| Year |
Citation |
Score |
| 2024 |
Li R, Hussain K, Liao ME, Huynh K, Hoque MSB, Wyant S, Koh YR, Xu Z, Wang Y, Luccioni DP, Cheng Z, Shi J, Lee E, Graham S, Henry A, et al. Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers. Acs Applied Materials & Interfaces. PMID 38315970 DOI: 10.1021/acsami.3c16905 |
0.536 |
|
| 2022 |
Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y, Feng T, Shigekawa N, Cahill DG. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nature Communications. 13: 7201. PMID 36418359 DOI: 10.1038/s41467-022-34943-w |
0.671 |
|
| 2022 |
Cheng Z, Mu F, Ji X, You T, Xu W, Suga T, Ou X, Cahill DG, Graham S. Correction to "Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance". Acs Applied Materials & Interfaces. 14: 22678. PMID 35533285 DOI: 10.1021/acsami.2c04500 |
0.604 |
|
| 2021 |
Malakoutian M, Field DE, Hines NJ, Pasayat S, Graham S, Kuball M, Chowdhury S. Record-Low Thermal Boundary Resistance between Diamond and GaN-on-SiC for Enabling Radiofrequency Device Cooling. Acs Applied Materials & Interfaces. 13: 60553-60560. PMID 34875169 DOI: 10.1021/acsami.1c13833 |
0.326 |
|
| 2021 |
Cheng Z, Li R, Yan X, Jernigan G, Shi J, Liao ME, Hines NJ, Gadre CA, Idrobo JC, Lee E, Hobart KD, Goorsky MS, Pan X, Luo T, Graham S. Experimental observation of localized interfacial phonon modes. Nature Communications. 12: 6901. PMID 34824284 DOI: 10.1038/s41467-021-27250-3 |
0.565 |
|
| 2021 |
Hines NJ, Yates L, Foley BM, Cheng Z, Bougher TL, Goorsky MS, Hobart KD, Feygelson TI, Tadjer MJ, Graham S. Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications. The Review of Scientific Instruments. 92: 044907. PMID 34243450 DOI: 10.1063/5.0039966 |
0.74 |
|
| 2021 |
Cheng Z, Mu F, Ji X, You T, Xu W, Suga T, Ou X, Cahill DG, Graham S. Thermal Visualization of Buried Interfaces Enabled by Ratio Signal and Steady-State Heating of Time-Domain Thermoreflectance. Acs Applied Materials & Interfaces. PMID 34191480 DOI: 10.1021/acsami.1c06212 |
0.662 |
|
| 2021 |
Shi J, Yuan C, Huang HL, Johnson J, Chae C, Wang S, Hanus R, Kim S, Cheng Z, Hwang J, Graham S. Thermal Transport across Metal/β-GaO Interfaces. Acs Applied Materials & Interfaces. PMID 34109790 DOI: 10.1021/acsami.1c05191 |
0.491 |
|
| 2021 |
Hoque MSB, Koh YR, Braun JL, Mamun A, Liu Z, Huynh K, Liao ME, Hussain K, Cheng Z, Hoglund ER, Olson DH, Tomko JA, Aryana K, Galib R, Gaskins JT, ... ... Graham S, et al. High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films. Acs Nano. PMID 33908771 DOI: 10.1021/acsnano.0c09915 |
0.69 |
|
| 2020 |
Cheng Z, Mu F, You T, Xu W, Shi J, Liao ME, Wang Y, Huynh K, Suga T, Goorsky MS, Ou X, Graham S. Thermal Transport across Ion-cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3-SiC Interfaces. Acs Applied Materials & Interfaces. PMID 32909730 DOI: 10.1021/Acsami.0C11672 |
0.626 |
|
| 2020 |
Koh YR, Cheng Z, Mamun A, Hoque MSB, Liu Z, Bai T, Hussain K, Liao ME, Li R, Gaskins JT, Giri A, Tomko J, Braun J, Gaevski M, Lee E, ... ... Graham S, et al. Bulk-like intrinsic phonon thermal conductivity of micrometer thick AlN films. Acs Applied Materials & Interfaces. PMID 32491824 DOI: 10.1021/Acsami.0C03978 |
0.705 |
|
| 2020 |
Cheng Z, Mu F, Yates L, Suga T, Graham S. Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices. Acs Applied Materials & Interfaces. PMID 31986013 DOI: 10.1021/Acsami.9B16959 |
0.654 |
|
| 2020 |
Bai T, Wang Y, Feygelson TI, Tadjer MJ, Hobart KD, Hines NJ, Yates L, Graham S, Anaya J, Kuball M, Goorsky MS. Diamond Seed Size and the Impact on Chemical Vapor Deposition Diamond Thin Film Properties Ecs Journal of Solid State Science and Technology. 9: 053002. DOI: 10.1149/2162-8777/Ab96D8 |
0.385 |
|
| 2020 |
Singh AK, Chou W, Jia X, Wang C, Fuentes-Hernandez C, Kippelen B, Graham S. Impact of interface materials on side permeation in indirect encapsulation of organic electronics Journal of Vacuum Science & Technology A. 38: 033203. DOI: 10.1116/1.5140665 |
0.357 |
|
| 2020 |
Pearson R, Chatterjee B, Kim S, Graham S, Rattner A, Choi S. Guidelines for Reduced-Order Thermal Modeling of Multifinger GaN HEMTs Journal of Electronic Packaging. 142. DOI: 10.1115/1.4046620 |
0.691 |
|
| 2020 |
Pavlidis G, Yates L, Kendig D, Lo C, Marchand H, Barabadi B, Graham S. Thermal Performance of GaN/Si HEMTs Using Near-Bandgap Thermoreflectance Imaging Ieee Transactions On Electron Devices. 67: 822-827. DOI: 10.1109/Ted.2020.2964408 |
0.418 |
|
| 2020 |
Cheng Z, Koh YR, Mamun A, Shi J, Bai T, Huynh K, Yates L, Liu Z, Li R, Lee E, Liao ME, Wang Y, Yu HM, Kushimoto M, Luo T, ... ... Graham S, et al. Experimental observation of high intrinsic thermal conductivity of AlN Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.044602 |
0.634 |
|
| 2020 |
Pavlidis G, Hilton AM, Brown JL, Heller ER, Graham S. Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging Journal of Applied Physics. 128: 75705. DOI: 10.1063/5.0014407 |
0.413 |
|
| 2020 |
Pahinkar DG, Basnet P, West MP, Zivasatienraj B, Weidenbach A, Doolittle WA, Vogel E, Graham S. Experimental and computational analysis of thermal environment in the operation of HfO2 memristors Aip Advances. 10: 035127. DOI: 10.1063/1.5141347 |
0.39 |
|
| 2020 |
Yuan C, Zhang Y, Montgomery R, Kim S, Shi J, Mauze A, Itoh T, Speck JS, Graham S. Modeling and analysis for thermal management in gallium oxide field-effect transistors Journal of Applied Physics. 127: 154502. DOI: 10.1063/1.5141332 |
0.416 |
|
| 2020 |
West MP, Basnet P, Pahinkar DG, Montgomery RH, Graham S, Vogel EM. Impact of the thermal environment on the analog temporal response of HfOx-based neuromorphic devices Applied Physics Letters. 116: 063504. DOI: 10.1063/1.5139627 |
0.432 |
|
| 2020 |
Cheng Z, Wheeler VD, Bai T, Shi J, Tadjer MJ, Feygelson T, Hobart KD, Goorsky MS, Graham S. Integration of polycrystalline Ga2O3 on diamond for thermal management Applied Physics Letters. 116: 62105. DOI: 10.1063/1.5125637 |
0.476 |
|
| 2020 |
Basnet P, Pahinkar DG, West MP, Perini CJ, Graham S, Vogel EM. Substrate dependent resistive switching in amorphous-HfOx memristors: an experimental and computational investigation Journal of Materials Chemistry C. 8: 5092-5101. DOI: 10.1039/C9Tc06736A |
0.351 |
|
| 2020 |
Cheng Z, Koh YR, Ahmad H, Hu R, Shi J, Liao ME, Wang Y, Bai T, Li R, Lee E, Clinton EA, Matthews CM, Engel Z, Yates L, Luo T, ... ... Graham S, et al. Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Communications Physics. 3. DOI: 10.1038/S42005-020-0383-6 |
0.593 |
|
| 2019 |
Mu F, Cheng Z, Shi J, Shin S, Xu B, Shiomi J, Graham S, Suga T. High Thermal Boundary Conductance across Heterogeneous GaN-SiC Bonded Interfaces. Acs Applied Materials & Interfaces. PMID 31408316 DOI: 10.1021/Acsami.9B10106 |
0.647 |
|
| 2019 |
Cheng Z, Bai T, Shi J, Feng T, Wang Y, Mecklenburg M, Li C, Hobart KD, Feygelson T, Tadjer MJ, Pate BB, Foley B, Yates L, Pantelides ST, Cola BA, ... ... Graham S, et al. Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy. Acs Applied Materials & Interfaces. PMID 31042348 DOI: 10.1021/Acsami.9B02234 |
0.763 |
|
| 2019 |
Gaskins JT, Kotsonis G, Giri A, Ju S, Rohskopf A, Wang Y, Bai T, Sachet E, Shelton CT, Liu Z, Cheng Z, Foley BM, Graham S, Luo T, Henry A, et al. Corrrection to Thermal Boundary Conductance Across Heteroepitaxial ZnO/GaN Interfaces: Assessment of the Phonon Gas Model. Nano Letters. PMID 30673236 DOI: 10.1021/Acs.Nanolett.9B00022 |
0.761 |
|
| 2019 |
Pahinkar DG, Boteler L, Ibitayo D, Narumanchi S, Paret P, DeVoto D, Major J, Graham S. Liquid-Cooled Aluminum Silicon Carbide Heat Sinks for Reliable Power Electronics Packages Journal of Electronic Packaging. 141: 41001. DOI: 10.1115/1.4043406 |
0.336 |
|
| 2019 |
Cutivet A, Pavlidis G, Hassan B, Bouchilaoun M, Rodriguez C, Soltani A, Graham S, Boone F, Maher H. Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements Ieee Transactions On Electron Devices. 66: 2139-2145. DOI: 10.1109/Ted.2019.2906943 |
0.365 |
|
| 2019 |
Pavlidis G, Som S, Barrett J, Struble W, Graham S. The Impact of Temperature on GaN/Si HEMTs Under RF Operation Using Gate Resistance Thermometry Ieee Transactions On Electron Devices. 66: 330-336. DOI: 10.1109/Ted.2018.2876207 |
0.372 |
|
| 2019 |
Agbim KA, Pahinkar DG, Graham S. Integration of Jet Impingement Cooling With Direct Bonded Copper Substrates for Power Electronics Thermal Management Ieee Transactions On Components, Packaging and Manufacturing Technology. 9: 226-234. DOI: 10.1109/Tcpmt.2018.2863714 |
0.439 |
|
| 2019 |
Singh AK, Graham S. Ultrabarrier Films for Packaging Flexible Electronics: Examining the Role of Thin-Film Technology Ieee Nanotechnology Magazine. 13: 30-36. DOI: 10.1109/Mnano.2018.2869179 |
0.334 |
|
| 2019 |
Pavlidis G, Kim SH, Abid I, Zegaoui M, Medjdoub F, Graham S. The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs Ieee Electron Device Letters. 40: 1060-1063. DOI: 10.1109/Led.2019.2915984 |
0.449 |
|
| 2019 |
Cheng Z, Weidenbach A, Feng T, Tellekamp MB, Howard S, Wahila MJ, Zivasatienraj B, Foley B, Pantelides ST, Piper LFJ, Doolittle W, Graham S. Diffuson-driven ultralow thermal conductivity in amorphous
Nb2O5
thin films Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.025002 |
0.669 |
|
| 2019 |
Luo H, Wang B, Kim K, Graham S, Pierron ON, Zhu T. Kinetics of environmentally assisted cracking in SiNx barrier films Applied Physics Letters. 115: 51901. DOI: 10.1063/1.5111400 |
0.309 |
|
| 2019 |
Cheng Z, Tanen N, Chang C, Shi J, McCandless J, Muller D, Jena D, Xing HG, Graham S. Significantly reduced thermal conductivity in β-(Al0.1Ga0.9)2O3/Ga2O3 superlattices Applied Physics Letters. 115: 092105. DOI: 10.1063/1.5108757 |
0.426 |
|
| 2019 |
Cheng Z, Yates L, Shi J, Tadjer MJ, Hobart KD, Graham S. Thermal conductance across β-Ga2O3-diamond van der Waals heterogeneous interfaces Apl Materials. 7: 31118. DOI: 10.1063/1.5089559 |
0.478 |
|
| 2019 |
Kim K, Pierron ON, Graham S. Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films Journal of Applied Physics. 125: 45301. DOI: 10.1063/1.5061780 |
0.304 |
|
| 2019 |
Ha M, Graham S. Pool boiling enhancement using vapor channels in microporous surfaces International Journal of Heat and Mass Transfer. 143: 118532. DOI: 10.1016/J.Ijheatmasstransfer.2019.118532 |
0.334 |
|
| 2019 |
Kumar N, Hirschey J, LaClair TJ, Gluesenkamp KR, Graham S. Review of stability and thermal conductivity enhancements for salt hydrates Journal of Energy Storage. 24: 100794. DOI: 10.1016/J.Est.2019.100794 |
0.357 |
|
| 2018 |
Singh AK, Adstedt K, Brown B, Singh PM, Graham S. Development of ALD Coatings for Harsh Environment Applications. Acs Applied Materials & Interfaces. PMID 30585719 DOI: 10.1021/Acsami.8B11557 |
0.375 |
|
| 2018 |
Gaskins JT, Kotsonis G, Giri A, Ju S, Rohskopf A, Wang Y, Bai T, Sachet E, Shelton CT, Liu Z, Cheng Z, Foley B, Graham S, Luo T, Henry A, et al. Thermal boundary conductance across heteroepitaxial ZnO/GaN interfaces: Assessment of the phonon gas model. Nano Letters. PMID 30412411 DOI: 10.1021/Acs.Nanolett.8B02837 |
0.777 |
|
| 2018 |
Yates L, Anderson J, Gu X, Lee C, Bai T, Mecklenburg M, Aoki T, Goorsky MS, Kuball M, Piner EL, Graham S. Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices. Acs Applied Materials & Interfaces. PMID 29939717 DOI: 10.1021/Acsami.8B07014 |
0.418 |
|
| 2018 |
Sood A, Cheaito R, Bai T, Kwon H, Wang Y, Li C, Yates L, Bougher T, Graham S, Asheghi M, Goorsky M, Goodson KE. Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries. Nano Letters. PMID 29631399 DOI: 10.1021/Acs.Nanolett.8B00534 |
0.405 |
|
| 2018 |
Cheng Z, Bougher T, Bai T, Wang SY, Li C, Yates L, Foley B, Goorsky MS, Cola BA, Faili F, Graham S. Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multi-frequency and Multi-spot-size Time-Domain Thermoreflectance. Acs Applied Materials & Interfaces. PMID 29328632 DOI: 10.1021/Acsami.7B16812 |
0.76 |
|
| 2018 |
Pavlidis G, Kendig D, Heller ER, Graham S. Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing Ieee Transactions On Electron Devices. 65: 1753-1758. DOI: 10.1109/Ted.2018.2818621 |
0.433 |
|
| 2018 |
Tamdogan E, Pavlidis G, Graham S, Arik M. A Comparative Study on the Junction Temperature Measurements of LEDs With Raman Spectroscopy, Microinfrared (IR) Imaging, and Forward Voltage Methods Ieee Transactions On Components, Packaging and Manufacturing Technology. 8: 1914-1922. DOI: 10.1109/Tcpmt.2018.2799488 |
0.365 |
|
| 2018 |
Cheng Z, Foley BM, Bougher T, Yates L, Cola BA, Graham S. Thermal rectification in thin films driven by gradient grain microstructure Journal of Applied Physics. 123: 095114. DOI: 10.1063/1.5021681 |
0.704 |
|
| 2018 |
Dallas J, Pavlidis G, Chatterjee B, Lundh JS, Ji M, Kim J, Kao T, Detchprohm T, Dupuis RD, Shen S, Graham S, Choi S. Thermal characterization of gallium nitride p-i-n diodes Applied Physics Letters. 112: 73503. DOI: 10.1063/1.5006796 |
0.679 |
|
| 2018 |
Mallow A, Abdelaziz O, Graham S. Thermal charging performance of enhanced phase change material composites for thermal battery design International Journal of Thermal Sciences. 127: 19-28. DOI: 10.1016/J.Ijthermalsci.2017.12.027 |
0.406 |
|
| 2018 |
Dhumane R, Mallow A, Qiao Y, Gluesenkamp KR, Graham S, Ling J, Radermacher R. Enhancing the thermosiphon-driven discharge of a latent heat thermal storage system used in a personal cooling device International Journal of Refrigeration-Revue Internationale Du Froid. 88: 599-613. DOI: 10.1016/J.Ijrefrig.2018.02.005 |
0.374 |
|
| 2017 |
Kim K, Graham S, Pierron ON. Note: A single specimen channel crack growth technique applied to brittle thin films on polymer substrates. The Review of Scientific Instruments. 88: 036102. PMID 28372385 DOI: 10.1063/1.4977473 |
0.302 |
|
| 2017 |
Pour Shahid Saeed Abadi P, Maschmann MR, Hodson SL, Fisher TS, Baur JW, Graham S, Cola BA. Mechanical Behavior of Carbon Nanotube Forests Grown With Plasma Enhanced Chemical Vapor Deposition: Pristine and Conformally Coated Journal of Engineering Materials and Technology. 139. DOI: 10.1115/1.4035622 |
0.31 |
|
| 2017 |
Pavlidis G, Pavlidis S, Heller ER, Moore EA, Vetury R, Graham S. Characterization of AlGaN/GaN HEMTs Using Gate Resistance Thermometry Ieee Transactions On Electron Devices. 64: 78-83. DOI: 10.1109/Ted.2016.2625264 |
0.382 |
|
| 2017 |
Perrotta A, Fuentes-Hernandez C, Khan TM, Kippelen B, Creatore M, Graham S. Near room-temperature direct encapsulation of organic photovoltaics by plasma-based deposition techniques Journal of Physics D. 50: 24003. DOI: 10.1088/1361-6463/50/2/024003 |
0.357 |
|
| 2017 |
Tsai M, Zhang S, Campbell PM, Dasari RR, Ba X, Tarasov A, Graham S, Barlow S, Marder SR, Vogel EM. Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules Chemistry of Materials. 29: 7296-7304. DOI: 10.1021/Acs.Chemmater.7B01998 |
0.328 |
|
| 2017 |
Anaya J, Bai T, Wang Y, Li C, Goorsky M, Bougher TL, Yates L, Cheng Z, Graham S, Hobart KD, Feygelson TI, Tadjer MJ, Anderson TJ, Pate BB, Kuball M. Simultaneous determination of the lattice thermal conductivity and grain/grain thermal resistance in polycrystalline diamond Acta Materialia. 139: 215-225. DOI: 10.1016/J.Actamat.2017.08.007 |
0.397 |
|
| 2017 |
Hancock BL, Nazari M, Anderson J, Piner E, Faili F, Oh S, Francis D, Twitchen D, Graham S, Holtz MW. Ultraviolet and visible micro-Raman and micro-photoluminescence spectroscopy investigations of stress on a 75-mm GaN-on-diamond wafer Physica Status Solidi (C). DOI: 10.1002/Pssc.201600247 |
0.355 |
|
| 2016 |
Kolesov VA, Fuentes-Hernandez C, Chou WF, Aizawa N, Larrain FA, Wang M, Perrotta A, Choi S, Graham S, Bazan GC, Nguyen TQ, Marder SR, Kippelen B. Solution-based electrical doping of semiconducting polymer films over a limited depth. Nature Materials. PMID 27918568 DOI: 10.1038/Nmat4818 |
0.379 |
|
| 2016 |
Wang CY, Fuentes-Hernandez C, Yun M, Singh AK, Dindar A, Choi S, Graham S, Kippelen B. Organic field-effect transistors with a bilayer gate dielectric comprising an oxide nanolaminate grown by atomic layer deposition. Acs Applied Materials & Interfaces. PMID 27760296 DOI: 10.1021/Acsami.6B10603 |
0.339 |
|
| 2016 |
Kim H, Singh AK, Wang CY, Fuentes-Hernandez C, Kippelen B, Graham S. Experimental investigation of defect-assisted and intrinsic water vapor permeation through ultrabarrier films. The Review of Scientific Instruments. 87: 033902. PMID 27036786 DOI: 10.1063/1.4942510 |
0.354 |
|
| 2016 |
Kelly LL, Racke DA, Schulz P, Li H, Winget P, Kim H, Ndione P, Sigdel AK, Brédas JL, Berry JJ, Graham S, Monti OL. Spectroscopy and control of near-surface defects in conductive thin film ZnO. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 094007. PMID 26871256 DOI: 10.1088/0953-8984/28/9/094007 |
0.348 |
|
| 2016 |
Campbell PM, Tarasov A, Joiner CA, Tsai MY, Pavlidis G, Graham S, Ready WJ, Vogel EM. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2. Nanoscale. PMID 26743173 DOI: 10.1039/C5Nr06180F |
0.376 |
|
| 2016 |
Rosenberger MR, Jones JP, Heller ER, Graham S, King WP. Nanometer-Scale Strain Measurements in AlGaN/GaN High-Electron Mobility Transistors During Pulsed Operation Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2566926 |
0.407 |
|
| 2016 |
Bougher TL, Yates L, Lo CF, Johnson W, Graham S, Cola BA. Thermal boundary resistance in GaN films measured by time domain thermoreflectance with robust monte carlo uncertainty estimation Nanoscale and Microscale Thermophysical Engineering. 20: 22-32. DOI: 10.1080/15567265.2016.1154630 |
0.383 |
|
| 2016 |
Hancock BL, Nazari M, Anderson J, Piner E, Faili F, Oh S, Twitchen D, Graham S, Holtz M. Ultraviolet micro-Raman spectroscopy stress mapping of a 75-mm GaN-on-diamond wafer Applied Physics Letters. 108. DOI: 10.1063/1.4952596 |
0.321 |
|
| 2016 |
Moerman D, Kim H, Colbert AE, Graham S, Ginger DS. The impact of ultra-thin titania interlayers on open circuit voltage and carrier lifetime in thin film solar cells Applied Physics Letters. 108: 113301. DOI: 10.1063/1.4944049 |
0.347 |
|
| 2016 |
Nazari M, Hancock BL, Anderson J, Savage A, Piner EL, Graham S, Faili F, Oh S, Francis D, Twitchen D, Holtz M. Near-ultraviolet micro-Raman study of diamond grown on GaN Applied Physics Letters. 108. DOI: 10.1063/1.4940200 |
0.344 |
|
| 2016 |
Mallow AM, Abdelaziz O, Graham S. Thermal charging study of compressed expanded natural graphite/phase change material composites Carbon. 109: 495-504. DOI: 10.1016/J.Carbon.2016.08.030 |
0.401 |
|
| 2016 |
Sang L, Knesting KM, Bulusu A, Sigdel AK, Giordano AJ, Marder SR, Berry JJ, Graham S, Ginger DS, Pemberton JE. Effect of time and deposition method on quality of phosphonic acid modifier self-assembled monolayers on indium zinc oxide Applied Surface Science. 389: 190-198. DOI: 10.1016/J.Apsusc.2016.06.183 |
0.332 |
|
| 2016 |
Odukomaiya A, Abu-Heiba A, Gluesenkamp KR, Abdelaziz O, Jackson RK, Daniel C, Graham S, Momen AM. Thermal analysis of near-isothermal compressed gas energy storage system Applied Energy. 179: 948-960. DOI: 10.1016/J.Apenergy.2016.07.059 |
0.651 |
|
| 2015 |
Racke DA, Kelly LL, Kim H, Schulz P, Sigdel A, Berry JJ, Graham S, Nordlund D, Monti OL. Disrupted Attosecond Charge Carrier Delocalization at a Hybrid Organic/Inorganic Semiconductor Interface. The Journal of Physical Chemistry Letters. 6: 1935-41. PMID 26263273 DOI: 10.1021/Acs.Jpclett.5B00787 |
0.302 |
|
| 2015 |
Matz DL, Sojoudi H, Graham S, Pemberton JE. Signature Vibrational Bands for Defects in CVD Single-Layer Graphene by Surface-Enhanced Raman Spectroscopy. The Journal of Physical Chemistry Letters. 6: 964-9. PMID 26262853 DOI: 10.1021/Jz5027272 |
0.678 |
|
| 2015 |
Beechem T, Yates L, Graham S. Invited Review Article: Error and uncertainty in Raman thermal conductivity measurements. The Review of Scientific Instruments. 86: 041101. PMID 25933834 DOI: 10.1063/1.4918623 |
0.658 |
|
| 2015 |
Tarasov A, Zhang S, Tsai MY, Campbell PM, Graham S, Barlow S, Marder SR, Vogel EM. Controlled doping of large-area trilayer MoS2 with molecular reductants and oxidants. Advanced Materials (Deerfield Beach, Fla.). 27: 1175-81. PMID 25580926 DOI: 10.1002/Adma.201404578 |
0.303 |
|
| 2015 |
Donmezer N, Islam M, Yoder PD, Graham S. The Impact of Nongray Thermal Transport on the Temperature of AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 62: 2437-2444. DOI: 10.1109/Ted.2015.2443859 |
0.407 |
|
| 2015 |
Bulusu A, Singh A, Wang CY, Dindar A, Fuentes-Hernandez C, Kim H, Cullen D, Kippelen B, Graham S. Engineering the mechanical properties of ultrabarrier films grown by atomic layer deposition for the encapsulation of printed electronics Journal of Applied Physics. 118. DOI: 10.1063/1.4928855 |
0.383 |
|
| 2015 |
Kim H, Ou KL, Wu X, Ndione PF, Berry J, Lambert Y, Mélin T, Armstrong NR, Graham S. Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics Journal of Materials Chemistry A. 3: 17332-17343. DOI: 10.1039/C5Ta04687D |
0.363 |
|
| 2015 |
Macleod BA, Tremolet De Villers BJ, Schulz P, Ndione PF, Kim H, Giordano AJ, Zhu K, Marder SR, Graham S, Berry JJ, Kahn A, Olson DC. Stability of inverted organic solar cells with ZnO contact layers deposited from precursor solutions Energy and Environmental Science. 8: 592-601. DOI: 10.1039/C4Ee02488E |
0.354 |
|
| 2015 |
Matz DL, Sojoudi H, Graham S, Pemberton JE. Signature vibrational bands for defects in CVD single-layer graphene by surface-enhanced Raman spectroscopy Journal of Physical Chemistry Letters. 6: 964-969. DOI: 10.1021/jz5027272 |
0.647 |
|
| 2015 |
Gaskins JT, Bulusu A, Giordano AJ, Duda JC, Graham S, Hopkins PE. Thermal Conductance across Phosphonic Acid Molecules and Interfaces: Ballistic versus Diffusive Vibrational Transport in Molecular Monolayers Journal of Physical Chemistry C. 119: 20931-20939. DOI: 10.1021/Acs.Jpcc.5B05462 |
0.569 |
|
| 2015 |
Jones JP, Heller E, Dorsey D, Graham S. Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects Microelectronics Reliability. DOI: 10.1016/J.Microrel.2015.08.019 |
0.367 |
|
| 2015 |
Bulusu A, Graham S, Bahre H, Behm H, Böke M, Dahlmann R, Hopmann C, Winter J. The Mechanical Behavior of ALD-Polymer Hybrid Films Under Tensile Strain Advanced Engineering Materials. 17: 1057-1067. DOI: 10.1002/Adem.201400431 |
0.307 |
|
| 2014 |
Sadeghi-Tohidi F, Samet D, Graham S, Pierron ON. Comparison of the cohesive and delamination fatigue properties of atomic-layer-deposited alumina and titania ultrathin protective coatings deposited at 200 °C. Science and Technology of Advanced Materials. 15: 015003. PMID 27877645 DOI: 10.1088/1468-6996/15/1/015003 |
0.325 |
|
| 2014 |
Chen X, Donmezer FN, Kumar S, Graham S. A Numerical Study on Comparing the Active and Passive Cooling of AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 61: 4056-4061. DOI: 10.1109/Ted.2014.2360504 |
0.761 |
|
| 2014 |
Donmezer N, Graham S. The Impact of Noncontinuum Thermal Transport on the Temperature of AlGaN/GaN HFETs Ieee Transactions On Electron Devices. 61: 2041-2048. DOI: 10.1109/Ted.2014.2318672 |
0.387 |
|
| 2014 |
Paniagua SA, Baltazar J, Sojoudi H, Mohapatra SK, Zhang S, Henderson CL, Graham S, Barlow S, Marder SR. Production of heavily n- and p-doped CVD graphene with solution-processed redox-active metal-organic species Materials Horizons. 1: 111-115. DOI: 10.1039/C3Mh00035D |
0.685 |
|
| 2014 |
Kim N, Graham S, Hwang K. Enhancement of the barrier performance in organic/inorganic multilayer thin-film structures by annealing of the parylene layer Materials Research Bulletin. 58: 24-27. DOI: 10.1016/J.Materresbull.2014.03.022 |
0.691 |
|
| 2014 |
Donmezer N, Graham S. A multiscale thermal modeling approach for ballistic and diffusive heat transport in two dimensional domains International Journal of Thermal Sciences. 76: 235-244. DOI: 10.1016/J.Ijthermalsci.2013.09.004 |
0.327 |
|
| 2014 |
Yamaguchi H, Granstrom J, Nie W, Sojoudi H, Fujita T, Voiry D, Chen M, Gupta G, Mohite AD, Graham S, Chhowalla M. Reduced graphene oxide thin films as ultrabarriers for organic electronics Advanced Energy Materials. 4. DOI: 10.1002/Aenm.201300986 |
0.711 |
|
| 2014 |
Sojoudi H, Baltazar J, Tolbert L, Henderson C, Graham S. Formation of Air Stable Graphene p-n-p Junctions Using an Amine-Containing Polymer Coating Advanced Materials Interfaces. 1: 1400378. DOI: 10.1002/Admi.201400378 |
0.698 |
|
| 2014 |
Schulz P, Kelly LL, Winget P, Li H, Kim H, Ndione PF, Sigdel AK, Berry JJ, Graham S, Brédas JL, Kahn A, Monti OLA. Tailoring electron-transfer barriers for zinc oxide/C 60 fullerene interfaces Advanced Functional Materials. 24: 7381-7389. DOI: 10.1002/Adfm.201401794 |
0.358 |
|
| 2014 |
Tarasov A, Campbell PM, Tsai MY, Hesabi ZR, Feirer J, Graham S, Ready WJ, Vogel EM. Highly uniform trilayer molybdenum disulfide for wafer-scale device fabrication Advanced Functional Materials. 24: 6389-6400. DOI: 10.1002/Adfm.201401389 |
0.385 |
|
| 2014 |
Baltazar J, Sojoudi H, Paniagua SA, Zhang S, Lawson RA, Marder SR, Graham S, Tolbert LM, Henderson CL. Photochemical doping and tuning of the work function and dirac point in graphene using photoacid and photobase generators Advanced Functional Materials. 24: 5147-5156. DOI: 10.1002/Adfm.201303796 |
0.675 |
|
| 2013 |
Taphouse JH, Bougher TL, Singh V, Abadi PP, Graham S, Cola BA. Carbon nanotube thermal interfaces enhanced with sprayed on nanoscale polymer coatings. Nanotechnology. 24: 105401. PMID 23425973 DOI: 10.1088/0957-4484/24/10/105401 |
0.348 |
|
| 2013 |
Bulusu A, Paniagua SA, MacLeod BA, Sigdel AK, Berry JJ, Olson DC, Marder SR, Graham S. Efficient modification of metal oxide surfaces with phosphonic acids by spray coating. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 3935-42. PMID 23421597 DOI: 10.1021/La303354T |
0.311 |
|
| 2013 |
Pathak S, Mohan N, Abadi PPSS, Graham S, Cola BA, Greer JR. Compressive response of vertically aligned carbon nanotube films gleaned from in situ flat-punch indentations Journal of Materials Research. 28: 984-997. DOI: 10.1557/Jmr.2012.366 |
0.328 |
|
| 2013 |
Sojoudi H, Graham S. Transfer-Free Selective Area Synthesis of Graphene Using Solid-State Self-Segregation of Carbon In Cu/Ni Bilayers Ecs Journal of Solid State Science and Technology. 2: M17-M21. DOI: 10.1149/2.016306Jss |
0.661 |
|
| 2013 |
Meyer C, Cheng E, Grayer J, Mueller D, Triplett G, Roberts D, Graham S. Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength Journal of Vacuum Science and Technology. 31. DOI: 10.1116/1.4828357 |
0.314 |
|
| 2013 |
Natarajan S, Habtemichael Y, Graham S. A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes Journal of Heat Transfer-Transactions of the Asme. 135: 91201. DOI: 10.1115/1.4024359 |
0.368 |
|
| 2013 |
Nguyen JJ, Bougher TL, Pour Shahid Saeed Abadi P, Sharma A, Graham S, Cola BA. Postgrowth Microwave Treatment to Align Carbon Nanotubes Journal of Micro and Nano-Manufacturing. 1. DOI: 10.1115/1.4023162 |
0.364 |
|
| 2013 |
Natarajan S, Ha M, Graham S. Measuring the Thermal Resistance in Light Emitting Diodes Using a Transient Thermal Analysis Technique Ieee Transactions On Electron Devices. 60: 2548-2555. DOI: 10.1109/Ted.2013.2271485 |
0.395 |
|
| 2013 |
Choi S, Heller ER, Dorsey D, Vetury R, Graham S. Thermometry of AlGaN/GaN HEMTs using multispectral raman features Ieee Transactions On Electron Devices. 60: 1898-1904. DOI: 10.1109/Ted.2013.2255102 |
0.649 |
|
| 2013 |
Choi S, Heller ER, Dorsey D, Vetury R, Graham S. The impact of bias conditions on self-heating in AlGaN/GaN HEMTs Ieee Transactions On Electron Devices. 60: 159-162. DOI: 10.1109/Ted.2012.2224115 |
0.666 |
|
| 2013 |
Bulusu A, Kim H, Samet D, Graham S. Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers Journal of Physics D. 46: 84014. DOI: 10.1088/0022-3727/46/8/084014 |
0.339 |
|
| 2013 |
Choi S, Heller E, Dorsey D, Vetury R, Graham S. The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 114. DOI: 10.1063/1.4826524 |
0.628 |
|
| 2013 |
Choi S, Heller E, Dorsey D, Vetury R, Graham S. Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors Journal of Applied Physics. 113. DOI: 10.1063/1.4794009 |
0.641 |
|
| 2013 |
Kim N, Graham S. Development of highly flexible and ultra-low permeation rate thin-film barrier structure for organic electronics Thin Solid Films. 547: 57-62. DOI: 10.1016/J.Tsf.2013.05.007 |
0.711 |
|
| 2013 |
Heller E, Choi S, Dorsey D, Vetury R, Graham S. Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs Microelectronics Reliability. 53: 872-877. DOI: 10.1016/J.Microrel.2013.03.004 |
0.673 |
|
| 2012 |
Kim Y, Bulusu A, Giordano AJ, Marder SR, Dauskardt R, Graham S. Experimental study of interfacial fracture toughness in a SiN(x)/PMMA barrier film. Acs Applied Materials & Interfaces. 4: 6711-9. PMID 23127918 DOI: 10.1021/Am301880Y |
0.325 |
|
| 2012 |
Sojoudi H, Baltazar J, Tolbert LM, Henderson CL, Graham S. Creating graphene p-n junctions using self-assembled monolayers. Acs Applied Materials & Interfaces. 4: 4781-6. PMID 22909428 DOI: 10.1021/Am301138V |
0.686 |
|
| 2012 |
Zhou Y, Fuentes-Hernandez C, Shim J, Meyer J, Giordano AJ, Li H, Winget P, Papadopoulos T, Cheun H, Kim J, Fenoll M, Dindar A, Haske W, Najafabadi E, Khan TM, ... ... Graham S, et al. A universal method to produce low-work function electrodes for organic electronics. Science (New York, N.Y.). 336: 327-32. PMID 22517855 DOI: 10.1126/Science.1218829 |
0.679 |
|
| 2012 |
Kim N, Graham S. Fabrication and Characterization of High-Performance Thin-Film Encapsulation for Organic Electronics Transactions of the Korean Society of Mechanical Engineers B. 36: 1049-1054. DOI: 10.3795/Ksme-B.2012.36.10.1049 |
0.716 |
|
| 2012 |
Sojoudi H, Baltazar J, Henderson C, Graham S. Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 041213. DOI: 10.1116/1.4731472 |
0.709 |
|
| 2012 |
Hildreth O, Cola B, Graham S, Wong CP. Conformally coating vertically aligned carbon nanotube arrays using thermal decomposition of iron pentacarbonyl Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 03D101. DOI: 10.1116/1.3692724 |
0.321 |
|
| 2012 |
Wasniewski JR, Altman DH, Hodson SL, Fisher TS, Bulusu A, Graham S, Cola BA. Characterization of Metallically Bonded Carbon Nanotube-Based Thermal Interface Materials Using a High Accuracy 1D Steady-State Technique Journal of Electronic Packaging, Transactions of the Asme. 134. DOI: 10.1115/1.4005909 |
0.412 |
|
| 2012 |
Mallow A, Abdelaziz O, Kalaitzidou K, Graham S. Investigation of the stability of paraffin-exfoliated graphite nanoplatelet composites for latent heat thermal storage systems Journal of Materials Chemistry. 22: 24469-24476. DOI: 10.1039/C2Jm35112A |
0.378 |
|
| 2012 |
Baltazar J, Sojoudi H, Paniagua SA, Kowalik J, Marder SR, Tolbert LM, Graham S, Henderson CL. Facile formation of graphene P-N junctions using self-assembled monolayers Journal of Physical Chemistry C. 116: 19095-19103. DOI: 10.1021/Jp3045737 |
0.689 |
|
| 2012 |
Park B, Choi S, Graham S, Reichmanis E. Memory and photovoltaic elements in organic field effect transistors with donor/acceptor planar-hetero junction interfaces Journal of Physical Chemistry C. 116: 9390-9397. DOI: 10.1021/Jp300708Z |
0.621 |
|
| 2012 |
Kim N, Potscavage WJ, Sundaramoothi A, Henderson C, Kippelen B, Graham S. A correlation study between barrier film performance and shelf lifetime of encapsulated organic solar cells Solar Energy Materials and Solar Cells. 101: 140-146. DOI: 10.1016/J.Solmat.2012.02.002 |
0.684 |
|
| 2012 |
Kim Y, Kim H, Graham S, Dyer A, Reynolds JR. Durable polyisobutylene edge sealants for organic electronics and electrochemical devices Solar Energy Materials and Solar Cells. 100: 120-125. DOI: 10.1016/J.Solmat.2011.12.012 |
0.34 |
|
| 2012 |
Ha M, Graham S. Development of a thermal resistance model for chip-on-board packaging of high power LED arrays Microelectronics Reliability. 52: 836-844. DOI: 10.1016/J.Microrel.2012.02.005 |
0.412 |
|
| 2012 |
Pant B, Choi S, Baumert EK, Allen BL, Graham S, Gall K, Pierron ON. MEMS-Based Nanomechanics: Influence of MEMS Design on Test Temperature Experimental Mechanics. 52: 607-617. DOI: 10.1007/S11340-011-9526-8 |
0.658 |
|
| 2011 |
Deane JE, Graham SC, Kim NN, Stein PE, McNair R, Cachón-González MB, Cox TM, Reada RJ. Insights into Krabbe disease from structures of galactocerebrosidase Proceedings of the National Academy of Sciences of the United States of America. 108: 15169-15173. PMID 21876145 DOI: 10.1073/Pnas.1105639108 |
0.617 |
|
| 2011 |
Park B, Kim YJ, Graham S, Reichmanis E. Change in electronic states in the accumulation layer at interfaces in a poly(3-hexylthiophene) field-effect transistor and the impact of encapsulation Acs Applied Materials and Interfaces. 3: 3545-3551. PMID 21863841 DOI: 10.1021/Am200760M |
0.397 |
|
| 2011 |
Kumar S, Cola BA, Jackson R, Graham S. A Review of Carbon Nanotube Ensembles as Flexible Electronics and Advanced Packaging Materials Journal of Electronic Packaging. 133. DOI: 10.1115/1.4004220 |
0.697 |
|
| 2011 |
Sridharan S, Christensen A, Venkatachalam A, Graham S, Yoder PD. Temperature- and Doping-Dependent Anisotropic Stationary Electron Velocity in Wurtzite GaN Ieee Electron Device Letters. 32: 1522-1524. DOI: 10.1109/Led.2011.2164611 |
0.314 |
|
| 2010 |
Cross R, Cola BA, Fisher T, Xu X, Gall K, Graham S. A metallization and bonding approach for high performance carbon nanotube thermal interface materials. Nanotechnology. 21: 445705. PMID 20935353 DOI: 10.1088/0957-4484/21/44/445705 |
0.403 |
|
| 2010 |
Jackson RK, Munro A, Nebesny K, Armstrong N, Graham S. Evaluation of transparent carbon nanotube networks of homogeneous electronic type. Acs Nano. 4: 1377-84. PMID 20201542 DOI: 10.1021/Nn9010076 |
0.681 |
|
| 2010 |
Christensen A, Graham S. Multiscale Lattice Boltzmann Modeling of Phonon Transport in Crystalline Semiconductor Materials Numerical Heat Transfer Part B-Fundamentals. 57: 89-109. DOI: 10.1080/10407790903582942 |
0.319 |
|
| 2010 |
Greenstein A, Hudiono Y, Graham S, Nair S. Effects of nonframework metal cations and phonon scattering mechanisms on the thermal transport properties of polycrystalline zeolite LTA films Journal of Applied Physics. 107. DOI: 10.1063/1.3327419 |
0.679 |
|
| 2009 |
Beechem T, Christensen A, Green DS, Graham S. Assessment of stress contributions in GaN high electron mobility transistors of differing substrates using Raman spectroscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3267157 |
0.657 |
|
| 2009 |
Kim N, Potscavage WJ, Domercq B, Kippelen B, Graham S. A hybrid encapsulation method for organic electronics Applied Physics Letters. 94: 163308. DOI: 10.1063/1.3115144 |
0.698 |
|
| 2009 |
Jackson R, Graham S. Specific contact resistance at metal/carbon nanotube interfaces Applied Physics Letters. 94: 12109. DOI: 10.1063/1.3067819 |
0.661 |
|
| 2009 |
Christensen A, Graham S. Thermal effects in packaging high power light emitting diode arrays Applied Thermal Engineering. 29: 364-371. DOI: 10.1016/J.Applthermaleng.2008.03.019 |
0.38 |
|
| 2008 |
Hopkins PE, Norris PM, Stevens RJ, Beechem TE, Graham S. Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface Journal of Heat Transfer. 130. DOI: 10.1115/1.2897344 |
0.74 |
|
| 2008 |
Beechem T, Christensen A, Graham S, Green D. Micro-Raman thermometry in the presence of complex stresses in GaN devices Journal of Applied Physics. 103. DOI: 10.1063/1.2940131 |
0.637 |
|
| 2008 |
Beechem T, Graham S. Temperature and doping dependence of phonon lifetimes and decay pathways in GaN Journal of Applied Physics. 103: 93507. DOI: 10.1063/1.2912819 |
0.657 |
|
| 2008 |
Green DS, Vembu B, Hepper D, Gibb SR, Jin D, Vetury R, Shealy JB, Beechem LT, Graham S. GaN HEMT thermal behavior and implications for reliability testing and analysis Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2026-2029. DOI: 10.1002/Pssc.200778722 |
0.37 |
|
| 2008 |
Jackson R, Domercq B, Jain R, Kippelen B, Graham S. Stability of Doped Transparent Carbon Nanotube Electrodes Advanced Functional Materials. 18: 2548-2554. DOI: 10.1002/Adfm.200800324 |
0.704 |
|
| 2007 |
Beechem T, Graham S, Kearney SP, Phinney LM, Serrano JR. Invited Article: Simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy. The Review of Scientific Instruments. 78: 061301. PMID 17614598 DOI: 10.1063/1.2738946 |
0.623 |
|
| 2007 |
Christensen A, Ha M, Graham S. Thermal management methods for compact high power LED arrays Proceedings of Spie. 6669. DOI: 10.1117/12.741934 |
0.42 |
|
| 2007 |
Abel MR, Graham S, Serrano JR, Kearney SP, Phinney LM. Raman thermometry of polysilicon microelectro-mechanical systems in the presence of an evolving stress Journal of Heat Transfer. 129: 329-334. DOI: 10.1115/1.2409996 |
0.363 |
|
| 2007 |
Abel MR, Wright TL, King WP, Graham S. Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy Ieee Transactions On Components and Packaging Technologies. 30: 200-208. DOI: 10.1109/Tcapt.2007.897993 |
0.453 |
|
| 2007 |
Hsu SC, Pong BJ, Li WH, Beechem TE, Graham S, Liu CY. Stress relaxation in GaN by transfer bonding on Si substrates Applied Physics Letters. 91: 251114. DOI: 10.1063/1.2821224 |
0.615 |
|
| 2007 |
Hudiono Y, Greenstein A, Saha-Kuete C, Olson B, Graham S, Nair S. Effects of composition and phonon scattering mechanisms on thermal transport in MFI zeolite films Journal of Applied Physics. 102. DOI: 10.1063/1.2776006 |
0.684 |
|
| 2007 |
Beechem T, Graham S, Hopkins P, Norris P. Role of interface disorder on thermal boundary conductance using a virtual crystal approach Applied Physics Letters. 90: 054104. DOI: 10.1063/1.2437685 |
0.705 |
|
| 2007 |
Lee J, Wright TL, Abel MR, Sunden EO, Marchenkov A, Graham S, King WP. Thermal conduction from microcantilever heaters in partial vacuum Journal of Applied Physics. 101: 014906. DOI: 10.1063/1.2403862 |
0.388 |
|
| 2007 |
Jin C, Zhou H, Graham S, Narayan RJ. In situ Raman spectroscopy of annealed diamondlike carbon-metal composite films Applied Surface Science. 253: 6487-6492. DOI: 10.1016/J.Apsusc.2007.01.022 |
0.322 |
|
| 2006 |
Sunden E, Moon JK, Wong CP, King WP, Graham S. Microwave assisted patterning of vertically aligned carbon nanotubes onto polymer substrates Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24: 1947. DOI: 10.1116/1.2221320 |
0.349 |
|
| 2006 |
Lee J, Beechem T, Wright TL, Nelson BA, Graham S, King WP. Electrical, thermal, and mechanical characterization of silicon microcantilever heaters Journal of Microelectromechanical Systems. 15: 1644-1655. DOI: 10.1109/Jmems.2006.886020 |
0.665 |
|
| 2006 |
Borca-Tasciuc T, Borca-Tasciuc DA, Graham S, Goods SH, Kelly JJ, Yang NYC. Annealing effects on mechanical and transport properties of Ni and Ni-Alloy electrodeposits Journal of Microelectromechanical Systems. 15: 1051-1059. DOI: 10.1109/Jmems.2006.879704 |
0.334 |
|
| 2006 |
Allen A, Cannon A, Lee J, King WP, Graham S. Flexible microdevices based on carbon nanotubes Journal of Micromechanics and Microengineering. 16: 2722-2729. DOI: 10.1088/0960-1317/16/12/027 |
0.349 |
|
| 2006 |
Cannon AH, Allen AC, Graham S, King WP. Molding ceramic microstructures on flat and curved surfaces with and without embedded carbon nanotubes Journal of Micromechanics and Microengineering. 16: 2554-2563. DOI: 10.1088/0960-1317/16/12/006 |
0.356 |
|
| 2006 |
Greenstein AM, Graham S, Hudiono YC, Nair S. Thermal properties and lattice dynamics of polycrystalline MFI zeolite films Nanoscale and Microscale Thermophysical Engineering. 10: 321-331. DOI: 10.1080/15567260601009171 |
0.414 |
|
| 2006 |
Allen AC, Sunden E, Cannon A, Graham S, King W. Nanomaterial transfer using hot embossing for flexible electronic devices Applied Physics Letters. 88: 083112. DOI: 10.1063/1.2178414 |
0.369 |
|
| 2006 |
Sunden EO, Wright TL, Lee J, King WP, Graham S. Room-temperature chemical vapor deposition and mass detection on a heated atomic force microscope cantilever Applied Physics Letters. 88: 033107. DOI: 10.1063/1.2164916 |
0.361 |
|
| 2006 |
Kane MH, Strassburg M, Fenwick WE, Asghar A, Senawiratne J, Azamat D, Hu Z, Malguth E, Graham S, Perera U, Gehlhoff W, Hoffmann A, Dietz N, Summers CJ, Ferguson IT. Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2237-2240. DOI: 10.1002/Pssc.200565434 |
0.323 |
|
| 2005 |
Christensen A, Nicol D, Ferguson I, Graham S. Thermal design considerations in the packaging of GaN based light emitting diodes Proceedings of Spie. 5941: 594118. DOI: 10.1117/12.625956 |
0.426 |
|
| 2005 |
Christensen A, Doolittle WA, Graham S. Heat dissipation in high-power GaN electronics on thermally resistive substrates Ieee Transactions On Electron Devices. 52: 1683-1688. DOI: 10.1109/Ted.2005.851815 |
0.465 |
|
| 2005 |
Kim N, Domercq B, Yoo S, Christensen A, Kippelen B, Graham S. Thermal transport properties of thin films of small molecule organic semiconductors Applied Physics Letters. 87: 241908. DOI: 10.1063/1.2140478 |
0.737 |
|
| 2005 |
Olson BW, Graham S, Chen K. A practical extension of the 3ω method to multilayer structures Review of Scientific Instruments. 76: 53901. DOI: 10.1063/1.1896619 |
0.392 |
|
| 2004 |
Graham S, Kelley J, Yang N, Borca-Tasciuc T. The role of microstructure in the electrical and thermal conductivity of Ni-alloys for LIGA microsystems Microsystem Technologies. 10: 510-516. DOI: 10.1007/S00542-004-0383-6 |
0.351 |
|
| 2003 |
Graham S, McDowell DL, Lara-Curzio E, Dinwiddie RB, Wang H, Porter W. Nondestructive Characterization of Thermal Shock and Oxidation-Induced Damage by Flash Diffusivity Journal of Composite Materials. 37: 73-87. DOI: 10.1177/0021998303037001994 |
0.535 |
|
| 2003 |
Graham S, McDowell DL. Numerical analysis of the transverse thermal conductivity of composites with imperfect interfaces Journal of Heat Transfer. 125: 389-393. DOI: 10.1115/1.1561814 |
0.519 |
|
| 2003 |
Wong C-C, Graham S. Investigating the thermal response of a micro-optical shutter Ieee Transactions On Components and Packaging Technologies. 26: 324-331. DOI: 10.1109/Tcapt.2003.815095 |
0.405 |
|
| 2003 |
Gokhale A, Agarwal H, Balasundaram A, Horstemeyer M, Graham S. Quantitative Characterization of Particle Rotations During Plastic Deformation of Two Wrought Aluminum Alloys Microscopy and Microanalysis. 9: 760-761. DOI: 10.1017/S1431927603443808 |
0.449 |
|
| 2003 |
Balasundaram A, Gokhale A, Graham S, Horstemeyer M. Three-dimensional particle cracking damage development in an Al–Mg-base wrought alloy Materials Science and Engineering: A. 355: 368-383. DOI: 10.1016/S0921-5093(03)00103-5 |
0.46 |
|
| 2003 |
Agarwal H, Gokhale AM, Graham S, Horstemeyer MF. Void growth in 6061-aluminum alloy under triaxial stress state Materials Science and Engineering A. 341: 35-42. DOI: 10.1016/S0921-5093(02)00073-4 |
0.493 |
|
| 2002 |
Clayton JD, Schroeter BM, McDowell DL, Graham S. Distributions of stretch and rotation in polycrystalline OFHC Cu Journal of Engineering Materials and Technology, Transactions of the Asme. 124: 302-312. DOI: 10.1115/1.1479354 |
0.488 |
|
| 2002 |
Balasundaram A, Shan Z, Gokhale AM, Graham S, Horstemeyer M. Particle rotations during plastic deformation of 5086 aluminum alloy Materials Characterization. 48: 363-369. DOI: 10.1016/S1044-5803(02)00280-2 |
0.461 |
|
| 2002 |
Agrawal H, Gokhale A, Graham S, Horstemeyer M, Bamman D. Rotations of brittle particles during plastic deformation of ductile alloys Materials Science and Engineering: A. 328: 310-316. DOI: 10.1016/S0921-5093(01)01833-0 |
0.463 |
|
| 2002 |
Agarwal H, Gokhale AM, Graham S, Horstemeyer MF. Quantitative characterization of three-dimensional damage evolution in a wrought Al-alloy under tension and compression Metallurgical and Materials Transactions A. 33: 2599-2606. DOI: 10.1007/S11661-002-0381-1 |
0.466 |
|
| 2002 |
Agarwal H, Gokhale AM, Graham S, Horstemeyer MF. Anisotropy of intermetallic particle cracking damage evolution in an Al-Mg-Si base wrought aluminum alloy under uniaxial compression Metallurgical and Materials Transactions A. 33: 3443-3448. DOI: 10.1007/S11661-002-0331-Y |
0.463 |
|
| 1999 |
Graham S, McDowell DL, Dinwiddie RB. Multidimensional flash diffusivity measurements of orthotropic materials International Journal of Thermophysics. 20: 691-707. DOI: 10.1023/A:1022677625872 |
0.52 |
|
| 1998 |
Butler GC, Graham S, McDowell DL, Stock SR, Ferney VC. Application of the Taylor Polycrystal Plasticity Model to Complex Deformation Experiments Journal of Engineering Materials and Technology. 120: 197-205. DOI: 10.1115/1.2812342 |
0.475 |
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