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Nuo Xu, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering & Computer Sciences University of California, Berkeley, Berkeley, CA, United States 
Area:
Nanofabrication
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35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Long Y, Huang JZ, Huang Q, Xu N, Jiang X, Niu Z, Huang R, Li S. Piezoelectric Tunnel FET With a Steep Slope Ieee Electron Device Letters. 41: 948-951. DOI: 10.1109/Led.2020.2988412  0.374
2020 Luo S, Xu N, Wang Y, Hong J, You L. Thermally Assisted Skyrmion Memory (TA-SKM) Ieee Electron Device Letters. 41: 932-935. DOI: 10.1109/Led.2020.2986312  0.314
2019 Long Y, Huang JZ, Huang Q, Xu N, Jiang X, Niu Z, Esseni D, Huang R, Li S. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering Ieee Transactions On Electron Devices. 66: 4982-4988. DOI: 10.1109/Ted.2019.2940687  0.334
2019 Zhou J, Han G, Xu N, Li J, Peng Y, Liu Y, Zhang J, Sun Q, Zhang DW, Hao Y. Experimental Validation of Depolarization Field Produced Voltage Gains in Negative Capacitance Field-Effect Transistors Ieee Transactions On Electron Devices. 66: 4419-4424. DOI: 10.1109/Ted.2019.2931402  0.343
2019 Peng Y, Xu N, Liu TK, Hao Y, Xiao W, Han G, Liu Y, Wu J, Wang K, He Y, Yu Z, Wang X. Nanocrystal-Embedded-Insulator (NEI) Ferroelectric Field-Effect Transistor Featuring Low Operating Voltages and Improved Synaptic Behavior Ieee Electron Device Letters. 40: 1933-1936. DOI: 10.1109/Led.2019.2947086  0.322
2019 Liu H, Wang C, Han G, Li J, Peng Y, Liu Y, Wang X, Zhong N, Duan C, Wang X, Xu N, Liu TK, Hao Y. ZrO2 Ferroelectric FET for Non-volatile Memory Application Ieee Electron Device Letters. 40: 1419-1422. DOI: 10.1109/Led.2019.2930458  0.319
2019 Luo S, Xu N, Guo Z, Zhang Y, Hong J, You L. Voltage-Controlled Skyrmion Memristor for Energy-Efficient Synapse Applications Ieee Electron Device Letters. 40: 635-638. DOI: 10.1109/Led.2019.2898275  0.35
2019 Zhou J, Han G, Xu N, Li J, Peng Y, Liu Y, Zhang J, Sun Q, Zhang DW, Hao Y. Incomplete Dipoles Flipping Produced Near Hysteresis-Free Negative Capacitance Transistors Ieee Electron Device Letters. 40: 329-332. DOI: 10.1109/Led.2018.2886426  0.365
2019 Peng Y, Xiao W, Han G, Wu J, Liu H, Liu Y, Xu N, Liu TK, Hao Y. Nanocrystal-Embedded-Insulator Ferroelectric Negative Capacitance FETs With Sub-kT/q Swing Ieee Electron Device Letters. 40: 9-12. DOI: 10.1109/Led.2018.2881839  0.34
2018 Luo S, Song M, Li X, Zhang Y, Hong J, Yang X, Zou X, Xu N, You L. Reconfigurable Skyrmion Logic Gates. Nano Letters. PMID 29350935 DOI: 10.1021/Acs.Nanolett.7B04722  0.343
2018 Li X, Song M, Xu N, Luo S, Zou Q, Zhang S, Hong J, Yang X, Min T, Han X, Zou X, Zhu J, Salahuddin S, You L. Novel Cascadable Magnetic Majority Gates for Implementing Comprehensive Logic Functions Ieee Transactions On Electron Devices. 65: 4687-4693. DOI: 10.1109/Ted.2018.2866621  0.33
2018 Wang H, Jiang X, Xu N, Han G, Hao Y, Li S, Esseni D. Revised Analysis of Design Options and Minimum Subthreshold Swing in Piezoelectric FinFETs Ieee Electron Device Letters. 39: 444-447. DOI: 10.1109/Led.2018.2791987  0.353
2018 Hong J, Stone M, Navarrete B, Luongo K, Zheng Q, Yuan Z, Xia K, Xu N, Bokor J, You L, Khizroev S. 3D multilevel spin transfer torque devices Applied Physics Letters. 112: 112402. DOI: 10.1063/1.5021336  0.302
2015 Jiang H, Liu X, Xu N, He Y, Du G, Zhang X. Investigation of Self-Heating Effect on Hot Carrier Degradation in Multiple-Fin SOI FinFETs Ieee Electron Device Letters. 36: 1258-1260. DOI: 10.1109/Led.2015.2487045  0.316
2015 Qian C, Peschot A, Chen IR, Chen Y, Xu N, Liu TJK. Effect of Body Biasing on the Energy-Delay Performance of Logic Relays Ieee Electron Device Letters. 36: 862-864. DOI: 10.1109/Led.2015.2441116  0.576
2015 Xu N, Takeuchi H, Hytha M, Cody NW, Stephenson RJ, Kwak B, Cha SY, Mears RJ, King Liu TJ. Electron mobility enhancement in (100) oxygen-inserted silicon channel Applied Physics Letters. 107. DOI: 10.1063/1.4931431  0.682
2014 Xu N, Takeuchi H, Damrongplasit N, Stephenson RJ, Huang X, Cody NW, Hytha M, Mears RJ, Liu TJK. Extension of planar bulk n-channel MOSFET scaling with oxygen insertion technology Ieee Transactions On Electron Devices. 61: 3345-3349. DOI: 10.1109/Ted.2014.2342496  0.369
2014 Fujiki J, Xu N, Hutin L, Chen I, Qian C, Liu TK. Microelectromechanical Relay and Logic Circuit Design for Zero Crowbar Current Ieee Transactions On Electron Devices. 61: 3296-3302. DOI: 10.1109/Ted.2014.2336855  0.542
2014 Jiang H, Xu N, Chen B, Zeng L, He Y, Du G, Liu X, Zhang X. Experimental investigation of self heating effect (SHE) in multiple-fin SOI FinFETs Semiconductor Science and Technology. 29: 115021. DOI: 10.1088/0268-1242/29/11/115021  0.383
2013 Damrongplasit N, Xu N, Takeuchi H, Stephenson RJ, Cody NW, Yiptong A, Huang X, Hytha M, Mears RJ, Liu TK. Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield Ieee Transactions On Electron Devices. 60: 1790-1793. DOI: 10.1109/Ted.2013.2253105  0.451
2013 Ho B, Xu N, Wood B, Tran V, Chopra S, Kim Y, Nguyen B, Bonnin O, Mazure C, Kuppurao S, Chang C, Liu TK. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence Ieee Transactions On Electron Devices. 60: 153-158. DOI: 10.1109/Ted.2012.2230175  0.603
2012 Ho B, Sun X, Xu N, Sako T, Maekawa K, Tomoyasu M, Akasaka Y, Bonnin O, Nguyen B, Liu TK. First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability Ieee Transactions On Electron Devices. 59: 2273-2276. DOI: 10.1109/Ted.2012.2201721  0.642
2012 Xu N, Ho B, Choi M, Moroz V, Liu TJK. Effectiveness of stressors in aggressively scaled FinFETs Ieee Transactions On Electron Devices. 59: 1592-1598. DOI: 10.1109/Ted.2012.2189861  0.599
2012 Ho B, Xu N, Liu TK. pMOSFET Performance Enhancement With Strained Channels Ieee Transactions On Electron Devices. 59: 1468-1474. DOI: 10.1109/Ted.2012.2186576  0.581
2012 Xu N, Ho B, Andrieu F, Smith L, Nguyen B, Weber O, Poiroux T, Faynot O, Liu TK. Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs Ieee Electron Device Letters. 33: 318-320. DOI: 10.1109/Led.2011.2179113  0.583
2011 Ho B, Xu N, Liu TK. Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain Tunneling Ieee Transactions On Electron Devices. 58: 2895-2902. DOI: 10.1109/Ted.2011.2159008  0.631
2011 Xu N, Wang LTN, Neureuther AR, Liu TJK. Physically based modeling of stress-induced variation in nanoscale transistor performance Ieee Transactions On Device and Materials Reliability. 11: 378-386. DOI: 10.1109/Tdmr.2011.2144598  0.358
2010 Wang LTN, Xu N, Liu TJK, Neureuther AR. 45nm-generation parameter-specific ring oscillator monitors Proceedings of Spie - the International Society For Optical Engineering. 7641. DOI: 10.1117/12.846719  0.358
2009 Sun B, Liu L, Xu N, Gao B, Wang Y, Han D, Liu X, Han R, Kang J. The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device Japanese Journal of Applied Physics. 48. DOI: 10.1143/Jjap.48.04C061  0.329
2009 Sun X, Sun B, Liu L, Xu N, Liu X, Han R, Kang J, Xiong G, Ma TP. Resistive Switching in $\hbox{CeO}_{x}$ Films for Nonvolatile Memory Application Ieee Electron Device Letters. 30: 334-336. DOI: 10.1109/Led.2009.2014256  0.303
2008 Sun B, Liu LF, Xu N, Gao B, Wang Y, Han DD, Liu XY, Han RQ, Kang JF. The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO 2 /Pt Memory Device The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.J-9-6  0.317
2008 Liu L, Kang J, Xu N, Sun X, Chen C, Sun B, Wang Y, Liu X, Zhang X, Han R. Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices Japanese Journal of Applied Physics. 47: 2701-2703. DOI: 10.1143/Jjap.47.2701  0.302
2008 Xu N, Liu LF, Sun X, Chen C, Wang Y, Han DD, Liu XY, Han RQ, Kang JF, Yu B. Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention Semiconductor Science and Technology. 23: 075019. DOI: 10.1088/0268-1242/23/7/075019  0.302
2008 Xu N, Liu L, Sun X, Liu X, Han D, Wang Y, Han R, Kang J, Yu B. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories Applied Physics Letters. 92: 232112. DOI: 10.1063/1.2945278  0.312
2007 Liu LF, Kang JF, Tang H, Xu N, Wang Y, Liu XY, Zhang X, Han RQ. Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices The Japan Society of Applied Physics. 2007: 836-837. DOI: 10.7567/Ssdm.2007.J-6-3  0.3
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