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Nathan A. Pfaff, Ph.D. - Publications

Affiliations: 
2013 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Cantore M, Pfaff N, Farrell RM, Speck JS, Nakamura S, DenBaars SP. High luminous flux from single crystal phosphor-converted laser-based white lighting system. Optics Express. 24: A215-21. PMID 26832576 DOI: 10.1364/Oe.24.00A215  0.662
2014 Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP, Mishra UK. Recent progress in metal-organic chemical vapor deposition of (0001¯) N-polar group-III nitrides Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/11/113001  0.527
2013 Pfaff NA, Kelchner KM, Feezell DF, Nakamura S, DenBaars SP, Speck JS. Thermal performance of violet and blue single-quantum-well nonpolar m-plane InGaN light-emitting diodes Applied Physics Express. 6. DOI: 10.7567/Apex.6.092104  0.787
2013 Denbaars SP, Feezell D, Kelchner K, Pimputkar S, Pan CC, Yen CC, Tanaka S, Zhao Y, Pfaff N, Farrell R, Iza M, Keller S, Mishra U, Speck JS, Nakamura S. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays Acta Materialia. 61: 945-951. DOI: 10.1016/J.Actamat.2012.10.042  0.793
2012 Pan CC, Gilbert T, Pfaff N, Tanaka S, Zhao Y, Feezell D, Speck JS, Nakamura S, DenBaars SP. Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes Applied Physics Express. 5. DOI: 10.1143/Apex.5.102103  0.754
2012 Keller S, Pfaff N, Denbaars SP, Mishra UK. Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000 1̄) GaN Applied Physics Letters. 101. DOI: 10.1063/1.4764070  0.7
2012 Chung RB, Han C, Pan CC, Pfaff N, Speck JS, Denbaars SP, Nakamura S. The reduction of efficiency droop by Al 0.82In 0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4756791  0.687
2012 Haeger DA, Young EC, Chung RB, Wu F, Pfaff NA, Tsai M, Fujito K, Denbaars SP, Speck JS, Nakamura S, Cohen DA. 384 nm laser diode grown on a (202̄1) semipolar relaxed AlGaN buffer layer Applied Physics Letters. 100. DOI: 10.1063/1.4704560  0.609
2012 Hu YL, Farrell RM, Neufeld CJ, Iza M, Cruz SC, Pfaff N, Simeonov D, Keller S, Nakamura S, Denbaars SP, Mishra UK, Speck JS. Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells Applied Physics Letters. 100. DOI: 10.1063/1.4704189  0.757
2012 Garrett GA, Rotella P, Shen H, Wraback M, Haeger DA, Chung RB, Pfaff N, Young EC, Denbaars SP, Speck JS, Cohen DA. Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN Physica Status Solidi (B) Basic Research. 249: 507-510. DOI: 10.1002/Pssb.201100528  0.593
2011 Brinkley SE, Pfaff N, Denault KA, Zhang Z, Hintzen HT, Seshadri R, Nakamura S, Denbaars SP. Robust thermal performance of Sr 2Si 5N 8:Eu 2+: An efficient red emitting phosphor for light emitting diode based white lighting Applied Physics Letters. 99. DOI: 10.1063/1.3666785  0.776
2011 Brinkley SE, Lin YD, Chakraborty A, Pfaff N, Cohen D, Speck JS, Nakamura S, Denbaars SP. Polarized spontaneous emission from blue-green m -plane GaN-based light emitting diodes Applied Physics Letters. 98. DOI: 10.1063/1.3541655  0.798
2010 Chung RB, Lin YD, Koslow I, Pfaff N, Ohta H, Ha J, DenBaars SP, Nakamura S. Electroluminescence characterization of (202̄21) InGaN/GaN light emitting diodes with various wavelengths Japanese Journal of Applied Physics. 49: 0702031-0702033. DOI: 10.1143/Jjap.49.070203  0.787
2010 Matioli E, Rangel E, Iza M, Fleury B, Pfaff N, Speck J, Hu E, Weisbuch C. High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals Applied Physics Letters. 96. DOI: 10.1063/1.3293442  0.536
2009 Masui H, Sonoda J, Chakraborty A, Yamada H, Iso K, Pfaff N, Koslow I, Nakamura S, DenBaars SP. Customized filter cube in fluorescence microscope measurements of InGaN/GaN quantum-well characterization Japanese Journal of Applied Physics. 48: 0980031-0980032. DOI: 10.1143/Jjap.48.098003  0.778
2009 Zhong H, Tyagi A, Pfaff N, Saito M, Fujito K, Speck JS, Denbaars SP, Nakamura S. Enhancing the light extraction efficiency of blue semipolar (101̄1̄) nitride-based light emitting diodes through surface patterning Japanese Journal of Applied Physics. 48: 030201. DOI: 10.1143/Jjap.48.030201  0.572
2008 Masui H, Sonoda J, Pfaff N, Koslow I, Nakamura S, Denbaars SP. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/16/165105  0.777
2008 Saini S, Hong CY, Pfaff N, Kimerling LC, Michel J. Partial confinement photonic crystal waveguides Applied Physics Letters. 93. DOI: 10.1063/1.3059553  0.302
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