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Byron Ho, Ph.D. - Publications

Affiliations: 
2012 Electrical Engineering & Computer Sciences University of California, Berkeley, Berkeley, CA, United States 
Area:
Nanofabrication
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Ho B, Xu N, Wood B, Tran V, Chopra S, Kim Y, Nguyen B, Bonnin O, Mazure C, Kuppurao S, Chang C, Liu TK. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence Ieee Transactions On Electron Devices. 60: 153-158. DOI: 10.1109/Ted.2012.2230175  0.592
2013 Ho B, Sun X, Shin C, Liu TK. Design Optimization of Multigate Bulk MOSFETs Ieee Transactions On Electron Devices. 60: 28-33. DOI: 10.1109/Ted.2012.2224870  0.637
2012 Ho B, Sun X, Xu N, Sako T, Maekawa K, Tomoyasu M, Akasaka Y, Bonnin O, Nguyen B, Liu TK. First Demonstration of Quasi-Planar Segmented-Channel MOSFET Design for Improved Scalability Ieee Transactions On Electron Devices. 59: 2273-2276. DOI: 10.1109/Ted.2012.2201721  0.621
2012 Matheu P, Ho B, Jacobson ZA, Liu TJK. Planar GeOI TFET performance improvement with back biasing Ieee Transactions On Electron Devices. 59: 1629-1635. DOI: 10.1109/Ted.2012.2191410  0.647
2012 Xu N, Ho B, Choi M, Moroz V, Liu TJK. Effectiveness of stressors in aggressively scaled FinFETs Ieee Transactions On Electron Devices. 59: 1592-1598. DOI: 10.1109/Ted.2012.2189861  0.55
2012 Ho B, Xu N, Liu TK. pMOSFET Performance Enhancement With Strained Channels Ieee Transactions On Electron Devices. 59: 1468-1474. DOI: 10.1109/Ted.2012.2186576  0.515
2012 Xu N, Ho B, Andrieu F, Smith L, Nguyen B, Weber O, Poiroux T, Faynot O, Liu TK. Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs Ieee Electron Device Letters. 33: 318-320. DOI: 10.1109/Led.2011.2179113  0.52
2011 Ho B, Xu N, Liu TK. Study of High-Performance Ge pMOSFET Scaling Accounting for Direct Source-to-Drain Tunneling Ieee Transactions On Electron Devices. 58: 2895-2902. DOI: 10.1109/Ted.2011.2159008  0.6
2010 Ho B, Vega R, King-Liu T. Study of Germanium Epitaxial Recrystallization on Bulk-Si Substrates Mrs Proceedings. 1252. DOI: 10.1557/Proc-1252-I07-03  0.575
2010 Lee D, Tran H, Ho B, Liu TK. Electrical Characterization of Etch Rate for Micro- and Nano-Scale Gap Formation Ieee\/Asme Journal of Microelectromechanical Systems. 19: 1260-1263. DOI: 10.1109/Jmems.2010.2067432  0.559
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