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Xia Hong, Ph.D. - Publications

Affiliations: 
1998-2006 Engineering and Applied Science Yale University, New Haven, CT 
 2006-2010 Physics Pennsylvania State University, State College, PA, United States 
 2011- Physics and Astronomy University of Nebrsaka-Lincoln 
Area:
Experimental Condensed Matter Physics
Website:
http://www.physics.unl.edu/~xhong/
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Year Citation  Score
2022 Wang J, Ahmadi Z, Lujan D, Choe J, Taniguchi T, Watanabe K, Li X, Shield JE, Hong X. Physical Vapor Transport Growth of Antiferromagnetic CrCl Flakes Down to Monolayer Thickness. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2203548. PMID 36453569 DOI: 10.1002/advs.202203548  0.326
2020 Li D, Huang X, Xiao Z, Chen H, Zhang L, Hao Y, Song J, Shao DF, Tsymbal EY, Lu Y, Hong X. Polar coupling enabled nonlinear optical filtering at MoS/ferroelectric heterointerfaces. Nature Communications. 11: 1422. PMID 32184400 DOI: 10.1038/S41467-020-15191-2  0.319
2020 Ryu H, Xu K, Li D, Hong X, Zhu W. Empowering 2D nanoelectronics via ferroelectricity Applied Physics Letters. 117: 080503. DOI: 10.1063/5.0019555  0.368
2020 Zhang L, Jiang X, Xu X, Hong X. Abrupt enhancement of spin–orbit scattering time in ultrathin semimetallic SrIrO3 close to the metal–insulator transition Apl Materials. 8: 51108. DOI: 10.1063/5.0005330  0.418
2020 Evans PE, Komesu T, Zhang L, Shao D, Yost AJ, Kumar S, Schwier EF, Shimada K, Tsymbal EY, Hong X, Dowben PA. Detection of decoupled surface and bulk states in epitaxial orthorhombic SrIrO3 thin films Aip Advances. 10: 045027. DOI: 10.1063/1.5135941  0.419
2019 Li D, Wei C, Song J, Huang X, Wang F, Liu K, Xiong W, Hong X, Cui B, Feng A, Jiang L, Lu YF. Anisotropic Enhancement of Second Harmonic Generation in Monolayer and Bilayer MoS by Integrating with TiO Nanowires. Nano Letters. PMID 31136188 DOI: 10.1021/Acs.Nanolett.9B01933  0.312
2019 Rajapitamahuni A, Tao LL, Hao Y, Song J, Xu X, Tsymbal EY, Hong X. Ferroelectric polarization control of magnetic anisotropy in PbZr0.2Ti0.8O3 / La0.8Sr0.2MnO3 heterostructures Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.021401  0.37
2018 Chen X, Zhang X, Han MG, Zhang L, Zhu Y, Xu X, Hong X. Magnetotransport Anomaly in Room-Temperature Ferrimagnetic NiCo O Thin Films. Advanced Materials (Deerfield Beach, Fla.). e1805260. PMID 30489660 DOI: 10.1002/Adma.201805260  0.474
2018 Song J, Xiao Z, Chen B, Prockish S, Chen X, Rajapitamahuni A, Zhang L, Huang J, Hong X. Enhanced Piezoelectric Response in Hybrid Lead Halide Perovskite Thin Films via Interfacing with Ferroelectric PbZr0.2Ti0.8O3. Acs Applied Materials & Interfaces. PMID 29733190 DOI: 10.1021/Acsami.8B03403  0.431
2018 Li D, Xiao Z, Mu S, Wang F, Liu Y, Song J, Huang X, Jiang L, Xiao J, Liu L, Ducharme S, Cui B, Hong X, Jiang L, Silvain JF, et al. A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals. Nano Letters. PMID 29351373 DOI: 10.1021/Acs.Nanolett.7B05473  0.341
2018 Zhang X, N'Diaye AT, Jiang X, Zhang X, Yin Y, Chen X, Hong X, Xu X, Dowben PA. Indications of magnetic coupling effects in spin cross-over molecular thin films. Chemical Communications (Cambridge, England). PMID 29319081 DOI: 10.1039/C7Cc08246K  0.353
2018 Dowben PA, Binek C, Zhang K, Wang L, Mei W, Bird JP, Singisetti U, Hong X, Wang KL, Nikonov D. Towards a Strong Spin–Orbit Coupling Magnetoelectric Transistor Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 4: 1-9. DOI: 10.1109/Jxcdc.2018.2809640  0.345
2017 Moghadam R, Xiao Z, Ahmadi-Majlan K, Grimley E, Bowden ME, Ong PV, Chambers SA, LeBeau J, Hong X, Sushko PV, Ngai J. An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor. Nano Letters. PMID 28876941 DOI: 10.1021/Acs.Nanolett.7B02947  0.445
2017 Xiao Z, Song J, Ferry DK, Ducharme S, Hong X. Ferroelectric-Domain-Patterning-Controlled Schottky Junction State in Monolayer MoS_{2}. Physical Review Letters. 118: 236801. PMID 28644638 DOI: 10.1103/Physrevlett.118.236801  0.318
2017 Li DW, Zou QM, Huang X, Rabiee Golgir H, Keramatnejad K, Song JF, Xiao ZY, Fan LS, Hong X, Jiang L, Silvain JF, Sun S, Lu YF. Controlled defect creation and removal in graphene and MoS2 monolayers. Nanoscale. PMID 28638906 DOI: 10.1039/C7Nr01712J  0.341
2017 Chen X, Zhang X, Koten MA, Chen H, Xiao Z, Zhang L, Shield JE, Dowben PA, Hong X. Interfacial Charge Engineering in Ferroelectric-Controlled Mott Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 28628278 DOI: 10.1002/Adma.201701385  0.397
2017 Cao S, Xiao Z, Kwan C, Zhang K, Bird JP, Wang L, Mei W, Hong X, Dowben PA. Moving towards the magnetoelectric graphene transistor Applied Physics Letters. 111: 182402. DOI: 10.1063/1.4999643  0.366
2017 Li D, Xiao Z, Golgir HR, Jiang L, Singh VR, Keramatnejad K, Smith KE, Hong X, Jiang L, Silvain JF, Lu Y. Large‐Area 2D/3D MoS2–MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors Advanced Electronic Materials. 3: 1600335. DOI: 10.1002/Aelm.201600335  0.333
2016 Lu H, Wang B, Li T, Lipatov A, Lee H, Rajapitamahuni A, Xu R, Hong X, Farokhipoor S, Martin LW, Eom CB, Chen LQ, Sinitskii A, Gruverman A. Nanodomain Engineering in Ferroelectric Capacitors with Graphene Electrodes. Nano Letters. PMID 27662071 DOI: 10.1021/Acs.Nanolett.6B02963  0.362
2016 Rajapitamahuni A, Zhang L, Koten MA, Singh VR, Burton JD, Tsymbal EY, Shield JE, Hong X. Giant Enhancement of Magnetic Anisotropy in Ultrathin Manganite Films via Nanoscale 1D Periodic Depth Modulation. Physical Review Letters. 116: 187201. PMID 27203341 DOI: 10.1103/Physrevlett.116.187201  0.425
2016 Hong X. Emerging ferroelectric transistors with nanoscale channel materials: the possibilities, the limitations. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 103003. PMID 26881391 DOI: 10.1088/0953-8984/28/10/103003  0.427
2015 Zhang L, Gardner HJ, Chen XG, Singh VR, Hong X. Strain induced modulation of the correlated transport in epitaxial Sm0.5Nd0.5NiO3 thin films. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 132201. PMID 25779981 DOI: 10.1088/0953-8984/27/13/132201  0.439
2015 Zhang L, Chen XG, Gardner HJ, Koten MA, Shield JE, Hong X. Effect of strain on ferroelectric field effect in strongly correlated oxide Sm0.5Nd0.5NiO3 Applied Physics Letters. 107. DOI: 10.1063/1.4934182  0.403
2014 Xiao Z, Hamblin J, Poddar S, Ducharme S, Paruch P, Hong X. Effect of thermal annealing on ferroelectric domain structures in poly(vinylidene-fluoride-trifluorethylene) Langmuir-Blodgett thin films Journal of Applied Physics. 116. DOI: 10.1063/1.4891396  0.329
2014 Singh VR, Zhang L, Rajapitamahuni AK, Devries N, Hong X. Nonlinear transport in nanoscale phase separated colossal magnetoresistive oxide thin films Journal of Applied Physics. 116. DOI: 10.1063/1.4890605  0.473
2013 Rajapitamahuni A, Hoffman J, Ahn CH, Hong X. Examining graphene field effect sensors for ferroelectric thin film studies. Nano Letters. 13: 4374-9. PMID 23924380 DOI: 10.1021/Nl402204T  0.739
2013 Xiao Z, Poddar S, Ducharme S, Hong X. Domain wall roughness and creep in nanoscale crystalline ferroelectric polymers Applied Physics Letters. 103. DOI: 10.1063/1.4820784  0.379
2012 Hong X, Zou K, Wang B, Cheng SH, Zhu J. Evidence for spin-flip scattering and local moments in dilute fluorinated graphene Physical Review Letters. 108. DOI: 10.1103/Physrevlett.108.226602  0.375
2012 Paruch P, Kolton AB, Hong X, Ahn CH, Giamarchi T. Thermal quench effects on ferroelectric domain walls Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.214115  0.54
2012 Hong X, Zou K, Dasilva AM, Ahn CH, Zhu J. Integrating functional oxides with graphene Solid State Communications. 152: 1365-1374. DOI: 10.1016/J.Ssc.2012.04.050  0.592
2011 Hoffman J, Hong X, Ahn CH. Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications. Nanotechnology. 22: 254014. PMID 21572192 DOI: 10.1088/0957-4484/22/25/254014  0.71
2011 Zou K, Hong X, Zhu J. Effective mass of electrons and holes in bilayer graphene: Electron-hole asymmetry and electron-electron interaction Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.085408  0.306
2011 Hong X, Cheng SH, Herding C, Zhu J. Colossal negative magnetoresistance in dilute fluorinated graphene Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.085410  0.422
2010 Zou K, Hong X, Keefer D, Zhu J. Deposition of high-quality HfO2 on graphene and the effect of remote oxide phonon scattering Physical Review Letters. 105. DOI: 10.1103/Physrevlett.105.126601  0.42
2010 Hong X, Hoffman J, Posadas A, Zou K, Ahn CH, Zhu J. Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O3 Applied Physics Letters. 97. DOI: 10.1063/1.3467450  0.766
2009 Hong X, Posadas A, Zou K, Ahn CH, Zhu J. High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides. Physical Review Letters. 102: 136808. PMID 19392391 DOI: 10.1103/Physrevlett.102.136808  0.763
2009 Hong X, Zou K, Zhu J. Quantum scattering time and its implications on scattering sources in graphene Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.241415  0.316
2009 Naftalis N, Bason Y, Hoffman J, Hong X, Ahn CH, Klein L. Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La0.7 Ca0.3 MnO3 Journal of Applied Physics. 106. DOI: 10.1063/1.3176934  0.728
2007 Yau JB, Hong X, Posadas A, Ahn CH, Gao W, Altman E, Bason Y, Klein L, Sidorov M, Krivokapic Z. Anisotropic magnetoresistance in colossal magnetoresistive La1-x Srx MnO3 thin films Journal of Applied Physics. 102. DOI: 10.1063/1.2811919  0.765
2007 Bason Y, Klein L, Wang HQ, Hoffman J, Hong X, Henrich VE, Ahn CH. Planar Hall effect in epitaxial thin films of magnetite Journal of Applied Physics. 101. DOI: 10.1063/1.2712053  0.74
2006 Hong X, Yau JB, Hoffman JD, Ahn CH, Bason Y, Klein L. Effect of electric field doping on the anisotropic magnetoresistance in doped manganites Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.174406  0.706
2006 Kaspar TC, Droubay T, Shutthanandan V, Heald SM, Wang CM, McCready DE, Thevuthasan S, Bryan JD, Gamelin DR, Kellock AJ, Toney MF, Hong X, Ahn CH, Chambers SA. Ferromagnetism and structure of epitaxial Cr-doped anatase TiO2 thin films Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.155327  0.635
2006 Bason Y, Klein L, Yau JB, Hong X, Hoffman J, Ahn CH. Planar Hall-effect magnetic random access memory Journal of Applied Physics. 99. DOI: 10.1063/1.2162824  0.728
2005 Hong X, Posadas A, Ahn CH. Examining the screening limit of field effect devices via the metal-insulator transition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897076  0.752
2004 Bason Y, Klein L, Yau JB, Hong X, Ahn CH. Giant planar Hall effect in colossal magnetoresistive La 0.84Sr 0.16MnO 3 thin films Applied Physics Letters. 84: 2593-2595. DOI: 10.1063/1.1695197  0.614
2004 Bason Y, Klein L, Yau JB, Hong X, Ahn CH. Characterization of the magnetic anisotropy in thin films of La 1-xSrxMnO3 using the planar Hall effect Physica Status Solidi C: Conferences. 1: 3336-3338. DOI: 10.1002/Pssc.200405450  0.627
2004 Hong X, Xiao F, Reiner JW, Posadas A, Ahn CH. Growth and characterization of La0.8Sr0.2MnO 3/Pb(Zr0.2Ti0.8)O3/La 0.8Sr0.2MnO3 heterostructures for three-dimensional circuit studies Annalen Der Physik (Leipzig). 13: 15-19. DOI: 10.1002/Andp.200310035  0.758
2003 Hong X, Posadas A, Lin A, Ahn CH. Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La 1 − x Sr x MnO 3 Physical Review B. 68: 134415. DOI: 10.1103/Physrevb.68.134415  0.733
2003 Hong X, Posadas A, Lin A, Ahn CH. Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La1-xSrxMnO3 Physical Review B - Condensed Matter and Materials Physics. 68: 1344151-1344155.  0.609
2001 Lin A, Hong X, Wood V, Verevkin AA, Ahn CH, McKee RA, Walker FJ, Specht ED. Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties Applied Physics Letters. 78: 2034-2036. DOI: 10.1063/1.1358848  0.58
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