vapor deposition of aluminum from methylpyrrolidine alane complex Thin Solid Films. 510: 48-54. DOI: 10.1016/J.Tsf.2005.12.156 |
0.558 |
|
2005 |
Zhou B, Joseph EA, Sant SP, Liu Y, Radhakrishnan A, Overzet LJ, Goeckner MJ. Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1657-1667. DOI: 10.1116/1.2049309 |
0.815 |
|
2005 |
Lee JS, Chandrashekar A, Park BM, Overzet LJ, Lee GS. Effects of oxygen plasma on optical and electrical characteristics of multiwall carbon nanotubes grown on a four-probe patterned Fe layer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1013-1017. DOI: 10.1116/1.1924582 |
0.676 |
|
2005 |
Goeckner MJ, Earle GD, Overzet LJ, Maynard JC. Electron confinement on magnetic field lines Ieee Transactions On Plasma Science. 33: 436-437. DOI: 10.1109/Tps.2005.844960 |
0.322 |
|
2005 |
Mellhaoui X, Dussart R, Tillocher T, Lefaucheux P, Ranson P, Boufnichel M, Overzet LJ. SiO xF y passivation layer in silicon cryoetching Journal of Applied Physics. 98. DOI: 10.1063/1.2133896 |
0.312 |
|
2004 |
Joseph EA, Zhou B, Sant SP, Overzet LJ, Goeckner MJ. Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 689-697. DOI: 10.1116/1.1722614 |
0.794 |
|
2004 |
Khater MH, Overzet LJ. Chlorine plasma and polysilicon etch characterization in an inductively coupled plasma etch reactor Plasma Sources Science and Technology. 13: 466-483. DOI: 10.1088/0963-0252/13/3/014 |
0.801 |
|
2003 |
Srinivasan S, Marquis J, Pratti L, Khater MH, Goeckner MJ, Overzet LJ. The effects on plasma properties of a current node on inductively coupled plasma sources Plasma Sources Science and Technology. 12: 432-442. DOI: 10.1088/0963-0252/12/3/319 |
0.766 |
|
2003 |
Joseph EA, Goeckner MJ, Overzet LJ, Gidley DW, Kastenmeier BEE. Correlation of pore structure to integration issues for LOW-κ interconnects Advanced Metallization Conference (Amc). 537-541. |
0.629 |
|
2002 |
Fang Z, Koo BW, Felch S, Lei Y, Overzet LJ, Goeckner M. Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzer Proceedings of the International Conference On Ion Implantation Technology. 22: 403-406. DOI: 10.1109/IIT.2002.1258025 |
0.431 |
|
2001 |
Khater MH, Overzet LJ. Stabilizing inductively coupled plasma source impedance and plasma uniformity using a Faraday shield Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 785-792. DOI: 10.1116/1.1355763 |
0.758 |
|
2001 |
Kanakasabapathy SK, Khater MH, Overzet LJ. Comparison of negative-ion and positive-ion-assisted etching of silicon Applied Physics Letters. 79: 1769-1771. DOI: 10.1063/1.1400765 |
0.791 |
|
2001 |
Kanakasabapathy SK, Overzet LJ, Midha V, Economou D. Alternating fluxes of positive and negative ions from an ion-ion plasma Applied Physics Letters. 78: 22-24. DOI: 10.1063/1.1338500 |
0.815 |
|
2001 |
Kanakasabapathy SK, Overzet LJ, Cheung KP, Malyshev MV. Plasma-induced charging reduction through ion-ion synchronous bias International Symposium On Plasma Process-Induced Damage, P2id, Proceedings. 64-67. |
0.808 |
|
2000 |
Khater MH, Overzet LJ. New inductively coupled plasma source design with improved azimuthal symmetry control Plasma Sources Science and Technology. 9: 545-561. DOI: 10.1088/0963-0252/9/4/310 |
0.769 |
|
1999 |
Kleber JL, Overzet LJ. Sheath resistance measurements in the GEC reference reactor Plasma Sources Science and Technology. 8: 534-543. DOI: 10.1088/0963-0252/8/4/303 |
0.783 |
|
1999 |
Smith BA, Overzet LJ. Observation of the ion-ion transition in an SF6 discharge using a fast floating double probe Plasma Sources Science and Technology. 8: 70-78. DOI: 10.1088/0963-0252/8/1/009 |
0.381 |
|
1998 |
Khater MH, Overzet LJ, Cherrington BE. Effects of gas distribution on polysilicon etch rate uniformity for a low pressure, high density plasma Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 490-495. DOI: 10.1116/1.589852 |
0.773 |
|
1998 |
Overzet LJ, Kleber J. Effect of metastable atom reactions on the electron energy probability functions in afterglows Plasma Sources Science and Technology. 7: 512-523. DOI: 10.1088/0963-0252/7/4/009 |
0.777 |
|
1998 |
Kanakasabapathy SK, Overzet LJ. A coupled two-sheath simulation of RF bias at high electronegativities Plasma Sources Science and Technology. 7: 289-297. DOI: 10.1088/0963-0252/7/3/007 |
0.806 |
|
1998 |
Smith BA, Overzet LJ. Improvements to the floating double probe for time-resolved measurements in pulsed rf plasmas Review of Scientific Instruments. 69: 1372-1377. |
0.351 |
|
1997 |
Overzet LJ, Smith BA, Kleber J, Kanakasabapathy SK. Negative ion extraction from pulsed discharges Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 36: 2443-2449. |
0.813 |
|
1997 |
Smith BA, Overzet LJ. Ion energy control in an insulating inductively coupled discharge reactor Applied Physics Letters. 70: 1950-1952. |
0.401 |
|
1995 |
Overzet LJ. Microwave Diagnostic Results from the Gaseous Electronics Conference RF Reference Cell. Journal of Research of the National Institute of Standards and Technology. 100: 401-414. PMID 29151750 DOI: 10.6028/Jres.100.030 |
0.368 |
|
1995 |
Smith BA, Overzet LJ. Time-resolved energy distribution of F- from pulsed radio frequency discharges Journal of Applied Physics. 78: 5195-5197. DOI: 10.1063/1.360682 |
0.417 |
|
1993 |
Lin Y, Overzet LJ. Negative and positive ions from CF4 and CF4/O 2 rf discharges in etching Si Applied Physics Letters. 62: 675-677. DOI: 10.1063/1.108836 |
0.417 |
|
1993 |
Lin Y, Overzet LJ. Negative and positive loans from CF4 and CF4/O2 RF discharges in etching silicon Proceedings, Annual Technical Conference - Society of Vacuum Coaters. 343-347. |
0.311 |
|
1990 |
Verdeyen JT, Beberman J, Overzet L. Modulated discharges: Effect on plasma parameters and deposition Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 8: 1851-1856. DOI: 10.1116/1.576815 |
0.327 |
|
1989 |
Overzet LJ, Beberman JH, Verdeyen JT. Enhancement of the negative ion flux to surfaces from radio-frequency processing discharges Journal of Applied Physics. 66: 1622-1631. DOI: 10.1063/1.344376 |
0.355 |
|
1986 |
Overzet LJ, Verdeyen JT. Enhancement of the plasma density and deposition rate in rf discharges Applied Physics Letters. 48: 695-697. DOI: 10.1063/1.96746 |
0.357 |
|
1986 |
Fledderman CB, Beberman JH, Hebner G, Overzet LJ, Verdeyen JT. MEASUREMENT OF THE ELECTRON DENSITY AND THE ATTACHMENT RATE COEFFICIENT IN SILANE/HELIUM DISCHARGES Technical Report Afwal-Tr - Air Force Wright Aeronautical Laboratories (United States). |
0.33 |
|
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