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Gerhard Klimeck - Publications

Affiliations: 
Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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297 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen C, Ilatikhameneh H, Huang JZ, Klimeck G, Povolotskyi M. Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation Ieee Transactions On Electron Devices. 67: 3478-3485. DOI: 10.1109/Ted.2020.3002220  0.419
2019 Pang CS, Chen CY, Ameen T, Zhang S, Ilatikhameneh H, Rahman R, Klimeck G, Chen Z. WSe Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing. Small (Weinheim An Der Bergstrasse, Germany). e1902770. PMID 31448564 DOI: 10.1002/Smll.201902770  0.706
2019 Ameen TA, Ilatikhameneh H, Fay P, Seabaugh A, Rahman R, Klimeck G. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742. DOI: 10.1109/Ted.2018.2877753  0.689
2019 Chu Y, Lu S, Chowdhury N, Povolotskyi M, Klimeck G, Mohamed M, Palacios T. Superior Performance of 5-nm Gate Length GaN Nanowire nFET for Digital Logic Applications Ieee Electron Device Letters. 40: 874-877. DOI: 10.1109/Led.2019.2894416  0.378
2019 Sarangapani P, Chu Y, Charles J, Klimeck G, Kubis T. Band-tail Formation and Band-gap Narrowing Driven by Polar Optical Phonons and Charged Impurities in Atomically Resolved III-V Semiconductors and Nanodevices Physical Review Applied. 12: 44045. DOI: 10.1103/Physrevapplied.12.044045  0.394
2019 Chu Y, Shi J, Miao K, Zhong Y, Sarangapani P, Fisher TS, Klimeck G, Ruan X, Kubis T. Thermal boundary resistance predictions with non-equilibrium Green's function and molecular dynamics simulations Applied Physics Letters. 115: 231601. DOI: 10.1063/1.5125037  0.343
2019 Boykin TB, Sarangapani P, Klimeck G. Non-orthogonal tight-binding models: Problems and possible remedies for realistic nano-scale devices Journal of Applied Physics. 125: 144302-144302. DOI: 10.1063/1.5056178  0.337
2018 Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano. PMID 30563322 DOI: 10.1021/Acsnano.8B06441  0.702
2018 Ameen TA, Ilatikhameneh H, Tankasala A, Hsueh Y, Charles J, Fonseca J, Povolotskyi M, Kim JO, Krishna S, Allen MS, Allen JW, Rahman R, Klimeck G. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9: 1075-1084. PMID 29719758 DOI: 10.3762/Bjnano.9.99  0.676
2018 Sarangapani P, Weber C, Chang J, Cea S, Povolotskyi M, Klimeck G, Kubis T. Atomistic Tight-Binding Study of Contact Resistivity in Si/SiGe PMOS Schottky Contacts Ieee Transactions On Nanotechnology. 17: 968-973. DOI: 10.1109/Tnano.2018.2840836  0.423
2018 Ilatikhameneh H, Ameen T, Chen F, Sahasrabudhe H, Klimeck G, Rahman R. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications Ieee Transactions On Nanotechnology. 17: 293-298. DOI: 10.1109/Tnano.2018.2799960  0.629
2018 Chen C, Ameen TA, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs Ieee Transactions On Electron Devices. 65: 4614-4621. DOI: 10.1109/Ted.2018.2862408  0.653
2018 Chen F, Ilatikhameneh H, Tan Y, Klimeck G, Rahman R. Switching Mechanism and the Scalability of Vertical-TFETs Ieee Transactions On Electron Devices. 65: 3065-3068. DOI: 10.1109/Ted.2018.2831688  0.649
2018 Ilatikhameneh H, Ameen TA, Chen C, Klimeck G, Rahman R. Sensitivity Challenge of Steep Transistors Ieee Transactions On Electron Devices. 65: 1633-1639. DOI: 10.1109/Ted.2018.2808040  0.665
2018 Ferdous R, Chan KW, Veldhorst M, Hwang JCC, Yang CH, Sahasrabudhe H, Klimeck G, Morello A, Dzurak AS, Rahman R. Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability Physical Review B. 97. DOI: 10.1103/Physrevb.97.241401  0.67
2018 Tankasala A, Salfi J, Bocquel J, Voisin B, Usman M, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S, Rahman R. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97. DOI: 10.1103/Physrevb.97.195301  0.711
2018 Sahasrabudhe H, Novakovic B, Nakamura J, Fallahi S, Povolotskyi M, Klimeck G, Rahman R, Manfra MJ. Optimization of edge state velocity in the integer quantum Hall regime Physical Review B. 97. DOI: 10.1103/Physrevb.97.085302  0.663
2018 Chu Y, Sarangapani P, Charles J, Klimeck G, Kubis T. Explicit screening full band quantum transport model for semiconductor nanodevices Journal of Applied Physics. 123: 244501. DOI: 10.1063/1.5031461  0.384
2018 Long P, Huang JZ, Povolotskyi M, Sarangapani P, Valencia-Zapata GA, Kubis T, Rodwell MJW, Klimeck G. Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors Journal of Applied Physics. 123: 174504. DOI: 10.1063/1.5018737  0.42
2018 Huang JZ, Ilatikhameneh H, Povolotskyi M, Klimeck G. Robust mode space approach for atomistic modeling of realistically large nanowire transistors Journal of Applied Physics. 123: 044303. DOI: 10.1063/1.5010238  0.435
2018 Geng J, Sarangapani P, Wang K, Nelson E, Browne B, Wordelman C, Charles J, Chu Y, Kubis T, Klimeck G. Quantitative Multi-Scale, Multi-Physics Quantum Transport Modeling of GaN-Based Light Emitting Diodes Physica Status Solidi (a). 215: 1700662. DOI: 10.1002/Pssa.201700662  0.377
2017 Tosi G, Mohiyaddin FA, Schmitt V, Tenberg S, Rahman R, Klimeck G, Morello A. Silicon quantum processor with robust long-distance qubit couplings. Nature Communications. 8: 450. PMID 28878207 DOI: 10.1038/S41467-017-00378-X  0.679
2017 Sengupta P, Tan Y, Klimeck G, Shi J. Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 29: 405701. PMID 28862996 DOI: 10.1088/1361-648X/Aa8087  0.328
2017 Geng J, Sarangapani P, Nelson E, Browne B, Wordelman C, Kubis T, Klimeck G. NEMO5: realistic and efficient NEGF simulations of GaN light-emitting diodes Proceedings of Spie. 10098: 1009813. DOI: 10.1117/12.2256236  0.455
2017 Huang JZ, Long P, Povolotskyi M, Ilatikhameneh H, Ameen TA, Rahman R, Rodwell MJW, Klimeck G. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs Ieee Transactions On Electron Devices. 64: 2728-2735. DOI: 10.1109/Ted.2017.2690669  0.659
2017 Ameen TA, Ilatikhameneh H, Huang JZ, Povolotskyi M, Rahman R, Klimeck G. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions Ieee Transactions On Electron Devices. 64: 2512-2518. DOI: 10.1109/Ted.2017.2690626  0.691
2017 Huang JZ, Long P, Povolotskyi M, Klimeck G, Rodwell MJW. Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness Ieee Transactions On Electron Devices. 64: 96-101. DOI: 10.1109/Ted.2016.2624744  0.399
2017 Chen FW, Ilatikhameneh H, Ameen TA, Klimeck G, Rahman R. Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene Ieee Electron Device Letters. 38: 130-133. DOI: 10.1109/Led.2016.2627538  0.688
2017 Chen F, Ilatikhameneh H, Tan Y, Valencia D, Klimeck G, Rahman R. Transport in vertically stacked hetero-structures from 2D materials Journal of Physics: Conference Series. 864: 012053. DOI: 10.1088/1742-6596/864/1/012053  0.689
2017 Boykin TB, Klimeck G. Insights from simple models for surface states in nanostructures European Journal of Physics. 38: 025501. DOI: 10.1088/1361-6404/Aa57Ca  0.356
2017 Wang K, Stanev TK, Valencia D, Charles J, Henning A, Sangwan VK, Lahiri A, Mejia D, Sarangapani P, Povolotskyi M, Afzalian A, Maassen J, Klimeck G, Hersam MC, Lauhon LJ, et al. Control of interlayer physics in 2H transition metal dichalcogenides Journal of Applied Physics. 122: 224302. DOI: 10.1063/1.5005958  0.401
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 38120. PMID 27901074 DOI: 10.1038/Srep38120  0.643
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 31830. PMID 27550779 DOI: 10.1038/Srep31830  0.672
2016 Ilatikhameneh H, Ameen T, Novakovic B, Tan Y, Klimeck G, Rahman R. Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass. Scientific Reports. 6: 31501. PMID 27538849 DOI: 10.1038/Srep31501  0.665
2016 Ameen TA, Ilatikhameneh H, Klimeck G, Rahman R. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors. Scientific Reports. 6: 28515. PMID 27345020 DOI: 10.1038/Srep28515  0.679
2016 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Communications. 7: 11342. PMID 27094205 DOI: 10.1038/Ncomms11342  0.674
2016 Salmani-Jelodar M, Ilatikhameneh H, Kim S, Ng K, Sarangapani P, Klimeck G. Optimum High-k Oxide for the Best Performance of Ultra-Scaled Double-Gate MOSFETs Ieee Transactions On Nanotechnology. 15: 904-910. DOI: 10.1109/Tnano.2016.2583411  0.356
2016 Ilatikhameneh H, Salazar RB, Klimeck G, Rahman R, Appenzeller J. From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling Ieee Transactions On Electron Devices. 63: 2871-2878. DOI: 10.1109/Ted.2016.2565582  0.685
2016 He Y, Tan Y, Jiang Z, Povolotskyi M, Klimeck G, Kubis T. Surface Passivation in Empirical Tight Binding Ieee Transactions On Electron Devices. 63: 954-958. DOI: 10.1109/Ted.2016.2519042  0.37
2016 Salmani Jelodar M, Ilatikhameneh H, Sarangapani P, Mehrotra SR, Klimeck G, Kim S, Ng K. Tunneling: The major issue in ultra-scaled MOSFETs Ieee-Nano 2015 - 15th International Conference On Nanotechnology. 670-673. DOI: 10.1109/NANO.2015.7388694  0.775
2016 Long P, Huang JZ, Povolotskyi M, Klimeck G, Rodwell MJW. High-current tunneling FETs with (1-10) orientation and a channel heterojunction Ieee Electron Device Letters. 37: 345-348. DOI: 10.1109/Led.2016.2523269  0.408
2016 Ilatikhameneh H, Klimeck G, Rahman R. Can Homojunction Tunnel FETs Scale Below 10 nm? Ieee Electron Device Letters. 37: 115-118. DOI: 10.1109/Led.2015.2501820  0.607
2016 Long P, Wilson E, Huang JZ, Klimeck G, Rodwell MJW, Povolotskyi M. Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs Ieee Electron Device Letters. 37: 107-110. DOI: 10.1109/Led.2015.2497666  0.361
2016 Ilatikhameneh H, Ameen TA, Klimeck G, Rahman R. Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots Ieee Journal of Quantum Electronics. 52: 1-8. DOI: 10.1109/Jqe.2016.2573959  0.654
2016 Huang JZ, Long P, Povolotskyi M, Klimeck G, Rodwell MJW. P-Type Tunnel FETs With Triple Heterojunctions Ieee Journal of the Electron Devices Society. 4: 410-415. DOI: 10.1109/Jeds.2016.2614915  0.358
2016 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Design rules for high performance tunnel transistors from 2-D materials Ieee Journal of the Electron Devices Society. 4: 260-265. DOI: 10.1109/Jeds.2016.2568219  0.681
2016 Chen FW, Ilatikhameneh H, Klimeck G, Chen Z, Rahman R. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET Ieee Journal of the Electron Devices Society. 4: 124-128. DOI: 10.1109/Jeds.2016.2539919  0.664
2016 Mohiyaddin FA, Kalra R, Laucht A, Rahman R, Klimeck G, Morello A. Transport of spin qubits with donor chains under realistic experimental conditions Physical Review B. 94. DOI: 10.1103/Physrevb.94.045314  0.654
2016 Tan Y, Povolotskyi M, Kubis T, Boykin TB, Klimeck G. Transferable tight-binding model for strained group IV and III-V materials and heterostructures Physical Review B. 94. DOI: 10.1103/Physrevb.94.045311  0.331
2016 Long P, Huang JZ, Jiang Z, Klimeck G, Rodwell MJW, Povolotskyi M. Performance degradation of superlattice MOSFETs due to scattering in the contacts Journal of Applied Physics. 120: 224501. DOI: 10.1063/1.4971341  0.427
2016 Miao K, Sadasivam S, Charles J, Klimeck G, Fisher TS, Kubis T. Büttiker probes for dissipative phonon quantum transport in semiconductor nanostructures Applied Physics Letters. 108. DOI: 10.1063/1.4944329  0.435
2016 Wang Y, Tankasala A, Hollenberg LCL, Klimeck G, Simmons MY, Rahman R. Highly tunable exchange in donor qubits in silicon Npj Quantum Information. 2. DOI: 10.1038/Npjqi.2016.8  0.693
2016 Charles J, Sarangapani P, Golizadeh-Mojarad R, Andrawis R, Lemus D, Guo X, Mejia D, Fonseca JE, Povolotskyi M, Kubis T, Klimeck G. Incoherent transport in NEMO5: realistic and efficient scattering on phonons Journal of Computational Electronics. 1-7. DOI: 10.1007/S10825-016-0845-Y  0.799
2015 Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Electrically controlling single-spin qubits in a continuous microwave field. Science Advances. 1: e1500022. PMID 26601166 DOI: 10.1126/Sciadv.1500022  0.668
2015 Chu T, Ilatikhameneh H, Klimeck G, Rahman R, Chen Z. Electrically Tunable Bandgaps in Bilayer MoS2. Nano Letters. PMID 26560813 DOI: 10.1021/Acs.Nanolett.5B03218  0.662
2015 Sengupta P, Klimeck G, Bellotti E. The evaluation of non-topological components in Berry phase and momentum relaxation time in a gapped 3D topological insulator. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 335505. PMID 26241517 DOI: 10.1088/0953-8984/27/33/335505  0.331
2015 Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207  0.687
2015 Ryu H, Lee S, Fuechsle M, Miwa JA, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. A tight-binding study of single-atom transistors. Small (Weinheim An Der Bergstrasse, Germany). 11: 374-81. PMID 25293353 DOI: 10.1002/Smll.201400724  0.645
2015 Salmani-Jelodar M, Mehrotra SR, Ilatikhameneh H, Klimeck G. Design Guidelines for Sub-12 nm Nanowire MOSFETs Ieee Transactions On Nanotechnology. 14: 210-213. DOI: 10.1109/Tnano.2015.2395441  0.786
2015 Jiang Z, Lu Y, Tan Y, He Y, Povolotskyi M, Kubis T, Seabaugh AC, Fay P, Klimeck G. Quantum Transport in AlGaSb/InAs TFETs With Gate Field In-Line With Tunneling Direction Ieee Transactions On Electron Devices. 62: 2445-2449. DOI: 10.1109/Ted.2015.2443564  0.415
2015 Jiang Z, Behin-Aein B, Krivokapic Z, Povolotskyi M, Klimeck G. Tunneling and short channel effects in ultrascaled InGaAs double gate MOSFETs Ieee Transactions On Electron Devices. 62: 525-531. DOI: 10.1109/Ted.2014.2383392  0.785
2015 Tan YHM, Ryu H, Weber B, Lee S, Rahman R, Hollenberg LCL, Simmons MY, Klimeck G. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348589  0.744
2015 Weber B, Tan YHM, Mahapatra S, Watson TF, Ryu H, Lee S, Rahman R, Hollenberg LCL, Klimeck G, Simmons MY. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348550  0.741
2015 Ilatikhameneh H, Rahman R, Appenzeller J, Klimeck G. Electrically doped WTe2 tunnel transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 270-272. DOI: 10.1109/SISPAD.2015.7292311  0.661
2015 Chen FW, Ilatikhameneh H, Klimeck G, Rahman R, Chu T, Chen Z. Achieving a higher performance in bilayer graphene FET - Strain engineering International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 177-181. DOI: 10.1109/SISPAD.2015.7292288  0.614
2015 Novakovic B, Klimeck G. Atomistic quantum transport approach to time-resolved device simulations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 8-11. DOI: 10.1109/SISPAD.2015.7292245  0.324
2015 Ilatikhameneh H, Ameen TA, Klimeck G, Appenzeller J, Rahman R. Dielectric Engineered Tunnel Field-Effect Transistor Ieee Electron Device Letters. 36: 1097-1100. DOI: 10.1109/Led.2015.2474147  0.654
2015 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Scaling Theory of Electrically Doped 2D Transistors Ieee Electron Device Letters. 36: 726-728. DOI: 10.1109/Led.2015.2436356  0.662
2015 Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/Jxcdc.2015.2426433  0.66
2015 Ilatikhameneh H, Tan Y, Novakovic B, Klimeck G, Rahman R, Appenzeller J. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 12-18. DOI: 10.1109/Jxcdc.2015.2423096  0.702
2015 Sarangapani P, Mejia D, Charles J, Gilbertson W, Ilatikhameneh H, Ameen T, Roche A, Fonseca J, Klimeck G. Quantum dot lab: An online platform for quantum dot simulations 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301982  0.301
2015 Ameen TA, Ilatikhameneh H, Valencia D, Rahman R, Klimeck G. Engineering the optical transitions of self-assembled quantum dots 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301940  0.633
2015 Tan YP, Povolotskyi M, Kubis T, Boykin TB, Klimeck G. Tight-binding analysis of Si and GaAs ultrathin bodies with subatomic wave-function resolution Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.085301  0.372
2015 Usman M, Hill CD, Rahman R, Klimeck G, Simmons MY, Rogge S, Hollenberg LCL. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.245209  0.697
2015 Sengupta P, Klimeck G. The influence of proximity induced ferromagnetism, superconductivity and Fermi-velocity on evolution of Berry phase in Bi2Se3 topological insulator Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/4/045004  0.337
2015 Salazar RB, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations Journal of Applied Physics. 118. DOI: 10.1063/1.4934682  0.697
2015 Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Publisher's Note: “Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations” [J. Appl. Phys. 117, 174312 (2015)] Journal of Applied Physics. 118: 019901. DOI: 10.1063/1.4923312  0.749
2015 Mol JA, Salfi J, Rahman R, Hsueh Y, Miwa JA, Klimeck G, Simmons MY, Rogge S. Interface-induced heavy-hole/light-hole splitting of acceptors in silicon Applied Physics Letters. 106. DOI: 10.1063/1.4921640  0.657
2015 Vedula RP, Mehrotra S, Kubis T, Povolotskyi M, Klimeck G, Strachan A. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations Journal of Applied Physics. 117. DOI: 10.1063/1.4919091  0.781
2015 Sengupta P, Kubis T, Tan Y, Klimeck G. Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures Journal of Applied Physics. 117. DOI: 10.1063/1.4906842  0.328
2015 Sengupta P, Ryu H, Lee S, Tan Y, Klimeck G. Numerical guidelines for setting up a k.p simulator with applications to quantum dot heterostructures and topological insulators Journal of Computational Electronics. DOI: 10.1007/S10825-015-0729-6  0.603
2014 Weber B, Ryu H, Tan YH, Klimeck G, Simmons MY. Limits to metallic conduction in atomic-scale quasi-one-dimensional silicon wires. Physical Review Letters. 113: 246802. PMID 25541793 DOI: 10.1103/Physrevlett.113.246802  0.621
2014 Pla JJ, Mohiyaddin FA, Tan KY, Dehollain JP, Rahman R, Klimeck G, Jamieson DN, Dzurak AS, Morello A. Coherent control of a single ²⁹Si nuclear spin qubit. Physical Review Letters. 113: 246801. PMID 25541792 DOI: 10.1103/Physrevlett.113.246801  0.618
2014 Hsueh YL, Büch H, Tan Y, Wang Y, Hollenberg LC, Klimeck G, Simmons MY, Rahman R. Spin-lattice relaxation times of single donors and donor clusters in silicon. Physical Review Letters. 113: 246406. PMID 25541787 DOI: 10.1103/Physrevlett.113.246406  0.653
2014 Razavieh A, Mohseni PK, Jung K, Mehrotra S, Das S, Suslov S, Li X, Klimeck G, Janes DB, Appenzeller J. Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors. Acs Nano. 8: 6281-7. PMID 24848303 DOI: 10.1021/Nn5017567  0.789
2014 Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Nature Nanotechnology. 9: 430-5. PMID 24727686 DOI: 10.1038/Nnano.2014.63  0.727
2014 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Spatially resolving valley quantum interference of a donor in silicon. Nature Materials. 13: 605-10. PMID 24705384 DOI: 10.1038/Nmat3941  0.68
2014 Ameen T, Ilatikhameneh H, Charles J, Hsueh Y, Chen S, Fonseca J, Povolotskyi M, Rahman R, Klimeck G. Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 921-924. DOI: 10.1109/NANO.2014.6968137  0.594
2014 Kuroda MA, Jiang Z, Povolotskyi M, Klimeck G, Newns DM, Martyna GJ. Anisotropic strain in SmSe and SmTe: Implications for electronic transport Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.245124  0.368
2014 Boykin TB, Ajoy A, Ilatikhameneh H, Povolotskyi M, Klimeck G. Brillouin zone unfolding method for effective phonon spectra Physical Review B. 90. DOI: 10.1103/Physrevb.90.205214  0.343
2014 He Y, Wang Y, Klimeck G, Kubis T. Non-equilibrium Green's functions method: Non-trivial and disordered leads Applied Physics Letters. 105: 213502. DOI: 10.1063/1.4902504  0.384
2014 Salmani-Jelodar M, Kim S, Ng K, Klimeck G. Transistor roadmap projection using predictive full-band atomistic modeling Applied Physics Letters. 105: 083508. DOI: 10.1063/1.4894217  0.482
2014 Kim S, Luisier M, Boykin TB, Klimeck G. Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method Applied Physics Letters. 104: 243113. DOI: 10.1063/1.4884199  0.423
2014 Hegde G, Povolotskyi M, Kubis T, Charles J, Klimeck G. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. II. Application—Effect of quantum confinement and homogeneous strain on Cu conductance Journal of Applied Physics. 115: 123704. DOI: 10.1063/1.4868979  0.785
2014 Hegde G, Povolotskyi M, Kubis T, Boykin T, Klimeck G. An environment-dependent semi-empirical tight binding model suitable for electron transport in bulk metals, metal alloys, metallic interfaces, and metallic nanostructures. I. Model and validation Journal of Applied Physics. 115: 123703. DOI: 10.1063/1.4868977  0.781
2014 Rajamohanan B, Mohata DK, Zhu Y, Hudait MK, Jiang Z, Hollander M, Klimeck G, Datta S. Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors Journal of Applied Physics. 115: 44502. DOI: 10.1063/1.4862042  0.343
2013 Ryu H, Lee S, Weber B, Mahapatra S, Hollenberg LC, Simmons MY, Klimeck G. Atomistic modeling of metallic nanowires in silicon. Nanoscale. 5: 8666-74. PMID 23897026 DOI: 10.1039/C3Nr01796F  0.636
2013 Yang CH, Rossi A, Ruskov R, Lai NS, Mohiyaddin FA, Lee S, Tahan C, Klimeck G, Morello A, Dzurak AS. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Nature Communications. 4: 2069. PMID 23804134 DOI: 10.1038/Ncomms3069  0.399
2013 Mohiyaddin FA, Rahman R, Kalra R, Klimeck G, Hollenberg LC, Pla JJ, Dzurak AS, Morello A. Noninvasive spatial metrology of single-atom devices. Nano Letters. 13: 1903-9. PMID 23570240 DOI: 10.1021/Nl303863S  0.656
2013 Deutsch C, Detz H, Zederbauer T, Andrews AM, Klang P, Kubis T, Klimeck G, Schuster ME, Schrenk W, Strasser G, Unterrainer K. Probing scattering mechanisms with symmetric quantum cascade lasers. Optics Express. 21: 7209-15. PMID 23546105 DOI: 10.1364/Oe.21.007209  0.398
2013 Razavieh A, Mehrotra S, Singh N, Klimeck G, Janes D, Appenzeller J. Utilizing the unique properties of nanowire MOSFETs for RF applications. Nano Letters. 13: 1549-54. PMID 23464859 DOI: 10.1021/Nl3047078  0.784
2013 Mehrotra SR, Kim S, Kubis T, Povolotskyi M, Lundstrom MS, Klimeck G. Engineering nanowire n-MOSFETs at Lg<8 nm Ieee Transactions On Electron Devices. 60: 2171-2177. DOI: 10.1109/Ted.2013.2263806  0.801
2013 Ryu H, Lee S, Weber B, Mahapatra S, Simmons MY, Hollenberg LCL, Klimeck G. A tight-binding study of channel modulation in atomic-scale Si:P nanowires International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 77-80. DOI: 10.1109/SISPAD.2013.6650578  0.522
2013 Mehrotra SR, Povolotskyi M, Elias DC, Kubis T, Law JJM, Rodwell MJW, Klimeck G. Simulation study of thin-body ballistic n-MOSFETs involving transport in mixed Γ-L valleys Ieee Electron Device Letters. 34: 1196-1198. DOI: 10.1109/Led.2013.2273072  0.791
2013 Park SH, Kharche N, Basu D, Jiang Z, Nayak SK, Weber CE, Hegde G, Haume K, Kubis T, Povolotskyi M, Klimeck G. Scaling effect on specific contact resistivity in nano-scale metal-semiconductor contacts Device Research Conference - Conference Digest, Drc. 125-126. DOI: 10.1109/DRC.2013.6633825  0.625
2013 Zwanenburg FA, Dzurak AS, Morello A, Simmons MY, Hollenberg LCL, Klimeck G, Rogge S, Coppersmith SN, Eriksson MA. Silicon quantum electronics Reviews of Modern Physics. 85: 961-1019. DOI: 10.1103/Revmodphys.85.961  0.418
2013 Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)] Physical Review Letters. 110. DOI: 10.1103/Physrevlett.110.049901  0.619
2013 Jiang X, Kharche N, Kohl P, Boykin TB, Klimeck G, Luisier M, Ajayan PM, Nayak SK. Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces Applied Physics Letters. 103: 133107. DOI: 10.1063/1.4822427  0.674
2013 Sengupta P, Kubis T, Tan Y, Povolotskyi M, Klimeck G. Design principles for HgTe based topological insulator devices Journal of Applied Physics. 114: 043702. DOI: 10.1063/1.4813877  0.428
2013 Luisier M, Boykin TB, Ye Z, Martini A, Klimeck G, Kharche N, Jiang X, Nayak S. Investigation of ripple-limited low-field mobility in large-scale graphene nanoribbons Applied Physics Letters. 102: 253506. DOI: 10.1063/1.4811761  0.687
2013 Zeng L, He Y, Povolotskyi M, Liu X, Klimeck G, Kubis T. Low rank approximation method for efficient Green's function calculation of dissipative quantum transport Journal of Applied Physics. 113: 213707. DOI: 10.1063/1.4809638  0.347
2013 Jiang Z, Kuroda MA, Tan Y, Newns DM, Povolotskyi M, Boykin TB, Kubis T, Klimeck G, Martyna GJ. Electron transport in nano-scaled piezoelectronic devices Applied Physics Letters. 102. DOI: 10.1063/1.4804601  0.41
2013 Ryu H, Nam D, Ahn B, Ruth Lee J, Cho K, Lee S, Klimeck G, Shin M. Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors Mathematical and Computer Modelling. 58: 288-299. DOI: 10.1016/J.Mcm.2012.11.024  0.631
2013 Fonseca JE, Kubis T, Povolotskyi M, Novakovic B, Ajoy A, Hegde G, Ilatikhameneh H, Jiang Z, Sengupta P, Tan Y, Klimeck G. Efficient and realistic device modeling from atomic detail to the nanoscale Journal of Computational Electronics. 12: 592-600. DOI: 10.1007/S10825-013-0509-0  0.803
2013 Tan Y, Povolotskyi M, Kubis T, He Y, Jiang Z, Klimeck G, Boykin TB. Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping Journal of Computational Electronics. 12: 56-60. DOI: 10.1007/S10825-013-0436-0  0.313
2013 Mehrotra S, Long P, Povolotskyi M, Klimeck G. Atomistic simulation of phonon and alloy limited hole mobility in Si1-xGexnanowires Physica Status Solidi (Rrl) - Rapid Research Letters. 7: 903-906. DOI: 10.1002/Pssr.201307124  0.762
2012 Fujita K, Yamanishi M, Furuta S, Tanaka K, Edamura T, Kubis T, Klimeck G. Indirectly pumped 3.7 THz InGaAs/InAlAs quantum-cascade lasers grown by metal-organic vapor-phase epitaxy. Optics Express. 20: 20647-58. PMID 23037112 DOI: 10.1364/Oe.20.020647  0.335
2012 Salazar RB, Mehrotra SR, Klimeck G, Singh N, Appenzeller J. Observation of 1D behavior in Si nanowires: toward high-performance TFETs. Nano Letters. 12: 5571-5. PMID 23030672 DOI: 10.1021/Nl3025664  0.787
2012 Usman M, Tasco V, Todaro MT, De Giorgi M, O'Reilly EP, Klimeck G, Passaseo A. The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties. Nanotechnology. 23: 165202. PMID 22469563 DOI: 10.1088/0957-4484/23/16/165202  0.508
2012 Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LC, Klimeck G, Simmons MY. A single-atom transistor. Nature Nanotechnology. 7: 242-6. PMID 22343383 DOI: 10.1038/Nnano.2012.21  0.615
2012 Weber B, Mahapatra S, Ryu H, Lee S, Fuhrer A, Reusch TC, Thompson DL, Lee WC, Klimeck G, Hollenberg LC, Simmons MY. Ohm's law survives to the atomic scale. Science (New York, N.Y.). 335: 64-7. PMID 22223802 DOI: 10.1126/Science.1214319  0.597
2012 Fuechsle M, Miwa JA, Mahapatra S, Ryu H, Lee S, Warschkow O, Hollenberg LCL, Klimeck G, Simmons MY. Spectroscopy of a Deterministic Single-Donor Device in Silicon Proceedings of Spie. 8400: 840006. DOI: 10.1117/12.919763  0.63
2012 Sylvia SS, Park H, Khayer MA, Alam K, Klimeck G, Lake RK. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069. DOI: 10.1109/Ted.2012.2200688  0.637
2012 Park SH, Liu Y, Kharche N, Salmani Jelodar M, Klimeck G, Lundstrom MS, Luisier M. Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm) Ieee Transactions On Electron Devices. 59: 2107-2114. DOI: 10.1109/Ted.2012.2198481  0.736
2012 Mehrotra S, Povolotskyi M, Law J, Kubis T, Klimeck G, Rodwell M. Design of high-current L-valley GaAs=AlAs0.56Sb 0.44/InP (111) ultra-thin-body nMOSFETs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 151-154. DOI: 10.1109/ICIPRM.2012.6403344  0.774
2012 Kotlyar R, Linton TD, Rios R, Giles MD, Cea SM, Kuhn KJ, Povolotskyi M, Kubis T, Klimeck G. Does the low hole transport mass in 〈110〉 and 〈111〉 Si nanowires lead to mobility enhancements at high field and stress: A self-consistent tight-binding study Journal of Applied Physics. 111. DOI: 10.1063/1.4729806  0.373
2012 Ryu H, Park H, Shin M, Vasileska D, Klimeck G. Feasibility, accuracy, and performance of contact block reduction method for multi-band simulations of ballistic quantum transport Journal of Applied Physics. 111: 063705. DOI: 10.1063/1.3694740  0.598
2012 Jiang Z, Kharche N, Boykin T, Klimeck G. Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells Applied Physics Letters. 100: 103502. DOI: 10.1063/1.3692174  0.73
2012 Cho WS, Luisier M, Mohata D, Datta S, Pawlik D, Rommel SL, Klimeck G. Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing Applied Physics Letters. 100. DOI: 10.1063/1.3682506  0.393
2012 Cauley S, Balakrishnan V, Klimeck G, Koh CK. A two-dimensional domain decomposition technique for the simulation of quantum-scale devices Journal of Computational Physics. 231: 1293-1313. DOI: 10.1016/J.Jcp.2011.10.006  0.397
2012 Salmani-Jelodar M, Paul A, Boykin T, Klimeck G. Calculation of phonon spectrum and thermal properties in suspended 〈100〉 In X Ga1−X As nanowires Journal of Computational Electronics. 11: 22-28. DOI: 10.1007/S10825-012-0389-8  0.614
2012 Paul A, Salamat S, Jeong C, Klimeck G, Lundstrom M. An efficient algorithm to calculate intrinsic thermoelectric parameters based on Landauer approach Journal of Computational Electronics. 11: 56-66. DOI: 10.1007/S10825-011-0379-2  0.304
2011 Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LC, Rogge S. Lifetime-enhanced transport in silicon due to spin and valley blockade. Physical Review Letters. 107: 136602. PMID 22026881 DOI: 10.1103/Physrevlett.107.136602  0.698
2011 Usman M, Tan YH, Ryu H, Ahmed SS, Krenner HJ, Boykin TB, Klimeck G. Quantitative excited state spectroscopy of a single InGaAs quantum dot molecule through multi-million-atom electronic structure calculations. Nanotechnology. 22: 315709. PMID 21737873 DOI: 10.1088/0957-4484/22/31/315709  0.684
2011 Rahman R, Park SH, Klimeck G, Hollenberg LC. Stark tuning of the charge states of a two-donor molecule in silicon. Nanotechnology. 22: 225202. PMID 21454928 DOI: 10.1088/0957-4484/22/22/225202  0.674
2011 Paul A, Miao K, Luisier M, Klimeck G. Tuning Lattice Thermal Conductance in Ultra-Scaled Hollow SiNW: Role of Porosity Size, Density and Distribution Mrs Proceedings. 1329. DOI: 10.1557/Opl.20O11.1464  0.601
2011 Jeong C, Klimeck G, Lundstrom M. Computational study of the electronic performance of cross-plane superlattice Peltier devices Materials Research Society Symposium Proceedings. 1314: 13-18. DOI: 10.1557/Opl.2011.509  0.379
2011 Sengupta P, Lee S, Steiger S, Ryu H, Klimeck G. Multiscale Modeling of a Quantum Dot Heterostructure Mrs Proceedings. 1370. DOI: 10.1557/Opl.2011.1055  0.633
2011 Steiger S, Povolotskyi M, Park H, Kubis T, Klimeck G. NEMO5: A Parallel Multiscale Nanoelectronics Modeling Tool Ieee Transactions On Nanotechnology. 10: 1464-1474. DOI: 10.1109/Tnano.2011.2166164  0.466
2011 Kharche N, Klimeck G, Kim D, del Alamo JA, Luisier M. Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs Ieee Transactions On Electron Devices. 58: 1963-1971. DOI: 10.1109/Ted.2011.2144986  0.746
2011 Kim S, Luisier M, Paul A, Boykin TB, Klimeck G. Full Three-Dimensional Quantum Transport Simulation of Atomistic Interface Roughness in Silicon Nanowire FETs Ieee Transactions On Electron Devices. 58: 1371-1380. DOI: 10.1109/Ted.2011.2118213  0.669
2011 Tettamanzi GC, Paul A, Lee S, Mehrotra SR, Collaert N, Biesemans S, Klimeck G, Rogge S. Interface Trap Density Metrology of State-of-the-Art Undoped Si n-FinFETs Ieee Electron Device Letters. 32: 440-442. DOI: 10.1109/Led.2011.2106150  0.772
2011 Deora S, Paul A, Bijesh R, Huang J, Klimeck G, Bersuker G, Krisch PD, Jammy R. Intrinsic reliability improvement in biaxially strained SiGe p-MOSFETs Ieee Electron Device Letters. 32: 255-257. DOI: 10.1109/Led.2010.2099101  0.373
2011 Paul A, Mehrotra S, Klimeck G, Rodwell M. Performance enhancement of GaAs UTB pFETs by strain, orientation and body thickness engineering Device Research Conference - Conference Digest, Drc. 233-234. DOI: 10.1109/DRC.2011.5994511  0.749
2011 Steiger S, Povolotskyi M, Park HH, Kubis T, Hegde G, Haley B, Rodwell M, Klimeck G. The nanoelectronic modeling tool NEMO 5: Capabilities, validation, and application to Sb-heterostructures Device Research Conference - Conference Digest, Drc. 23-26. DOI: 10.1109/DRC.2011.5994404  0.34
2011 Lee S, Ryu H, Campbell H, Hollenberg LCL, Simmons MY, Klimeck G. Electronic structure of realistically extended atomistically resolved disordered Si:Pδ-doped layers Physical Review B. 84. DOI: 10.1103/Physrevb.84.205309  0.562
2011 Steiger S, Salmani-Jelodar M, Areshkin D, Paul A, Kubis T, Povolotskyi M, Park H, Klimeck G. Enhanced valence force field model for the lattice properties of gallium arsenide Physical Review B. 84. DOI: 10.1103/Physrevb.84.155204  0.574
2011 Rahman R, Lansbergen GP, Verduijn J, Tettamanzi GC, Park SH, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Electric Field Reduced Charging Energies and Two-Electron Bound Excited States of Single Donors in Silicon Physical Review B. 84. DOI: 10.1103/Physrevb.84.115428  0.657
2011 Usman M, Inoue T, Harda Y, Klimeck G, Kita T. Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks Physical Review B. 84. DOI: 10.1103/Physrevb.84.115321  0.518
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)] Physical Review B. 83. DOI: 10.1103/Physrevb.83.239904  0.779
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon Physical Review B. 83. DOI: 10.1103/Physrevb.83.195323  0.816
2011 Prada M, Klimeck G, Joynt R. Spin–orbit splittings in Si/SiGe quantum wells: from ideal Si membranes to realistic heterostructures New Journal of Physics. 13: 013009. DOI: 10.1088/1367-2630/13/1/013009  0.425
2011 Kim SG, Luisier M, Boykin TB, Klimeck G. Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors Applied Physics Letters. 99: 232107. DOI: 10.1063/1.3665939  0.389
2011 Paul A, Luisier M, Klimeck G. Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires Journal of Applied Physics. 110: 114309. DOI: 10.1063/1.3662177  0.605
2011 Paul A, Tettamanzi GC, Lee S, Mehrotra SR, Collaert N, Biesemans S, Rogge S, Klimeck G. Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs Journal of Applied Physics. 110: 124507. DOI: 10.1063/1.3660697  0.778
2011 Paul A, Luisier M, Klimeck G. Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires Journal of Applied Physics. 110: 094308. DOI: 10.1063/1.3656687  0.589
2011 Paul A, Klimeck G. Strain effects on the phonon thermal properties of ultra-scaled Si nanowires Applied Physics Letters. 99: 083115. DOI: 10.1063/1.3630228  0.606
2011 Hegde G, Klimeck G, Strachan A. Role of surface orientation on atomic layer deposited Al2O3/GaAs interface structure and Fermi level pinning: A density functional theory study Applied Physics Letters. 99: 093508. DOI: 10.1063/1.3624897  0.783
2011 Cauley S, Luisier M, Balakrishnan V, Klimeck G, Koh CK. Distributed non-equilibrium Green's function algorithms for the simulation of nanoelectronic devices with scattering Journal of Applied Physics. 110. DOI: 10.1063/1.3624612  0.345
2011 Paul A, Klimeck G. Atomistic study of electronic structure of PbSe nanowires Applied Physics Letters. 98: 212105. DOI: 10.1063/1.3592577  0.647
2011 Usman M, Heck S, Clarke E, Spencer P, Ryu H, Murray R, Klimeck G. Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm) Journal of Applied Physics. 109: 104510. DOI: 10.1063/1.3587167  0.637
2011 Mehrotra SR, Paul A, Klimeck G. Atomistic approach to alloy scattering in Si1−xGex Applied Physics Letters. 98: 173503. DOI: 10.1063/1.3583983  0.778
2011 Boykin TB, Luisier M, Klimeck G, Jiang X, Kharche N, Zhou Y, Nayak SK. Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons Journal of Applied Physics. 109: 104304. DOI: 10.1063/1.3582136  0.681
2011 Paul A, Klimeck G. Tuning lattice thermal conductance by porosity control in ultrascaled Si and Ge nanowires Applied Physics Letters. 98: 083106. DOI: 10.1063/1.3556648  0.629
2011 Neophytou N, Klimeck G, Kosina H. Subband engineering for p-type silicon ultra-thin layers for increased carrier velocities: An atomistic analysis Journal of Applied Physics. 109. DOI: 10.1063/1.3556435  0.371
2010 Shin M, Lee S, Klimeck G. Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method Ieee Transactions On Electron Devices. 57: 2274-2283. DOI: 10.1109/Ted.2010.2052400  0.437
2010 Strachan A, Klimeck G, Lundstrom M. Cyber-Enabled Simulations in Nanoscale Science and Engineering Computing in Science & Engineering. 12: 12-17. DOI: 10.1109/Mcse.2010.38  0.313
2010 Klimeck G, Luisier M. Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN Computing in Science and Engineering. 12: 28-35. DOI: 10.1109/Mcse.2010.32  0.404
2010 Agarwal S, Klimeck G, Luisier M. Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors Ieee Electron Device Letters. 31: 621-623. DOI: 10.1109/Led.2010.2046011  0.426
2010 Paul A, Mehrotra S, Luisier M, Klimeck G. Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs Ieee Electron Device Letters. 31: 278-280. DOI: 10.1109/Led.2010.2040577  0.823
2010 Tettamanzi GC, Paul A, Lansbergen GP, Verduijn J, Lee S, Collaert N, Biesemans S, Klimeck G, Rogge S. Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs Ieee Electron Device Letters. 31: 150-152. DOI: 10.1109/Led.2009.2036134  0.373
2010 Rahman R, Muller RP, Levy JE, Carroll MS, Klimeck G, Greentree AD, Hollenberg LCL. Coherent electron transport by adiabatic passage in an imperfect donor chain Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155315  0.7
2010 Park H, Klimeck G. Quantum approach to electronic noise calculations in the presence of electron-phonon interactions Physical Review B. 82. DOI: 10.1103/Physrevb.82.125328  0.337
2010 Boykin TB, Luisier M, Salmani-Jelodar M, Klimeck G. Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization Physical Review B. 81. DOI: 10.1103/Physrevb.81.125202  0.35
2010 Kubis T, Mehrotra SR, Klimeck G. Design concepts of terahertz quantum cascade lasers: Proposal for terahertz laser efficiency improvements Applied Physics Letters. 97: 261106. DOI: 10.1063/1.3524197  0.766
2010 Luisier M, Klimeck G. Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling Journal of Applied Physics. 107: 084507. DOI: 10.1063/1.3386521  0.403
2010 Neophytou N, Kim SG, Klimeck G, Kosina H. On the bandstructure velocity and ballistic current of ultra-narrow silicon nanowire transistors as a function of cross section size, orientation, and bias Journal of Applied Physics. 107. DOI: 10.1063/1.3372764  0.392
2010 Tettamanzi GC, Lansbergen GP, Paul A, Lee S, Deosarran PA, Collaert N, Klimeck G, Biesemans S, Rogge S. Sub-threshold study of undoped trigate nFinFET Thin Solid Films. 518: 2521-2523. DOI: 10.1016/J.Tsf.2009.10.114  0.63
2010 Paul A, Luisier M, Klimeck G. Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires Journal of Computational Electronics. 9: 160-172. DOI: 10.1007/S10825-010-0332-9  0.647
2009 Park SH, Rahman R, Klimeck G, Hollenberg LC. Mapping donor electron wave function deformations at a sub-Bohr orbit resolution. Physical Review Letters. 103: 106802. PMID 19792334 DOI: 10.1103/Physrevlett.103.106802  0.637
2009 Neophytou N, Klimeck G. Design space for low sensitivity to size variations in [110] PMOS nanowire devices: the implications of anisotropy in the quantization mass. Nano Letters. 9: 623-30. PMID 19140767 DOI: 10.1021/Nl802893M  0.378
2009 Agarwal S, Montgomery KH, Boykin TB, Klimeck G, Woodall JM. Design guidelines for true green LEDs and high efficiency photovoltaics using ZnSe/GaAs digital alloys Electrochemical and Solid-State Letters. 13. DOI: 10.1149/1.3250436  0.336
2009 Usman M, Ryu H, Woo I, Ebert DS, Klimeck G. Moving toward nano-TCAD through multimillion-atom quantum-dot simulations matching experimental data Ieee Transactions On Nanotechnology. 8: 330-344. DOI: 10.1109/Tnano.2008.2011900  0.685
2009 Neophytou N, Kosina H, Selberherr S, Klimeck G. Dependence of injection velocity and capacitance of Si nanowires on diameter, orientation, and gate bias: An atomistic tight-binding study International Conference On Simulation of Semiconductor Processes and Devices, Sispad. DOI: 10.1109/SISPAD.2009.5290245  0.323
2009 Luisier M, Klimeck G. Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors Ieee Electron Device Letters. 30: 602-604. DOI: 10.1109/Led.2009.2020442  0.428
2009 Zhao H, Kim R, Paul A, Luisier M, Klimeck G, Ma F, Rustagi SC, Samudra GS, Singh N, Lo G, Kwong D. Characterization and Modeling of Subfemtofarad Nanowire Capacitance Using the CBCM Technique Ieee Electron Device Letters. 30: 526-528. DOI: 10.1109/Led.2009.2015588  0.371
2009 Rahman R, Lansbergen GP, Park SH, Verduijn J, Klimeck G, Rogge S, Hollenberg LCL. Orbital Stark effect and quantum confinement transition of donors in silicon Physical Review B. 80. DOI: 10.1103/Physrevb.80.165314  0.7
2009 Luisier M, Klimeck G. Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering Physical Review B. 80. DOI: 10.1103/Physrevb.80.155430  0.464
2009 Rahman R, Park SH, Boykin TB, Klimeck G, Rogge S, Hollenberg LCL. Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors Physical Review B. 80. DOI: 10.1103/Physrevb.80.155301  0.662
2009 Rahman R, Park SH, Cole JH, Greentree AD, Muller RP, Klimeck G, Hollenberg LCL. Atomistic simulations of adiabatic coherent electron transport in triple donor systems Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035302  0.69
2009 Haley BP, Lee S, Luisier M, Ryu H, Saied F, Clark S, Bae H, Klimeck G. Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB Journal of Physics: Conference Series. 180: 012075. DOI: 10.1088/1742-6596/180/1/012075  0.513
2009 Usman M, Vasileska D, Klimeck G. Strain-engineered self-organized InAs/GaAs quantum dots for long wavelength (1.3 μm-1.5 μm) optical applications Aip Conference Proceedings. 1199: 527-528. DOI: 10.1063/1.3295541  0.436
2009 Luisier M, Klimeck G. Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness Applied Physics Letters. 94: 223505. DOI: 10.1063/1.3140505  0.385
2009 Kharche N, Kim S, Boykin TB, Klimeck G. Valley degeneracies in (111) silicon quantum wells Applied Physics Letters. 94: 042101. DOI: 10.1063/1.3068499  0.71
2009 Boykin TB, Kharche N, Klimeck G. Non-primitive rectangular cells for tight-binding electronic structure calculations Physica E: Low-Dimensional Systems and Nanostructures. 41: 490-494. DOI: 10.1016/J.Physe.2008.09.022  0.673
2009 Haley BP, Klimeck G, Luisier M, Vasileska D, Paul A, Shivarajapura S, Beaudoin DL. Computational nanoelectronics research and education at nanoHUB.org Journal of Computational Electronics. 8: 124-131. DOI: 10.1007/S10825-009-0273-3  0.569
2008 Lansbergen GP, Rahman R, Wellard CJ, Caro J, Woo I, Colleart N, Biesemans S, Klimeck G, Hollenberg L, Rogge S. Level Spectrum of a Single Gated Arsenic Donor in a Three Terminal Geometry Mrs Proceedings. 1117. DOI: 10.1557/Proc-1117-J01-03  0.69
2008 Lansbergen G, Rahman R, Wellard C, Caro J, Collaert N, Biesemans S, Klimeck G, Hollenberg L, Rogge S. Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET Mrs Proceedings. 1067. DOI: 10.1557/Proc-1067-B03-07  0.682
2008 Kim R, Neophytou N, Paul A, Klimeck G, Lundstrom MS. Dimensionality in metal-oxide-semiconductor field-effect transistors: A comparison of one-dimensional and two-dimensional ballistic transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1628-1631. DOI: 10.1116/1.2908442  0.638
2008 Neophytou N, Paul A, Klimeck G. Bandstructure effects in silicon nanowire hole transport Ieee Transactions On Nanotechnology. 7: 710-719. DOI: 10.1109/Tnano.2008.2006272  0.661
2008 Neophytou N, Paul A, Lundstrom MS, Klimeck G. Bandstructure effects in silicon nanowire electron transport Ieee Transactions On Electron Devices. 55: 1286-1297. DOI: 10.1109/Ted.2008.920233  0.642
2008 Liu Y, Neophytou N, Klimeck G, Lundstrom MS. Band-structure effects on the performance of III-V ultrathin-body SOI MOSFETs Ieee Transactions On Electron Devices. 55: 1116-1122. DOI: 10.1109/Ted.2008.919290  0.405
2008 Liu Y, Neophytou N, Low T, Klimeck G, Lundstrom MS. A tight-binding study of the ballistic injection velocity for ultrathin-body SOI MOSFETs Ieee Transactions On Electron Devices. 55: 866-871. DOI: 10.1109/Ted.2007.915056  0.366
2008 Luisier M, Neophytou N, Kharche N, Klimeck G. Full-band and atomistic simulation of realistic 40 nm InAs HEMT Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796842  0.692
2008 Ryu H, Klimeck G. Contact block reduction method for ballistic quantum transport with semi-empirical sp3d5 tight binding band models International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 349-352. DOI: 10.1109/ICSICT.2008.4734543  0.587
2008 Palaria A, Klimeck G, Strachan A. Structures and energetics of silicon nanotubes from molecular dynamics and density functional theory Physical Review B. 78. DOI: 10.1103/Physrevb.78.205315  0.787
2008 Boykin TB, Kharche N, Klimeck G. Valley splitting in finite barrier quantum wells Physical Review B. 77. DOI: 10.1103/Physrevb.77.245320  0.732
2008 Lansbergen GP, Rahman R, Caro J, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Transport spectroscopy of a single atom in a FinFET Journal of Physics: Conference Series. 109: 012003. DOI: 10.1088/1742-6596/109/1/012003  0.577
2008 Srinivasan S, Klimeck G, Rokhinson LP. Valley splitting in Si quantum dots embedded in SiGe Applied Physics Letters. 93: 112102. DOI: 10.1063/1.2981577  0.643
2008 Lansbergen GP, Rahman R, Wellard CJ, Woo I, Caro J, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET Nature Physics. 4: 656-661. DOI: 10.1038/Nphys994  0.682
2008 Korkusinski M, Hawrylak P, Zielinski M, Sheng W, Klimeck G. Building semiconductor nanostructures atom by atom Microelectronics Journal. 39: 318-326. DOI: 10.1016/J.Mejo.2007.07.016  0.385
2008 Li S, Ahmed S, Klimeck G, Darve E. Computing entries of the inverse of a sparse matrix using the FIND algorithm Journal of Computational Physics. 227: 9408-9427. DOI: 10.1016/J.Jcp.2008.06.033  0.303
2008 Naumov M, Lee S, Haley B, Bae H, Clark S, Rahman R, Ryu H, Saied F, Klimeck G. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D Journal of Computational Electronics. 7: 297-300. DOI: 10.1007/S10825-008-0223-5  0.718
2008 Muralidharan B, Ryu H, Huang Z, Klimeck G. NEMO-3D based atomistic simulation of a double quantum dot structure for spin-blockaded transport Journal of Computational Electronics. 7: 403-406. DOI: 10.1007/S10825-008-0203-9  0.745
2008 Kharche N, Luisier M, Boykin TB, Klimeck G. Electronic structure and transmission characteristics of SiGe nanowires Journal of Computational Electronics. 7: 350-354. DOI: 10.1007/S10825-008-0191-9  0.71
2008 Golizadeh-Mojarad R, Zainuddin ANM, Klimeck G, Datta S. Atomistic non-equilibrium Green's function simulations of Graphene nano-ribbons in the quantum hall regime Journal of Computational Electronics. 7: 407-410. DOI: 10.1007/S10825-008-0190-X  0.815
2008 Neophytou N, Paul A, Lundstrom MS, Klimeck G. Simulations of nanowire transistors: Atomistic vs. effective mass models Journal of Computational Electronics. 7: 363-366. DOI: 10.1007/S10825-008-0188-4  0.642
2007 Rahman R, Wellard CJ, Bradbury FR, Prada M, Cole JH, Klimeck G, Hollenberg LC. High precision quantum control of single donor spins in silicon. Physical Review Letters. 99: 036403. PMID 17678301 DOI: 10.1103/Physrevlett.99.036403  0.676
2007 Liang G, Xiang J, Kharche N, Klimeck G, Lieber CM, Lundstrom M. Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters. 7: 642-6. PMID 17326690 DOI: 10.1021/Nl062596F  0.775
2007 Prada M, Kharche N, Klimeck G. Electronic Structure of Si/InAs Composite Channels Mrs Proceedings. 995. DOI: 10.1557/Proc-0995-G02-03  0.743
2007 Ahmed S, Klimeck G, Kearney D, McLennan M, Anantram MP. Quantum simulations of dual gate mosfet devices: Building and deploying community nanotechnology software tools on nanohub.org International Journal of High Speed Electronics and Systems. 17: 485-494. DOI: 10.1142/S0129156407004679  0.41
2007 Fiori G, Iannaccone G, Klimeck G. Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors Ieee Transactions On Nanotechnology. 6: 475-480. DOI: 10.1109/Tnano.2007.896842  0.332
2007 Boykin TB, Luisier M, Schenk A, Kharche N, Klimeck G. The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires Ieee Transactions On Nanotechnology. 6: 43-47. DOI: 10.1109/Tnano.2006.886776  0.684
2007 Klimeck G, Ahmed S, Kharche N, Korkusinski M, Usman M, Prada M, Boykin T. Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications Ieee Transactions On Electron Devices. 54: 2090-2099. DOI: 10.1109/Ted.2007.904877  0.759
2007 Klimeck G, Ahmed SS, Bae H, Clark S, Haley B, Lee S, Naumov M, Ryu H, Saied F, Prada M, Korkusinski M, Boykin TB, Rahman R. Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks Ieee Transactions On Electron Devices. 54: 2079-2089. DOI: 10.1109/Ted.2007.902879  0.755
2007 Yanik AA, Klimeck G, Datta S. Quantum transport with spin dephasing: A nonequlibrium Green's function approach Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.045213  0.704
2007 Boykin TB, Kharche N, Klimeck G. Brillouin-zone unfolding of perfect supercells having nonequivalent primitive cells illustrated with aSi∕Getight-binding parameterization Physical Review B. 76. DOI: 10.1103/Physrevb.76.035310  0.692
2007 Boykin TB, Kharche N, Klimeck G, Korkusinski M. Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations Journal of Physics: Condensed Matter. 19: 036203. DOI: 10.1088/0953-8984/19/3/036203  0.694
2007 Boykin TB, Kharche N, Klimeck G. Evolution time and energy uncertainty European Journal of Physics. 28: 673-678. DOI: 10.1088/0143-0807/28/4/007  0.65
2007 Neophytou N, Ahmed S, Klimeck G. Influence of vacancies on metallic nanotube transport properties Applied Physics Letters. 90. DOI: 10.1063/1.2736295  0.34
2007 Kharche N, Prada M, Boykin TB, Klimeck G. Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder Applied Physics Letters. 90: 092109. DOI: 10.1063/1.2591432  0.705
2007 Neophytou N, Ahmed S, Klimeck G. Non-equilibrium Green's function (NEGF) simulation of metallic carbon nanotubes including vacancy defects Journal of Computational Electronics. 6: 317-320. DOI: 10.1007/S10825-006-0116-4  0.327
2006 Fiori G, Iannaccone G, Klimeck G. A Three-Dimensional Simulation Study of the Performance of Carbon Nanotube Field-Effect Transistors With Doped Reservoirs and Realistic Geometry Ieee Transactions On Electron Devices. 53: 1782-1788. DOI: 10.1109/Ted.2006.878018  0.399
2006 Luisier M, Schenk A, Fichtner W, Klimeck G. Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations Physical Review B. 74. DOI: 10.1103/Physrevb.74.205323  0.379
2006 Luisier M, Schenk A, Fichtner W, Klimeck G. Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs Journal of Computational Electronics. 6: 199-202. DOI: 10.1007/S10825-006-0108-4  0.457
2006 Mitin V, Vagidov N, Luisier M, Klimeck G. EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires Journal of Computational Electronics. 6: 227-230. DOI: 10.1007/S10825-006-0103-9  0.421
2005 Rahman A, Klimeck G, Lundstrom M, Boykin TB, Vagidov N. Atomistic Approach for Nanoscale Devices at the Scaling Limit and Beyond– Valley Splitting in Si Japanese Journal of Applied Physics. 44: 2187-2190. DOI: 10.1143/Jjap.44.2187  0.445
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. On the Validity of the Parabolic Effective-Mass Approximation for the I–V Calculation of Silicon Nanowire Transistors Ieee Transactions On Electron Devices. 52: 1589-1595. DOI: 10.1109/Ted.2005.850945  0.626
2005 Zheng Y, Rivas C, Lake R, Alam K, Boykin T, Klimeck G. Electronic Properties of Silicon Nanowires Ieee Transactions On Electron Devices. 52: 1097-1103. DOI: 10.1109/Ted.2005.848077  0.617
2005 Martins AS, Boykin TB, Klimeck G, Koiller B. Conduction-band tight-binding description for Si applied to P donors Physical Review B. 72. DOI: 10.1103/Physrevb.72.193204  0.346
2005 Joe YS, Satanin AM, Klimeck G. Interactions of Fano resonances in the transmission of an Aharonov-Bohm ring with two embedded quantum dots in the presence of a magnetic field Physical Review B. 72. DOI: 10.1103/Physrevb.72.115310  0.323
2005 Boykin TB, Klimeck G. Practical application of zone-folding concepts in tight-binding calculations Physical Review B. 71. DOI: 10.1103/Physrevb.71.115215  0.327
2005 Boykin TB, Kharche N, Klimeck G. Allowed wavevectors under the application of incommensurate periodic boundary conditions European Journal of Physics. 27: 5-10. DOI: 10.1088/0143-0807/27/1/002  0.64
2005 Boykin TB, Klimeck G. The discretized Schrödinger equation for the finite square well and its relationship to solid-state physics European Journal of Physics. 26: 865-881. DOI: 10.1088/0143-0807/26/5/020  0.338
2005 Boykin TB, Klimeck G, von Allmen P, Lee S, Oyafuso F. Valley splitting in V-shaped quantum wells Journal of Applied Physics. 97: 113702. DOI: 10.1063/1.1913798  0.419
2005 Wang J, Rahman A, Ghosh A, Klimeck G, Lundstrom M. Performance evaluation of ballistic silicon nanowire transistors with atomic-basis dispersion relations Applied Physics Letters. 86: 093113. DOI: 10.1063/1.1873055  0.651
2005 Lee S, Von Allmen P, Oyafuso F, Klimeck G, Whaley KB. Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots Journal of Applied Physics. 97. DOI: 10.1063/1.1850605  0.347
2005 Green J, Boykin TB, Farmer CD, Garcia M, Ironside CN, Klimeck G, Lake R, Stanley CR. Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model Superlattices and Microstructures. 37: 410-424. DOI: 10.1016/J.Spmi.2005.03.003  0.606
2005 Gardner CL, Klimeck G, Ringhofer C. Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes Journal of Computational Electronics. 3: 95-102. DOI: 10.1007/S10825-004-0314-X  0.431
2004 Rahman A, Klimeck G, Vagidov N, Boykin TB, Lundstrom M. Nanoscale Device Simulation at the Scaling Limit and Beyond The Japan Society of Applied Physics. 2004: 726-727. DOI: 10.7567/Ssdm.2004.A-9-1  0.332
2004 Boykin TB, Klimeck G, Friesen M, Coppersmith SN, Von Allmen P, Oyafuso F, Lee S. Valley splitting in low-density quantum-confined heterostructures studied using tight-binding models Physical Review B - Condensed Matter and Materials Physics. 70: 1-12. DOI: 10.1103/Physrevb.70.165325  0.435
2004 Lee S, Lazarenkova OL, von Allmen P, Oyafuso F, Klimeck G. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots Physical Review B. 70. DOI: 10.1103/Physrevb.70.125307  0.386
2004 Boykin TB, Klimeck G, Oyafuso F. Valence band effective-mass expressions in thesp3d5s*empirical tight-binding model applied to a Si and Ge parametrization Physical Review B. 69. DOI: 10.1103/Physrevb.69.115201  0.337
2004 Boykin TB, Klimeck G. The discretized Schrödinger equation and simple models for semiconductor quantum wells European Journal of Physics. 25: 503-514. DOI: 10.1088/0143-0807/25/4/006  0.35
2004 Lazarenkova OL, von Allmen P, Oyafuso F, Lee S, Klimeck G. Effect of anharmonicity of the strain energy on band offsets in semiconductor nanostructures Applied Physics Letters. 85: 4193-4195. DOI: 10.1063/1.1814810  0.347
2004 Boykin TB, Klimeck G, Eriksson MA, Friesen M, Coppersmith SN, Von Allmen P, Oyafuso F, Lee S. Valley splitting in strained silicon quantum wells Applied Physics Letters. 84: 115-117. DOI: 10.1063/1.1637718  0.452
2003 Sandu T, Klimeck G, Kirk WP. Off-center electron transport in resonant tunneling diodes due to incoherent scattering Physical Review B. 68. DOI: 10.1103/Physrevb.68.115320  0.331
2003 Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114  0.613
2003 Klimeck G. Quantum and semi-classical transport in NEMO 1-D Journal of Computational Electronics. 2: 177-182. DOI: 10.1023/B:Jcel.0000011421.53762.97  0.439
2003 Lazarenkova OL, von Allmen P, Oyafuso F, Lee S, Klimeck G. An atomistic model for the simulation of acoustic phonons, strain distribution, and Grüneisen coefficients in zinc-blende semiconductors Superlattices and Microstructures. 34: 553-556. DOI: 10.1016/J.Spmi.2004.03.057  0.344
2003 Oyafuso F, Klimeck G, Bowen RC, Boykin T, Von Allmen P. Disorder induced broadening in multimillion atom alloyed quantum dot systems Physica Status Solidi C: Conferences. 1149-1152. DOI: 10.1002/Pssc.200303020  0.363
2003 Oyafuso F, Klimeck G, von Allmen P, Boykin T, Bowen RC. Strain effects in large-scale atomistic quantum dot simulations Physica Status Solidi (B). 239: 71-79. DOI: 10.1002/Pssb.200303238  0.411
2002 Klimeck G, Oyafuso F, Boykin TB, Bowen RC, Allmen Pv. Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots Cmes-Computer Modeling in Engineering & Sciences. 3: 601-642. DOI: 10.3970/Cmes.2002.003.601  0.433
2002 Lee S, Kim J, Jönsson L, Wilkins JW, Bryant GW, Klimeck G. Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding Physical Review B. 66: 235307. DOI: 10.1103/Physrevb.66.235307  0.361
2002 Klimeck G. Journal of Computational Electronics. 1: 75-79. DOI: 10.1023/A:1020767811814  0.386
2002 Klimeck G, Oyafuso F, Bowen RC, Boykin TB, Cwik TA, Huang E, Vinyard ES. 3-D atomistic nanoelectronic modeling on high performance clusters: Multimillion atom simulations Superlattices and Microstructures. 31: 171-179. DOI: 10.1006/Spmi.2002.1038  0.419
2001 Lee S, Jönsson L, Wilkins JW, Bryant GW, Klimeck G. Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions Physical Review B. 63. DOI: 10.1103/Physrevb.63.195318  0.436
2001 Klimeck G, Bowen RC, Boykin TB. Off-zone-center or indirect band-gap-like hole transport in heterostructures Physical Review B. 63. DOI: 10.1103/Physrevb.63.195310  0.321
2001 Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500  0.63
2001 Klimeck G, Bowen RC, Boykin TB. Strong wavevector dependence of hole transport in heterostructures Superlattices and Microstructures. 29: 187-216. DOI: 10.1006/Spmi.2000.0973  0.413
2001 Klimeck G. Indirect Bandgap-Like Current Flow in Direct Bandgap Electron Resonant Tunneling Diodes Physica Status Solidi (B). 226: 9-19. DOI: 10.1002/1521-3951(200107)226:1<9::Aid-Pssb9>3.0.Co;2-Y  0.359
2000 Boykin TB, Klimeck G, Bowen RC, Lake R. Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)] Physical Review B. 61: 5033-5033. DOI: 10.1103/Physrevb.61.5033  0.535
2000 Klimeck G, Chris Bowen R, Boykin TB, Cwik TA. sp3s*Tight-binding parameters for transport simulations in compound semiconductors Superlattices and Microstructures. 27: 519-524. DOI: 10.1006/Spmi.2000.0862  0.342
2000 Klimeck G, Bowen RC, Boykin TB, Salazar-Lazaro C, Cwik TA, Stoica A. Si tight-binding parameters from genetic algorithm fitting Superlattices and Microstructures. 27: 77-88. DOI: 10.1006/Spmi.1999.0797  0.419
1999 Boykin TB, Lake RK, Klimeck G, Swaminathan M. Interface effects in tunneling models with identical real and complex dispersions Physical Review B. 59: 7316-7319. DOI: 10.1103/Physrevb.59.7316  0.554
1999 Boykin TB, Bowen RC, Klimeck G, Lear KL. Resonant-tunneling diodes with emitter prewells Applied Physics Letters. 75: 1302-1304. DOI: 10.1063/1.124675  0.39
1998 Klimeck G, Salazar-Lazaro CH, Stoica A, Cwik T. Genetically Engineered Nanostructure Devices Mrs Proceedings. 551. DOI: 10.1557/Proc-551-149  0.469
1998 Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A Generalized Tunneling Formula for Quantum Device Modeling Vlsi Design. 6: 9-12. DOI: 10.1155/1998/84503  0.63
1998 Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) Vlsi Design. 6: 107-110. DOI: 10.1155/1998/43043  0.641
1998 Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing Research Software in a Large Group for the NEMO Project Vlsi Design. 8: 79-86. DOI: 10.1155/1998/35374  0.604
1998 Klimeck G, Lake R, Blanks DK. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations Physical Review B. 58: 7279-7285. DOI: 10.1103/Physrevb.58.7279  0.573
1998 Klimeck G, Lake R, Blanks DK. Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes Semiconductor Science and Technology. 13: A165-A168. DOI: 10.1088/0268-1242/13/8A/047  0.57
1998 Lake R, Klimeck G, Blanks D. Interface roughness and polar optical phonon scattering in RTDs Semiconductor Science and Technology. 13: A163-A164. DOI: 10.1088/0268-1242/13/8A/046  0.573
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  0.602
1997 Boykin TB, Klimeck G, Bowen RC, Lake R. Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results Physical Review B. 56: 4102-4107. DOI: 10.1103/Physrevb.56.4102  0.54
1997 Lake R, Klimeck G, Bowen RC, Jovanovic D. Single and multiband modeling of quantum electron transport through layered semiconductor devices Journal of Applied Physics. 81: 7845-7869. DOI: 10.1063/1.365394  0.633
1997 Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. DOI: 10.1063/1.364151  0.653
1997 Klimeck G, Lake R, Blanks D, Fernando CL, Bowen C, Moise T, Kao YC. The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes Physica Status Solidi (B). 204: 408-411. DOI: 10.1002/1521-3951(199711)204:1<408::Aid-Pssb408>3.0.Co;2-V  0.59
1997 Lake R, Klimeck G, Bowen RC, Jovanovic D, Blanks D, Swaminathan M. Quantum Transport with Band-Structure and Schottky Contacts Physica Status Solidi (B). 204: 354-357. DOI: 10.1002/1521-3951(199711)204:1<354::Aid-Pssb354>3.0.Co;2-V  0.619
1996 Lake R, Klimeck G, Bowen R, Fernando C, Moise T, Kao Y, Leng M. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode Superlattices and Microstructures. 20: 279-285. DOI: 10.1006/Spmi.1996.0079  0.576
1995 Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539-2541. DOI: 10.1063/1.114451  0.633
1994 Klimeck G, Lake R, Datta S, Bryant GW. Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime. Physical Review B. 50: 5484-5496. PMID 9976892 DOI: 10.1103/Physrevb.50.5484  0.667
1994 Klimeck G, Chen G, Datta S. Conductance spectroscopy in coupled quantum dots. Physical Review B. 50: 2316-2324. PMID 9976449 DOI: 10.1103/Physrevb.50.2316  0.541
1994 Chen G, Klimeck G, Datta S, Chen G, Goddard WA. Resonant Tunneling Through Quantum Dot Arrays Physical Review B. 50: 8035-8038. PMID 9974804 DOI: 10.1103/Physrevb.50.8035  0.583
1993 Lake R, Klimeck G, Datta S. Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes. Physical Review B. 47: 6427-6438. PMID 10004608 DOI: 10.1103/Physrevb.47.6427  0.639
1993 Lake R, Klimeck G, Anantram MP, Datta S. Rate equations for the phonon peak in resonant-tunneling structures Physical Review B. 48: 15132-15137. DOI: 10.1103/Physrevb.48.15132  0.663
1992 Lee Y, McLennan M, Klimeck G, Lake R, Datta S. Quantum kinetic analysis of mesoscopic systems: Linear response Superlattices and Microstructures. 11: 137-140. DOI: 10.1016/0749-6036(92)90237-Y  0.655
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