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Cheng Gong, Ph.D. - Publications

Affiliations: 
2013 Materials Science and Engineering University of Texas at Dallas, Richardson, TX, United States 
Area:
Materials Science Engineering, Nanoscience, Nanotechnology, Inorganic Chemistry
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Gong C, Kim EM, Wang Y, Lee G, Zhang X. Multiferroicity in atomic van der Waals heterostructures. Nature Communications. 10: 2657. PMID 31201316 DOI: 10.1038/S41467-019-10693-0  0.332
2018 Gong SJ, Gong C, Sun YY, Tong WY, Duan CG, Chu JH, Zhang X. Electrically induced 2D half-metallic antiferromagnets and spin field effect transistors. Proceedings of the National Academy of Sciences of the United States of America. PMID 30076226 DOI: 10.1073/Pnas.1715465115  0.371
2017 Dong H, Gong C, Addou R, McDonnell S, Azcatl A, Qin X, Wang W, Wang WH, Hinkle CL, Wallace RM. Schottky barrier height of Pd/MoS2 contact by large area photoemission spectroscopy. Acs Applied Materials & Interfaces. PMID 29035026 DOI: 10.1021/Acsami.7B10974  0.403
2017 Wang WH, Gong C, Wang W, Kong F, Kim H, Fullerton-Shirey SK, Seabaugh A, Cho K. Energetics of metal ion adsorption on and diffusion through crown ethers: First principles study on two-dimensional electrolyte Solid State Ionics. 301: 176-181. DOI: 10.1016/J.Ssi.2017.01.029  0.448
2015 Wang W, Gong C, Xiong K, Santosh KC, Wallace RM, Cho K. Materials Design on the Origin of Gap States in a High-κ/GaAs Interface Engineering. 1: 372-377. DOI: 10.15302/J-Eng-2015052  0.485
2015 Gong C, Zhang H, Wang W, Colombo L, Wallace RM, Cho K. Erratum: “Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors” [Appl. Phys. Lett. 103, 053513 (2013)] Applied Physics Letters. 107: 139904. DOI: 10.1063/1.4932088  0.61
2015 Wang WH, Gong C, Wang W, Fullerton-Shirey SK, Seabaugh A, Cho K. First-Principles Study of Crown Ether and Crown Ether-Li Complex Interactions with Graphene Journal of Physical Chemistry C. 119: 20016-20022. DOI: 10.1021/Acs.Jpcc.5B07049  0.542
2014 McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM. Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72. PMID 24797712 DOI: 10.1021/Nn501728W  0.542
2014 Gong C, Colombo L, Wallace RM, Cho K. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Nano Letters. 14: 1714-20. PMID 24660782 DOI: 10.1021/Nl403465V  0.549
2014 Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM. Realistic metal-graphene contact structures. Acs Nano. 8: 642-9. PMID 24261695 DOI: 10.1021/Nn405249N  0.584
2014 Gong C, Kim S, Zhou S, Hu Y, Acik M, De Heer W, Berger C, Bongiorno A, Riedo E, Chabal Y. Chemical bonding and stability of multilayer graphene oxide layers Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045554  0.402
2014 Ma B, Gong C, Wen Y, Chen R, Cho K, Shan B. Modulation of contact resistance between metal and graphene by controlling the graphene edge, contact area, and point defects: An ab initio study Journal of Applied Physics. 115: 183708. DOI: 10.1063/1.4876738  0.586
2014 Gong C, McDonnell S, Qin X, Azcatl A, Dong H, Chabal YJ, Cho K, Wallace RM. Realistic metal-graphene contact structures Acs Nano. 8: 642-649. DOI: 10.1021/nn405249n  0.348
2014 Zhang H, Lee G, Gong C, Colombo L, Cho K. Grain Boundary Effect on Electrical Transport Properties of Graphene The Journal of Physical Chemistry C. 118: 2338-2343. DOI: 10.1021/Jp411464W  0.575
2014 Zhou S, Kim S, Di Gennaro E, Hu Y, Gong C, Lu X, Berger C, de Heer W, Riedo E, Chabal YJ, Aruta C, Bongiorno A. Microspotting: Film Structure of Epitaxial Graphene Oxide on SiC: Insight on the Relationship Between Interlayer Spacing, Water Content, and Intralayer Structure (Adv. Mater. Interfaces 3/2014) Advanced Materials Interfaces. 1: n/a-n/a. DOI: 10.1002/Admi.201470019  0.345
2014 Zhou S, Kim S, Di Gennaro E, Hu Y, Gong C, Lu X, Berger C, De Heer W, Riedo E, Chabal YJ, Aruta C, Bongiorno A. Film Structure of Epitaxial Graphene Oxide on SiC: Insight on the Relationship between Interlayer Spacing, Water Content, and Intralayer Structure Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201300106  0.364
2013 Gong C, Huang C, Miller J, Cheng L, Hao Y, Cobden D, Kim J, Ruoff RS, Wallace RM, Cho K, Xu X, Chabal YJ. Metal contacts on physical vapor deposited monolayer MoS2. Acs Nano. 7: 11350-7. PMID 24219632 DOI: 10.1021/Nn4052138  0.581
2013 Mao R, Kong BD, Gong C, Xu S, Jayasekera T, Cho K, Kim KW. First-principles calculation of thermal transport in metal/graphene systems Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.165410  0.534
2013 Gong C, Zhang H, Wang W, Colombo L, Wallace RM, Cho K. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors Applied Physics Letters. 103. DOI: 10.1063/1.4817409  0.621
2013 Gong C, Floresca HC, Hinojos D, McDonnell S, Qin X, Hao Y, Jandhyala S, Mordi G, Kim J, Colombo L, Ruoff RS, Kim MJ, Cho K, Wallace RM, Chabal YJ. Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide Journal of Physical Chemistry C. 117: 23000-23008. DOI: 10.1021/Jp408429V  0.488
2012 Gong C, Hinojos D, Wang W, Nijem N, Shan B, Wallace RM, Cho K, Chabal YJ. Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control. Acs Nano. 6: 5381-7. PMID 22540140 DOI: 10.1021/Nn301241P  0.598
2012 Gong C, Colombo L, Cho K. Photon-Assisted CVD Growth of Graphene Using Metal Adatoms As Catalysts Journal of Physical Chemistry C. 116: 18263-18269. DOI: 10.1021/Jp305268N  0.552
2012 Gong C, Acik M, Abolfath RM, Chabal Y, Cho K. Graphitization of graphene oxide with ethanol during thermal reduction Journal of Physical Chemistry C. 116: 9969-9979. DOI: 10.1021/Jp212584T  0.48
2011 Yamaguchi H, Murakami K, Eda G, Fujita T, Guan P, Wang W, Gong C, Boisse J, Miller S, Acik M, Cho K, Chabal YJ, Chen M, Wakaya F, Takai M, et al. Field emission from atomically thin edges of reduced graphene oxide. Acs Nano. 5: 4945-52. PMID 21618992 DOI: 10.1021/Nn201043A  0.485
2011 Gong SJ, Li ZY, Yang ZQ, Gong C, Duan C, Chu JH. Spintronic properties of graphene films grown on Ni(111) substrate Journal of Applied Physics. 110: 43704. DOI: 10.1063/1.3622618  0.425
2011 Wang W, Gong C, Shan B, Wallace RM, Cho K. Sulfur passivation effect on HfO2 /GaAs interface: A first-principles study Applied Physics Letters. 98. DOI: 10.1063/1.3597219  0.493
2011 Wang W, Xiong K, Gong C, Wallace RM, Cho K. Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study Journal of Applied Physics. 109: 63704. DOI: 10.1063/1.3554689  0.471
2010 Acik M, Mattevi C, Gong C, Lee G, Cho K, Chhowalla M, Chabal YJ. The role of intercalated water in multilayered graphene oxide. Acs Nano. 4: 5861-8. PMID 20886867 DOI: 10.1021/Nn101844T  0.501
2010 Cho K, Gong C, Lee G, Wang W, Shan B, Vogel EM, Wallace RM. First-principles and quantum transport studies of metal-graphene end contacts Mrs Proceedings. 1259. DOI: 10.1557/Proc-1259-S14-35  0.576
2010 Gong C, Lee G, Shan B, Vogel EM, Wallace RM, Cho K. First-principles study of metal–graphene interfaces Journal of Applied Physics. 108: 123711. DOI: 10.1063/1.3524232  0.597
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