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Ri-an Zhao, Ph.D. - Publications

Affiliations: 
2002 University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Optics Physics
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Tzeng SY, Cich MJ, Zhao R, Feick H, Weber ER. Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Applied Physics Letters. 82: 1063-1065. DOI: 10.1063/1.1555710  0.667
2002 Zhao RA, Cich MJ, Specht P, Weber ER. In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs Applied Physics Letters. 80: 2060-2062. DOI: 10.1063/1.1463215  0.714
2001 Zhukov AE, Zhao R, Specht P, Ustinov VM, Anders A, Weber ER. MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source Semiconductor Science and Technology. 16: 413-419. DOI: 10.1088/0268-1242/16/5/323  0.508
2001 Gebauer J, Zhao R, Specht P, Weber ER, Börner F, Redmann F, Krause-Rehberg R. Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures Applied Physics Letters. 79: 4313-4315. DOI: 10.1063/1.1427150  0.661
2001 Gebauer J, Zhao R, Specht P, Börner F, Redmann F, Krause-Rehberg R, Weber ER. Native point defects in non-stoichiometric GaAs doped with beryllium Physica B-Condensed Matter. 308: 812-815. DOI: 10.1016/S0921-4526(01)00810-9  0.569
2001 Specht P, Cich MJ, Zhao R, Gebauer J, Luysberg M, Weber ER. Incorporation and thermal stability of defects in highly p-conductive non-stoichiometric GaAs: Be Physica B: Condensed Matter. 308: 808-811. DOI: 10.1016/S0921-4526(01)00809-2  0.739
2001 Park Y, Cich MJ, Zhao R, Specht P, Feick H, Weber ER. AFM study of lattice matched and strained InGaAsN layers on GaAs Physica B: Condensed Matter. 308: 98-101. DOI: 10.1016/S0921-4526(01)00669-X  0.698
2000 Liu WK, Lubyshev DI, Specht P, Zhao R, Weber ER, Gebauer J, SpringThorpe AJ, Streater RW, Vijarnwannaluk S, Songprakob W, Zallen R. Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1594-1597. DOI: 10.1116/1.591434  0.618
2000 Park Y, Cich MJ, Zhao R, Specht P, Weber ER, Stach E, Nozaki S. Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1566-1571. DOI: 10.1116/1.591427  0.718
1999 Cich MJ, Zhao R, Park Y, Specht P, Weber ER. ELectrical Characterization of Beryllium Doped Low Temperature MBE Grown GaAs Mrs Proceedings. 570: 129. DOI: 10.1557/Proc-570-129  0.72
1999 Specht P, Lutz RC, Zhao R, Weber ER, Liu WK, Bacher K, Towner FJ, Stewart TR, Luysberg M. Improvement of molecular beam epitaxy-grown low-temperature GaAs through p doping with Be and C Journal of Vacuum Science & Technology B. 17: 1200-1204. DOI: 10.1116/1.590747  0.655
1999 Lutz RC, Specht P, Zhao R, Lam OH, Borner F, Gebauer J, Krause-Rehberg R, Weber ER. Native point defect analysis in non-stoichiometric GaAs: An annealing study Physica B: Condensed Matter. 273: 722-724. DOI: 10.1016/S0921-4526(99)00621-3  0.64
1999 Liu WK, Bacher K, Towner FJ, Stewart TR, Reed C, Specht P, Lutz RC, Zhao R, Weber ER. Properties of C-doped LT-GaAs grown by MBE using CBr4 Journal of Crystal Growth. 201202: 217-220. DOI: 10.1016/S0022-0248(98)01325-6  0.642
1998 Lutz RC, Specht P, Zhao R, Jeong S, Bokor J, Weber ER. Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping Mrs Proceedings. 510: 55. DOI: 10.1557/Proc-510-55  0.533
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