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Hongtao Xu, Ph.D. - Publications

Affiliations: 
2005 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen B, Luo W, Wang F, Lin Y, Yan N, Xu H. A 22.5–31.2-GHz Continuously Tuning Frequency Synthesizer With 8.7-GHz Chirp for FMCW Applications Ieee Microwave and Wireless Components Letters. 30: 904-907. DOI: 10.1109/Lmwc.2020.3010089  0.42
2020 Yin Y, Li T, Xiong L, Li Y, Min H, Yan N, Xu H. A Broadband Switched-Transformer Digital Power Amplifier for Deep Back-Off Efficiency Enhancement Ieee Journal of Solid-State Circuits. 1-1. DOI: 10.1109/Jssc.2020.3005798  0.358
2020 Xu H. Introduction to the Special Section on the 2019 RFIC Symposium Ieee Journal of Solid-State Circuits. 55: 1127-1127. DOI: 10.1109/Jssc.2020.2982726  0.314
2019 Luo W, Yin Y, Xiong L, Li T, Xu H. Nonlinear Analytical Model for Switched-Capacitor Class-D RF Power Amplifiers Ieee Transactions On Circuits and Systems I-Regular Papers. 66: 2309-2321. DOI: 10.1109/Tcsi.2019.2892566  0.344
2019 Deng J, Guo Z, Zhang Y, Cao X, Zhang S, Sheng Y, Xu H, Bao W, Wan J. MoS 2 /Silicon-on-Insulator Heterojunction Field-Effect-Transistor for High-Performance Photodetection Ieee Electron Device Letters. 40: 423-426. DOI: 10.1109/Led.2019.2892782  0.306
2019 Yin Y, Xiong L, Zhu Y, Chen B, Min H, Xu H. A Compact Dual-Band Digital Polar Doherty Power Amplifier Using Parallel-Combining Transformer Ieee Journal of Solid-State Circuits. 54: 1575-1585. DOI: 10.1109/Jssc.2019.2896407  0.377
2019 Yin Y, Zhu Y, Xiong L, Luo W, Chen B, Li T, Yan N, Xu H. A Compact Transformer-Combined Polar/Quadrature Reconfigurable Digital Power Amplifier in 28-nm Logic LP CMOS Ieee Journal of Solid-State Circuits. 54: 709-719. DOI: 10.1109/Jssc.2018.2878831  0.349
2018 Li T, Yin Y, Zhu Y, Xiong L, Liu Y, Yan N, Min H, Xu H. A Wideband Efficiency-Enhanced Class-G Digital Power Amplifier for IoT Applications Ieee Microwave and Wireless Components Letters. 28: 714-716. DOI: 10.1109/Lmwc.2018.2847456  0.424
2017 Chang Y, Ye Y, Xu H, Domier C, Luhmann N, Gu QJ. An ultra-wideband CMOS PA with dummy filling for reliability Solid-State Electronics. 129: 125-133. DOI: 10.1016/J.Sse.2016.11.015  0.435
2012 Ravi A, Madoglio P, Xu H, Chandrashekar K, Verhelst M, Pellerano S, Cuellar L, Aguirre-Hernandez M, Sajadieh M, Zarate-Roldan JE, Bochobza-Degani O, Lakdawala H, Palaskas Y. A 2.4-GHz 20–40-MHz Channel WLAN Digital Outphasing Transmitter Utilizing a Delay-Based Wideband Phase Modulator in 32-nm CMOS Ieee Journal of Solid-State Circuits. 47: 3184-3196. DOI: 10.1109/Jssc.2012.2216671  0.41
2012 Tai W, Xu H, Ravi A, Lakdawala H, Bochobza-Degani O, Carley LR, Palaskas Y. A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement Ieee Journal of Solid-State Circuits. 47: 1646-1658. DOI: 10.1109/Jssc.2012.2191674  0.375
2011 Xu H, Palaskas Y, Ravi A, Sajadieh M, El-Tanani MA, Soumyanath K. A Flip-Chip-Packaged 25.3 dBm Class-D Outphasing Power Amplifier in 32 nm CMOS for WLAN Application Ieee Journal of Solid-State Circuits. 46: 1596-1605. DOI: 10.1109/Jssc.2011.2143930  0.378
2006 Xu H, Gao S, Heikman S, Long SI, Mishra UK, York RA. A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz Ieee Microwave and Wireless Components Letters. 16: 22-24. DOI: 10.1109/Lmwc.2005.861355  0.588
2006 Gao S, Xu H, Heikman S, Mishra UK, York RA. Two-stage quasi-class-E power amplifier in GaN HEMT technology Ieee Microwave and Wireless Components Letters. 16: 28-30. DOI: 10.1109/Lmwc.2005.861353  0.597
2006 Sanabria C, Chakraborty A, Xu H, Rodwell MJ, Mishra UK, York RA. The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs Ieee Electron Device Letters. 27: 19-21. DOI: 10.1109/Led.2005.860889  0.756
2006 Xu H, Pervez NK, York RA. Tunable microwave integrated circuits using BST thin film capacitors with device structure optimization Integrated Ferroelectrics. 77: 27-35. DOI: 10.1080/10584580500413681  0.762
2005 Sanabria C, Xu H, Palacios T, Chakraborty A, Heikman S, Mishra UK, York RA. Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs Ieee Transactions On Microwave Theory and Techniques. 53: 762-768. DOI: 10.1109/Tmtt.2004.840578  0.742
2005 Sanabria C, Xu H, Heikman S, Mishra UK, York RA. A GaN differential oscillator with improved harmonic performance Ieee Microwave and Wireless Components Letters. 15: 463-465. DOI: 10.1109/Lmwc.2005.851563  0.758
2004 Xu H, Sanabria C, Chini A, Wei Y, Heikman S, Keller S, Mishra UK, York RA. A new field-plated GaN HEMT structure with improved power and noise performance International Journal of High Speed Electronics and Systems. 14: 810-815. DOI: 10.1142/S0129156404002879  0.745
2004 Xu H, Sanabria C, Chini A, Keller S, Mishra UK, York RA. A C-band high-dynamic range GaN HEMT low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 262-264. DOI: 10.1109/Lmwc.2004.828020  0.772
2004 Xu H, Pervez NK, Hansen PJ, Shen L, Keller S, Mishra UK, York RA. Integration of BaxSr1-xTiO3 Thin Films with AlGaN/GaN HEMT Circuits Ieee Electron Device Letters. 25: 49-51. DOI: 10.1109/Led.2003.822672  0.738
2003 Xu H, Pervez NK, Hansen PJ, Sanabria C, Shen L, Keller S, Mishra UK, York RA. Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/ thin films with AlGaN/GaN HEMT circuits Ieee Electron Device Letters. 25: 273-278. DOI: 10.1109/Edmo.2003.1260077  0.719
2002 Serraiocco J, Acikel B, Hansen P, Taylor T, Xu H, Speck JS, York RA. Tunable passive integrated circuits using BST thin films Integrated Ferroelectrics. 49: 161-170. DOI: 10.1080/10584580215481  0.732
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