Year |
Citation |
Score |
2005 |
Suh Y, Lazar H, Chen B, Lee J, Misra V. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes Journal of the Electrochemical Society. 152: F138. DOI: 10.1149/1.1992467 |
0.622 |
|
2005 |
Chen B, Suh Y, Lee J, Gurganus J, Misra V, Cabral C. Physical and electrical analysis of RuxYy alloys for gate electrode applications Applied Physics Letters. 86: 053502. DOI: 10.1063/1.1857093 |
0.666 |
|
2004 |
Suh Y, Heuss G, Misra V. Characteristics of TaSi[sub x]N[sub y] thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 175. DOI: 10.1116/1.1640398 |
0.621 |
|
2004 |
Suh Y, Park D, Jang S. Investigation of stress behaviors and mechanism of void formation in sputtered TiSix films Thin Solid Films. 450: 341-345. DOI: 10.1016/J.Tsf.2003.11.165 |
0.38 |
|
2003 |
Suh Y, Heuss GP, Misra V, Park D, Lim K. Thermal Stability of TaSi[sub x]N[sub y] Films Deposited by Reactive Sputtering on SiO[sub 2] Journal of the Electrochemical Society. 150: F79. DOI: 10.1149/1.1562599 |
0.56 |
|
2003 |
Suh Y, Heuss GP, Lee J, Misra V. Effect of the composition on the electrical properties of TaSi/sub x/N y metal gate electrodes Ieee Electron Device Letters. 24: 439-441. DOI: 10.1109/Led.2003.814009 |
0.626 |
|
2002 |
Suh Y, Heuss G, Lee J, Misra V. The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors Mrs Proceedings. 716. DOI: 10.1557/Proc-716-B8.6 |
0.63 |
|
2002 |
Suh Y, Heuss GP, Misra V. Electrical characteristics of TaSixNy/SiO2/Si structures by Fowler–Nordheim current analysis Applied Physics Letters. 80: 1403-1405. DOI: 10.1063/1.1453478 |
0.626 |
|
2001 |
Zhong H, Heuss G, Suh Y, Hong S, Misra V, Kelly J, Parsons G. Promising Gate Stacks with Ru & RuO2 Gate Electrodes and Y-silicate Dielectrics Mrs Proceedings. 670. DOI: 10.1557/Proc-670-K3.1 |
0.71 |
|
2001 |
Kim S, Hwang I, Rhee J, Suh Y, Park D. Effects of the Process Variable on Sputtered TiSi x Polycide Gate Electrodes for sub-0.15 μm Memory Device Application Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1360209 |
0.486 |
|
2001 |
Zhong H, Heuss G, Suh Y, Misra V, Hong S. Electrical properties of Ru and RuO2 gate electrodes for Si-PMOSFET with ZrO2 and Zr-silicate dielectrics Journal of Electronic Materials. 30: 1493-1498. DOI: 10.1007/S11664-001-0164-2 |
0.725 |
|
2000 |
Suh Y, Park D, Jang S, Lee S, Kim T, Yeo I, Kim S, Kim C. Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films Journal of Applied Physics. 87: 2760-2764. DOI: 10.1063/1.372252 |
0.464 |
|
1999 |
Park D, Suh Y, Lee S, Kim S, Kim C. Thermal Stability of Sputter‐Deposited TiSi2 Films with Crystal Orientation Electrochemical and Solid State Letters. 2: 642-644. DOI: 10.1149/1.1390934 |
0.323 |
|
Show low-probability matches. |