Shuling Wang, Ph.D. - Publications

Affiliations: 
2002 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering

16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2005 Ma F, Wang S, Campbell JC. Shot noise suppression in avalanche photodiodes. Physical Review Letters. 95: 176604. PMID 16383852 DOI: 10.1103/Physrevlett.95.176604  0.506
2005 Duan N, Wang S, Ma F, Li N, Campbell JC, Wang C, Coldren LA. High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region Ieee Photonics Technology Letters. 17: 1719-1721. DOI: 10.1109/Lpt.2005.851903  0.605
2005 Liu M, Wang S, Campbell JC, Beck JD, Wan CF, Kinch MA. Study of diffusion length in two-dimensional HgCdTe avalanche photodiodes by optical beam induced current Journal of Applied Physics. 98. DOI: 10.1063/1.2060948  0.408
2004 Campbell JC, Demiguel S, Ma F, Beck A, Guo X, Wang S, Zheng X, Li X, Beck JD, Kinch MA, Huntington A, Coldren LA, Decobert J, Tscherptner N. Recent advances in avalanche photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 10: 777-787. DOI: 10.1109/Jstqe.2004.833971  0.607
2003 Kwon O, Hayat MM, Wang S, Campbell JC, Holmes A, Pan Y, Saleh BEA, Teich MC. Optimal excess noise reduction in thin heterojunction Al/sub 0.6/Ga/sub 0.4/As-GaAs avalanche photodiodes Ieee Journal of Quantum Electronics. 39: 1287-1296. DOI: 10.1109/Jqe.2003.817671  0.533
2003 Karve G, Zheng X, Zhang X, Li X, Li N, Wang S, Ma F, Holmes A, Campbell JC, Kinsey GS, Boisvert JC, Isshiki TD, Sudharsanan R, Bethune DS, Risk WP. Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode Ieee Journal of Quantum Electronics. 39: 1281-1286. DOI: 10.1109/Jqe.2003.817244  0.614
2003 Wang S, Ma F, Li X, Sidhu R, Zheng X, Sun X, Holmes AL, Campbell JC. Ultra-low noise avalanche photodiodes with a "centered-well" multiplication region Ieee Journal of Quantum Electronics. 39: 375-378. DOI: 10.1109/Jqe.2002.807183  0.541
2003 Hayat MM, Sakoglu U, Kwon O, Wang S, Campbell JC, Saleh BEA, Teich MC. Breakdown probabilities for thin heterostructure avalanche photodiodes Ieee Journal of Quantum Electronics. 39: 179-185. DOI: 10.1109/Jqe.2002.806217  0.496
2003 Wang S, Ma F, Li X, Karve G, Zheng X, Campbell JC. Analysis of breakdown probabilities in avalanche photodiodes using a history-dependent analytical model Applied Physics Letters. 82: 1971-1973. DOI: 10.1063/1.1559946  0.448
2003 Li N, Sidhu R, Li X, Ma F, Zheng X, Wang S, Karve G, Demiguel S, Holmes AL, Campbell JC. InGaAs/InAlAs avalanche photodiode with undepleted absorber Applied Physics Letters. 82: 2175-2177. DOI: 10.1063/1.1559437  0.481
2003 Sun X, Wang S, Zheng XG, Li X, Campbell JC, Holmes AL. 1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise Journal of Applied Physics. 93: 774-776. DOI: 10.1063/1.1526933  0.535
2002 Hayat MM, Kwon O, Wang S, Campbell JC, Saleh BEA, Teich MC. Boundary effects on multiplication noise in thin heterostructure avalanche photodiodes: theory and experiment [Al/sub 0.6/Ga/sub 0.4/As/GaAs] Ieee Transactions On Electron Devices. 49: 2114-2123. DOI: 10.1109/Ted.2002.805573  0.546
2002 Wang S, Sidhu R, Karve G, Ma F, Li X, Zheng XG, Hurst JB, Sun X, Li N, Holmes AL, Campbell JC. A study of low-bias photocurrent gradient of avalanche photodiodes Ieee Transactions On Electron Devices. 49: 2107-2113. DOI: 10.1109/Ted.2002.805233  0.451
2002 Li X, Zheng X, Wang S, Ma F, Campbell JC. Calculation of gain and noise with dead space for GaAs and Al/sub x/Ga/sub 1-x/As avalanche photodiode Ieee Transactions On Electron Devices. 49: 1112-1117. DOI: 10.1109/Ted.2002.1013264  0.513
2002 Sun X, Wang S, Hsu JS, Sidhu R, Zheng XG, Li X, Campbell JC, Holmes AL. GaAsSb: A novel material for near infrared photodetectors on GaAs substrates Ieee Journal On Selected Topics in Quantum Electronics. 8: 817-822. DOI: 10.1109/Jstqe.2002.800848  0.512
2002 Ma F, Wang S, Li X, Anselm KA, Zheng XG, Holmes AL, Campbell JC. Monte Carlo simulation of low-noise avalanche photodiodes with heterojunctions Journal of Applied Physics. 92: 4791-4795. DOI: 10.1063/1.1505987  0.518
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