Colin Edmunds, Ph.D.

2014 Physics and Astronomy Purdue University, West Lafayette, IN, United States 
Condensed Matter Physics, Optics Physics
"Colin Edmunds"


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Oana Malis grad student 2014 Purdue
 (Near- and far-infrared intersubband transitions in polar and non-polar III-nitrides.)
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Shirazi-HD M, Turkmeneli K, Liu S, et al. (2016) Dramatic enhancement of near-infrared intersubband absorption in c-plane AlInN/GaN superlattices Applied Physics Letters. 108
Grier A, Valavanis A, Edmunds C, et al. (2015) Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices Journal of Applied Physics. 118
Malis O, Edmunds C, Li D, et al. (2014) Quantum band engineering of nitride semiconductors for infrared lasers Proceedings of Spie - the International Society For Optical Engineering. 9002
Edmunds C, Shao J, Shirazi-Hd M, et al. (2014) Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells Applied Physics Letters. 105
Edmunds C, Tang L, Cervantes M, et al. (2013) Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities Physical Review B - Condensed Matter and Materials Physics. 88
Li D, Shao J, Tang L, et al. (2013) Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures Semiconductor Science and Technology. 28
Shao J, Zakharov DN, Edmunds C, et al. (2013) Homogeneous AlGaN/GaN superlattices grown on free-standing (1 1 ̄00) GaN substrates by plasma-assisted molecular beam epitaxy Applied Physics Letters. 103
Shao J, Tang L, Edmunds C, et al. (2013) Surface morphology evolution of m-plane (11̄00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature Journal of Applied Physics. 114
Edmunds C, Tang L, Shao J, et al. (2012) Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location Applied Physics Letters. 101
Li D, Tang L, Edmunds C, et al. (2012) Repeatable low-temperature negative-differential resistance from Al 0.18Ga 0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates Applied Physics Letters. 100
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