| Year |
Citation |
Score |
| 2020 |
Kozen AC, Robinson ZR, Glaser ER, Twigg M, Larrabee TJ, Cho H, Prokes SM, Ruppalt LB. In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications. Acs Applied Materials & Interfaces. PMID 32223206 DOI: 10.1021/Acsami.0C01279 |
0.409 |
|
| 2019 |
Woodward JM, Rosenberg SG, Kozen AC, Nepal N, Johnson SD, Wagenbach C, Rowley AH, Robinson ZR, Joress H, Ludwig KF, Eddy CR. Influence of temperature on atomic layer epitaxial growth of indium nitride assessed within situgrazing incidence small-angle x-ray scattering Journal of Vacuum Science & Technology A. 37: 030901. DOI: 10.1116/1.5081919 |
0.417 |
|
| 2019 |
Rosenberg SG, Wagenbach C, Anderson VR, Johnson SD, Nepal N, Kozen AC, Woodward JM, Robinson ZR, Munger M, Joress H, Ludwig KF, Eddy CR. In situ studies of low temperature atomic level processing of GaN surfaces for atomic layer epitaxial growth Journal of Vacuum Science & Technology A. 37: 020928. DOI: 10.1116/1.5080380 |
0.365 |
|
| 2019 |
Rosenberg SG, Pennachio DJ, Wagenbach C, Johnson SD, Nepal N, Kozen AC, Woodward JM, Robinson Z, Joress H, Ludwig KF, Palmstrøm CJ, Eddy CR. Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations Journal of Vacuum Science & Technology A. 37: 020908. DOI: 10.1116/1.5080090 |
0.436 |
|
| 2019 |
Nepal N, Anderson VR, Johnson SD, Downey BP, Meyer DJ, Robinson ZR, Woodward JM, Ludwig KF, Eddy CR. Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering Journal of Vacuum Science & Technology A. 37: 020910. DOI: 10.1116/1.5063340 |
0.394 |
|
| 2018 |
Boris DR, Anderson VR, Nepal N, Johnson SD, Robinson ZR, Kozen AC, Eddy CR, Walton SG. Effect of varying plasma properties on III-nitride film growth by plasma enhanced atomic layer epitaxy Journal of Vacuum Science & Technology A. 36: 051503. DOI: 10.1116/1.5034247 |
0.357 |
|
| 2017 |
Anderson VR, Nepal N, Johnson SD, Robinson ZR, Nath A, Kozen AC, Qadri SB, DeMasi A, Hite JK, Ludwig KF, Eddy CR. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 031508. DOI: 10.1116/1.4979007 |
0.469 |
|
| 2017 |
Nepal N, Anderson VR, Johnson SD, Downey BP, Meyer DJ, DeMasi A, Robinson ZR, Ludwig KF, Eddy CR. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 35: 031504. DOI: 10.1116/1.4978026 |
0.403 |
|
| 2017 |
Johnson SD, Gonzalez CM, Anderson V, Robinson Z, Newman HS, Shin S, Qadri SB. Magnetic and structural properties of sintered bulk pucks and aerosol deposited films of Ti-doped barium hexaferrite for microwave absorption applications Journal of Applied Physics. 122: 024901. DOI: 10.1063/1.4991808 |
0.323 |
|
| 2017 |
Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ. Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Solid-State Electronics. 136: 30-35. DOI: 10.1016/J.Sse.2017.06.018 |
0.345 |
|
| 2016 |
Nath A, Currie M, Boyd AK, Wheeler VD, Koehler AD, Tadjer MJ, Robinson ZR, Sridhara K, Hernandez SC, Wollmershauser JA, Robinson JT, Myers-Ward RL, Rao MV, Gaskill DK. In search of quantum-limited contact resistance: Understanding the intrinsic and extrinsic effects on the graphene-metal interface 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/025013 |
0.456 |
|
| 2016 |
Robinson ZR, Jernigan GG, Wheeler VD, Hernández SC, Eddy CR, Mowll TR, Ong EW, Ventrice CA, Geisler H, Pletikosic I, Yang H, Valla T. Growth and characterization of Al2O3 films on fluorine functionalized epitaxial graphene Journal of Applied Physics. 120. DOI: 10.1063/1.4960803 |
0.721 |
|
| 2015 |
Hite JK, Robinson ZR, Eddy CR, Feigelson BN. Electron backscatter diffraction study of hexagonal boron nitride growth on Cu single-crystal substrates. Acs Applied Materials & Interfaces. 7: 15200-5. PMID 26090544 DOI: 10.1021/Acsami.5B00723 |
0.51 |
|
| 2015 |
Feigelson BN, Bermudez VM, Hite JK, Robinson ZR, Wheeler VD, Sridhara K, Hernández SC. Growth and spectroscopic characterization of monolayer and few-layer hexagonal boron nitride on metal substrates. Nanoscale. 7: 3694-702. PMID 25640166 DOI: 10.1039/C4Nr05557H |
0.447 |
|
| 2015 |
Robinson ZR, Jernigan GG, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Wheeler VD, Myers-Ward RL, Kurt Gaskill D, Eddy CR. Graphene growth on SiC(000-1): Optimization of surface preparation and growth conditions Proceedings of Spie - the International Society For Optical Engineering. 9552. DOI: 10.1117/12.2191616 |
0.6 |
|
| 2015 |
Hite JK, Robinson ZR, Eddy CR, Feigelson BN. Electron Backscatter Diffraction Study of Hexagonal Boron Nitride Growth on Cu Single-Crystal Substrates Acs Applied Materials and Interfaces. 7: 15200-15205. DOI: 10.1021/acsami.5b00723 |
0.373 |
|
| 2015 |
Tyagi P, Robinson ZR, Munson A, Magnuson CW, Chen S, McNeilan JD, Moore RL, Piner RD, Ruoff RS, Ventrice CA. Characterization of graphene films grown on CuNi foil substrates Surface Science. 634: 16-24. DOI: 10.1016/J.Susc.2014.11.019 |
0.719 |
|
| 2015 |
Robinson ZR, Jernigan GG, Currie M, Hite JK, Bussmann KM, Nyakiti LO, Garces NY, Nath A, Rao MV, Wheeler VD, Myers-Ward RL, Wollmershauser JA, Feigelson BN, Eddy CR, Gaskill DK. Challenges to graphene growth on SiC(0001): Substrate effects, hydrogen etching and growth ambient Carbon. 81: 73-82. DOI: 10.1016/J.Carbon.2014.09.025 |
0.623 |
|
| 2014 |
Nath A, Koehler AD, Jernigan GG, Wheeler VD, Hite JK, Hernández SC, Robinson ZR, Garces NY, Myers-Ward RL, Eddy CR, Gaskill DK, Rao MV. Achieving clean epitaxial graphene surfaces suitable for device applications by improved lithographic process Applied Physics Letters. 104. DOI: 10.1063/1.4880937 |
0.518 |
|
| 2014 |
Tadjer MJ, Anderson TJ, Myers-Ward RL, Wheeler VD, Nyakiti LO, Robinson Z, Eddy CR, Gaskill DK, Koehler AD, Hobart KD, Kub FJ. Step edge influence on barrier height and contact area in vertical heterojunctions between epitaxial graphene and n-type 4H-SiC Applied Physics Letters. 104. DOI: 10.1063/1.4866024 |
0.492 |
|
| 2014 |
Robinson ZR, Schmucker SW, McCreary KM, Cobas ED. Chemical Vapor Deposition of Two-Dimensional Crystals Handbook of Crystal Growth: Thin Films and Epitaxy: Second Edition. 3: 785-833. DOI: 10.1016/B978-0-444-63304-0.00019-6 |
0.468 |
|
| 2013 |
Mowll TR, Kadaksham AJ, Robinson ZR, Mead S, Ventrice CA, Goodwin F. Development of an atomic hydrogen system for treatment of EUV mask blanks Proceedings of Spie - the International Society For Optical Engineering. 8679. DOI: 10.1117/12.2011721 |
0.589 |
|
| 2013 |
Robinson ZR, Ong EW, Mowll TR, Tyagi P, Gaskill DK, Geisler H, Ventrice CA. Influence of chemisorbed oxygen on the growth of graphene on Cu(100) by chemical vapor deposition Journal of Physical Chemistry C. 117: 23919-23927. DOI: 10.1021/Jp410142R |
0.726 |
|
| 2012 |
Robinson ZR, Tyagi P, Murray TM, Ventrice CA, Chen S, Munson A, Magnuson CW, Ruoff RS. Substrate grain size and orientation of Cu and Cu-Ni foils used for the growth of graphene films Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3663877 |
0.728 |
|
| 2012 |
Robinson ZR, Tyagi P, Mowll TR, Ventrice CA, Hannon JB. Argon-assisted growth of epitaxial graphene on Cu(111) Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.235413 |
0.735 |
|
| 2008 |
Borst CL, Bennett SG, Robinson ZR, Steinke DR, McTaggart SA, Ryan JG, Lee JU. Oxide/polysilicon CMP process integration for novel graphene and carbon nanotube devices 2008 Proceedings - 13th International Chemical-Mechanical Planarization For Ulsi Multilevel Interconnection Conference, Cmp-Mic 2008. 295-302. |
0.357 |
|
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