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Roberto C. Myers, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
 2008- Ohio State University, Columbus, Columbus, OH 
Area:
semiconductor spintronics
Website:
https://myersgroup.engineering.osu.edu/
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88 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Verma D, Adnan MMR, Rahman MW, Rajan S, Myers RC. Local electric field measurement in GaN diodes by exciton Franz–Keldysh photocurrent spectroscopy Applied Physics Letters. 116: 202102. DOI: 10.1063/1.5144778  0.528
2019 Jamison JS, Yang Z, Giles BL, Brangham JT, Wu G, Hammel PC, Yang F, Myers RC. Long lifetime of thermally excited magnons in bulk yttrium iron garnet Physical Review B. 100. DOI: 10.1103/Physrevb.100.134402  0.57
2019 Jamison JS, May BJ, Deitz JI, Chien S, McComb DW, Grassman TJ, Windl W, Myers RC. Ferromagnetic Epitaxial μ-Fe2O3 on β-Ga2O3: A New Monoclinic Form of Fe2O3 Crystal Growth & Design. 19: 4205-4211. DOI: 10.1021/Acs.Cgd.9B00029  0.531
2018 Kim SK, Myers R, Tserkovnyak Y. Nonlocal Spin Transport Mediated by a Vortex Liquid in Superconductors. Physical Review Letters. 121: 187203. PMID 30444405 DOI: 10.1103/Physrevlett.121.187203  0.557
2018 Deitz JI, Sarwar ATMG, Carnevale SD, Grassman TJ, Myers RC, McComb DW. Nano-Cathodoluminescence Measurement of Asymmetric Carrier Trapping and Radiative Recombination in GaN and InGaN Quantum Disks. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 24: 93-98. PMID 29699596 DOI: 10.1017/S143192761800017X  0.452
2018 May BJ, Belz MR, Ahamed A, Sarwar ATMG, Selcu CM, Myers RC. Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency. Acs Nano. PMID 29641896 DOI: 10.1021/Acsnano.8B00538  0.308
2018 May BJ, Selcu CM, Sarwar ATMG, Myers RC. Nanoscale current uniformity and injection efficiency of nanowire light emitting diodes Applied Physics Letters. 112: 093107. DOI: 10.1063/1.5020734  0.301
2018 Golam Sarwar ATM, Leung B, Wang GT, Myers RC. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays Crystal Growth & Design. 18: 1191-1197. DOI: 10.1021/Acs.Cgd.7B01725  0.424
2017 Giles BL, Yang Z, Jamison JS, Gomez-Perez JM, Vélez S, Hueso LE, Casanova F, Myers RC. Thermally driven long-range magnon spin currents in yttrium iron garnet due to intrinsic spin Seebeck effect Physical Review B. 96. DOI: 10.1103/Physrevb.96.180412  0.577
2017 Yang Z, Codecido EA, Marquez J, Zheng Y, Heremans JP, Myers RC. Scalable Nernst thermoelectric power using a coiled galfenol wire Aip Advances. 7: 095017. DOI: 10.1063/1.5003611  0.416
2017 Lee CH, Krishnamoorthy S, O'Hara DJ, Brenner MR, Johnson JM, Jamison JS, Myers RC, Kawakami RK, Hwang J, Rajan S. Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates Journal of Applied Physics. 121: 094302. DOI: 10.1063/1.4977697  0.612
2017 May BJ, Anderson PM, Myers RC. Three-dimensional lattice matching of epitaxially embedded nanoparticles Journal of Crystal Growth. 459: 209-214. DOI: 10.1016/J.Jcrysgro.2016.11.042  0.301
2016 Sarwar AT, May BJ, Chisholm MF, Duscher GJ, Myers RC. Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence. Nanoscale. PMID 27019949 DOI: 10.1039/C6Nr00132G  0.454
2016 May BJ, Sarwar ATMG, Myers RC. Nanowire LEDs grown directly on flexible metal foil Applied Physics Letters. 108. DOI: 10.1063/1.4945419  0.417
2016 Sarwar ATMG, Yang F, Esser BD, Kent TF, McComb DW, Myers RC. Self-assembled InN micro-mushrooms by upside-down pendeoepitaxy Journal of Crystal Growth. 443: 90-97. DOI: 10.1016/J.Jcrysgro.2016.03.030  0.421
2016 Mishra U, Huffaker D, Choquette K, Palacios T, Matioli E, Myers R, Rajan S, Wang H. Compound Semiconductors Physica Status Solidi (a) Applications and Materials Science. 213: 850. DOI: 10.1002/Pssa.201670627  0.469
2015 Sarwar AG, Carnevale SD, Yang F, Kent TF, Jamison JJ, McComb DW, Myers RC. Semiconductor Nanowire Light-Emitting Diodes Grown on Metal: A Direction Toward Large-Scale Fabrication of Nanowire Devices. Small (Weinheim An Der Bergstrasse, Germany). PMID 26307552 DOI: 10.1002/Smll.201501909  0.429
2015 Jin H, Restrepo OD, Antolin N, Boona SR, Windl W, Myers RC, Heremans JP. Phonon-induced diamagnetic force and its effect on the lattice thermal conductivity. Nature Materials. 14: 601-6. PMID 25799325 DOI: 10.1038/Nmat4247  0.642
2015 Erhard N, Sarwar AT, Yang F, McComb DW, Myers RC, Holleitner AW. Optical control of internal electric fields in band gap-graded InGaN nanowires. Nano Letters. 15: 332-8. PMID 25487601 DOI: 10.1021/Nl503616W  0.418
2015 Yang Z, Kent TF, Yang J, Jin H, Heremans JP, Myers RC. Anisotropic defect-induced ferromagnetism and transport in Gd-doped GaN two-dimensional electron gasses Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.224416  0.543
2015 Giles BL, Yang Z, Jamison JS, Myers RC. Long-range pure magnon spin diffusion observed in a nonlocal spin-Seebeck geometry Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.224415  0.565
2015 Jin H, Boona SR, Yang Z, Myers RC, Heremans JP. Effect of the magnon dispersion on the longitudinal spin Seebeck effect in yttrium iron garnets Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.054436  0.514
2015 Sarwar ATMG, May BJ, Deitz JI, Grassman TJ, McComb DW, Myers RC. Tunnel junction enhanced nanowire ultraviolet light emitting diodes Applied Physics Letters. 107. DOI: 10.1063/1.4930593  0.415
2015 Golam Sarwar ATM, Carnevale SD, Kent TF, Yang F, McComb DW, Myers RC. Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN Applied Physics Letters. 106. DOI: 10.1063/1.4906449  0.443
2015 Golam Sarwar ATM, Carnevale SD, Kent TF, Laskar MR, May BJ, Myers RC. Molecular beam epitaxy of InN nanowires on Si Journal of Crystal Growth. 428: 59-70. DOI: 10.1016/J.Jcrysgro.2015.07.024  0.752
2015 Sarwar ATMG, May BJ, Myers RC. Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDs Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532735  0.428
2014 Kent TF, Carnevale SD, Sarwar AT, Phillips PJ, Klie RF, Myers RC. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa₁-xN active regions. Nanotechnology. 25: 455201. PMID 25327762 DOI: 10.1088/0957-4484/25/45/455201  0.303
2014 Laskar MR, Nath DN, Ma L, Lee EW, Lee CH, Kent T, Yang Z, Mishra R, Roldan MA, Idrobo JC, Pantelides ST, Pennycook SJ, Myers RC, Wu Y, Rajan S. P-type doping of MoS2 thin films using Nb Applied Physics Letters. 104. DOI: 10.1063/1.4867197  0.778
2014 Boona SR, Myers RC, Heremans JP. Spin caloritronics Energy and Environmental Science. 7: 885-910. DOI: 10.1039/c3ee43299h  0.493
2014 Williams REA, Carnevale SD, Kent TF, Stowe DJ, Myers RC, McComb DW. Electron energy loss spectroscopy and localized cathodoluminescence characterization of GaN quantum discs Microscopy and Microanalysis. 20: 578-579. DOI: 10.1017/S1431927614004619  0.345
2014 Jin H, Yang Z, Myers RC, Heremans JP. Spin-Seebeck like signal in ferromagnetic bulk metallic glass without platinum contacts Solid State Communications. 198: 40-44. DOI: 10.1016/J.Ssc.2013.12.027  0.52
2013 Carnevale SD, Kent TF, Phillips PJ, Sarwar AT, Selcu C, Klie RF, Myers RC. Mixed polarity in polarization-induced p-n junction nanowire light-emitting diodes. Nano Letters. 13: 3029-35. PMID 23756087 DOI: 10.1021/Nl400200G  0.439
2013 Phillips PJ, Carnevale SD, Kumar R, Myers RC, Klie RF. Full-scale characterization of UVLED Al(x)Ga(1-x)N nanowires via advanced electron microscopy. Acs Nano. 7: 5045-51. PMID 23675609 DOI: 10.1021/Nn4021407  0.45
2013 Krishnamoorthy S, Kent TF, Yang J, Park PS, Myers RC, Rajan S. GdN nanoisland-based GaN tunnel junctions. Nano Letters. 13: 2570-5. PMID 23662669 DOI: 10.1021/Nl4006723  0.601
2013 Shao Y, Carnevale SD, Sarwar ATMG, Myers RC, Lu W. Single nanowire AlN/GaN double barrier resonant tunneling diodes with bipolar tunneling at room and cryogenic temperatures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 31. DOI: 10.1116/1.4829432  0.444
2013 Chapler BC, Mack S, Myers RC, Frenzel A, Pursley BC, Burch KS, Dattelbaum AM, Samarth N, Awschalom DD, Basov DN. Ferromagnetism and infrared electrodynamics of Ga1-xMn xAs Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.205314  0.716
2013 Yang J, Yang F, Kent TF, Mills MJ, Myers RC. Semipolar InN/AlN multiple quantum wells on {10 1 ̄ 5} faceted AlN on silicon Applied Physics Letters. 103. DOI: 10.1063/1.4821069  0.452
2013 Kent TF, Carnevale SD, Myers RC. Atomically sharp 318 nm Gd:AlGaN ultraviolet light emitting diodes on Si with low threshold voltage Applied Physics Letters. 102. DOI: 10.1063/1.4807385  0.314
2013 Laskar MR, Carnevale SD, Sarwar ATMG, Phillips PJ, Mills MJ, Myers RC. Molecular beam epitaxy of graded-composition ingan nanowires Journal of Electronic Materials. 42: 863-867. DOI: 10.1007/S11664-013-2544-9  0.751
2012 Jaworski CM, Myers RC, Johnston-Halperin E, Heremans JP. Giant spin Seebeck effect in a non-magnetic material. Nature. 487: 210-3. PMID 22785317 DOI: 10.1038/Nature11221  0.777
2012 Carnevale SD, Kent TF, Phillips PJ, Mills MJ, Rajan S, Myers RC. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. Nano Letters. 12: 915-20. PMID 22268600 DOI: 10.1021/Nl203982P  0.636
2012 Carnevale SD, Kent TF, Phillips PJ, Golam Sarwar ATM, Klie RF, Rajan S, Myers RC. Graded nanowire ultraviolet LEDs by polarization engineering Proceedings of Spie - the International Society For Optical Engineering. 8467. DOI: 10.1117/12.970450  0.61
2012 Myers R, Heremans J. Spin-Heat Vision Physics. 5. DOI: 10.1103/Physics.5.29  0.503
2012 Kent TF, Yang J, Yang L, Mills MJ, Myers RC. Epitaxial ferromagnetic nanoislands of cubic GdN in hexagonal GaN Applied Physics Letters. 100. DOI: 10.1063/1.3702843  0.438
2012 Carnevale SD, Marginean C, Phillips PJ, Kent TF, Sarwar ATMG, Mills MJ, Myers RC. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon Applied Physics Letters. 100. DOI: 10.1063/1.3701586  0.452
2012 Zhang Z, Hurni CA, Arehart AR, Yang J, Myers RC, Speck JS, Ringel SA. Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3682528  0.415
2011 Jaworski CM, Yang J, Mack S, Awschalom DD, Myers RC, Heremans JP. Spin-seebeck effect: a phonon driven spin distribution. Physical Review Letters. 106: 186601. PMID 21635114 DOI: 10.1103/PhysRevLett.106.186601  0.751
2011 Carnevale SD, Yang J, Phillips PJ, Mills MJ, Myers RC. Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes. Nano Letters. 11: 866-71. PMID 21265558 DOI: 10.1021/Nl104265U  0.439
2011 Chapler BC, Myers RC, MacK S, Frenzel A, Pursley BC, Burch KS, Singley EJ, Dattelbaum AM, Samarth N, Awschalom DD, Basov DN. Infrared probe of the insulator-to-metal transition in Ga 1-xMnxAs and Ga1-xBexAs Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.081203  0.687
2010 Jaworski CM, Yang J, Mack S, Awschalom DD, Heremans JP, Myers RC. Observation of the spin-Seebeck effect in a ferromagnetic semiconductor. Nature Materials. 9: 898-903. PMID 20871608 DOI: 10.1038/Nmat2860  0.78
2010 Wilson MJ, Zhu M, Myers RC, Awschalom DD, Schiffer P, Samarth N. Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.045319  0.608
2009 Li X, Myers RC, Mendoza FM, Awschalom DD, Samarth N. Polarized emission from twin microdisk photonic molecules Ieee Journal of Quantum Electronics. 45: 932-936. DOI: 10.1109/Jqe.2009.2015893  0.716
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors. Nature Materials. 7: 203-8. PMID 18278049 DOI: 10.1038/Nmat2123  0.742
2008 MacK S, Myers RC, Heron JT, Gossard AC, Awschalom DD. Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs Applied Physics Letters. 92. DOI: 10.1063/1.2927481  0.694
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors (Nature Materials (2008) 7 (203-208) ) Nature Materials. 7: 339. DOI: 10.1038/Nmat2158  0.675
2008 Mikkelsen MH, Myers RC, Fuchs GD, Awschalom DD. Chapter 1 Single Spin Coherence in Semiconductors Semiconductors and Semimetals. 82: 1-44. DOI: 10.1016/S0080-8784(08)00001-X  0.72
2007 Sheu BL, Myers RC, Tang JM, Samarth N, Awschalom DD, Schiffer P, Flatté ME. Onset of Ferromagnetism in Low-Doped Ga1-xMnxAs. Physical Review Letters. 99: 227205. PMID 18233322 DOI: 10.1103/Physrevlett.99.227205  0.598
2007 Stern NP, Myers RC, Poggio M, Gossard AC, Awschalom DD. Confinement engineering of s-d exchange interactions in Ga1-x Mnx As/Aly Ga1-y As quantum wells Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045329  0.813
2007 Holleitner AW, Sih V, Myers RC, Gossard AC, Awschalom DD. Dimensionally constrained D'yakonov-Perel' spin relaxation in n-lnGaAs channels: Transition from 2D to 1D New Journal of Physics. 9. DOI: 10.1088/1367-2630/9/9/342  0.789
2007 Ghosh S, Mendoza FM, Myers RC, Gossard AC, Awschalom DD, Wang WH, Li X, Samarth N. Enhancement of spin coherence in microdisk lasers Optics Infobase Conference Papers.  0.753
2006 Sih V, Lau WH, Myers RC, Horowitz VR, Gossard AC, Awschalom DD. Generating spin currents in semiconductors with the spin Hall effect. Physical Review Letters. 97: 096605. PMID 17026386 DOI: 10.1103/Physrevlett.97.096605  0.823
2006 Holleitner AW, Sih V, Myers RC, Gossard AC, Awschalom DD. Suppression of spin relaxation in submicron InGaAs wires. Physical Review Letters. 97: 036805. PMID 16907530 DOI: 10.1103/Physrevlett.97.036805  0.797
2006 Ghosh S, Wang WH, Mendoza FM, Myers RC, Li X, Samarth N, Gossard AC, Awschalom DD. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers. Nature Materials. 5: 261-4. PMID 16565713 DOI: 10.1038/Nmat1587  0.838
2006 Bloom FL, Young AC, Myers RC, Brown ER, Gossard AC, Gwinn EG. Tunneling through MnAs particles at a GaAs p+ n+ junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1639-1643. DOI: 10.1116/1.2190680  0.45
2006 Myers RC, Sheu BL, Jackson AW, Gossard AC, Schiffer P, Samarth N, Awschalom DD. Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.155203  0.678
2006 Lau WH, Sih V, Stern NP, Myers RC, Buell DA, Gossard AC, Awschalom DD. Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358931  0.834
2006 Knotz H, Holleitner AW, Stephens J, Myers RC, Awschalom DD. Spatial imaging and mechanical control of spin coherence in strained GaAs epilayers Applied Physics Letters. 88. DOI: 10.1063/1.2210794  0.807
2006 Poggio M, Myers RC, Steeves GM, Stern NP, Gossard AC, Awschalom DD. Nuclear and ion spins in semiconductor nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 35: 264-271. DOI: 10.1016/J.Physe.2006.08.032  0.851
2005 Myers RC, Poggio M, Stern NP, Gossard AC, Awschalom DD. Antiferromagnetic s-d exchange coupling in GaMnAs. Physical Review Letters. 95: 017204. PMID 16090651 DOI: 10.1103/Physrevlett.95.017204  0.824
2005 Myers RC, Poggio M, Stern NP, Gossard AC, Awschalom DD. Erratum: Antiferromagnetics−dExchange Coupling in GaMnAs [Phys. Rev. Lett.95, 017204 (2005)] Physical Review Letters. 95. DOI: 10.1103/Physrevlett.95.229902  0.759
2005 Poggio M, Myers RC, Stern NP, Gossard AC, Awschalom DD. Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.235313  0.843
2005 Myers RC, Ku KC, Li X, Samarth N, Awschalom DD. Optoelectronic control of spin dynamics at near-terahertz frequencies in magnetically doped quantum wells Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.041302  0.716
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel Applied Physics Letters. 87. DOI: 10.1063/1.1994930  0.792
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electron spin interferometry using a semiconductor ring structure Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1906301  0.813
2005 Holleitner AW, Knotz H, Myers RC, Gossard AC, Awschalom DD. Manipulating a domain wall in (Ga,Mn)As Journal of Applied Physics. 97. DOI: 10.1063/1.1849055  0.779
2005 Sih V, Myers RC, Kato YK, Lau WH, Gossard AC, Awschalom DD. Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases Nature Physics. 1: 31-35. DOI: 10.1038/Nphys009  0.848
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Observation of the spin Hall effect in semiconductors. Science (New York, N.Y.). 306: 1910-3. PMID 15539563 DOI: 10.1126/Science.1105514  0.809
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Current-induced spin polarization in strained semiconductors. Physical Review Letters. 93: 176601. PMID 15525098 DOI: 10.1103/Physrevlett.93.176601  0.804
2004 Kato Y, Myers RC, Gossard AC, Awschalom DD. Coherent spin manipulation without magnetic fields in strained semiconductors. Nature. 427: 50-3. PMID 14702080 DOI: 10.1038/Nature02202  0.819
2004 Sih V, Lau WH, Myers RC, Gossard AC, Flatté ME, Awschalom DD. Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 70: 1-4. DOI: 10.1103/Physrevb.70.161313  0.833
2004 Poggio M, Steeves GM, Myers RC, Stern NP, Gossard AC, Awschalom DD. Spin transfer and coherence in coupled quantum wells Physical Review B - Condensed Matter and Materials Physics. 70: 121305-1-121305-4. DOI: 10.1103/Physrevb.70.121305  0.838
2004 Myers RC, Gossard AC, Awschalom DD. Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier Physical Review B - Condensed Matter and Materials Physics. 69: 161305-1-161305-4. DOI: 10.1103/Physrevb.69.161305  0.743
2004 Holleitner AW, Knotz H, Myers RC, Gossard AC, Awschalom DD. Pinning a domain wall in (Ga, Mn)As with focused ion beam lithography Applied Physics Letters. 85: 5622-5624. DOI: 10.1063/1.1829797  0.776
2003 Poggio M, Steeves GM, Myers RC, Kato Y, Gossard AC, Awschalom DD. Local manipulation of nuclear spin in a semiconductor quantum well. Physical Review Letters. 91: 207602. PMID 14683395 DOI: 10.1103/PhysRevLett.91.207602  0.817
2003 Kato Y, Myers RC, Driscoll DC, Gossard AC, Levy J, Awschalom DD. Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation. Science (New York, N.Y.). 299: 1201-4. PMID 12543982 DOI: 10.1126/Science.1080880  0.801
2003 Kato Y, Myers RC, Driscoll DC, Gossard AC, Levy J, Awschalom DD. Gigahertz manipulation of electron spins in semiconductor nanostructures Ieee International Symposium On Compound Semiconductors, Proceedings. 2003: 3. DOI: 10.1109/ISCS.2003.1239876  0.78
2003 Johnston-Halperin E, Schuller JA, Gallinat CS, Kreutz TC, Myers RC, Kawakami RK, Knotz H, Gossard AC, Awschalom DD. Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures Physical Review B - Condensed Matter and Materials Physics. 68: 1653281-1653289. DOI: 10.1103/Physrevb.68.165328  0.789
2003 Ku KC, Potashnik SJ, Wang RF, Chun SH, Schiffer P, Samarth N, Seong MJ, Mascarenhas A, Johnston-Halperin E, Myers RC, Gossard AC, Awschalom DD. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers Applied Physics Letters. 82: 2302-2304. DOI: 10.1063/1.1564285  0.743
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