| Year |
Citation |
Score |
| 2023 |
Kumar R, Ciobanu CV, Rathi SJ, Brom JE, Redwing JM, Hunte F. Magnetotransport Signatures of Superconducting Cooper Pairs Carried by Topological Surface States in Bismuth Selenide. Nano Letters. 23: 10267-10273. PMID 37956090 DOI: 10.1021/acs.nanolett.3c02795 |
0.782 |
|
| 2022 |
Kim M, Giteau M, Ahsan N, Miyashita N, Thirumalaisamy L, Chen C, Redwing JM, Okada Y. Co-deposition of MoSfilms by reactive sputtering and formation of tree-like structures. Nanotechnology. PMID 35584615 DOI: 10.1088/1361-6528/ac70e3 |
0.342 |
|
| 2021 |
Bansal A, Hilse M, Huet B, Wang K, Kozhakhmetov A, Kim JH, Bachu S, Alem N, Collazo R, Robinson JA, Engel-Herbert R, Redwing JM. Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. Acs Applied Materials & Interfaces. PMID 34748305 DOI: 10.1021/acsami.1c14591 |
0.376 |
|
| 2021 |
Li J, Wang J, Zhang X, Elias C, Ye G, Evans D, Eda G, Redwing JM, Cassabois G, Gil B, Valvin P, He R, Liu B, Edgar JH. Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. Acs Nano. PMID 33818058 DOI: 10.1021/acsnano.1c00115 |
0.48 |
|
| 2021 |
Sebastian A, Pendurthi R, Choudhury TH, Redwing JM, Das S. Benchmarking monolayer MoS and WS field-effect transistors. Nature Communications. 12: 693. PMID 33514710 DOI: 10.1038/s41467-020-20732-w |
0.311 |
|
| 2020 |
Qian Q, Peng L, Perea-Lopez N, Fujisawa K, Zhang K, Zhang X, Choudhury TH, Redwing JM, Terrones M, Ma X, Huang S. Defect creation in WSe with a microsecond photoluminescence lifetime by focused ion beam irradiation. Nanoscale. PMID 31912844 DOI: 10.1039/C9Nr08390A |
0.553 |
|
| 2020 |
Fox JJ, Zhang X, Balushi ZYA, Chubarov M, Kozhakhmetov A, Redwing JM. Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films Journal of Materials Research. 35: 1386-1396. DOI: 10.1557/Jmr.2020.19 |
0.543 |
|
| 2020 |
Choudhury TH, Zhang X, Al Balushi ZY, Chubarov M, Redwing JM. Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides Annual Review of Materials Research. 50: 155-177. DOI: 10.1146/Annurev-Matsci-090519-113456 |
0.608 |
|
| 2020 |
Xiong K, Zhang X, Li L, Zhang F, Davis B, Madjar A, Goritz A, Wietstruck M, Kaynak M, Strandwitz NC, Terrones M, Redwing JM, Hwang JCM. Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs Ieee Electron Device Letters. 41: 1134-1137. DOI: 10.1109/Led.2020.2999906 |
0.537 |
|
| 2020 |
Chatterjee B, Lundh JS, Song Y, Shoemaker D, Baca AG, Kaplar RJ, Beechem TE, Saltonstall C, Allerman AA, Armstrong AM, Klein BA, Bansal A, Seyf HR, Talreja D, Pogrebnyakov A, ... ... Redwing JM, et al. Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs Ieee Electron Device Letters. 41: 461-464. DOI: 10.1109/Led.2020.2969515 |
0.301 |
|
| 2020 |
Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, et al. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials. 32: 5066-5072. DOI: 10.1021/Acs.Chemmater.0C00830 |
0.546 |
|
| 2020 |
Zhang X, Lee S, Bansal A, Zhang F, Terrones M, Jackson TN, Redwing JM. Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition Journal of Crystal Growth. 533: 125471. DOI: 10.1016/J.Jcrysgro.2019.125471 |
0.616 |
|
| 2020 |
Huet B, Raskin J, Snyder DW, Redwing JM. Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology Carbon. 163: 95-104. DOI: 10.1016/J.Carbon.2020.02.074 |
0.301 |
|
| 2019 |
Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Room-Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects. Advanced Materials (Deerfield Beach, Fla.). e1904132. PMID 31621963 DOI: 10.1002/Adma.201904132 |
0.479 |
|
| 2019 |
Zhang X, Zhang F, Wang Y, Schulman DS, Zhang T, Bansal A, Alem N, Das S, Crespi VH, Terrones M, Redwing JM. Defect-Controlled Nucleation and Orientation of WSe on hBN - A Route to Single Crystal Epitaxial Monolayers. Acs Nano. PMID 30758945 DOI: 10.1021/Acsnano.8B09230 |
0.613 |
|
| 2019 |
Lundh JS, Chatterjee B, Song Y, Baca AG, Kaplar RJ, Beechem TE, Allerman AA, Armstrong AM, Klein BA, Bansal A, Talreja D, Pogrebnyakov A, Heller E, Gopalan V, Redwing JM, et al. Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor Applied Physics Letters. 115: 153503. DOI: 10.1063/1.5115013 |
0.313 |
|
| 2019 |
Wu W, Dass CK, Hendrickson JR, Montaño RD, Fischer RE, Zhang X, Choudhury TH, Redwing JM, Wang Y, Pettes MT. Locally defined quantum emission from epitaxial few-layer tungsten diselenide Applied Physics Letters. 114: 213102. DOI: 10.1063/1.5091779 |
0.585 |
|
| 2019 |
Bansal A, Wang K, Lundh JS, Choi S, Redwing JM. Effect of Ge doping on growth stress and conductivity in AlxGa1-xN Applied Physics Letters. 114: 142101. DOI: 10.1063/1.5080680 |
0.528 |
|
| 2019 |
Xuan Y, Jain A, Zafar S, Lotfi R, Nayir N, Wang Y, Choudhury TH, Wright S, Feraca J, Rosenbaum L, Redwing JM, Crespi V, van Duin AC. Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2 Journal of Crystal Growth. 527: 125247. DOI: 10.1016/J.Jcrysgro.2019.125247 |
0.389 |
|
| 2019 |
Walter TN, Lee S, Zhang X, Chubarov M, Redwing JM, Jackson TN, Mohney SE. Atomic layer deposition of ZnO on MoS2 and WSe2 Applied Surface Science. 480: 43-51. DOI: 10.1016/J.Apsusc.2019.02.182 |
0.619 |
|
| 2019 |
Bansal A, Martin NC, Wang K, Redwing JM. GaN Heteroepitaxy on Strain-Engineered (111) Si/Si 1-x Ge x Journal of Electronic Materials. 48: 3355-3362. DOI: 10.1007/S11664-019-07031-X |
0.497 |
|
| 2019 |
Wu Z, Li J, Zhang X, Redwing JM, Zheng Y. Chiral Metamaterials: Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects (Adv. Mater. 49/2019) Advanced Materials. 31: 1970347. DOI: 10.1002/Adma.201970347 |
0.437 |
|
| 2018 |
Zhang K, Bersch BM, Zhang F, Briggs N, Subramanian S, Xu K, Chubarov M, Wang K, Lerach J, Redwing JM, Fullerton-Shirey SK, Terrones M, Robinson JA. Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide. Acs Applied Materials & Interfaces. PMID 30384598 DOI: 10.1021/Acsami.8B16374 |
0.437 |
|
| 2018 |
Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, ... ... Redwing JM, et al. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Acs Nano. PMID 29360349 DOI: 10.1021/Acsnano.7B07059 |
0.762 |
|
| 2018 |
Zhang X, Choudhury TH, Chubarov M, Xiang Y, Jariwala B, Zhang F, Alem N, Wang GC, Robinson JA, Redwing JM. Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire. Nano Letters. PMID 29342357 DOI: 10.1021/Acs.Nanolett.7B04521 |
0.59 |
|
| 2018 |
Ding L, Ukhtary MS, Chubarov M, Choudhury TH, Zhang F, Yang R, Zhang A, Fan JA, Terrones M, Redwing JM, Yang T, Li M, Saito R, Huang S. Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy Ieee Transactions On Electron Devices. 65: 4059-4067. DOI: 10.1109/Ted.2018.2847230 |
0.358 |
|
| 2018 |
Choudhury TH, Simchi H, Boichot R, Chubarov M, Mohney SE, Redwing JM. Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2 Crystal Growth & Design. 18: 4357-4364. DOI: 10.1021/Acs.Cgd.8B00306 |
0.453 |
|
| 2018 |
Bachu S, Hickey DR, Choudhury TH, Chubarov M, Redwing JM, Alem N. High Resolution S/TEM Study of Defects in MOCVD Grown Mono to Few Layer WS2 Microscopy and Microanalysis. 24: 1636-1637. DOI: 10.1017/S1431927618008668 |
0.32 |
|
| 2018 |
Kozhakhmetov A, Choudhury TH, Balushi ZYA, Chubarov M, Redwing JM. Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition Journal of Crystal Growth. 486: 137-141. DOI: 10.1016/J.Jcrysgro.2018.01.031 |
0.454 |
|
| 2018 |
Hainey MF, Balushi ZYA, Wang K, Martin NC, Bansal A, Chubarov M, Redwing JM. Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization (Phys. Status Solidi RRL 3/2018) Physica Status Solidi-Rapid Research Letters. 12: 1870311. DOI: 10.1002/Pssr.201870311 |
0.412 |
|
| 2018 |
Hainey MF, Balushi ZYA, Wang K, Martin NC, Bansal A, Chubarov M, Redwing JM. Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization Physica Status Solidi-Rapid Research Letters. 12: 1700392. DOI: 10.1002/Pssr.201700392 |
0.415 |
|
| 2017 |
Chubarov M, Choudhury TH, Zhang X, Redwing JM. In-Plane X-ray Diffraction for Characterization of Monolayer and Few-Layer Transition Metal Dichalcogenides Films. Nanotechnology. PMID 29239306 DOI: 10.1088/1361-6528/Aaa1Bd |
0.574 |
|
| 2017 |
Balushi ZYA, Redwing JM. In situ stress measurements during MOCVD growth of thick N-polar InGaN Journal of Applied Physics. 122: 85303. DOI: 10.1063/1.4998745 |
0.387 |
|
| 2017 |
Kendrick C, Kuo M, Li J, Shen H, Mayer TS, Redwing JM. Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride Journal of Applied Physics. 122: 235101. DOI: 10.1063/1.4993632 |
0.654 |
|
| 2017 |
MFH, Innocent-Dolor J, Choudhury TH, Redwing JM. Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment Journal of Applied Physics. 121: 115301. DOI: 10.1063/1.4978706 |
0.358 |
|
| 2017 |
Balushi ZYA, Redwing JM. The effect of polarity on MOCVD growth of thick InGaN Applied Physics Letters. 110: 22101. DOI: 10.1063/1.4972967 |
0.366 |
|
| 2017 |
Simchi H, Walter TN, Choudhury TH, Kirkley LY, Redwing JM, Mohney SE. Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing, and characterization Journal of Materials Science. 52: 10127-10139. DOI: 10.1007/S10853-017-1228-X |
0.385 |
|
| 2016 |
Al Balushi ZY, Wang K, Ghosh RK, Vilá RA, Eichfeld SM, Caldwell JD, Qin X, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, et al. Two-dimensional gallium nitride realized via graphene encapsulation. Nature Materials. PMID 27571451 DOI: 10.1038/Nmat4742 |
0.77 |
|
| 2016 |
Shang SL, Lindwall G, Wang Y, Redwing JM, Anderson T, Liu ZK. Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2. Nano Letters. PMID 27540753 DOI: 10.1021/Acs.Nanolett.6B02443 |
0.386 |
|
| 2016 |
Ke Y, Hainey M, Won D, Weng X, Eichfeld SM, Redwing JM. Carrier gas effects on aluminum-catalyzed nanowire growth. Nanotechnology. 27: 135605. PMID 26900836 DOI: 10.1088/0957-4484/27/13/135605 |
0.724 |
|
| 2016 |
Wang X, Shen H, Eichfield SM, Mayer TS, Redwing JM. Radial Junction Silicon Nanowire Photovoltaics With Heterojunction With Intrinsic Thin Layer (HIT) Structure Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2601949 |
0.657 |
|
| 2016 |
Hainey MF, Redwing JM. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications Applied Physics Reviews. 3. DOI: 10.1063/1.4954398 |
0.453 |
|
| 2016 |
Zhang F, AlSaud MA, Hainey M, Wang K, Redwing JM, Alem N. Study on Chemical Vapor Deposition Growth and Transmission electron Microscopy MoS
2
/h-BN Heterostructure Microscopy and Microanalysis. 22: 1640-1641. DOI: 10.1017/S1431927616009041 |
0.395 |
|
| 2016 |
Gagnon JC, Shen H, Yuwen Y, Wang K, Mayer TS, Redwing JM. Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates Journal of Crystal Growth. 446: 1-6. DOI: 10.1016/J.Jcrysgro.2016.04.027 |
0.821 |
|
| 2016 |
Hainey MF, Chen C, Ke Y, Black MR, Redwing JM. Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.04.009 |
0.477 |
|
| 2016 |
Brom JE, Weiss L, Choudhury TH, Redwing JM. Hybrid physical-chemical vapor deposition of Bi2Se3 films Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.02.027 |
0.817 |
|
| 2016 |
Kendrick CE, Redwing JM. Silicon Micro/Nanowire Solar Cells Semiconductors and Semimetals. 94: 185-225. DOI: 10.1016/Bs.Semsem.2015.10.001 |
0.387 |
|
| 2016 |
Zhang X, Al Balushi ZY, Zhang F, Choudhury TH, Eichfeld SM, Alem N, Jackson TN, Robinson JA, Redwing JM. Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5033-0 |
0.777 |
|
| 2016 |
Gong Y, Zhang X, Redwing JM, Jackson TN. Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 Journal of Electronic Materials. 45: 6280-6284. DOI: 10.1007/S11664-016-4987-2 |
0.587 |
|
| 2015 |
Wang X, Ke Y, Kendrick CE, Weng X, Shen H, Kuo M, Mayer TS, Redwing JM. The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions. Nanoscale. 7: 7267-74. PMID 25811140 DOI: 10.1039/C5Nr00512D |
0.662 |
|
| 2015 |
Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, ... Redwing JM, et al. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. Acs Nano. 9: 2080-7. PMID 25625184 DOI: 10.1021/Nn5073286 |
0.739 |
|
| 2015 |
Al Balushi ZY, Redwing JM. In situ stress measurements during direct MOCVD growth of GaN on SiC Journal of Materials Research. 30: 2900-2909. DOI: 10.1557/Jmr.2015.210 |
0.469 |
|
| 2015 |
Kumar R, Brom JE, Redwing JM, Hunte F. Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition Journal of Applied Physics. 117. DOI: 10.1063/1.4907802 |
0.816 |
|
| 2015 |
Al Balushi ZY, Miyagi T, Lin YC, Wang K, Calderin L, Bhimanapati G, Redwing JM, Robinson JA. The impact of graphene properties on GaN and AlN nucleation Surface Science. 634: 81-88. DOI: 10.1016/J.Susc.2014.11.020 |
0.384 |
|
| 2015 |
Chen C, Zhang X, Krishna L, Kendrick C, Shang SL, Toberer E, Liu ZK, Tamboli A, Redwing JM. Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(Se x S1-x )2 Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.005 |
0.581 |
|
| 2014 |
Bergren MR, Kendrick CE, Neale NR, Redwing JM, Collins RT, Furtak TE, Beard MC. Ultrafast Electrical Measurements of Isolated Silicon Nanowires and Nanocrystals. The Journal of Physical Chemistry Letters. 5: 2050-7. PMID 26270492 DOI: 10.1021/Jz500863A |
0.446 |
|
| 2014 |
Brom JE, Redwing JM. Metalorganic chemical vapor deposition of Bi<inf>2</inf>Se<inf>3</inf> thin films for topological insulator applications Proceedings of Spie - the International Society For Optical Engineering. 9174. DOI: 10.1117/12.2065151 |
0.827 |
|
| 2014 |
Chen C, Zhang W, Xing Z, Sun Y, Jia R, Jin Z, Liu X, Redwing JM. Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes Journal of Applied Physics. 116. DOI: 10.1063/1.4891526 |
0.328 |
|
| 2014 |
Wang J, Hewitt AS, Kumar R, Boltersdorf J, Guan T, Hunte F, Maggard PA, Brom JE, Redwing JM, Dougherty DB. Molecular doping control at a topological insulator surface: F 4-TCNQ on Bi2Se3 Journal of Physical Chemistry C. 118: 14860-14865. DOI: 10.1021/Jp412690H |
0.81 |
|
| 2014 |
Kendrick C, Klafehn G, Guan T, Anderson I, Shen H, Redwing J, Collins R. Controlled growth of SiNPs by plasma synthesis Solar Energy Materials and Solar Cells. 124: 1-9. DOI: 10.1016/J.Solmat.2014.01.026 |
0.64 |
|
| 2014 |
Gagnon JC, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates Journal of Crystal Growth. 393: 98-102. DOI: 10.1016/J.Jcrysgro.2013.08.031 |
0.778 |
|
| 2014 |
Redwing JM, Miao X, Li X. Vapor-Liquid-Solid Growth of Semiconductor Nanowires Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: 399-439. DOI: 10.1016/B978-0-444-63304-0.00009-3 |
0.357 |
|
| 2014 |
Hainey M, Eichfeld SM, Shen H, Yim J, Black MR, Redwing JM. Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires Journal of Electronic Materials. DOI: 10.1007/S11664-014-3565-8 |
0.815 |
|
| 2013 |
Lundgren C, Lopez R, Redwing J, Melde K. FDTD modeling of solar energy absorption in silicon branched nanowires. Optics Express. 21: A392-400. PMID 24104426 DOI: 10.1364/Oe.21.00A392 |
0.336 |
|
| 2013 |
Eichfeld SM, Hainey MF, Shen H, Kendrick CE, Fucinato EA, Yim J, Black MR, Redwing JM. Vapor-liquid-solid growth of 〈110〉 silicon nanowire arrays Proceedings of Spie - the International Society For Optical Engineering. 8820. DOI: 10.1117/12.2026825 |
0.817 |
|
| 2013 |
Won D, Weng X, Al Balushi ZY, Redwing JM. Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates Applied Physics Letters. 103. DOI: 10.1063/1.4845575 |
0.42 |
|
| 2013 |
Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598 |
0.501 |
|
| 2013 |
Won D, Redwing JM. Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates Journal of Crystal Growth. 377: 51-58. DOI: 10.1016/J.Jcrysgro.2013.04.038 |
0.465 |
|
| 2013 |
Yoon E, Nam OH, Kim JK, Kuech TF, Caneau C, Redwing JM, Dadgar A. 16th International Conference on Metalorganic Vapor Phase Epitaxy Journal of Crystal Growth. 370: 370. DOI: 10.1016/J.Jcrysgro.2013.03.008 |
0.462 |
|
| 2013 |
Won D, Weng X, Yuwen YA, Ke Y, Kendrick C, Shen H, Mayer TS, Redwing JM. GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Journal of Crystal Growth. 370: 259-264. DOI: 10.1016/J.Jcrysgro.2012.10.004 |
0.704 |
|
| 2013 |
Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5 |
0.446 |
|
| 2013 |
Kendrick C, Bomberger C, Dawley N, Georgiev J, Shen H, Redwing JM. Silicon nanowire growth on poly-silicon-on-quartz substrates formed by aluminum-induced crystallization Crystal Research and Technology. 48: 658-665. DOI: 10.1002/Crat.201300260 |
0.686 |
|
| 2012 |
Eichfeld CM, Gerstl SS, Prosa T, Ke Y, Redwing JM, Mohney SE. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology. 23: 215205. PMID 22552162 DOI: 10.1088/0957-4484/23/21/215205 |
0.386 |
|
| 2012 |
Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215 |
0.819 |
|
| 2012 |
Yao Y, Aldous JD, Won D, Redwing JM, Linhart W, McConville CF, Reeves RJ, Veal TD, Durbin SM. Epitaxial InGaN on nitridated Si(111) for photovoltaic applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2617-2620. DOI: 10.1109/PVSC.2012.6318131 |
0.405 |
|
| 2012 |
Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680 |
0.815 |
|
| 2012 |
Won D, Weng X, Redwing JM. Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants Applied Physics Letters. 100. DOI: 10.1063/1.3676275 |
0.437 |
|
| 2012 |
Raghavan S, Manning IC, Weng X, Redwing JM. Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth. 359: 35-42. DOI: 10.1016/J.Jcrysgro.2012.08.020 |
0.818 |
|
| 2012 |
Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1 |
0.766 |
|
| 2011 |
Ke Y, Wang X, Weng XJ, Kendrick CE, Yu YA, Eichfeld SM, Yoon HP, Redwing JM, Mayer TS, Habib YM. Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires. Nanotechnology. 22: 445401. PMID 21983364 DOI: 10.1088/0957-4484/22/44/445401 |
0.757 |
|
| 2011 |
Ganapati V, Fenning DP, Bertoni MI, Kendrick CE, Fecych AE, Redwing JM, Buonassisi T. Seeding of silicon wire growth by out-diffused metal precipitates. Small (Weinheim An Der Bergstrasse, Germany). 7: 563-7. PMID 21370455 DOI: 10.1002/Smll.201002250 |
0.379 |
|
| 2011 |
Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144 |
0.799 |
|
| 2011 |
Ye G, Shi K, Burke R, Redwing JM, Mohney SE. Ti/Al ohmic contacts to n-type GaN nanowires Journal of Nanomaterials. 2011. DOI: 10.1155/2011/876287 |
0.325 |
|
| 2011 |
Chen K, Zhuang CG, Li Q, Weng X, Redwing JM, Zhu Y, Voyles PM, Xi XX. MgB2/MgO/MgB2 josephson junctions for high-speed circuits Ieee Transactions On Applied Superconductivity. 21: 115-118. DOI: 10.1109/Tasc.2010.2093853 |
0.39 |
|
| 2011 |
Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE, Mohney SE, Mayer TS. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135144 |
0.379 |
|
| 2011 |
Dai W, Ferrando V, Pogrebnyakov AV, Wilke RHT, Chen K, Weng X, Redwing J, Bark CW, Eom CB, Zhu Y, Voyles PM, Rickel D, Betts JB, Mielke CH, Gurevich A, et al. High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources Superconductor Science and Technology. 24. DOI: 10.1088/0953-2048/24/12/125014 |
0.393 |
|
| 2011 |
Rathi SJ, Jariwala BN, Beach JD, Stradins P, Taylor PC, Weng X, Ke Y, Redwing JM, Agarwal S, Collins RT. Tin-catalyzed plasma-assisted growth of silicon nanowires Journal of Physical Chemistry C. 115: 3833-3839. DOI: 10.1021/Jp1066428 |
0.422 |
|
| 2011 |
Kendrick CE, Redwing JM. The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires Journal of Crystal Growth. 337: 1-6. DOI: 10.1016/J.Jcrysgro.2011.09.049 |
0.431 |
|
| 2011 |
Eichfeld SM, Won D, Trumbull K, Labella M, Weng X, Robinson J, Snyder D, Redwing JM, Paskova T, Udwary K, Mulholland G, Preble E, Evans KR. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2053-2055. DOI: 10.1002/Pssc.201001059 |
0.76 |
|
| 2010 |
Vallett AL, Minassian S, Kaszuba P, Datta S, Redwing JM, Mayer TS. Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors. Nano Letters. 10: 4813-8. PMID 21073180 DOI: 10.1021/Nl102239Q |
0.714 |
|
| 2010 |
Minassian S, Weng X, Redwing JM. Vapor-liquid-solid growth of Si 1-xGe x and Ge/Si 1-xGe x axial heterostructured nanowires Ecs Transactions. 33: 699-706. DOI: 10.1149/1.3487600 |
0.747 |
|
| 2010 |
Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS, Redwing JM. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861571 |
0.769 |
|
| 2010 |
Hu W, Liu B, Dellas NS, Eichfeld SM, Mohney SE, Redwing JM, Mayer TS. Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires Proceedings of Spie - the International Society For Optical Engineering. 7610. DOI: 10.1117/12.846766 |
0.637 |
|
| 2010 |
Vallett AL, Minassian S, Datta S, Redwing JM, Mayer TS. Fabrication of axially-doped silicon nanowire tunnel FETs and characterization of tunneling current Device Research Conference - Conference Digest, Drc. 273-274. DOI: 10.1109/DRC.2010.5551962 |
0.708 |
|
| 2010 |
Zhu Y, Pogrebnyakov AV, Wilke RH, Chen K, Xi XX, Redwing JM, Zhuang CG, Feng QR, Gan ZZ, Singh RK, Shen Y, Newman N, Rowell JM, Hunte F, Jaroszynski J, et al. Nanoscale disorder in pure and doped MgB2 thin films Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/9/095008 |
0.406 |
|
| 2010 |
Zhuang C, Chen K, Redwing JM, Li Q, Xi XX. Surface morphology and thickness dependence of the properties of MgB 2 thin films by hybrid physical-chemical vapor deposition Superconductor Science and Technology. 23. DOI: 10.1088/0953-2048/23/5/055004 |
0.41 |
|
| 2010 |
Dellas NS, Minassian S, Redwing JM, Mohney SE. Formation of nickel germanide contacts to Ge nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3533808 |
0.74 |
|
| 2010 |
Kendrick CE, Yoon HP, Yuwen YA, Barber GD, Shen H, Mallouk TE, Dickey EC, Mayer TS, Redwing JM. Radial junction silicon wire array solar cells fabricated by gold-catalyzed vapor-liquid-solid growth Applied Physics Letters. 97. DOI: 10.1063/1.3496044 |
0.657 |
|
| 2010 |
Won D, Weng X, Redwing JM. Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3487955 |
0.46 |
|
| 2010 |
Yoon HP, Yuwen YA, Kendrick CE, Barber GD, Podraza NJ, Redwing JM, Mallouk TE, Wronski CR, Mayer TS. Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths Applied Physics Letters. 96. DOI: 10.1063/1.3432449 |
0.332 |
|
| 2010 |
Chen K, Zhuang CG, Li Q, Zhu Y, Voyles PM, Weng X, Redwing JM, Singh RK, Kleinsasser AW, Xi XX. High-Jc MgB2 Josephson junctions with operating temperature up to 40 K Applied Physics Letters. 96: 042506. DOI: 10.1063/1.3298366 |
0.344 |
|
| 2010 |
Weng X, Burke RA, Dickey EC, Redwing JM. Effect of reactor pressure on catalyst composition and growth of GaSb nanowires Journal of Crystal Growth. 312: 514-519. DOI: 10.1016/J.Jcrysgro.2009.11.035 |
0.351 |
|
| 2010 |
Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024 |
0.809 |
|
| 2010 |
Burke RA, Weng X, Kuo MW, Song YW, Itsuno AM, Mayer TS, Durbin SM, Reeves RJ, Redwing JM. Growth and characterization of unintentionally doped GaSb nanowires Journal of Electronic Materials. 39: 355-364. DOI: 10.1007/S11664-010-1140-5 |
0.459 |
|
| 2009 |
Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R |
0.47 |
|
| 2009 |
Weng X, Burke RA, Redwing JM. The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition. Nanotechnology. 20: 085610. PMID 19417458 DOI: 10.1088/0957-4484/20/8/085610 |
0.372 |
|
| 2009 |
Nimmatoori P, Zhang Q, Dickey EC, Redwing JM. Suppression of the vapor-liquid-solid growth of silicon nanowires by antimony addition. Nanotechnology. 20: 025607. PMID 19417276 DOI: 10.1088/0957-4484/20/2/025607 |
0.823 |
|
| 2009 |
Allen MW, Weng X, Redwing JM, Sarpatwari K, Mohney SE, von Wenckstern H, Grundmann M, Durbin SM. Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164. DOI: 10.1109/Ted.2009.2026393 |
0.323 |
|
| 2009 |
Hu W, Zhong X, Morrow T, Keating CD, Eichfeld S, Redwing JM, Mayer TS. Axially-doped silicon nanowire field effect transistors for real-time sensing in physiologically relevant buffer solutions Device Research Conference - Conference Digest, Drc. 131-132. DOI: 10.1109/DRC.2009.5354875 |
0.711 |
|
| 2009 |
Hanna M, Wang S, Redwing JM, Xi XX, Salama K. Thickness dependence of critical current density in MgB2 films fabricated by ex situ annealing of CVD-grown B films in Mg vapor Superconductor Science and Technology. 22. DOI: 10.1088/0953-2048/22/1/015024 |
0.405 |
|
| 2009 |
Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331 |
0.828 |
|
| 2009 |
Burke RA, Lamborn DR, Weng X, Redwing JM. Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires Journal of Crystal Growth. 311: 3409-3416. DOI: 10.1016/J.Jcrysgro.2009.03.050 |
0.489 |
|
| 2009 |
Lamborn DR, Wilke RHT, Li Q, Xi XX, Snyder DW, Redwing JM. Modeling studies of an impinging jet reactor design for hybrid physical-chemical vapor deposition of superconducting MgB2 films Journal of Crystal Growth. 311: 1501-1507. DOI: 10.1016/J.Jcrysgro.2009.01.116 |
0.435 |
|
| 2008 |
Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059 |
0.785 |
|
| 2008 |
Li M, Bhiladvala RB, Morrow TJ, Sioss JA, Lew KK, Redwing JM, Keating CD, Mayer TS. Bottom-up assembly of large-area nanowire resonator arrays. Nature Nanotechnology. 3: 88-92. PMID 18654467 DOI: 10.1038/Nnano.2008.26 |
0.566 |
|
| 2008 |
Highstrete C, Lee M, Vallett AL, Eichfeld SM, Redwing JM, Mayer TS. Disorder dominated microwave conductance spectra of doped silicon nanowire arrays. Nano Letters. 8: 1557-61. PMID 18444685 DOI: 10.1021/Nl072496P |
0.724 |
|
| 2008 |
Clark TE, Nimmatoori P, Lew KK, Pan L, Redwing JM, Dickey EC. Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires. Nano Letters. 8: 1246-52. PMID 18321076 DOI: 10.1021/Nl072849K |
0.84 |
|
| 2008 |
Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE. Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1592-1596. DOI: 10.1116/1.2939256 |
0.737 |
|
| 2008 |
Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333 |
0.777 |
|
| 2008 |
Chen K, Veldhorst M, Lee CH, Lamborn DR, Defrain R, Redwing JM, Li Q, Xi XX. Properties of MgB2 films grown at various temperatures by hybrid physical-chemical vapour deposition Superconductor Science and Technology. 21. DOI: 10.1088/0953-2048/21/9/095015 |
0.407 |
|
| 2008 |
Wang SF, Chen K, Lee C-, Soukiassian A, Lamborn DR, Defrain R, Redwing JM, Li Q, Schlom DG, Xi XX. High quality MgB2 thick films and large-area films fabricated by hybrid physical-chemical vapor deposition with a pocket heater Superconductor Science and Technology. 21: 85019. DOI: 10.1088/0953-2048/21/8/085019 |
0.406 |
|
| 2008 |
Hanna M, Wang S, Eck AD, Wilke RHT, Chen K, Soukiassian A, Lee C, Dai W, Li Q, Redwing JM, Schlom DG, Xi XX, Salama K. Clean epitaxial MgB2films fabricated by theex situannealing of chemical vapour deposition-grown B films in Mg vapour Superconductor Science and Technology. 21: 045005. DOI: 10.1088/0953-2048/21/4/045005 |
0.405 |
|
| 2008 |
Acord JD, Manning IC, Weng X, Snyder DW, Redwing JM. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films Applied Physics Letters. 93. DOI: 10.1063/1.2986448 |
0.823 |
|
| 2008 |
Jain A, Weng X, Raghavan S, Vanmil BL, Myers T, Redwing JM. Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2973681 |
0.401 |
|
| 2008 |
Meyer DJ, Flemish JR, Redwing JM. Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaNGaN high-electron-mobility transistors Applied Physics Letters. 92. DOI: 10.1063/1.2928236 |
0.305 |
|
| 2008 |
Dickey EC, Clark TE, Zhang X, Redwing JM. Size effects in the vapor-liquid solid (VLS) growth of semiconductor nanowires Microscopy and Microanalysis. 14: 6-7. DOI: 10.1017/S1431927608087382 |
0.372 |
|
| 2008 |
Fanton MA, Weiland BE, Redwing JM. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition Journal of Crystal Growth. 310: 4088-4093. DOI: 10.1016/J.Jcrysgro.2008.06.027 |
0.743 |
|
| 2008 |
Acord JD, Weng X, Dickey EC, Snyder DW, Redwing JM. Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates Journal of Crystal Growth. 310: 2314-2319. DOI: 10.1016/J.Jcrysgro.2007.11.153 |
0.399 |
|
| 2008 |
Lamborn DR, Wilke RHT, Li Q, Xi A, Snyder DW, Redwing JM. Growth of thick MgB2 films by impinging-jet hybrid physical-chemical vapor deposition Advanced Materials. 20: 319-323. DOI: 10.1002/Adma.200701835 |
0.435 |
|
| 2008 |
Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si1-xGex nanowires Nanoscale Science and Engineering Forum Conference, Presentations At the 2008 Aiche Spring National Meeting. 26-32. |
0.822 |
|
| 2008 |
Nimmatoori P, Zhang Q, Zhang X, Dickey EC, Redwing JM. 23b. Growth characteristics and properties of Si and Si 1-xGex nanowires Aiche Annual Meeting, Conference Proceedings. |
0.822 |
|
| 2007 |
Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires. Nano Letters. 7: 3241-5. PMID 17894516 DOI: 10.1021/Nl071132U |
0.815 |
|
| 2007 |
Goodey AP, Eichfeld SM, Lew KK, Redwing JM, Mallouk TE. Silicon nanowire array photelectrochemical cells. Journal of the American Chemical Society. 129: 12344-5. PMID 17892289 DOI: 10.1021/Ja073125D |
0.801 |
|
| 2007 |
Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248 |
0.712 |
|
| 2007 |
Lamborn DR, Wilke RHT, Li Q, Xi XX, Snyder DW, Redwing JM. Dual-heater reactor design for hybrid physical-chemical vapor deposition of MgB2 thin films Ieee Transactions On Applied Superconductivity. 17: 2862-2866. DOI: 10.1109/Tasc.2007.897990 |
0.446 |
|
| 2007 |
Pogrebnyakov AV, Maertz E, Wilke RHT, Li Q, Soukiassian A, Schlom DG, Redwing JM, Findikoglu A, Xi XX. Polycrystalline ${\rm MgB}_{2}$ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition Ieee Transactions On Applied Superconductivity. 17: 2854-2857. DOI: 10.1109/Tasc.2007.897981 |
0.429 |
|
| 2007 |
Ji H, Kuball M, Burke RA, Redwing JM. Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth Nanotechnology. 18. DOI: 10.1088/0957-4484/18/44/445704 |
0.465 |
|
| 2007 |
Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201 |
0.736 |
|
| 2007 |
Zhu Y, Larbalestier DC, Voyles PM, Pogrebnyakov AV, Xi XX, Redwing JM. Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films Applied Physics Letters. 91. DOI: 10.1063/1.2775088 |
0.384 |
|
| 2007 |
Fanton MA, Weiland BE, Snyder DW, Redwing JM. Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2399882 |
0.741 |
|
| 2007 |
Clark T, Zhang X, Lew K, Pan L, Nimmatoori P, Redwing J, Dickey E. Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth Microscopy and Microanalysis. 13. DOI: 10.1017/S143192760707804X |
0.834 |
|
| 2007 |
Xi XX, Pogrebnyakov AV, Xu SY, Chen K, Cui Y, Maertz EC, Zhuang CG, Li Q, Lamborn DR, Redwing JM, Liu ZK, Soukiassian A, Schlom DG, Weng XJ, Dickey EC, et al. MgB2 thin films by hybrid physical-chemical vapor deposition Physica C: Superconductivity and Its Applications. 456: 22-37. DOI: 10.1016/J.Physc.2007.01.029 |
0.419 |
|
| 2007 |
Lamborn DR, Snyder DW, Xi XX, Redwing JM. Modeling studies of the chemical vapor deposition of boron films from B2H6 Journal of Crystal Growth. 299: 358-364. DOI: 10.1016/J.Jcrysgro.2006.11.253 |
0.448 |
|
| 2007 |
Weng X, Raghavan S, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates Journal of Crystal Growth. 300: 217-222. DOI: 10.1016/J.Jcrysgro.2006.11.030 |
0.444 |
|
| 2007 |
Sheldon BW, Bhandari A, Bower AF, Raghavan S, Weng X, Redwing JM. Steady-state tensile stresses during the growth of polycrystalline films Acta Materialia. 55: 4973-4982. DOI: 10.1016/J.Actamat.2007.05.008 |
0.391 |
|
| 2007 |
Weng X, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition Journal of Electronic Materials. 36: 346-352. DOI: 10.1007/S11664-006-0055-7 |
0.414 |
|
| 2006 |
Li Q, Liu BT, Hu YF, Chen J, Gao H, Shan L, Wen HH, Pogrebnyakov AV, Redwing JM, Xi XX. Large anisotropic normal-state magnetoresistance in clean MgB2 thin films. Physical Review Letters. 96: 167003. PMID 16712262 DOI: 10.1103/Physrevlett.96.167003 |
0.375 |
|
| 2006 |
Everson WJ, Heydemann VD, Gamble RD, Snyder DW, Goda G, Skowronski M, Grim JR, Berkman E, Redwing JM, Acord JD. Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide Materials Science Forum. 1091-1094. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1091 |
0.439 |
|
| 2006 |
Orgiani P, Cui Y, Chen J, Ferrando V, Pogrebnyakov AV, Redwing JM, Li Q, Xi XX. MgB2 Films, Fibres and Heterostructures Grown by an Innovative Hybrid Physical-Chemical Vapor Deposition Technique Advances in Science and Technology. 47: 55-62. DOI: 10.4028/Www.Scientific.Net/Ast.47.55 |
0.386 |
|
| 2006 |
Weng X, Raghavan S, Dickey EC, Redwing JM. Stress and microstructure evolution in compositionally graded Al 1-xGaxN buffer layers for GaN growth on Si Materials Research Society Symposium Proceedings. 892: 27-32. DOI: 10.1557/Proc-0892-Ff02-02 |
0.38 |
|
| 2006 |
Lew KK, Pan L, Dickey EC, Redwing JM. Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth Journal of Materials Research. 21: 2876-2881. DOI: 10.1557/Jmr.2006.0349 |
0.712 |
|
| 2006 |
Chen J, Ferrando V, Orgiani P, Pogrebnyakov AV, Wilke RHT, Betts JB, Mielke CH, Redwing JM, Xi XX, Li Q. Enhancement of flux pinning and high-field critical current density in carbon-alloyed Mg B 2 thin films Physical Review B. 74: 174511. DOI: 10.1103/Physrevb.74.174511 |
0.326 |
|
| 2006 |
Meyer DJ, Flemish JR, Redwing JM. SF6O2 plasma effects on silicon nitride passivation of AlGaNGaN high electron mobility transistors Applied Physics Letters. 89. DOI: 10.1063/1.2400100 |
0.368 |
|
| 2006 |
Chen K, Cui Y, Li Q, Xi XX, Cybart SA, Dynes RC, Weng X, Dickey EC, Redwing JM. Planar MgB 2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB 2/TiB 2 bilayers Applied Physics Letters. 88. DOI: 10.1063/1.2208555 |
0.364 |
|
| 2006 |
Pogrebnyakov AV, Xi XX, Redwing JM, Vaithyanathan V, Schlom DG, Soukiassian A, Mi SB, Jia CL, Giencke JE, Eom CB, Chen J, Hu YF, Cui Y, Li Q. Erratum: “Properties of MgB2 thin films with carbon doping” [Appl. Phys. Lett. 85, 2017 (2004)] Applied Physics Letters. 88: 209903. DOI: 10.1063/1.2206990 |
0.304 |
|
| 2006 |
Raghavan S, Weng X, Dickey E, Redwing JM. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168020 |
0.438 |
|
| 2006 |
Weng X, Acord J, Jain A, Raghavan S, Redwing J, Dickey E. Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers Microscopy and Microanalysis. 12: 906-907. DOI: 10.1017/S1431927606065524 |
0.494 |
|
| 2006 |
Jin BB, Dahm T, Kadlec F, Kuzel P, Gubin AI, Choi E, Kim HJ, Lee S, Kang WN, Wang SF, Zhou YL, Pogrebnyakov AV, Redwing JM, Xi XX, Klein N. Microwave and Terahertz Surface Resistance of MgB2 Thin Films Journal of Superconductivity and Novel Magnetism. 19: 617-623. DOI: 10.1007/S10948-006-0124-4 |
0.301 |
|
| 2005 |
Xu S, Tian M, Wang J, Xu J, Redwing JM, Chan MH. Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam. Small (Weinheim An Der Bergstrasse, Germany). 1: 1221-9. PMID 17193423 DOI: 10.1002/Smll.200500240 |
0.355 |
|
| 2005 |
Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS. Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires. Nano Letters. 5: 2139-43. PMID 16277441 DOI: 10.1021/Nl051442H |
0.627 |
|
| 2005 |
Pan L, Lew KK, Redwing JM, Dickey EC. Stranski-Krastanow growth of germanium on silicon nanowires. Nano Letters. 5: 1081-5. PMID 15943447 DOI: 10.1021/Nl050605Z |
0.696 |
|
| 2005 |
Dilts SM, Mohmmad A, Lew KK, Redwing JM, Mohney SE. Fabrication and electrical characterization of silicon nanowire arrays Materials Research Society Symposium Proceedings. 832: 287-292. DOI: 10.1557/Proc-832-F9.10 |
0.663 |
|
| 2005 |
Redwing JM, Dilts SM, Lew KK, Cranmer A, Mohney SE. High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.632745 |
0.66 |
|
| 2005 |
Orgiani P, Cui Y, Pogrebnyakov AV, Redwing JM, Vaithyanathan V, Schlom DG, Xi XX. Investigations of MgB2/MgO and MgB2/AlN heterostructures for Josephson devices Ieee Transactions On Applied Superconductivity. 15: 228-231. DOI: 10.1109/Tasc.2005.849764 |
0.428 |
|
| 2005 |
Cui Y, Jones JE, Beckley A, Donovan R, Lishego D, Maertz E, Pogrebnyakov AV, Orgiani P, Redwing JM, Xi XX. Degradation of MgB/sub 2/ thin films in water Ieee Transactions On Applied Superconductivity. 15: 224-227. DOI: 10.1109/Tasc.2005.849763 |
0.351 |
|
| 2005 |
Pogrebnyakov A, Redwing J, Giencke J, Eom C, Vaithyanathan V, Schlom D, Soukiassian A, Mi S, Jia C, Chen J, Hu Y, Cui Y, Li Q, Xi X. Carbon-Doped<tex>$rm MgB_2$</tex>Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition Ieee Transactions On Appiled Superconductivity. 15: 3321-3324. DOI: 10.1109/Tasc.2005.848871 |
0.362 |
|
| 2005 |
Ye Z, Li Q, Hu Y, Pogrebnyakov A, Cui Y, Xi X, Redwing J, Li Q. Magneto-Optical Imaging Studies of Flux Propagation in Ultra-Pure and Carbon-Doped<tex>$rm MgB_2$</tex>Thin Films Ieee Transactions On Appiled Superconductivity. 15: 3273-3276. DOI: 10.1109/Tasc.2005.848850 |
0.374 |
|
| 2005 |
Ferdeghini C, Ferrando V, Tarantini C, Bellingeri E, Grasso G, Malagoli A, Marre D, Putti M, Manfrinetti P, Pogrebnyakov A, Redwing JM, Xi XX, Felici R, Haanappel E. Upper critical fields up to 60 T in dirty magnesium diboride thin films Ieee Transactions On Applied Superconductivity. 15: 3234-3237. DOI: 10.1109/Tasc.2005.848827 |
0.326 |
|
| 2005 |
Iavarone M, Capua RD, Koshelev AE, Kwok WK, Chiarella F, Vaglio R, Kang WN, Choi EM, Kim HJ, Lee SI, Pogrebnyakov AV, Redwing JM, Xi XX. Effect of disorder in MgB 2 thin films Physical Review B. 71: 214502. DOI: 10.1103/Physrevb.71.214502 |
0.33 |
|
| 2005 |
Braccini V, Gurevich A, Giencke JE, Jewell MC, Eom CB, Larbalestier DC, Pogrebnyakov A, Cui Y, Liu BT, Hu YF, Redwing JM, Li Q, Xi XX, Singh RK, Gandikota R, et al. Erratum: High-field superconductivity in alloyedMgB2thin films [Phys. Rev. B71, 012504 (2005)] Physical Review B. 71. DOI: 10.1103/Physrevb.71.179902 |
0.315 |
|
| 2005 |
Tenne DA, Xi XX, Pogrebnyakov AV, Redwing JM. Raman scattering in pure and carbon-doped Mg B2 films Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.132512 |
0.373 |
|
| 2005 |
Raghavan S, Weng X, Dickey E, Redwing JM. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2081128 |
0.447 |
|
| 2005 |
Jin B, Kuzel P, Kadlec F, Dahm T, Redwing J, Pogrebnyakov A, Xi X, Klein N. Terahertz surface impedance of epitaxial MgB2 thin film Applied Physics Letters. 87: 92503. DOI: 10.1063/1.2034107 |
0.384 |
|
| 2005 |
Gandikota R, Singh RK, Kim J, Wilkens B, Newman N, Rowell JM, Pogrebnyakov AV, Xi XX, Redwing JM, Xu SY, Li Q, Moeckly BH. Effect of damage by 2 MeV He ions and annealing on H c2 in MgB 2 thin films Applied Physics Letters. 87. DOI: 10.1063/1.2012524 |
0.338 |
|
| 2005 |
Raghavan S, Redwing JM. Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers Journal of Applied Physics. 98. DOI: 10.1063/1.1978991 |
0.438 |
|
| 2005 |
Raghavan S, Acord J, Redwing JM. In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1968436 |
0.445 |
|
| 2005 |
Pan L, Lew K, Redwing J, Dickey E. Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605507505 |
0.429 |
|
| 2005 |
Mohney SE, Wang Y, Cabassi MA, Lew KK, Dey S, Redwing JM, Mayer TS. Measuring the specific contact resistance of contacts to semiconductor nanowires Solid-State Electronics. 49: 227-232. DOI: 10.1016/J.Sse.2004.08.006 |
0.356 |
|
| 2005 |
Pan L, Lew KK, Redwing JM, Dickey EC. Effect of diborane on the microstructure of boron-doped silicon nanowires Journal of Crystal Growth. 277: 428-436. DOI: 10.1016/J.Jcrysgro.2005.01.091 |
0.692 |
|
| 2005 |
Bogart TE, Dey S, Lew KK, Mohney SE, Redwing JM. Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes Advanced Materials. 17: 114-117. DOI: 10.1002/Adma.200400373 |
0.584 |
|
| 2004 |
Pogrebnyakov AV, Redwing JM, Raghavan S, Vaithyanathan V, Schlom DG, Xu SY, Li Q, Tenne DA, Soukiassian A, Xi XX, Johannes MD, Kasinathan D, Pickett WE, Wu JS, Spence JC. Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening. Physical Review Letters. 93: 147006. PMID 15524834 DOI: 10.1103/Physrevlett.93.147006 |
0.336 |
|
| 2004 |
Jin BB, Dahm T, Iniotakis C, Gubin AI, Choi E, Kim HJ, Lee S, Kang WN, Wang SF, Zhou YL, Pogrebnyakov AV, Redwing JM, Xi XX, Klein N. Dependence of penetration depth, microwave surface resistance and energy gap of MgB2 thin films on their normal-state resistivity Superconductor Science and Technology. 18: L1-L4. DOI: 10.1088/0953-2048/18/1/L01 |
0.341 |
|
| 2004 |
Xi XX, Pogrebnyakov AV, Zeng XH, Redwing JM, Xu SY, Li Q, Liu Z, Lettieri J, Vaithyanathan V, Schlom DG, Christen HM, Zhai HY, Goyal A. Progress in the deposition of MgB2thin films Superconductor Science and Technology. 17: S196-S201. DOI: 10.1088/0953-2048/17/5/021 |
0.381 |
|
| 2004 |
Ye ZX, Li Q, Hu YF, Pogrebnyakov AV, Cui Y, Xi XX, Redwing JM, Li Q. Electron scattering dependence of dendritic magnetic instability in superconducting MgB2 films Applied Physics Letters. 85: 5284-5286. DOI: 10.1063/1.1827931 |
0.343 |
|
| 2004 |
Lew KK, Pan L, Bogart TE, Dilts SM, Dickey EC, Redwing JM, Wang Y, Cabassi M, Mayer TS, Novak SW. Structural and electrical properties of trimethylboron-doped silicon nanowires Applied Physics Letters. 85: 3101-3103. DOI: 10.1063/1.1792800 |
0.648 |
|
| 2004 |
Pogrebnyakov AV, Xi XX, Redwing JM, Vaithyanathan V, Schlom DG, Soukiassian A, Mi SB, Jia CL, Giencke JE, Eom CB, Chen J, Hu YF, Cui Y, Li Q. Properties of MgB2 thin films with carbon doping Applied Physics Letters. 85: 2017-2019. DOI: 10.1063/1.1782258 |
0.368 |
|
| 2004 |
Wu JS, Jiang N, Jiang B, Spence JCH, Pogrebnyakov AV, Redwing JM, Xi XX. Interface structures in MgB 2 thin films on (0001) SiC Applied Physics Letters. 85: 1155-1157. DOI: 10.1063/1.1779338 |
0.453 |
|
| 2004 |
Raghavan S, Redwing JM. Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates Journal of Applied Physics. 96: 2995-3003. DOI: 10.1063/1.1777812 |
0.485 |
|
| 2004 |
Shinde SR, Ogale SB, Higgins J, Choudhary RJ, Kulkarni VN, Venkatesan T, Zheng H, Ramesh R, Pogrebnyakov AV, Xu SY, Li Q, Xi XX, Redwing JM, Kanjilal D. Modification of critical current density of MgB 2 films irradiated with 200 MeV Ag ions Applied Physics Letters. 84: 2352-2354. DOI: 10.1063/1.1687982 |
0.336 |
|
| 2004 |
Xiong Q, Chen G, Acord JD, Liu X, Zengel JJ, Gutierrez HR, Redwing JM, Lew Yan Voon LC, Lassen B, Eklund PC. Optical Properties of Rectangular Cross-sectional ZnS Nanowires Nano Letters. 4: 1663-1668. DOI: 10.1021/Nl049169R |
0.322 |
|
| 2004 |
Dickey EC, Pan L, Lew KK, Redwing JM. Development of doped and heterostructured Si-Ge nanowires Microscopy and Microanalysis. 10: 22-23. DOI: 10.1017/S143192760488574X |
0.657 |
|
| 2004 |
Acord JD, Raghavan S, Snyder DW, Redwing JM. In situ stress measurements during MOCVD growth of AlGaN on SiC Journal of Crystal Growth. 272: 65-71. DOI: 10.1016/J.Jcrysgro.2004.08.033 |
0.429 |
|
| 2004 |
Jain A, Raghavan S, Redwing JM. Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates Journal of Crystal Growth. 269: 128-133. DOI: 10.1016/J.Jcrysgro.2004.05.042 |
0.463 |
|
| 2004 |
Raghavan S, Redwing JM. In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates Journal of Crystal Growth. 261: 294-300. DOI: 10.1016/J.Jcrysgro.2003.11.020 |
0.495 |
|
| 2003 |
Dierolf V, Svitelskiy O, Cargill GS, Nikiforov AY, Redwing J, Acord J. Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.64 |
0.338 |
|
| 2003 |
Jain A, Redwing JM. Study of the growth mechanism and properties of InN films grown by MOCVD Materials Research Society Symposium - Proceedings. 798: 225-230. DOI: 10.1557/Proc-798-Y12.8 |
0.458 |
|
| 2003 |
Mohammad AM, Dey S, Lew KK, Redwing JM, Mohney SE. Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598966 |
0.667 |
|
| 2003 |
Xi XX, Zeng XH, Pogrebnyakov AV, Xu SY, Li Q, Zhong Y, Brubaker CO, Liu Z, Lysczek EM, Redwing JM, Lettieri J, Schlom DG, Tian W, Pan XQ. In situ growth of MgB/sub 2/ thin films by hybrid physical-chemical vapor deposition Ieee Transactions On Applied Superconductivity. 13: 3233-3237. DOI: 10.1109/Tasc.2003.812209 |
0.427 |
|
| 2003 |
Xu SY, Li Q, Wertz E, Hu YF, Pogrebnyakov AV, Zeng XH, Xi XX, Redwing JM. High critical current density and vortex pinning of epitaxialMgB2thin films Physical Review B. 68: 224501. DOI: 10.1103/Physrevb.68.224501 |
0.312 |
|
| 2003 |
Rowell JM, Xu SY, Zeng XH, Pogrebnyakov AV, Li Q, Xi XX, Redwing JM, Tian W, Pan X. Critical current density and resistivity of MgB2 films Applied Physics Letters. 83: 102-104. DOI: 10.1063/1.1590734 |
0.341 |
|
| 2003 |
Pogrebnyakov AV, Redwing JM, Jones JE, Xi XX, Xu SY, Li Q, Vaithyanathan V, Schlom DG. Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 82: 4319-4321. DOI: 10.1063/1.1583852 |
0.413 |
|
| 2003 |
Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256. DOI: 10.1063/1.1573351 |
0.788 |
|
| 2003 |
Zeng XH, Pogrebnyakov AV, Zhu MH, Jones JE, Xi XX, Xu SY, Wertz E, Li Q, Redwing JM, Lettieri J, Vaithyanathan V, Schlom DG, Liu Z, Trithaveesak O, Schubert J. Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition Applied Physics Letters. 82: 2097-2099. DOI: 10.1063/1.1563840 |
0.459 |
|
| 2003 |
Xi XX, Zeng XH, Pogrebnyakov AV, Soukiassian A, Xu SY, Hu YF, Wertz E, Li Q, Zhong Y, Brubaker CO, Liu Z-, Lysczek EM, Redwing JM, Lettieri J, Schlom DG, et al. Deposition and properties of superconducting MgB2 thin films Journal of Superconductivity. 16: 801-806. DOI: 10.1023/A:1026294632677 |
0.418 |
|
| 2003 |
Lew KK, Redwing JM. Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates Journal of Crystal Growth. 254: 14-22. DOI: 10.1016/S0022-0248(03)01146-1 |
0.677 |
|
| 2003 |
Lew KK, Pan L, Dickey EC, Redwing JM. Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires Advanced Materials. 15: 2073-2076. DOI: 10.1002/Adma.200306035 |
0.67 |
|
| 2002 |
Zeng X, Pogrebnyakov AV, Kotcharov A, Jones JE, Xi XX, Lysczek EM, Redwing JM, Xu S, Li Q, Lettieri J, Schlom DG, Tian W, Pan X, Liu ZK. In situ epitaxial MgB2 thin films for superconducting electronics. Nature Materials. 1: 35-8. PMID 12618845 DOI: 10.1038/Nmat703 |
0.409 |
|
| 2002 |
Lew KK, Reuther C, Carim AH, Redwing JM, Martin BR. Template-directed vapor-liquid-solid growth of silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 389-392. DOI: 10.1116/1.1430240 |
0.677 |
|
| 2001 |
Schaadt DM, Miller EJ, Yu ET, Redwing JM. Quantitative analysis of nanoscale electronic properties in an AlxGa1-xN/GaN heterostructure field-effect transistor structure Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1671-1674. DOI: 10.1116/1.1385914 |
0.308 |
|
| 2001 |
Zhang AP, Johnson JW, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Lee KP, Pearton SJ. Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage Applied Physics Letters. 78: 823-825. DOI: 10.1063/1.1346622 |
0.349 |
|
| 2001 |
Schaadt DM, Miller EJ, Yu ET, Redwing JM. Lateral variations in threshold voltage of an AlxGa1-xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy Applied Physics Letters. 78: 88-90. DOI: 10.1063/1.1335840 |
0.314 |
|
| 2001 |
Carim AH, Lew KK, Redwing JM. Bicrystalline silicon nanowires Advanced Materials. 13: 1489-1491. DOI: 10.1002/1521-4095(200110)13:19<1489::Aid-Adma1489>3.0.Co;2-E |
0.418 |
|
| 2000 |
Wang SP, Powell AR, Redwing JM, Piner E, Saxler AW. Generation and Properties of Semi-Insulating SiC Substrates Materials Science Forum. 17-20. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.17 |
0.361 |
|
| 2000 |
Piner EL, Keogh DM, Flynn JS, Redwing JM. AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S109257830000449X |
0.441 |
|
| 2000 |
Kuech T, Gu S, Wate R, Zhang L, Sun J, Dumesic J, Redwing J. The Chemistry of GaN Growth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G1.1 |
0.643 |
|
| 2000 |
Stocker DA, Goepfert ID, Schubert EF, Boutros KS, Redwing JM. Crystallographic wet chemical etching of p-type GaN Journal of the Electrochemical Society. 147: 763-764. DOI: 10.1149/1.1393267 |
0.362 |
|
| 2000 |
Smith KV, Dang XZ, Yu ET, Redwing JM. Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2304-2308. DOI: 10.1116/1.1303738 |
0.33 |
|
| 2000 |
Miller EJ, Dang XZ, Wieder HH, Asbeck PM, Yu ET, Sullivan GJ, Redwing JM. Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor Journal of Applied Physics. 87: 8070-8073. DOI: 10.1063/1.373499 |
0.347 |
|
| 2000 |
Qiao D, Yu LS, Lau SS, Redwing JM, Lin JY, Jiang HX. Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction Journal of Applied Physics. 87: 801-804. DOI: 10.1063/1.371944 |
0.32 |
|
| 2000 |
Hashizume T, Alekseev E, Pavlidis D, Boutros KS, Redwing J. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition Journal of Applied Physics. 88: 1983-1986. DOI: 10.1063/1.1303722 |
0.457 |
|
| 2000 |
Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cho H, Pearton SJ. Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 3816-3818. DOI: 10.1063/1.126791 |
0.347 |
|
| 2000 |
Zhang AP, Dang G, Ren F, Han J, Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM, Cao XA, Pearton SJ. Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers Applied Physics Letters. 76: 1767-1769. DOI: 10.1063/1.126161 |
0.371 |
|
| 2000 |
Sun J, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts Applied Physics Letters. 76: 415-417. DOI: 10.1063/1.125772 |
0.596 |
|
| 2000 |
Vescan A, Dietrich R, Wieszt A, Schurr A, Leier H, Piner EL, Redwing JM. AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz Electronics Letters. 36: 1234-1236. DOI: 10.1049/El:20000898 |
0.335 |
|
| 2000 |
Sun J, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9. DOI: 10.1007/S11664-000-0085-5 |
0.625 |
|
| 2000 |
Piner EL, Keogh DM, Flynn JS, Redwing JM. AlGaN/GaN high electron mobility transistor structure design and effects on electrical properties Materials Research Society Symposium - Proceedings. 595. |
0.33 |
|
| 1999 |
Stocker DA, Schubert EF, Boutros KS, Redwing JM. Fabrication of smooth GaN-based laser facets Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300003446 |
0.393 |
|
| 1999 |
Fung AK, Cai C, Ruden PP, Nathan MI, Chen MY, McDermott BT, Sullivan GJ, Hove JMV, Boutros K, Redwing J, Yange JW, Chene Q, Khane MA, Schaff W, Murphy M. Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates Mrs Proceedings. 572. DOI: 10.1557/Proc-572-495 |
0.367 |
|
| 1999 |
Sullivan G, Gertner E, Pittman R, Chen M, Pierson R, Higgins A, Chen Q, Yang J, Smith RP, Perez R, Khan A, Redwing J, McDermott B. AlGaN Microwave Power HFETs on Insulating SiC Substrates Mrs Proceedings. 572: 471. DOI: 10.1557/Proc-572-471 |
0.308 |
|
| 1999 |
Sun J, Redwing JM, Kuech TF. Comparative study of GaN growth process by MOVPE Materials Research Society Symposium - Proceedings. 572: 463-468. DOI: 10.1557/Proc-572-463 |
0.616 |
|
| 1999 |
Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures Journal of the Electrochemical Society. 146: 3506-3509. DOI: 10.1149/1.1392505 |
0.543 |
|
| 1999 |
Li R, Cai J, Wong L, Chen Y, Wang KL, Smith RP, Martin SC, Boutros KS, Redwing JM. Al0.3Ga0.7N/GaN undoped channel heterostructure field effect transistor with Fmax of 107 GHz Ieee Electron Device Letters. 20: 323-325. DOI: 10.1109/55.772364 |
0.351 |
|
| 1999 |
Smith KV, Yu ET, Redwing JM, Boutros KS. Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures Applied Physics Letters. 75: 2250-2252. DOI: 10.1063/1.124980 |
0.354 |
|
| 1999 |
Smith GM, Redwing JM, Vaudo RP, Ross EM, Flynn JS, Phanse VM. Substrate effects on GaN photoconductive detector performance Applied Physics Letters. 75: 25-27. DOI: 10.1063/1.124265 |
0.438 |
|
| 1999 |
Dang XZ, Asbeck PM, Yu ET, Sullivan GJ, Chen MY, McDermott BT, Boutros KS, Redwing JM. Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor Applied Physics Letters. 74: 3890-3892. DOI: 10.1063/1.124214 |
0.337 |
|
| 1999 |
Bandić ZZ, Bridger PM, Piquette EC, McGill TC, Vaudo RP, Phanse VM, Redwing JM. High voltage (450 V) GaN Schottky rectifiers Applied Physics Letters. 74: 1266-1268. DOI: 10.1063/1.123520 |
0.35 |
|
| 1999 |
Ping A, Selvanathan D, Youtsey C, Piner E, Redwing J, Adesida I. Gate recessing of GaN MESFETs using photoelectrochemical wet etching Electronics Letters. 35: 2140. DOI: 10.1049/El:19991341 |
0.356 |
|
| 1999 |
Zhou L, Ping A, Boutros K, Redwing J, Adesida I. Characterisation of rhenium Schottky contacts on n-type AlxGa1–xN Electronics Letters. 35: 745. DOI: 10.1049/El:19990489 |
0.335 |
|
| 1999 |
Dang XZ, Welty RJ, Qiao D, Asbeck PM, Lau SS, Yu ET, Boutros KS, Redwing JM. Fabrication and characterization of enhanced barrier AlGaN/GaN HFET Electronics Letters. 35: 602-603. DOI: 10.1049/El:19990282 |
0.367 |
|
| 1999 |
Smith KV, Yuf ET, Redwing JM, Boutros KS. Local electronic structure of AlGaN/GaN heterostructures probed by scanning capacitance microscopy Journal of Electronic Materials. 28: 1027. DOI: 10.1007/S11664-000-0062-Z |
0.361 |
|
| 1999 |
Sun J, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride Physica Status Solidi (a) Applied Research. 176: 693-698. DOI: 10.1002/(Sici)1521-396X(199911)176:1<693::Aid-Pssa693>3.0.Co;2-Z |
0.624 |
|
| 1999 |
Dietrich R, Vescan A, Wieszt A, Leier H, Boutros KS, Redwing JM, Kornitzer K, Freitag R, Ebner T, Thonke K. Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs Physica Status Solidi (a). 176: 209-212. DOI: 10.1002/(Sici)1521-396X(199911)176:1<209::Aid-Pssa209>3.0.Co;2-Q |
0.312 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Greve DW, Skowronski M, Shin M, Redwing JM. Schottky diodes on MOCVD grown AlGaN films Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300001095 |
0.427 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Persistent photoconductivity in AlGaN films Grown by mocvd Mrs Proceedings. 512: 537. DOI: 10.1557/Proc-512-537 |
0.424 |
|
| 1998 |
Bandić ZZ, Bridger PM, Piquette EC, Beach RA, Phanse VM, Vaudo RP, Redwing J, McGill TC. Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals Mrs Proceedings. 512. DOI: 10.1557/Proc-512-27 |
0.38 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Deep Levels In High Resistivity AlGaN Films Grown By MOCVD Mrs Proceedings. 512. DOI: 10.1557/Proc-512-239 |
0.355 |
|
| 1998 |
Stocker D, Schubert EF, Grieshaber W, Boutros KS, Flynn JS, Vaudo RP, Phanse VM, Redwing JM. InGaN/GaN double heterostructure laser with cleaved facets Proceedings of Spie - the International Society For Optical Engineering. 3284: 122-127. DOI: 10.1117/12.304461 |
0.337 |
|
| 1998 |
Schubert EF, Grieshaber W, Boutros KS, Redwing JM. Yellow photoluminescence in MOCVD-grown n-type GaN Proceedings of Spie - the International Society For Optical Engineering. 3279: 59-68. DOI: 10.1117/12.304430 |
0.331 |
|
| 1998 |
Smith GM, Boutros KS, Szewczuk JW, Flynn JS, Phanse VM, Vaudo RP, Redwing JM. InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates Proceedings of Spie - the International Society For Optical Engineering. 3279: 8-16. DOI: 10.1117/12.304424 |
0.448 |
|
| 1998 |
Yu LS, Liu QZ, Xing QJ, Qiao DJ, Lau SS, Redwing J. The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes Journal of Applied Physics. 84: 2099-2104. DOI: 10.1063/1.368270 |
0.303 |
|
| 1998 |
Liu QZ, Yu LS, Deng F, Lau SS, Redwing JM. Ni and Ni silicide Schottky contacts on n-GaN Journal of Applied Physics. 84: 881-886. DOI: 10.1063/1.368151 |
0.375 |
|
| 1998 |
Yu LS, Xing QJ, Qiao D, Lau SS, Boutros KS, Redwing JM. Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure Applied Physics Letters. 73: 3917-3919. DOI: 10.1063/1.122935 |
0.338 |
|
| 1998 |
Stocker DA, Schubert EF, Redwing JM. Crystallographic wet chemical etching of GaN Applied Physics Letters. 73: 2654-2656. DOI: 10.1063/1.122543 |
0.381 |
|
| 1998 |
Yu ET, Dang XZ, Yu LS, Qiao D, Asbeck PM, Lau SS, Sullivan GJ, Boutros KS, Redwing JM. Schottky barrier engineering in III-V nitrides via the piezoelectric effect Applied Physics Letters. 73: 1880-1882. DOI: 10.1063/1.122312 |
0.367 |
|
| 1998 |
Dang XZ, Wang CD, Yu ET, Boutros KS, Redwing JM. Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures Applied Physics Letters. 72: 2745-2747. DOI: 10.1063/1.121077 |
0.321 |
|
| 1998 |
Stocker D, Schubert EF, Boutros KS, Flynn JS, Vaudo RP, Phanse VM, Redwing JM. Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets Electronics Letters. 34: 373-375. DOI: 10.1049/El:19980323 |
0.332 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Redwing JM. Deep traps in high resistivity AlGaN films Solid-State Electronics. 42: 831-838. DOI: 10.1016/S0038-1101(98)00089-6 |
0.41 |
|
| 1998 |
Polyakov AY, Govorkov AV, Smirnov NB, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW. Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy Solid-State Electronics. 42: 637-646. DOI: 10.1016/S0038-1101(97)00278-5 |
0.425 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW, Wilson RG. Properties of Si donors and persistent photoconductivity in AlGaN Solid-State Electronics. 42: 627-635. DOI: 10.1016/S0038-1101(97)00277-3 |
0.46 |
|
| 1997 |
Goepfert ID, Schubert EF, Redwing JM. Luminescence properties of Si-doped GaN and evidence of compensating defects as the origin of the yellow luminescence Materials Research Society Symposium - Proceedings. 482: 679-684. DOI: 10.1557/Proc-482-679 |
0.374 |
|
| 1997 |
Dunn KA, Babcock SE, Vaudo R, Phanse V, Redwing J. Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE Mrs Proceedings. 482. DOI: 10.1557/Proc-482-417 |
0.429 |
|
| 1997 |
Boutros KS, Flynn JS, Phanse V, Vaudo RP, Smith GM, Redwing JM, Tolliver TR, Anderson NG. InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates Materials Research Society Symposium - Proceedings. 482: 1047-1052. DOI: 10.1557/Proc-482-1047 |
0.473 |
|
| 1997 |
Venugopalan HS, Mohney SE, Luther BP, Delucca JM, Wolter SD, Redwing JM, Bulman GE. Phase formation and morphology in nickel and nickel/gold contacts to gallium nitride Materials Research Society Symposium - Proceedings. 468: 431-436. DOI: 10.1557/Proc-468-431 |
0.404 |
|
| 1997 |
Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy: A comparison of modeling and experimental measurements Journal of the Electrochemical Society. 144: 1789-1796. DOI: 10.1149/1.1837681 |
0.541 |
|
| 1997 |
Culp TD, Hömmerich U, Redwing JM, Kuech TF, Bray KL. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure Journal of Applied Physics. 82: 368-374. DOI: 10.1063/1.365821 |
0.506 |
|
| 1997 |
Venugopalan HS, Mohney SE, Luther BP, Wolter SD, Redwing JM. Interfacial reactions between nickel thin films and GaN Journal of Applied Physics. 82: 650-654. DOI: 10.1063/1.365593 |
0.386 |
|
| 1997 |
Schubert EF, Goepfert ID, Redwing JM. Evidence of compensating centers as origin of yellow luminescence in GaN Applied Physics Letters. 71: 3224-3226. DOI: 10.1063/1.120297 |
0.331 |
|
| 1997 |
Schubert EF, Goepfert ID, Grieshaber W, Redwing JM. Optical properties of Si-doped GaN Applied Physics Letters. 71: 921-923. DOI: 10.1063/1.119689 |
0.375 |
|
| 1997 |
Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally Stable Ptsi Schottky Contact On N-Gan Applied Physics Letters. 70: 1275-1277. DOI: 10.1063/1.118551 |
0.555 |
|
| 1997 |
Asbeck PM, Yu ET, Lau SS, Sullivan GJ, Hove JV, Redwing J. Piezoelectric charge densities in AlGaN/GaN HFETs Electronics Letters. 33: 1230-1231. DOI: 10.1049/El:19970843 |
0.323 |
|
| 1997 |
Binari SC, Redwing JM, Kelner G, Kruppa W. AlGaN/GaN HEMTs grown on SiC substrates Electronics Letters. 33: 242-243. DOI: 10.1049/El:19970122 |
0.343 |
|
| 1997 |
Liu J, Zhi D, Redwing JM, Tischler MA, Kuech TF. GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction Journal of Crystal Growth. 170: 357-361. DOI: 10.1016/S0022-0248(96)00588-X |
0.535 |
|
| 1996 |
Safvi SA, Redwing JM, Thon A, Flynn JS, Tischler MA, Kuech TF. MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization Mrs Proceedings. 449: 101. DOI: 10.1557/Proc-449-101 |
0.537 |
|
| 1996 |
Redwing JM, Flynn JS, Tischler MA, Mitchel W, Saxler A. MOVPE growth of high electron mobility AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 395: 201-206. DOI: 10.1557/Proc-395-201 |
0.401 |
|
| 1996 |
Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, Geisz J, Kuech TF. Strain‐induced band‐gap modulation in GaAs/AlGaAs quantum‐well structure using thin‐film stressors Journal of Applied Physics. 79: 1763-1771. DOI: 10.1063/1.360966 |
0.496 |
|
| 1996 |
Redwing JM, Loeber DAS, Anderson NG, Tischler MA, Flynn JS. An optically pumped GaN-AlGaN vertical cavity surface emitting laser Applied Physics Letters. 69: 1-3. DOI: 10.1063/1.118104 |
0.306 |
|
| 1996 |
Liu J, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near‐field scanning optical microscopy study of the photoluminescence from GaN films Applied Physics Letters. 69: 3519-3521. DOI: 10.1063/1.117231 |
0.591 |
|
| 1996 |
Redwing JM, Tischler MA, Flynn JS, Elhamri S, Ahoujja M, Newrock RS, Mitchel WC. Two-dimensional electron gas properties of AIGaN/GaN heterostructures grown on 6H-SiC and sapphire substrates Applied Physics Letters. 69: 963-965. DOI: 10.1063/1.117096 |
0.409 |
|
| 1996 |
Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) Applied Physics Letters. 68: 1270-1272. DOI: 10.1063/1.115949 |
0.518 |
|
| 1996 |
Safvi SA, Redwing JM, Tischler MA, Kuech TF. Modeling study of GaN growth by MOVPE Materials Research Society Symposium - Proceedings. 395: 255-260. |
0.465 |
|
| 1996 |
Liu J, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near-field scanning optical microscopy study of the photoluminescence from GaN films Applied Physics Letters. 69: 3519-3521. |
0.342 |
|
| 1995 |
Safvi SA, Redwing JM, Tischler MA, Kuech TF. A modeling study of GaN growth by MOVPE Mrs Proceedings. 395: 255. DOI: 10.1557/Proc-395-255 |
0.53 |
|
| 1995 |
Gaines D, Hop M, Kuech T, Redwing J, Saulys D, Thon A. New Si CVD precursors: preparation and pre-screening Materials Research Society Symposium - Proceedings. 377: 81-86. DOI: 10.1557/Proc-377-81 |
0.576 |
|
| 1995 |
Kocha SS, Peterson MW, Arent DJ, Redwing JM, Tischler MA, Turner JA. Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2048511 |
0.302 |
|
| 1995 |
Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Redwing JM, Kuech TF. Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology Journal of Applied Physics. 78: 236-244. DOI: 10.1063/1.360657 |
0.537 |
|
| 1995 |
Nayak S, Redwing JM, Huang JW, Lagally MG, Kuech TF. Influence of impurities on mechanisms of growth in MOVPE GaAs Materials Research Society Symposium - Proceedings. 367: 293-298. |
0.388 |
|
| 1994 |
Nayak S, Redwing J, Huang J, Lagally M, Kuech T. Influence of Impurities On Mechanisms of Growth in Movpe GaAs Mrs Proceedings. 367. DOI: 10.1557/Proc-367-293 |
0.618 |
|
| 1994 |
Nayak S, Redwing J, Kuech T, Savage D, Lagally M. Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition Mrs Proceedings. 332. DOI: 10.1557/Proc-332-249 |
0.509 |
|
| 1994 |
Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources Journal of Applied Physics. 76: 1585-1591. DOI: 10.1063/1.357737 |
0.577 |
|
| 1994 |
Redwing JM, Nayak S, Savage DE, Lagally MG, Dawson-Elli DF, Kuech TF. The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 792-798. DOI: 10.1016/0022-0248(94)91144-4 |
0.546 |
|
| 1994 |
Redwing JM, Simka H, Jensen KF, Kuech TF. Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine Journal of Crystal Growth. 145: 397-402. DOI: 10.1016/0022-0248(94)91082-0 |
0.637 |
|
| 1994 |
Kuech TF, Redwing JM. Carbon doping in metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 382-389. DOI: 10.1016/0022-0248(94)91080-4 |
0.491 |
|
| 1994 |
Redwing JM, Kuech TF, Saulys D, Gaines DF. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source Journal of Crystal Growth. 135: 423-433. DOI: 10.1016/0022-0248(94)90130-9 |
0.596 |
|
| 1993 |
Redwing J, Kuech T, Simka H, Jensen K. Study of Silicon Incorporation in GaAs Movpe Layers Grown With Tertiarybutylarsine Mrs Proceedings. 334. DOI: 10.1557/Proc-334-201 |
0.63 |
|
| 1993 |
Kuech TF, Redwing JM, Huang J, Nayak S. Controlled Impurity Introduction In CVD: Chemical, Electrical, and Morphological Influences Mrs Proceedings. 334. DOI: 10.1557/Proc-334-189 |
0.515 |
|
| 1993 |
Yu LS, Guan ZF, Deng F, Liu QZ, Pappert SA, Yu PKL, Lau SS, Redwing J, Geisz J, Kuech TF, Kattelus H, Suni I. Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures Mrs Proceedings. 326: 251. DOI: 10.1557/Proc-326-251 |
0.561 |
|
| 1993 |
Nayak S, Redwing JM, Kuech TF, Phang Y, Savage DE, Lagally MG. X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers Mrs Proceedings. 312. DOI: 10.1557/Proc-312-137 |
0.506 |
|
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