| Year |
Citation |
Score |
| 2011 |
Aebi VW, Sykora DF, Jurkovic MJ, Costello KA. Multichannel intensified photodiode for near infrared single photon detection Proceedings of Spie - the International Society For Optical Engineering. 8033. DOI: 10.1117/12.884325 |
0.35 |
|
| 2001 |
Bewley WW, Vurgaftman I, Bartolo RE, Jurkovic MJ, Felix CL, Meyer JR, Lee H, Martinelli RU, Turner GW, Manfra MJ. Beam quality of mid-infrared angled-grating distributed-feedback lasers Proceedings of Spie - the International Society For Optical Engineering. 4287: 33-40. DOI: 10.1117/12.429803 |
0.468 |
|
| 2001 |
Bewley WW, Vurgaftman I, Bartolo RE, Jurkovic MJ, Felix CL, Meyer JR, Lee H, Martinelli RU, Turner GW, Manfra MJ. Beam quality issues for mid-infrared angled-grating distributed feedback lasers Conference On Lasers and Electro-Optics Europe - Technical Digest. 53-54. |
0.462 |
|
| 2000 |
Yang X, Heroux JB, Jurkovic MJ, Wang WI. High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1484-1487. DOI: 10.1116/1.591409 |
0.773 |
|
| 2000 |
Yang X, Heroux JB, Jurkovic MJ, Wang WI. Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy Ieee Photonics Technology Letters. 12: 128-130. DOI: 10.1109/68.823492 |
0.775 |
|
| 2000 |
Bewley WW, Felix CL, Vurgaftman I, Bartolo RE, Stokes DW, Jurkovic MJ, Lindle JR, Meyer JR, Yang MJ, Lee H, Menna RJ, Martinelli RU, Garbuzov DZ, Connolly JC, Maiorov M. Mid-IR broadened-waveguide and angled-grating distributed feedback (α-DFB) `W' quantum well lasers Conference Digest - Ieee International Semiconductor Laser Conference. 127-128. |
0.523 |
|
| 2000 |
Jurkovic MJ, Li LK, Turk B, Wang WI, Syed S, Simonian D, Stormer HL. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer Materials Research Society Symposium - Proceedings. 595: W811-W817. |
0.404 |
|
| 2000 |
Semendy F, Li LK, Jurkovic MJ, Wang WI. Characterization of InGaN quantum wells grown by molecular beam epitaxy (MBE) using Ammonia as the Nitrogen Source Materials Research Society Symposium - Proceedings. 595: W11371-W11375. |
0.587 |
|
| 2000 |
Bartolo RE, Bewley WW, Vurgaftman I, Felix CL, Jurkovic MJ, Meyer JR, Yang MJ, Lee H, Martinelli RU, Manfra MJ, Turner GW. Mid-IR angled-grating distributed feedback (α-DFB) 'W' lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 245-246. |
0.333 |
|
| 2000 |
Vurgaftman I, Bewley WW, Bartolo RE, Felix CL, Jurkovic MJ, Meyer JR, Yang MJ, Lee H, Martinelli RU. Far-field characteristics of mid-infrared angled-grating distributed feedback lasers Journal of Applied Physics. 88: 6997-7005. |
0.341 |
|
| 2000 |
Yang X, Heroux JB, Jurkovic MJ, Wang WI. High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy Applied Physics Letters. 76: 795-797. |
0.759 |
|
| 1999 |
Yang X, Jurkovic MJ, Heroux JB, Wang WI. Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant Electronics Letters. 35: 1082-1083. DOI: 10.1049/el:19990763 |
0.773 |
|
| 1999 |
Yang X, Jurkovic MJ, Heroux JB, Wang WI. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. 75: 178-180. |
0.762 |
|
| 1998 |
Jurkovic MJ, Alperin J, Du Q, Wang WI, Chang MF. AlGaAs/GaAs Npn heterojunction bipolar transistors grown on Si (311) by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1401-1403. |
0.393 |
|
| 1997 |
Li XM, Jimenez JL, Jurkovic MJ, Wang WI. Novel approach for integration of an AlGaAs/GaAs heterojunction bipolar transistor with an InGaAs quantum well laser Proceedings of Spie - the International Society For Optical Engineering. 3006: 126-133. DOI: 10.1117/12.264210 |
0.661 |
|
| 1997 |
Jurkovic MJ, Alperin J, Du Q, Wang WI, Chang MF. AIGaAs/GaAs npn heterojunction bipolar transistors grown by molecular beam epitaxy on Si (311) Electronics Letters. 33: 1658-1659. |
0.357 |
|
| 1997 |
Jurkovic MJ, Du Q, Jimenez JL, Wang WI. Compact GaAs-based second-harmonic generation horizontal cavity surface-emitting blue lasers Proceedings of Spie - the International Society For Optical Engineering. 3001: 199-210. |
0.505 |
|
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