| Year |
Citation |
Score |
| 2023 |
Wu Y, Zhou P, Xiao Y, Sun K, Wang D, Wang P, Mi Z. Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity. Proceedings of the National Academy of Sciences of the United States of America. 120: e2303473120. PMID 37874860 DOI: 10.1073/pnas.2303473120 |
0.309 |
|
| 2023 |
Pandey A, Min J, Reddeppa M, Malhotra Y, Xiao Y, Wu Y, Sun K, Mi Z. An Ultrahigh Efficiency Excitonic Micro-LED. Nano Letters. PMID 36728762 DOI: 10.1021/acs.nanolett.2c04220 |
0.325 |
|
| 2022 |
Wu Y, Xiao Y, Navid I, Sun K, Malhotra Y, Wang P, Wang D, Xu Y, Pandey A, Reddeppa M, Shin W, Liu J, Min J, Mi Z. InGaN micro-light-emitting diodes monolithically grown on Si: achieving ultra-stable operation through polarization and strain engineering. Light, Science & Applications. 11: 294. PMID 36216825 DOI: 10.1038/s41377-022-00985-4 |
0.365 |
|
| 2022 |
Rashid RT, Chen Y, Liu X, Chowdhury FA, Liu M, Song J, Mi Z, Zhou B. Tunable green syngas generation from CO and HO with sunlight as the only energy input. Proceedings of the National Academy of Sciences of the United States of America. 119: e2121174119. PMID 35727969 DOI: 10.1073/pnas.2121174119 |
0.604 |
|
| 2022 |
Xing Z, Akter A, Kum HS, Baek Y, Ra YH, Yoo G, Lee K, Mi Z, Heo J. Mid-infrared photon sensing using InGaN/GaN nanodisks via intersubband absorption. Scientific Reports. 12: 4301. PMID 35277566 DOI: 10.1038/s41598-022-08323-9 |
0.788 |
|
| 2021 |
Wang R, Cheng S, Vanka S, Botton GA, Mi Z. Selective area grown AlInGaN nanowire arrays with core-shell structures for photovoltaics on silicon. Nanoscale. PMID 33881116 DOI: 10.1039/d1nr00468a |
0.304 |
|
| 2020 |
Liu M, Tan L, Rashid RT, Cen Y, Cheng S, Botton G, Mi Z, Li CJ. GaN nanowires as a reusable photoredox catalyst for radical coupling of carbonyl under blacklight irradiation. Chemical Science. 11: 7864-7870. PMID 34123073 DOI: 10.1039/d0sc02718a |
0.661 |
|
| 2020 |
Doughty RM, Chowdhury FA, Mi Z, Osterloh FE. Surface photovoltage spectroscopy observes junctions and carrier separation in gallium nitride nanowire arrays for overall water-splitting. The Journal of Chemical Physics. 153: 144707. PMID 33086834 DOI: 10.1063/5.0021273 |
0.303 |
|
| 2020 |
Chu S, Ou P, Rashid RT, Ghamari P, Wang R, Tran HN, Zhao S, Zhang H, Song J, Mi Z. Decoupling Strategy for Enhanced Syngas Generation from Photoelectrochemical CO Reduction. Iscience. 23: 101390. PMID 32745990 DOI: 10.1016/J.Isci.2020.101390 |
0.384 |
|
| 2020 |
Ra YH, Rashid RT, Liu X, Sadaf SM, Mashooq K, Mi Z. An electrically pumped surface-emitting semiconductor green laser. Science Advances. 6: eaav7523. PMID 31921999 DOI: 10.1126/Sciadv.Aav7523 |
0.399 |
|
| 2020 |
Zhou B, Ou P, Pant N, Cheng S, Vanka S, Chu S, Rashid RT, Botton G, Song J, Mi Z. Highly efficient binary copper-iron catalyst for photoelectrochemical carbon dioxide reduction toward methane. Proceedings of the National Academy of Sciences of the United States of America. PMID 31900367 DOI: 10.1073/Pnas.1911159117 |
0.3 |
|
| 2020 |
Pandey A, Shin WJ, Gim J, Hovden R, Mi Z. High-efficiency AlGaN/GaN/AlGaN tunnel junction ultraviolet light-emitting diodes Photonics Research. 8: 331. DOI: 10.1364/Prj.383652 |
0.468 |
|
| 2020 |
Liu X, Wu Y, Malhotra Y, Sun Y, Mi Z. Micrometer scale InGaN green light emitting diodes with ultra-stable operation Applied Physics Letters. 117: 11104. DOI: 10.1063/5.0005436 |
0.473 |
|
| 2020 |
Wen Q, Wu Y, Wang P, Laleyan D, Bayerl D, Kioupakis E, Mi Z, Kira M. Hyperspectral absorption of semiconductor monolayer crystals Applied Physics Letters. 116: 181103. DOI: 10.1063/5.0004119 |
0.351 |
|
| 2020 |
Wang P, Laleyan DA, Pandey A, Sun Y, Mi Z. Molecular beam epitaxy and characterization of wurtzite ScxAl1−xN Applied Physics Letters. 116: 151903. DOI: 10.1063/5.0002445 |
0.363 |
|
| 2020 |
Wang P, Pandey A, Gim J, Shin WJ, Reid ET, Laleyan DA, Sun Y, Zhang D, Liu Z, Zhong Z, Hovden R, Mi Z. Graphene-assisted molecular beam epitaxy of AlN for AlGaN deep-ultraviolet light-emitting diodes Applied Physics Letters. 116: 171905. DOI: 10.1063/1.5144906 |
0.413 |
|
| 2020 |
Laleyan DA, Fernández-Delgado N, Reid ET, Wang P, Pandey A, Botton GA, Mi Z. Strain-free ultrathin AlN epilayers grown directly on sapphire by high-temperature molecular beam epitaxy Applied Physics Letters. 116: 152102. DOI: 10.1063/1.5144838 |
0.31 |
|
| 2020 |
Chung K, Pandey A, Sarwar T, Aiello A, Mi Z, Bhattacharya P, Ku P. Wavelength tuning in the purple wavelengths using strain-controlled AlxGa1–xN/GaN disk-in-wire structures Applied Physics Letters. 116: 041102. DOI: 10.1063/1.5140996 |
0.547 |
|
| 2020 |
Aiello A, Wu Y, Mi Z, Bhattacharya P. Deep ultraviolet monolayer GaN/AlN disk-in-nanowire array photodiode on silicon Applied Physics Letters. 116: 61104. DOI: 10.1063/1.5135570 |
0.467 |
|
| 2020 |
Wu Y, Liu X, Wang P, Laleyan DA, Sun K, Sun Y, Ahn C, Kira M, Kioupakis E, Mi Z. Monolayer GaN excitonic deep ultraviolet light emitting diodes Applied Physics Letters. 116: 013101. DOI: 10.1063/1.5124828 |
0.445 |
|
| 2020 |
Liu M, Tan L, Rashid RT, Cen Y, Cheng S, Botton G, Mi Z, Li C. GaN nanowires as a reusable photoredox catalyst for radical coupling of carbonyl under blacklight irradiation Chemical Science. 11: 7864-7870. DOI: 10.1039/D0Sc02718A |
0.512 |
|
| 2020 |
Liu M, Qiu Z, Tan L, Rashid RT, Chu S, Cen Y, Luo Z, Khaliullin RZ, Mi Z, Li C. Photocatalytic Methylation of Nonactivated sp3 and sp2 C–H Bonds Using Methanol on GaN Acs Catalysis. 10: 6248-6253. DOI: 10.1021/Acscatal.0C00881 |
0.43 |
|
| 2020 |
Fan R, Zhou J, Xun W, Cheng S, Vanka S, Cai T, Ju S, Mi Z, Shen M. Highly efficient and stable Si photocathode with hierarchical MoS2/Ni3S2 catalyst for solar hydrogen production in alkaline media Nano Energy. 71: 104631. DOI: 10.1016/J.Nanoen.2020.104631 |
0.377 |
|
| 2020 |
Wu Y, Laleyan DA, Deng Z, Ahn C, Aiello AF, Pandey A, Liu X, Wang P, Sun K, Ahmadi E, Sun Y, Kira M, Bhattacharya PK, Kioupakis E, Mi Z. Controlling Defect Formation of Nanoscale AlN: Toward Efficient Current Conduction of Ultrawide‐Bandgap Semiconductors Advanced Electronic Materials. 2000337. DOI: 10.1002/Aelm.202000337 |
0.514 |
|
| 2020 |
Cheng S, Wu Z, Langelier B, Kong X, Coenen T, Hari S, Ra Y, Rashid RT, Pofelski A, Yuan H, Li X, Mi Z, Guo H, Botton GA. Nanoscale Structural and Emission Properties within “Russian Doll”‐Type InGaN/AlGaN Quantum Wells Advanced Optical Materials. 8: 2000481. DOI: 10.1002/Adom.202000481 |
0.362 |
|
| 2019 |
Shin W, Pandey A, Liu X, Sun Y, Mi Z. Photonic crystal tunnel junction deep ultraviolet light emitting diodes with enhanced light extraction efficiency. Optics Express. 27: 38413-38420. PMID 31878609 DOI: 10.1364/Oe.380739 |
0.426 |
|
| 2019 |
Aiello A, Wu Y, Pandey A, Wang P, Lee W, Bayerl D, Sanders N, Deng Z, Gim J, Sun K, Hovden R, Kioupakis E, Mi Z, Bhattacharya P. Deep Ultraviolet Luminescence Due to Extreme Confinement in Monolayer GaN/Al(Ga)N Nanowire and Planar Heterostructures. Nano Letters. PMID 31573819 DOI: 10.1021/Acs.Nanolett.9B02847 |
0.58 |
|
| 2019 |
Liu M, Wang Y, Kong X, Tan L, Li L, Cheng S, Botton G, Guo H, Mi Z, Li CJ. Efficient Nitrogen Fixation Catalyzed by Gallium Nitride Nanowire Using Nitrogen and Water. Iscience. 17: 208-216. PMID 31288155 DOI: 10.1016/J.Isci.2019.06.032 |
0.697 |
|
| 2019 |
Pandey A, Shin WJ, Liu X, Mi Z. Effect of electron blocking layer on the efficiency of AlGaN mid-ultraviolet light emitting diodes. Optics Express. 27: A738-A745. PMID 31252850 DOI: 10.1364/Oe.27.00A738 |
0.372 |
|
| 2019 |
Chu S, Rashid RT, Liu X, Mi Z. Photodeposition of a conformal metal oxide nanocoating. Chemical Communications (Cambridge, England). PMID 31089594 DOI: 10.1039/C9Cc02753J |
0.355 |
|
| 2019 |
Cheng S, Langelier B, Ra YH, Rashid RT, Mi Z, Botton GA. Structural origin of the high-performance light-emitting InGaN/AlGaN quantum disks. Nanoscale. PMID 31017168 DOI: 10.1039/C9Nr01262A |
0.424 |
|
| 2019 |
Hajibabaei H, Little DJ, Pandey A, Wang D, Mi Z, Hamann TW. Direct Deposition of Crystalline Ta3N5 Thin-Films on FTO for PEC Water Splitting. Acs Applied Materials & Interfaces. PMID 30964262 DOI: 10.1021/Acsami.8B21194 |
0.333 |
|
| 2019 |
Le BH, Liu X, Tran NH, Zhao S, Mi Z. An electrically injected AlGaN nanowire defect-free photonic crystal ultraviolet laser. Optics Express. 27: 5843-5850. PMID 30876179 DOI: 10.1364/Oe.27.005843 |
0.379 |
|
| 2019 |
Fan R, Mi Z, Shen M. Silicon based photoelectrodes for photoelectrochemical water splitting. Optics Express. 27: A51-A80. PMID 30876004 DOI: 10.1364/Oe.27.000A51 |
0.355 |
|
| 2019 |
Schwartz J, Jiang Y, Wang Y, Aiello A, Bhattacharya P, Yuan H, Mi Z, Bassim N, Hovden R. Removing Stripes, Scratches, and Curtaining with Nonrecoverable Compressed Sensing. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 1-6. PMID 30867078 DOI: 10.1017/S1431927619000254 |
0.445 |
|
| 2019 |
Sadaf SM, Ra YH, Zhao S, Szkopek T, Mi Z. Structural and electrical characterization of monolithic core-double shell n-GaN/Al/p-AlGaN nanowire heterostructures grown by molecular beam epitaxy. Nanoscale. PMID 30758042 DOI: 10.1039/C9Nr00081J |
0.334 |
|
| 2019 |
Liu X, Mashooq K, Laleyan DA, Reid ET, Mi Z. AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics Photonics Research. 7: B12. DOI: 10.1364/Prj.7.000B12 |
0.422 |
|
| 2019 |
Nguyen HP, Zhang S, Cui K, Han X, Mi Z. Molecular Beam Epitaxial Growth, Fabrication, and Characterization of High Efficiency InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes on Si(111) Ecs Transactions. 35: 41-46. DOI: 10.1149/1.3570844 |
0.314 |
|
| 2019 |
Mi Z, Chang Y, Li F, Wang J. (Invited) High Performance Quantum Dot Microtube Lasers and Nanowire LEDs on Si Ecs Transactions. 28: 285-295. DOI: 10.1149/1.3367235 |
0.309 |
|
| 2019 |
Zhao S, Wang R, Chu S, Mi Z. Molecular Beam Epitaxy of III-Nitride Nanowires: Emerging Applications From Deep-Ultraviolet Light Emitters and Micro-LEDs to Artificial Photosynthesis Ieee Nanotechnology Magazine. 13: 6-16. DOI: 10.1109/Mnano.2019.2891370 |
0.38 |
|
| 2019 |
Chowdhury FA, Mi Z. Probing the large bandgap-bowing and signature of antimony (Sb) in dilute-antimonide III-nitride using micro-Raman scattering Journal of Applied Physics. 126: 085704. DOI: 10.1063/1.5109735 |
0.386 |
|
| 2019 |
Hai X, Rashid RT, Sadaf SM, Mi Z, Zhao S. Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes Applied Physics Letters. 114: 101104. DOI: 10.1063/1.5091517 |
0.441 |
|
| 2019 |
Wang Y, Wu Y, Sun K, Mi Z. A quadruple-band metal–nitride nanowire artificial photosynthesis system for high efficiency photocatalytic overall solar water splitting Materials Horizons. 6: 1454-1462. DOI: 10.1039/C9Mh00257J |
0.346 |
|
| 2019 |
Zhou B, Kong X, Vanka S, Cheng S, Pant N, Chu S, Ghamari P, Wang Y, Botton G, Cuo H, Mi Z. A GaN:Sn nanoarchitecture integrated on a silicon platform for converting CO2 to HCOOH by photoelectrocatalysis Energy & Environmental Science. 12: 2842-2848. DOI: 10.1039/C9Ee01339C |
0.328 |
|
| 2019 |
Fan R, Cheng S, Huang G, Wang Y, Zhang Y, Vanka S, Botton GA, Mi Z, Shen M. Unassisted solar water splitting with 9.8% efficiency and over 100 h stability based on Si solar cells and photoelectrodes catalyzed by bifunctional Ni–Mo/Ni Journal of Materials Chemistry A. 7: 2200-2209. DOI: 10.1039/C8Ta10165E |
0.333 |
|
| 2019 |
Shan B, Vanka S, Li T, Troian-Gautier L, Brennaman MK, Mi Z, Meyer TJ. Binary molecular-semiconductor p–n junctions for photoelectrocatalytic CO2 reduction Nature Energy. 4: 290-299. DOI: 10.1038/S41560-019-0345-Y |
0.404 |
|
| 2019 |
Wang Y, Schwartz J, Gim J, Hovden R, Mi Z. Stable Unassisted Solar Water Splitting on Semiconductor Photocathodes Protected by Multifunctional GaN Nanostructures Acs Energy Letters. 4: 1541-1548. DOI: 10.1021/Acsenergylett.9B00549 |
0.391 |
|
| 2019 |
Wang Y, Vanka S, Gim J, Wu Y, Fan R, Zhang Y, Shi J, Shen M, Hovden R, Mi Z. An In0.42Ga0.58N tunnel junction nanowire photocathode monolithically integrated on a nonplanar Si wafer Nano Energy. 57: 405-413. DOI: 10.1016/J.Nanoen.2018.12.067 |
0.46 |
|
| 2019 |
Wang Y, Wu Y, Schwartz J, Sung SH, Hovden R, Mi Z. A Single-Junction Cathodic Approach for Stable Unassisted Solar Water Splitting Joule. 3: 2444-2456. DOI: 10.1016/J.Joule.2019.07.022 |
0.406 |
|
| 2019 |
Aiello A, Pandey A, Bhattacharya A, Gim J, Liu X, Laleyan DA, Hovden R, Mi Z, Bhattacharya P. Optical and interface characteristics of Al0.56Ga0.44N/Al0.62Ga0.38N multiquantum wells with ∼280 nm emission grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 508: 66-71. DOI: 10.1016/J.Jcrysgro.2018.12.025 |
0.578 |
|
| 2019 |
Laleyan DA, Liu X, Pandey A, Shin WJ, Reid ET, Mashooq K, Soltani M, Mi Z. Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers Journal of Crystal Growth. 507: 87-92. DOI: 10.1016/J.Jcrysgro.2018.10.048 |
0.356 |
|
| 2019 |
Wu Y, Wang Y, Sun K, Mi Z. Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (0 0 1) substrate Journal of Crystal Growth. 507: 65-69. DOI: 10.1016/J.Jcrysgro.2018.10.028 |
0.415 |
|
| 2019 |
Liu M, Wang Y, Kong X, Rashid RT, Chu S, Li C, Hearne Z, Guo H, Mi Z, Li C. Direct Catalytic Methanol-to-Ethanol Photo-conversion via Methyl Carbene Chem. 5: 858-867. DOI: 10.1016/J.Chempr.2019.01.005 |
0.658 |
|
| 2019 |
He Y, Vanka S, Gao T, He D, Espano J, Zhao Y, Dong Q, Lang C, Wang Y, Hamann TW, Mi Z, Wang D. Dependence of interface energetics and kinetics on catalyst loading in a photoelectrochemical system Nano Research. 12: 2378-2384. DOI: 10.1007/S12274-019-2346-3 |
0.339 |
|
| 2018 |
Meuret S, Solà Garcia M, Coenen T, Kieft E, Zeijlemaker H, Lätzel M, Christiansen S, Woo SY, Ra YH, Mi Z, Polman A. Complementary cathodoluminescence lifetime imaging configurations in a scanning electron microscope. Ultramicroscopy. 197: 28-38. PMID 30476703 DOI: 10.1016/J.Ultramic.2018.11.006 |
0.304 |
|
| 2018 |
Zhou B, Kong X, Vanka S, Chu S, Ghamari P, Wang Y, Pant N, Shih I, Guo H, Mi Z. Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting. Nature Communications. 9: 3856. PMID 30242212 DOI: 10.1038/S41467-018-06140-1 |
0.399 |
|
| 2018 |
Vanka S, Arca E, Cheng S, Sun K, Botton GA, Teeter G, Mi Z. A High Efficiency Si Photocathode Protected by Multi-Functional GaN Nanostructures. Nano Letters. PMID 30216079 DOI: 10.1021/Acs.Nanolett.8B03087 |
0.428 |
|
| 2018 |
Laleyan DA, Mengle K, Zhao S, Wang Y, Kioupakis E, Mi Z. Effect of growth temperature on the structural and optical properties of few-layer hexagonal boron nitride by molecular beam epitaxy. Optics Express. 26: 23031-23039. PMID 30184959 DOI: 10.1364/Oe.26.023031 |
0.383 |
|
| 2018 |
Song P, Chen C, Qu J, Ou P, Dastjerdi HT, Mi Z, Song J, Liu X. Rolled-up SiOx/SiNx Microtubes with Enhanced Quality Factors for Sensitive Solvent Sensing. Nanotechnology. PMID 29968573 DOI: 10.1088/1361-6528/Aad0B1 |
0.325 |
|
| 2018 |
Chu S, Ou P, Ghamari P, Vanka S, Zhou B, Shih I, Song J, Mi Z. Photoelectrochemical CO Reduction into Syngas with the Metal/Oxide Interface. Journal of the American Chemical Society. PMID 29905471 DOI: 10.1021/Jacs.8B03067 |
0.316 |
|
| 2018 |
Chowdhury FA, Trudeau ML, Guo H, Mi Z. A photochemical diode artificial photosynthesis system for unassisted high efficiency overall pure water splitting. Nature Communications. 9: 1707. PMID 29703937 DOI: 10.1038/S41467-018-04067-1 |
0.415 |
|
| 2018 |
Meuret S, Coenen T, Woo S, Ra YH, Mi Z, Polman A. Nanoscale relative emission efficiency mapping using cathodoluminescence gimaging. Nano Letters. PMID 29546762 DOI: 10.1021/Acs.Nanolett.7B04891 |
0.323 |
|
| 2018 |
Zhao S, Mi Z. AlGaN Nanowires: Path to Electrically Injected Semiconductor Deep Ultraviolet Lasers Ieee Journal of Quantum Electronics. 54: 1-9. DOI: 10.1109/Jqe.2018.2870439 |
0.361 |
|
| 2018 |
Liu X, Mashooq K, Szkopek T, Mi Z. Improving the Efficiency of Transverse Magnetic Polarized Emission from AlGaN Based LEDs by Using Nanowire Photonic Crystal Ieee Photonics Journal. 10: 1-11. DOI: 10.1109/Jphot.2018.2842110 |
0.433 |
|
| 2018 |
Liu X, Pandey A, Laleyan DA, Mashooq K, Reid ET, Shin WJ, Mi Z. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy Semiconductor Science and Technology. 33: 085005. DOI: 10.1088/1361-6641/Aace97 |
0.306 |
|
| 2018 |
Pandey A, Bhattacharya A, Cheng S, Botton GA, Mi Z, Bhattacharya P. A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN Journal of Physics D: Applied Physics. 51: 14LT01. DOI: 10.1088/1361-6463/Aab1E4 |
0.393 |
|
| 2018 |
Qu J, Wang R, Sun Y, Shih I, Mi Z, Liu X. Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires Applied Physics Letters. 113: 193103. DOI: 10.1063/1.5050511 |
0.357 |
|
| 2018 |
Zhou X, Zhou J, Huang G, Fan R, Ju S, Mi Z, Shen M. A bifunctional and stable Ni–Co–S/Ni–Co–P bistratal electrocatalyst for 10.8%-efficient overall solar water splitting Journal of Materials Chemistry A. 6: 20297-20303. DOI: 10.1039/C8Ta07197G |
0.318 |
|
| 2018 |
Guan X, Chowdhury FA, Wang Y, Pant N, Vanka S, Trudeau ML, Guo L, Vayssieres L, Mi Z. Making of an Industry-Friendly Artificial Photosynthesis Device Acs Energy Letters. 3: 2230-2231. DOI: 10.1021/Acsenergylett.8B01377 |
0.332 |
|
| 2018 |
Chu S, Vanka S, Wang Y, Gim J, Wang Y, Ra Y, Hovden R, Guo H, Shih I, Mi Z. Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV Acs Energy Letters. 3: 307-314. DOI: 10.1021/Acsenergylett.7B01138 |
0.39 |
|
| 2018 |
Guan X, Chowdhury FA, Pant N, Guo L, Vayssieres L, Mi Z. Efficient Unassisted Overall Photocatalytic Seawater Splitting on GaN-Based Nanowire Arrays The Journal of Physical Chemistry C. 122: 13797-13802. DOI: 10.1021/Acs.Jpcc.8B00875 |
0.373 |
|
| 2018 |
Park Y, Gim J, Yalisove R, Hovden R, Mi Z. Heteroepitaxy of Fin-Shaped InGaN Nanoridge Using Molecular Beam Epitaxy Crystal Growth & Design. 18: 5750-5756. DOI: 10.1021/Acs.Cgd.8B01211 |
0.372 |
|
| 2018 |
Gim J, Yalisove R, Chu S, Park Y, Vanka S, Wang Y, Wang Y, Ra Y, Guo H, Shih I, Mi Z, Hovden R. Hierarchical InGaN Nanowires for High-Efficiency Solar Water Splitting Microscopy and Microanalysis. 24: 1670-1671. DOI: 10.1017/S1431927618008838 |
0.347 |
|
| 2018 |
Wang Y, Zhao S, Wang Y, Laleyan DA, Wu Y, Ouyang B, Ou P, Song J, Mi Z. Wafer-scale synthesis of monolayer WSe2: A multi-functional photocatalyst for efficient overall pure water splitting Nano Energy. 51: 54-60. DOI: 10.1016/J.Nanoen.2018.06.047 |
0.373 |
|
| 2018 |
Wu Y, Wang Y, Sun K, Aiello A, Bhattacharya P, Mi Z. Molecular beam epitaxy and characterization of Mg-doped GaN epilayers grown on Si (0 0 1) substrate through controlled nanowire coalescence Journal of Crystal Growth. 498: 109-114. DOI: 10.1016/J.Jcrysgro.2018.06.008 |
0.588 |
|
| 2018 |
Fan R, Huang G, Wang Y, Mi Z, Shen M. Efficient n+p-Si photocathodes for solar H2 production catalyzed by Co-W-S and stabilized by Ti buffer layer Applied Catalysis B: Environmental. 237: 158-165. DOI: 10.1016/J.Apcatb.2018.05.083 |
0.386 |
|
| 2018 |
Xu Z, Kibria MG, AlOtaibi B, Duchesne PN, Besteiro LV, Gao Y, Zhang Q, Mi Z, Zhang P, Govorov AO, Mai L, Chaker M, Ma D. Towards enhancing photocatalytic hydrogen generation: Which is more important, alloy synergistic effect or plasmonic effect? Applied Catalysis B: Environmental. 221: 77-85. DOI: 10.1016/J.Apcatb.2017.08.085 |
0.689 |
|
| 2017 |
Liu X, Le BH, Woo SY, Zhao S, Pofelski A, Botton GA, Mi Z. Selective area epitaxy of AlGaN nanowire arrays across nearly the entire compositional range for deep ultraviolet photonics. Optics Express. 25: 30494-30502. PMID 29221077 DOI: 10.1364/Oe.25.030494 |
0.467 |
|
| 2017 |
Li L, Wang Y, Vanka S, Mu X, Mi Z, Li CJ. Nitrogen Photofixation over III-Nitride Nanowires Assisted by Ruthenium Clusters of Low Atomicity. Angewandte Chemie (International Ed. in English). PMID 28598586 DOI: 10.1002/Anie.201703301 |
0.529 |
|
| 2017 |
Laleyan DA, Zhao S, Woo SY, Tran HN, Le HB, Szkopek T, Guo H, Botton GA, Mi Z. AlN/h-BN Heterostructures for Mg Dopant-Free Deep Ultraviolet Photonics. Nano Letters. 17: 3738-3743. PMID 28471682 DOI: 10.1021/Acs.Nanolett.7B01068 |
0.427 |
|
| 2017 |
Cheng Q, Fan W, He Y, Ma P, Vanka S, Fan S, Mi Z, Wang D. Photorechargeable High Voltage Redox Battery Enabled by Ta3 N5 and GaN/Si Dual-Photoelectrode. Advanced Materials (Deerfield Beach, Fla.). PMID 28464392 DOI: 10.1002/Adma.201700312 |
0.36 |
|
| 2017 |
Sadaf SM, Zhao S, Wu Y, Ra YH, Liu X, Vanka S, Mi Z. An AlGaN Core-Shell Tunnel Junction Nanowire Light Emitting Diode Operating in the Ultraviolet-C Band. Nano Letters. PMID 28081598 DOI: 10.1021/Acs.Nanolett.6B05002 |
0.477 |
|
| 2017 |
Asad M, Wang R, Ra Y, Wong WS, Mi Z. Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation) Proceedings of Spie. 10104. DOI: 10.1117/12.2254543 |
0.451 |
|
| 2017 |
Alagha S, Zhao S, Mi Z, Watkins SP, Kavanagh KL. Electrical characterization of Si/InN nanowire heterojunctions Semiconductor Science and Technology. 33: 015008. DOI: 10.1088/1361-6641/Aa9B57 |
0.38 |
|
| 2017 |
Chowdhury FA, Sadaf SM, Shi Q, Chen Y, Guo H, Mi Z. Optically active dilute-antimonide III-nitride nanostructures for optoelectronic devices Applied Physics Letters. 111: 061101. DOI: 10.1063/1.4997450 |
0.446 |
|
| 2017 |
Liu X, Zhao S, Le BH, Mi Z. Molecular beam epitaxial growth and characterization of AlN nanowall deep UV light emitting diodes Applied Physics Letters. 111: 101103. DOI: 10.1063/1.4989551 |
0.438 |
|
| 2017 |
Tran NH, Le BH, Zhao S, Mi Z. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures Applied Physics Letters. 110: 032102. DOI: 10.1063/1.4973999 |
0.352 |
|
| 2017 |
Chu S, Kong X, Vanka S, Guo H, Mi Z. Artificial Photosynthesis on III-Nitride Nanowire Arrays Semiconductors and Semimetals. 97: 223-255. DOI: 10.1016/Bs.Semsem.2017.02.004 |
0.327 |
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| 2017 |
Zhao S, Mi Z. InN Nanowires: Epitaxial Growth, Characterization, and Device Applications Semiconductors and Semimetals. 96: 267-304. DOI: 10.1016/Bs.Semsem.2016.08.001 |
0.354 |
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| 2017 |
Ra Y, Rashid RT, Liu X, Lee J, Mi Z. Scalable Nanowire Photonic Crystals: Molding the Light Emission of InGaN Advanced Functional Materials. 27: 1702364. DOI: 10.1002/Adfm.201702364 |
0.404 |
|
| 2016 |
Zhao H, Jin L, Zhou Y, Bandar A, Fan Z, Govorov AO, Mi Z, Sun S, Rosei F, Vomiero A. Green synthesis of near infrared core/shell quantum dots for photocatalytic hydrogen production. Nanotechnology. 27: 495405. PMID 27834311 DOI: 10.1088/0957-4484/27/49/495405 |
0.423 |
|
| 2016 |
Jin L, AlOtaibi B, Benetti D, Li S, Zhao H, Mi Z, Vomiero A, Rosei F. Near-Infrared Colloidal Quantum Dots for Efficient and Durable Photoelectrochemical Solar-Driven Hydrogen Production. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 3: 1500345. PMID 27668151 DOI: 10.1002/Advs.201500345 |
0.74 |
|
| 2016 |
Li L, Liu W, Mu X, Mi Z, Li CJ. Photo-induced iodination of aryl halides under very mild conditions. Nature Protocols. 11: 1948-1954. PMID 27658011 DOI: 10.1038/Nprot.2016.125 |
0.477 |
|
| 2016 |
Le BH, Zhao S, Liu X, Woo SY, Botton GA, Mi Z. Controlled Coalescence of AlGaN Nanowire Arrays: An Architecture for Nearly Dislocation-Free Planar Ultraviolet Photonic Device Applications. Advanced Materials (Deerfield Beach, Fla.). 28: 8446-8454. PMID 27489074 DOI: 10.1002/Adma.201602645 |
0.419 |
|
| 2016 |
Kibria MG, Qiao R, Yang W, Boukahil I, Kong X, Chowdhury FA, Trudeau ML, Ji W, Guo H, Himpsel FJ, Vayssieres L, Mi Z. Atomic-Scale Origin of Long-Term Stability and High Performance of p-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting. Advanced Materials (Deerfield Beach, Fla.). 28: 8388-8397. PMID 27456856 DOI: 10.1002/Adma.201602274 |
0.317 |
|
| 2016 |
Ra YH, Wang R, Woo SY, Djavid M, Sadaf SM, Lee J, Botton GA, Mi Z. Full-Color Single Nanowire Pixels for Projection Displays. Nano Letters. 16: 4608-15. PMID 27332859 DOI: 10.1021/Acs.Nanolett.6B01929 |
0.462 |
|
| 2016 |
Li L, Mu X, Liu W, Wang Y, Mi Z, Li CJ. Simple and Clean Photoinduced Aromatic Trifluoromethylation Reaction. Journal of the American Chemical Society. PMID 27137478 DOI: 10.1021/Jacs.6B02782 |
0.471 |
|
| 2016 |
Wang Y, Fan S, Al Otaibi B, Wang Y, Li L, Mi Z. A Monolithically Integrated Nanowire/Si Solar Cell Photocathode for Selective Carbon Dioxide Reduction to Methane. Chemistry (Weinheim An Der Bergstrasse, Germany). PMID 27128407 DOI: 10.1002/Chem.201601642 |
0.369 |
|
| 2016 |
Sadaf SM, Ra YH, Szkopek T, Mi Z. Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light Emitting Diodes. Nano Letters. PMID 26812264 DOI: 10.1021/Acs.Nanolett.5B04215 |
0.432 |
|
| 2016 |
Wang R, Ra YH, Wu Y, Zhao S, Nguyen HPT, Shih I, Mi Z. Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire Proceedings of Spie - the International Society For Optical Engineering. 9748. DOI: 10.1117/12.2213741 |
0.412 |
|
| 2016 |
Mi Z, Zhao S, Woo SY, Bugnet M, Djavid M, Liu X, Kang J, Kong X, Ji W, Guo H, Liu Z, Botton GA. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/36/364006 |
0.427 |
|
| 2016 |
Zhao S, Sadaf SM, Vanka S, Wang Y, Rashid R, Mi Z. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm Applied Physics Letters. 109: 201106. DOI: 10.1063/1.4967837 |
0.462 |
|
| 2016 |
Zhao S, Liu X, Wu Y, Mi Z. An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature Applied Physics Letters. 109: 191106. DOI: 10.1063/1.4967180 |
0.423 |
|
| 2016 |
Zhao S, Woo SY, Sadaf SM, Wu Y, Pofelski A, Laleyan DA, Rashid RT, Wang Y, Botton GA, Mi Z. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics Apl Materials. 4: 086115. DOI: 10.1063/1.4961680 |
0.381 |
|
| 2016 |
Fan S, Woo SY, Vanka S, Botton GA, Mi Z. An In0.5Ga0.5N nanowire photoanode for harvesting deep visible light photons Apl Materials. 4. DOI: 10.1063/1.4958964 |
0.421 |
|
| 2016 |
Djavid M, Mi Z. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures Applied Physics Letters. 108. DOI: 10.1063/1.4941239 |
0.371 |
|
| 2016 |
Kibria MG, Mi Z. Artificial photosynthesis using metal/nonmetal-nitride semiconductors: Current status, prospects, and challenges Journal of Materials Chemistry A. 4: 2801-2820. DOI: 10.1039/C5Ta07364B |
0.319 |
|
| 2016 |
AlOtaibi B, Kong X, Vanka S, Woo SY, Pofelski A, Oudjedi F, Fan S, Kibria MG, Botton GA, Ji W, Guo H, Mi Z. Photochemical Carbon Dioxide Reduction on Mg-Doped Ga(In)N Nanowire Arrays under Visible Light Irradiation Acs Energy Letters. 1: 246-252. DOI: 10.1021/Acsenergylett.6B00119 |
0.709 |
|
| 2016 |
Adhikari R, Jin L, Navarro-Pardo F, Benetti D, AlOtaibi B, Vanka S, Zhao H, Mi Z, Vomiero A, Rosei F. High efficiency, Pt-free photoelectrochemical cells for solar hydrogen generation based on “giant” quantum dots Nano Energy. 27: 265-274. DOI: 10.1016/J.Nanoen.2016.07.010 |
0.73 |
|
| 2016 |
Fan S, Shih I, Mi Z. A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV Advanced Energy Materials. DOI: 10.1002/Aenm.201600952 |
0.321 |
|
| 2016 |
Jin L, AlOtaibi B, Benetti D, Li S, Zhao H, Mi Z, Vomiero A, Rosei F. Quantum Dots: Near-Infrared Colloidal Quantum Dots for Efficient and Durable Photoelectrochemical Solar-Driven Hydrogen Production (Adv. Sci. 3/2016) Advanced Science. 3. DOI: 10.1002/Advs.201670016 |
0.726 |
|
| 2015 |
Liu G, Zhao S, Henderson RD, Leonenko Z, Abdel-Rahman E, Mi Z, Ban D. Nanogenerators based on vertically aligned InN nanowires. Nanoscale. PMID 26700694 DOI: 10.1039/C5Nr06841J |
0.348 |
|
| 2015 |
Zhao S, Woo SY, Bugnet M, Liu X, Kang J, Botton GA, Mi Z. Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers. Nano Letters. PMID 26539880 DOI: 10.1021/Acs.Nanolett.5B02133 |
0.473 |
|
| 2015 |
Sadaf SM, Ra YH, Nguyen HP, Djavid M, Mi Z. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes. Nano Letters. PMID 26384135 DOI: 10.1021/Acs.Nanolett.5B02515 |
0.418 |
|
| 2015 |
Zhao S, Djavid M, Mi Z. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon. Nano Letters. PMID 26375576 DOI: 10.1021/Acs.Nanolett.5B03040 |
0.431 |
|
| 2015 |
AlOtaibi B, Fan S, Vanka S, Kibria MG, Mi Z. A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination. Nano Letters. 15: 6821-8. PMID 26360182 DOI: 10.1021/Acs.Nanolett.5B02671 |
0.741 |
|
| 2015 |
Pu YC, Kibria MG, Mi Z, Zhang JZ. Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires. The Journal of Physical Chemistry Letters. 6: 2649-56. PMID 26266748 DOI: 10.1021/Acs.Jpclett.5B00909 |
0.359 |
|
| 2015 |
Woo SY, Gauquelin N, Nguyen HP, Mi Z, Botton GA. Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy. Nanotechnology. 26: 344002. PMID 26234582 DOI: 10.1088/0957-4484/26/34/344002 |
0.363 |
|
| 2015 |
Salehzadeh O, Djavid M, Tran NH, Shih I, Mi Z. Optically Pumped Two-Dimensional MoS2 Lasers Operating at Room-Temperature. Nano Letters. 15: 5302-6. PMID 26214363 DOI: 10.1021/Acs.Nanolett.5B01665 |
0.34 |
|
| 2015 |
Hazari A, Bhattacharya A, Frost T, Zhao S, Baten MZ, Mi Z, Bhattacharya P. Optical constants of In(x)Ga(1-x)N (0 ≤ x ≤ 0.73) in the visible and near-infrared wavelength regimes. Optics Letters. 40: 3304-7. PMID 26176455 DOI: 10.1364/Ol.40.003304 |
0.758 |
|
| 2015 |
Kibria MG, Chowdhury FA, Trudeau ML, Guo H, Mi Z. Dye-sensitized InGaN nanowire arrays for efficient hydrogen production under visible light irradiation. Nanotechnology. 26: 285401. PMID 26120103 DOI: 10.1088/0957-4484/26/28/285401 |
0.442 |
|
| 2015 |
Li L, Liu W, Zeng H, Mu X, Cosa G, Mi Z, Li CJ. Photo-induced Metal-Catalyst-Free Aromatic Finkelstein Reaction. Journal of the American Chemical Society. PMID 26086314 DOI: 10.1021/Jacs.5B03220 |
0.471 |
|
| 2015 |
Li L, Mu X, Liu W, Mi Z, Li CJ. Simple and Efficient System for Combined Solar Energy Harvesting and Reversible Hydrogen Storage. Journal of the American Chemical Society. 137: 7576-9. PMID 26059734 DOI: 10.1021/Jacs.5B03505 |
0.538 |
|
| 2015 |
Li S, AlOtaibi B, Huang W, Mi Z, Serpone N, Nechache R, Rosei F. Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material. Small (Weinheim An Der Bergstrasse, Germany). 11: 4018-26. PMID 25988512 DOI: 10.1002/Smll.201403206 |
0.709 |
|
| 2015 |
Kibria MG, Chowdhury FA, Zhao S, AlOtaibi B, Trudeau ML, Guo H, Mi Z. Visible light-driven efficient overall water splitting using p-type metal-nitride nanowire arrays. Nature Communications. 6: 6797. PMID 25854846 DOI: 10.1038/Ncomms7797 |
0.745 |
|
| 2015 |
Fan S, AlOtaibi B, Woo SY, Wang Y, Botton GA, Mi Z. High efficiency solar-to-hydrogen conversion on a monolithically integrated InGaN/GaN/Si adaptive tunnel junction photocathode. Nano Letters. 15: 2721-6. PMID 25811636 DOI: 10.1021/Acs.Nanolett.5B00535 |
0.745 |
|
| 2015 |
Zhao S, Connie AT, Dastjerdi MH, Kong XH, Wang Q, Djavid M, Sadaf S, Liu XD, Shih I, Guo H, Mi Z. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Scientific Reports. 5: 8332. PMID 25684335 DOI: 10.1038/Srep08332 |
0.452 |
|
| 2015 |
Deshpande S, Frost T, Yan L, Jahangir S, Hazari A, Liu X, Mirecki-Millunchick J, Mi Z, Bhattacharya P. Formation and nature of InGaN quantum dots in GaN nanowires. Nano Letters. 15: 1647-53. PMID 25654749 DOI: 10.1021/Nl5041989 |
0.613 |
|
| 2015 |
Li KH, Liu X, Wang Q, Zhao S, Mi Z. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. Nature Nanotechnology. 10: 140-4. PMID 25599190 DOI: 10.1038/Nnano.2014.308 |
0.404 |
|
| 2015 |
Nguyen HP, Djavid M, Woo SY, Liu X, Connie AT, Sadaf S, Wang Q, Botton GA, Shih I, Mi Z. Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers. Scientific Reports. 5: 7744. PMID 25592057 DOI: 10.1038/Srep07744 |
0.45 |
|
| 2015 |
Le BH, Zhao S, Tran NH, Szkopek T, Mi Z. On the Fermi-level pinning of InN grown surfaces Applied Physics Express. 8. DOI: 10.7567/Apex.8.061001 |
0.334 |
|
| 2015 |
Kibria G, Chowdhury FA, Mi Z. Achieving artificial photosynthesis with nanowires Spie Newsroom. DOI: 10.1117/2.1201501.005751 |
0.336 |
|
| 2015 |
Mi Z, Zhao S, Connie A, Tavakoli Dastjerdi MH. High efficiency AlGaN deep ultraviolet light emitting diodes on silicon Proceedings of Spie - the International Society For Optical Engineering. 9373. DOI: 10.1117/12.2087050 |
0.461 |
|
| 2015 |
Nguyen HPT, Djavid M, Woo SY, Liu X, Wang Q, Botton GA, Mi Z. High-power phosphor-free InGaN/AlGaN dot-in-A-wire core-shell white light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 9383. DOI: 10.1117/12.2084777 |
0.438 |
|
| 2015 |
Li KH, Liu X, Zhao S, Wang Q, Mi Z. Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2080116 |
0.45 |
|
| 2015 |
Wang Y, AlOtaibi B, Chowdhury FA, Fan S, Kibria MG, Li L, Li C, Mi Z. Photoelectrochemical reduction of carbon dioxide using Ge doped GaN nanowire photoanodes Apl Materials. 3: 116106. DOI: 10.1063/1.4935307 |
0.741 |
|
| 2015 |
Zhao S, Liu X, Woo SY, Kang J, Botton GA, Mi Z. An electrically injected AlGaN nanowire laser operating in the ultraviolet-C band Applied Physics Letters. 107. DOI: 10.1063/1.4927602 |
0.448 |
|
| 2015 |
Chowdhury FA, Mi Z, Kibria MG, Trudeau ML. Group III-nitride nanowire structures for photocatalytic hydrogen evolution under visible light irradiation Apl Materials. 3. DOI: 10.1063/1.4923258 |
0.417 |
|
| 2015 |
Wang R, Liu X, Shih I, Mi Z. High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si Applied Physics Letters. 106. DOI: 10.1063/1.4923246 |
0.427 |
|
| 2015 |
Connie AT, Zhao S, Sadaf SM, Shih I, Mi Z, Du X, Lin J, Jiang H. Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4921626 |
0.331 |
|
| 2015 |
Kibria MG, Chowdhury FA, Zhao S, Trudeau ML, Guo H, Mi Z. Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light Applied Physics Letters. 106. DOI: 10.1063/1.4915609 |
0.42 |
|
| 2015 |
Dastjerdi MHT, Djavid M, Mi Z. An electrically injected rolled-up semiconductor tube laser Applied Physics Letters. 106. DOI: 10.1063/1.4906238 |
0.415 |
|
| 2015 |
Zhang S, Laleyan DA, Wang Q, Mi Z. Impact of nanowire geometry on the carrier transport in GaN/InGaN axial nanowire light-emitting diodes The Journal of Engineering. 2015: 299-301. DOI: 10.1049/Joe.2014.0349 |
0.382 |
|
| 2015 |
Alotaibi B, Fan S, Wang D, Ye J, Mi Z. Wafer-Level Artificial Photosynthesis for CO2 Reduction into CH4 and CO Using GaN Nanowires Acs Catalysis. 5: 5342-5348. DOI: 10.1021/Acscatal.5B00776 |
0.702 |
|
| 2015 |
AlOtaibi B, Fan S, Vanka S, Kibria MG, Mi Z. A Metal-Nitride Nanowire Dual-Photoelectrode Device for Unassisted Solar-to-Hydrogen Conversion under Parallel Illumination Nano Letters. 15: 6821-6828. DOI: 10.1021/acs.nanolett.5b02671 |
0.689 |
|
| 2015 |
Zhao S, Nguyen HPT, Kibria MG, Mi Z. III-Nitride nanowire optoelectronics Progress in Quantum Electronics. 44: 14-68. DOI: 10.1016/J.Pquantelec.2015.11.001 |
0.405 |
|
| 2015 |
Li KH, Wang Q, Nguyen HPT, Zhao S, Mi Z. Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy Physica Status Solidi (a) Applications and Materials Science. 212: 941-946. DOI: 10.1002/Pssa.201431726 |
0.37 |
|
| 2015 |
Sun G, Chen R, Ding YJ, Nguyen HPT, Mi Z. InGaN/GaN dot-in-a-wire: Ultimate terahertz nanostructure Laser and Photonics Reviews. 9: 105-113. DOI: 10.1002/Lpor.201400138 |
0.434 |
|
| 2014 |
Wang R, Nguyen HP, Connie AT, Lee J, Shih I, Mi Z. Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon. Optics Express. 22: A1768-75. PMID 25607491 DOI: 10.1364/Oe.22.0A1768 |
0.387 |
|
| 2014 |
Djavid M, Liu X, Mi Z. Improvement of the light extraction efficiency of GaN-based LEDs using rolled-up nanotube arrays. Optics Express. 22: A1680-6. PMID 25607481 DOI: 10.1364/Oe.22.0A1680 |
0.344 |
|
| 2014 |
Li L, Mu X, Liu W, Kong X, Fan S, Mi Z, Li CJ. Thermal non-oxidative aromatization of light alkanes catalyzed by gallium nitride. Angewandte Chemie (International Ed. in English). 53: 14106-9. PMID 25336448 DOI: 10.1002/Anie.201408754 |
0.494 |
|
| 2014 |
Ferreira JA, Nguyen HP, Mi Z, Leonelli R, Stafford L. Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N₂ plasma. Nanotechnology. 25: 435606. PMID 25299752 DOI: 10.1088/0957-4484/25/43/435606 |
0.371 |
|
| 2014 |
Wang Q, Liu X, Kibria MG, Zhao S, Nguyen HP, Li KH, Mi Z, Gonzalez T, Andrews MP. p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy. Nanoscale. 6: 9970-6. PMID 25074362 DOI: 10.1039/C4Nr01608D |
0.312 |
|
| 2014 |
Salehzadeh O, Tran NH, Liu X, Shih I, Mi Z. Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS₂ light-emitting devices. Nano Letters. 14: 4125-30. PMID 24905765 DOI: 10.1021/Nl5017283 |
0.45 |
|
| 2014 |
Li L, Fan S, Mu X, Mi Z, Li CJ. Photoinduced conversion of methane into benzene over GaN nanowires. Journal of the American Chemical Society. 136: 7793-6. PMID 24826797 DOI: 10.1021/Ja5004119 |
0.581 |
|
| 2014 |
Zhong Q, Tian Z, Veerasubramanian V, Dastjerdi MH, Mi Z, Plant DV. Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit. Optics Letters. 39: 2699-702. PMID 24784081 DOI: 10.1364/Ol.39.002699 |
0.308 |
|
| 2014 |
Kibria MG, Zhao S, Chowdhury FA, Wang Q, Nguyen HP, Trudeau ML, Guo H, Mi Z. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting. Nature Communications. 5: 3825. PMID 24781276 DOI: 10.1038/Ncomms4825 |
0.439 |
|
| 2014 |
Mi Z, Nguyen HPT, Djavid M, Zhang S, Connie AT, Sadaf SM, Wang Q, Zhao S, Shih I. High power phosphor-free InGaN/GaN/AlGaN core-shell nanowire white light emitting diodes on Si substrates Ecs Transactions. 61: 9-15. DOI: 10.1149/06105.0009ecst |
0.342 |
|
| 2014 |
Mi Z, Nguyen HPT, Zhang S, Connie AT, Kibria MG, Wang Q, Shih I. Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 9003. DOI: 10.1117/12.2041284 |
0.411 |
|
| 2014 |
Zhao S, Mi Z, Le BH. p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics Proceedings of Spie. 8986: 898617. DOI: 10.1117/12.2040847 |
0.368 |
|
| 2014 |
Mi Z, Zhao S, Le BH, Salehzadeh O, Alagha S, Kavanagh KL, Watkins SP. Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires Proceedings of Spie - the International Society For Optical Engineering. 8996. DOI: 10.1117/12.2038663 |
0.378 |
|
| 2014 |
Fan S, Zhao S, Liu X, Mi Z. Study on the coalescence of dislocation-free GaN nanowires on Si and SiOx Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 02C114. DOI: 10.1116/1.4865915 |
0.36 |
|
| 2014 |
Connie AT, Nguyen HPT, Sadaf SM, Shih I, Mi Z. Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4865914 |
0.397 |
|
| 2014 |
AlOtaibi B, Fan S, Nguyen HPT, Zhao S, Kibria MG, Mi Z. Photoelectrochemical water splitting and hydrogen generation using InGaN/GaN nanowire arrays Proceedings - 2014 Summer Topicals Meeting Series, Sum 2014. 206-207. DOI: 10.1109/SUM.2014.112 |
0.696 |
|
| 2014 |
Zhang S, Connie AT, Laleyan DA, Nguyen HPT, Wang Q, Song J, Shih I, Mi Z. On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes Ieee Journal of Quantum Electronics. 50: 483-490. DOI: 10.1109/Jqe.2014.2317732 |
0.447 |
|
| 2014 |
Djavid M, Nguyen HPT, Zhang S, Cui K, Fan S, Mi Z. Tunnel injection InGaN/GaN dot-in-a-wire white-light-emitting diodes Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/8/085009 |
0.435 |
|
| 2014 |
Le BH, Zhao S, Tran NH, Mi Z. Electrically injected near-infrared light emission from single InN nanowire p-i-n diode Applied Physics Letters. 105. DOI: 10.1063/1.4904271 |
0.419 |
|
| 2014 |
Wang Q, Zhao S, Connie AT, Shih I, Mi Z, Gonzalez T, Andrews MP, Du XZ, Lin JY, Jiang HX. Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates Applied Physics Letters. 104. DOI: 10.1063/1.4881558 |
0.373 |
|
| 2014 |
Dastjerdi MHT, Mi Z. Nanoscale rolled-up InAs quantum dot tube photodetector Electronics Letters. 50: 680-682. DOI: 10.1049/El.2013.4070 |
0.409 |
|
| 2014 |
Wang C, Chen Z, Jin H, Cao C, Li J, Mi Z. Enhancing visible-light photoelectrochemical water splitting through transition-metal doped TiO2 nanorod arrays Journal of Materials Chemistry A. 2: 17820-17827. DOI: 10.1039/C4Ta04254A |
0.371 |
|
| 2014 |
Nguyen HPT, Wang Q, Mi Z. Phosphor-Free InGaN/GaN Dot-in-a-Wire White Light-Emitting Diodes on Copper Substrates Journal of Electronic Materials. 43: 868-872. DOI: 10.1007/S11664-014-3023-7 |
0.391 |
|
| 2013 |
Zhao S, Le BH, Liu DP, Liu XD, Kibria MG, Szkopek T, Guo H, Mi Z. p-Type InN nanowires. Nano Letters. 13: 5509-13. PMID 24090401 DOI: 10.1021/Nl4030819 |
0.334 |
|
| 2013 |
Nguyen HP, Zhang S, Connie AT, Kibria MG, Wang Q, Shih I, Mi Z. Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes. Nano Letters. 13: 5437-42. PMID 24074440 DOI: 10.1021/Nl4030165 |
0.418 |
|
| 2013 |
Kibria MG, Nguyen HP, Cui K, Zhao S, Liu D, Guo H, Trudeau ML, Paradis S, Hakima AR, Mi Z. One-step overall water splitting under visible light using multiband InGaN/GaN nanowire heterostructures. Acs Nano. 7: 7886-93. PMID 23957654 DOI: 10.1021/Nn4028823 |
0.436 |
|
| 2013 |
Alotaibi B, Nguyen HPT, Zhao S, Kibria MG, Fan S, Mi Z. Highly stable photoelectrochemical water splitting and hydrogen generation using a double-band InGaN/GaN core/shell nanowire photoanode Nano Letters. 13: 4356-4361. PMID 23927558 DOI: 10.1021/Nl402156E |
0.747 |
|
| 2013 |
Li S, Zhang J, Kibria MG, Mi Z, Chaker M, Ma D, Nechache R, Rosei F. Remarkably enhanced photocatalytic activity of laser ablated Au nanoparticle decorated BiFeO3 nanowires under visible-light. Chemical Communications (Cambridge, England). 49: 5856-8. PMID 23702988 DOI: 10.1039/C3Cc40363G |
0.31 |
|
| 2013 |
Zhao S, Kibria MG, Wang Q, Nguyen HP, Mi Z. Growth of large-scale vertically aligned GaN nanowires and their heterostructures with high uniformity on SiO(x) by catalyst-free molecular beam epitaxy. Nanoscale. 5: 5283-7. PMID 23661186 DOI: 10.1039/C3Nr00387F |
0.378 |
|
| 2013 |
AlOtaibi B, Harati M, Fan S, Zhao S, Nguyen HP, Kibria MG, Mi Z. High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode. Nanotechnology. 24: 175401. PMID 23548782 DOI: 10.1088/0957-4484/24/17/175401 |
0.752 |
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| 2013 |
Cardin V, Dion-Bertrand LI, Grégoire P, Nguyen HP, Sakowicz M, Mi Z, Silva C, Leonelli R. Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111). Nanotechnology. 24: 045702. PMID 23299780 DOI: 10.1088/0957-4484/24/4/045702 |
0.35 |
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| 2013 |
Mi Z, Nguyen HPT, Zhang S, Cui K, Djavid M. Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes Proceedings of Spie. 8634. DOI: 10.1117/12.2004498 |
0.481 |
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| 2013 |
Arafin S, Liu X, Mi Z. Review of recent progress of III-nitride nanowire lasers Journal of Nanophotonics. 7: 74599-74599. DOI: 10.1117/1.Jnp.7.074599 |
0.39 |
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| 2013 |
Wang Q, Connie AT, Nguyen HPT, Kibria MG, Zhao S, Sharif S, Shih I, Mi Z. Highly efficient, spectrally pure 340 nm ultraviolet emission from Al xGa1-xN nanowire based light emitting diodes Nanotechnology. 24. DOI: 10.1088/0957-4484/24/34/345201 |
0.487 |
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| 2013 |
Alotaibi B, Harati M, Fan S, Zhao S, Nguyen HPT, Kibria MG, Mi Z. High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode Nanotechnology. 24. DOI: 10.1088/0957-4484/24/17/175401 |
0.737 |
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| 2013 |
Dastjerdi MHT, Djavid M, Arafin S, Liu X, Bianucci P, Mi Z, Poole PJ. Optically pumped rolled-up InAs/InGaAsP quantum dash lasers at room temperature Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/9/094007 |
0.396 |
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| 2013 |
Hong Tran N, Huy Le B, Fan S, Zhao S, Mi Z, Schmidt BA, Savard M, Gervais G, Butcher KSA. Optical and structural characterization of nitrogen-rich InN: Transition from nearly intrinsic to strongly n-type degenerate with temperature Applied Physics Letters. 103. DOI: 10.1063/1.4857535 |
0.36 |
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| 2013 |
Zhao S, Liu X, Mi Z. Photoluminescence properties of Mg-doped InN nanowires Applied Physics Letters. 103: 203113. DOI: 10.1063/1.4831895 |
0.339 |
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| 2013 |
Kamali Y, Walsh BR, Mooney J, Nguyen H, Brosseau C, Leonelli R, Mi Z, Kambhampati P. Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4826618 |
0.395 |
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| 2013 |
Zhang S, Li Y, Fathololoumi S, Nguyen HPT, Wang Q, Mi Z, Li Q, Wang GT. On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping Aip Advances. 3: 082103. DOI: 10.1063/1.4817834 |
0.438 |
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| 2013 |
Titus J, Nguyen HPT, Mi Z, Perera AGU. Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4798245 |
0.401 |
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| 2013 |
Zhao S, Salehzadeh O, Alagha S, Kavanagh KL, Watkins SP, Mi Z. Probing the electrical transport properties of intrinsic InN nanowires Applied Physics Letters. 102. DOI: 10.1063/1.4792699 |
0.341 |
|
| 2012 |
Zhao S, Wang Q, Mi Z, Fathololoumi S, Gonzalez T, Andrews MP. Observation of phonon sideband emission in intrinsic InN nanowires: a photoluminescence and micro-Raman scattering study. Nanotechnology. 23: 415706. PMID 23018196 DOI: 10.1088/0957-4484/23/41/415706 |
0.314 |
|
| 2012 |
Tian Z, Bianucci P, Roche PJ, Dastjerdi MH, Mi Z, Poole PJ, Kirk AG, Plant DV. Dynamical thermal effects in InGaAsP microtubes at telecom wavelengths. Optics Letters. 37: 2712-4. PMID 22743504 DOI: 10.1364/Ol.37.002712 |
0.352 |
|
| 2012 |
Zhao S, Fathololoumi S, Bevan KH, Liu DP, Kibria MG, Li Q, Wang GT, Guo H, Mi Z. Tuning the surface charge properties of epitaxial InN nanowires Nano Letters. 12: 2877-2882. PMID 22545811 DOI: 10.1021/Nl300476D |
0.35 |
|
| 2012 |
Nguyen HP, Djavid M, Cui K, Mi Z. Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon. Nanotechnology. 23: 194012. PMID 22539212 DOI: 10.1088/0957-4484/23/19/194012 |
0.443 |
|
| 2012 |
Cui K, Fathololoumi S, Golam Kibria M, Botton GA, Mi Z. Molecular beam epitaxial growth and characterization of catalyst-free InN/InxGa1-xN core/shell nanowire heterostructures on Si(111) substrates. Nanotechnology. 23: 085205. PMID 22293649 DOI: 10.1088/0957-4484/23/8/085205 |
0.422 |
|
| 2012 |
Nguyen HP, Cui K, Zhang S, Djavid M, Korinek A, Botton GA, Mi Z. Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes. Nano Letters. 12: 1317-23. PMID 22283508 DOI: 10.1021/Nl203860B |
0.457 |
|
| 2012 |
Chen Z, Li Y, Cao C, Zhao S, Fathololoumi S, Mi Z, Xu X. Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement. Journal of the American Chemical Society. 134: 780-3. PMID 22224725 DOI: 10.1021/Ja209072V |
0.342 |
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| 2012 |
Nguyen HPT, Zhang S, Cui K, Korinek A, Botton GA, Mi Z. High-efficiency InGaN/GaN dot-in-a-wire red light-emitting diodes Ieee Photonics Technology Letters. 24: 321-323. DOI: 10.1109/Lpt.2011.2178091 |
0.491 |
|
| 2012 |
Zhao S, Mi Z, Kibria MG, Li Q, Wang GT. Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires Physical Review B. 85. DOI: 10.1103/Physrevb.85.245313 |
0.409 |
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| 2012 |
Wang Q, Nguyen HPT, Cui K, Mi Z. High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy Applied Physics Letters. 101: 043115. DOI: 10.1063/1.4738983 |
0.428 |
|
| 2012 |
Bianucci P, Mukherjee S, Dastjerdi MHT, Poole PJ, Mi Z. Self-organized InAs/InGaAsP quantum dot tube lasers Applied Physics Letters. 101. DOI: 10.1063/1.4737425 |
0.424 |
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| 2012 |
Woo S, Gauquelin N, Botton G, Turner S, Mi Z. Measurement of Indium-Content Variation in InGaN/GaN Dot-in-a-Wire Nanostructures by Electron Energy-Loss Spectroscopy Microscopy and Microanalysis. 18: 1820-1821. DOI: 10.1017/S1431927612010951 |
0.331 |
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| 2012 |
Mi Z, Bianucci P. When self-organized In(Ga)As/GaAs quantum dot heterostructures roll up: Emerging devices and applications Current Opinion in Solid State and Materials Science. 16: 52-58. DOI: 10.1016/J.Cossms.2011.09.001 |
0.414 |
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| 2011 |
Li Q, Westlake KR, Crawford MH, Lee SR, Koleske DD, Figiel JJ, Cross KC, Fathololoumi S, Mi Z, Wang GT. Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays. Optics Express. 19: 25528-34. PMID 22273946 DOI: 10.1364/Oe.19.025528 |
0.428 |
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| 2011 |
Nguyen HP, Cui K, Zhang S, Fathololoumi S, Mi Z. Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon. Nanotechnology. 22: 445202. PMID 21975473 DOI: 10.1088/0957-4484/22/44/445202 |
0.496 |
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| 2011 |
Tian Z, Veerasubramanian V, Bianucci P, Mi Z, Kirk AG, Plant DV. Selective polarization mode excitation in InGaAs/GaAs microtubes. Optics Letters. 36: 3506-8. PMID 21886259 DOI: 10.1364/Ol.36.003506 |
0.332 |
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| 2011 |
Tian Z, Veerasubramanian V, Bianucci P, Mukherjee S, Mi Z, Kirk AG, Plant DV. Single rolled-up InGaAs/GaAs quantum dot microtubes integrated with silicon-on-insulator waveguides. Optics Express. 19: 12164-71. PMID 21716453 DOI: 10.1364/Oe.19.012164 |
0.415 |
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| 2011 |
Wang D, Pierre A, Kibria MG, Cui K, Han X, Bevan KH, Guo H, Paradis S, Hakima AR, Mi Z. Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy. Nano Letters. 11: 2353-7. PMID 21568321 DOI: 10.1021/Nl2006802 |
0.329 |
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| 2011 |
Nguyen HP, Zhang S, Cui K, Han X, Fathololoumi S, Couillard M, Botton GA, Mi Z. p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). Nano Letters. 11: 1919-24. PMID 21517080 DOI: 10.1021/Nl104536X |
0.492 |
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| 2011 |
Mi Z, Bianucci P, Li F, Tian Z, Veerasubramanian V, Kirk AG, Plant DV, Poole PJ. Self-organized InAs quantum dot tube lasers and integrated optoelectronics on Si Proceedings of Spie - the International Society For Optical Engineering. 7943. DOI: 10.1117/12.876172 |
0.426 |
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| 2011 |
Tian Z, Veerasubramanian V, Bianucci P, Mi Z, Kirk AG, Plant DV. Characterization of InGaAs/GaAs microtubes at transparent wavelengths Ieee Photonic Society 24th Annual Meeting, Pho 2011. 745-746. DOI: 10.1109/Pho.2011.6110765 |
0.331 |
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| 2011 |
Mi Z, Bianucci P, Dastjerdi MHT, Mukherjee S, Tian Z, Veerasubramanian V, Kirk AG, Plant DV. 1.3 - 1.55 μm self-organized InAs quantum dot tube nanoscale lasers on silicon Ieee Photonic Society 24th Annual Meeting, Pho 2011. 535-536. DOI: 10.1109/Pho.2011.6110658 |
0.438 |
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| 2011 |
Nguyen HPT, Cui K, Zhang S, Fathololoumi S, Mi Z. Study on the quantum efficiency enhancement in InGaN/GaN dot-in-a-wire light emitting diodes grown by molecular beam epitaxy Photomedicine and Laser Surgery. 65-66. DOI: 10.1109/Pho.2011.6110427 |
0.471 |
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| 2011 |
Nguyen HPT, Chang Y, Shih I, Mi Z. InN p-i-n Nanowire Solar Cells on Si Ieee Journal of Selected Topics in Quantum Electronics. 17: 1062-1069. DOI: 10.1109/Jstqe.2010.2082505 |
0.406 |
|
| 2011 |
Qiu J, Shih A, Zhou W, Mi Z, Shih I. Effects of metal contacts and dopants on the performance of ZnO-based memristive devices Journal of Applied Physics. 110. DOI: 10.1063/1.3599952 |
0.34 |
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| 2010 |
Chang Y, Li F, Mi Z. Optimization of the structural and optical quality of InN nanowires on Si(111) by molecular beam epitaxy Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C3B7-C3B11. DOI: 10.1116/1.3292560 |
0.361 |
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| 2010 |
Tian Z, Li F, Mi Z, Plant DV. Controlled Transfer of Single Rolled-Up InGaAs–GaAs Quantum-Dot Microtube Ring Resonators Using Optical Fiber Abrupt Tapers Ieee Photonics Technology Letters. 22: 311-313. DOI: 10.1109/Lpt.2009.2039209 |
0.385 |
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| 2010 |
Chang Y, Wang JL, Li F, Mi Z. High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si(111) Applied Physics Letters. 96: 013106. DOI: 10.1063/1.3284660 |
0.454 |
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| 2010 |
Chang YL, Mi Z, Li F. Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire Advanced Functional Materials. 20: 4146-4151. DOI: 10.1002/Adfm.201000739 |
0.428 |
|
| 2009 |
Li F, Mi Z. Optically pumped rolled-up InGaAs/GaAs quantum dot microtube lasers. Optics Express. 17: 19933-9. PMID 19997217 DOI: 10.1364/Oe.17.019933 |
0.436 |
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| 2009 |
Li F, Mi Z, Vicknesh S. Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes. Optics Letters. 34: 2915-7. PMID 19794766 DOI: 10.1364/Ol.34.002915 |
0.394 |
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| 2009 |
Chang YL, Li F, Fatehi A, Mi Z. Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111). Nanotechnology. 20: 345203. PMID 19652279 DOI: 10.1088/0957-4484/20/34/345203 |
0.364 |
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| 2009 |
Chang Y, Fatehi A, Li F, Mi Z. Controlled growth and characterization of non-tapered InN nanowires on Si(111) substrates by molecular beam epitaxy Mrs Proceedings. 1178: 25-30. DOI: 10.1557/Proc-1178-Aa01-12 |
0.313 |
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| 2009 |
Mi Z. III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers Journal of Nanophotonics. 3: 031602. DOI: 10.1117/1.3081051 |
0.486 |
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| 2009 |
Vicknesh S, Li F, Mi Z. Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes Applied Physics Letters. 94: 081101. DOI: 10.1063/1.3086333 |
0.418 |
|
| 2009 |
Li F, Vicknesh S, Mi Z. Optical modes in InGaAs/GaAs quantum dot microtube ring resonators at room temperature Electronics Letters. 45: 645. DOI: 10.1049/El.2009.1076 |
0.357 |
|
| 2009 |
Zhang M, Moore J, Mi Z, Bhattacharya P. Polarization effects in self-organized InGaN/GaN quantum dots grown by RF-plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 311: 2069-2072. DOI: 10.1016/J.Jcrysgro.2008.10.042 |
0.423 |
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| 2009 |
Bhattacharya P, Mi Z, Yang J, Basu D, Saha D. Quantum dot lasers: From promise to high-performance devices Journal of Crystal Growth. 311: 1625-1631. DOI: 10.1016/J.Jcrysgro.2008.09.035 |
0.797 |
|
| 2008 |
Mi Z, Bhattacharya P. Pseudomorphic and Metamorphic Quantum Dot Heterostructures for Long-Wavelength Lasers on GaAs and Si Ieee Journal of Selected Topics in Quantum Electronics. 14: 1171-1179. DOI: 10.1109/Jstqe.2008.923295 |
0.447 |
|
| 2008 |
Basu D, Saha D, Wu CC, Holub M, Mi Z, Bhattacharya P. Electrically injected InAs∕GaAs quantum dot spin laser operating at 200K Applied Physics Letters. 92: 91119. DOI: 10.1063/1.2883953 |
0.777 |
|
| 2007 |
Chakravarty S, Bhattacharya P, Chakrabarti S, Mi Z. Multiwavelength ultralow-threshold lasing in quantum dot photonic crystal microcavities. Optics Letters. 32: 1296-8. PMID 17440566 DOI: 10.1364/Ol.32.001296 |
0.358 |
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| 2007 |
Yang J, Bhattacharya P, Mi Z. High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters Ieee Transactions On Electron Devices. 54: 2849-2855. DOI: 10.1109/Ted.2007.906928 |
0.452 |
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| 2007 |
Mi Z, Bhattacharya P. Analysis of the Linewidth-Enhancement Factor of Long-Wavelength Tunnel-Injection Quantum-Dot Lasers Ieee Journal of Quantum Electronics. 43: 363-369. DOI: 10.1109/Jqe.2007.893895 |
0.402 |
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| 2007 |
Yang J, Mi Z, Bhattacharya P. Groove-Coupled InGaAs/GaAs Quantum Dot Laser/Waveguide on Silicon Journal of Lightwave Technology. 25: 1826-1831. DOI: 10.1109/Jlt.2007.899165 |
0.398 |
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| 2007 |
George AA, Smowton PM, Mi Z, Bhattacharya P. Long wavelength quantum-dot lasers selectively populated using tunnel injection Semiconductor Science and Technology. 22: 557-560. DOI: 10.1088/0268-1242/22/5/018 |
0.575 |
|
| 2007 |
Wu Z, Mi Z, Bhattacharya P, Zhu T, Xu J. Enhanced spontaneous emission at 1.55μm from colloidal PbSe quantum dots in a Si photonic crystal microcavity Applied Physics Letters. 90: 171105. DOI: 10.1063/1.2731657 |
0.404 |
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| 2007 |
Jallipalli A, Kutty MN, Balakrishnan G, Tatebayashi J, Nuntawong N, Huang SH, Dawson LR, Huffaker DL, Mi Z, Bhattacharya P. 1.54μm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays Electronics Letters. 43: 1198-1199. DOI: 10.1049/El:20072441 |
0.421 |
|
| 2007 |
Mi Z, Yang J, Bhattacharya P. Molecular beam epitaxial growth and characteristics of ultra-low threshold 1.45 μm metamorphic InAs quantum dot lasers on GaAs Journal of Crystal Growth. 301: 923-926. DOI: 10.1016/J.Jcrysgro.2006.11.112 |
0.434 |
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| 2006 |
Bhattacharya P, Mi Z, Su X. High-performance quantum dot optoelectronic devices Frontiers in Optics. DOI: 10.1364/Fio.2006.Fwg1 |
0.735 |
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| 2006 |
Bhattacharya P, Mi Z, Yang J, Fathpour S. High performance 1.3 μm quantum dot lasers on GaAs and silicon Proceedings of Spie - the International Society For Optical Engineering. 6133. DOI: 10.1117/12.641472 |
0.647 |
|
| 2006 |
Mi Z, Yang J, Bhattacharya P, Chan PKL, Pipe KP. High performance self-organized InGaAs quantum dot lasers on silicon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1519. DOI: 10.1116/1.2190673 |
0.353 |
|
| 2006 |
Chakravarty S, Bhattacharya P, Mi Z. Electrically Injected Quantum-Dot Photonic Crystal Microcavity Light-Emitting Arrays With Air-Bridge Contacts Ieee Photonics Technology Letters. 18: 2665-2667. DOI: 10.1109/Lpt.2006.887789 |
0.405 |
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| 2006 |
Mi Z, Yang J, Bhattacharya P. Growth and characteristics of P-doped InAs tunnel injection quantum-dash lasers on InP Ieee Photonics Technology Letters. 18: 1377-1379. DOI: 10.1109/Lpt.2006.877341 |
0.419 |
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| 2006 |
Mi Z, Bhattacharya P. DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001) Ieee Journal of Quantum Electronics. 42: 1224-1232. DOI: 10.1109/Jqe.2006.883497 |
0.428 |
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| 2006 |
Tan H, Kamath KK, Mi Z, Bhattacharya P, Klotzkin D. Analysis of the reduced thermal conductivity in InGaAs∕GaAs quantum dot lasers from chirp characteristics Applied Physics Letters. 89: 121116. DOI: 10.1063/1.2354415 |
0.537 |
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| 2006 |
Chan PKL, Pipe KP, Mi Z, Yang J, Bhattacharya P, Lüerßen D. Thermal relaxation time and heat distribution in pulsed InGaAs quantum dot lasers Applied Physics Letters. 89: 011110. DOI: 10.1063/1.2219721 |
0.303 |
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| 2006 |
Mi Z, Yang J, Bhattacharya P, Huffaker DL. Self-organised quantum dots as dislocation filters: The case of GaAs-based lasers on silicon Electronics Letters. 42: 121-123. DOI: 10.1049/El:20063582 |
0.422 |
|
| 2005 |
Mi Z, Fathpour S, Bhattacharya P, Kovsh AR, Mikhrin SS, Krestnoikov IL, Kozhukhov AV, Ledentsov NN. Temperature dependent output characteristics of p-doped 1.1 and 1.3 μm quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 5722: 60-71. DOI: 10.1117/12.589891 |
0.64 |
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| 2005 |
Fathpour S, Mi Z, Bhattacharya P. Small-signal modulation characteristics of p-doped 1.1- and 1.3-μm quantum-dot lasers Ieee Photonics Technology Letters. 17: 2250-2252. DOI: 10.1109/Lpt.2005.857242 |
0.654 |
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| 2005 |
Fathpour S, Mi Z, Bhattacharya P. High-speed quantum dot lasers Journal of Physics D: Applied Physics. 38: 2103-2111. DOI: 10.1088/0022-3727/38/13/005 |
0.654 |
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| 2005 |
Mi Z, Bhattacharya P. Molecular-beam epitaxial growth and characteristics of highly uniform InAs∕GaAs quantum dot layers Journal of Applied Physics. 98: 023510. DOI: 10.1063/1.1985969 |
0.573 |
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| 2005 |
Mi Z, Bhattacharya P, Fathpour S. High-speed 1.3 μm tunnel injection quantum-dot lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1899230 |
0.65 |
|
| 2005 |
Mi Z, Fathpour S, Bhattacharya P. Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures Electronics Letters. 41: 35-36. DOI: 10.1049/El:20053374 |
0.673 |
|
| 2005 |
Mi Z, Bhattacharya P, Yang J, Pipe K. Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon Electronics Letters. 41: 742. DOI: 10.1049/El:20051558 |
0.403 |
|
| 2004 |
Fathpour S, Mi Z, Chakrabarti S, Bhattacharya P, Kovsh AR, Mikhrin SS, Krestnikov IL, Kozhukhov AV, Ledentsov NN. Characteristics of high-performance 1.0 μm and 1.3 μm quantum dot lasers: Impact of p-doping and tunnel injection Device Research Conference - Conference Digest, Drc. 156-157. DOI: 10.1109/DRC.2004.1367834 |
0.625 |
|
| 2004 |
Fathpour S, Mi Z, Bhattacharya P, Kovsh AR, Mikhrin SS, Krestnikov IL, Kozhukhov AV, Ledentsov NN. The role of Auger recombination in the temperature-dependent output characteristics (T0=∞) of p-doped 1.3 μm quantum dot lasers Applied Physics Letters. 85: 5164-5166. DOI: 10.1063/1.1829158 |
0.651 |
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