Ezra B. Bussmann, Ph.D.
Affiliations: | 2006 | University of Utah, Salt Lake City, UT |
Area:
Condensed Matter PhysicsGoogle:
"Ezra Bussmann"Parents
Sign in to add mentor| Clayton C. Williams | grad student | 2006 | University of Utah | |
| (Single electron tunneling force microscopy.) | ||||
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Publications
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| Katzenmeyer AM, Luk TS, Bussmann E, et al. (2020) Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry Journal of Materials Research. 35: 2098-2105 |
| Lu P, Anderson E, Schmucker S, et al. (2020) Accessing Atomic-scale Phosphorus Dopant Distribution in Precise Silicon Devices by Advanced STEM Imaging and Spectroscopy Microscopy and Microanalysis. 1-3 |
| Bussmann E, Gamble JK, Koepke JC, et al. (2018) Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices Physical Review Materials. 2 |
| Yitamben EN, Butera RE, Swartzentruber BS, et al. (2017) Heterogeneous nucleation of pits via step pinning during Si(100) homoepitaxy New Journal of Physics. 19: 113023 |
| Ward DR, Marshall MT, Campbell DM, et al. (2017) All-optical lithography process for contacting nanometer precision donor devices Applied Physics Letters. 111: 193101 |
| Scrymgeour D, Baca A, Fishgrab K, et al. (2017) Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures Applied Surface Science. 423: 1097-1102 |
| Leroy F, Passanante T, Cheynis F, et al. (2016) Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001) Applied Physics Letters. 108 |
| Bussmann E, Rudolph M, Subramania GS, et al. (2015) Scanning capacitance microscopy registration of buried atomic-precision donor devices. Nanotechnology. 26: 085701 |
| Rudolph M, Carr SM, Subramania G, et al. (2014) Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode Applied Physics Letters. 105 |
| Cheynis F, Bussmann E, Leroy F, et al. (2012) Stress effects on solid-state dewetting of nano-thin films International Journal of Nanotechnology. 9: 396-411 |