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Silvia H. Chan - Publications

Affiliations: 
2012- Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
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28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Sayed I, Liu W, Romanczyk B, Georgieva J, Chan S, Keller S, Mishra UK. Improved operation stability of in-situ AlSiO dielectric grown on (000-1) N-polar GaN by MOCVD Applied Physics Express. 13: 61010. DOI: 10.35848/1882-0786/Ab93A3  0.785
2020 Liu W, Sayed I, Georgieva J, Chan S, Keller S, Mishra UK. A systematic and quantitative analysis of the bulk and interfacial properties of the AlSiO dielectric on N-polar GaN using capacitance–voltage methods Journal of Applied Physics. 128: 74101. DOI: 10.1063/5.0012289  0.471
2019 Sayed I, Liu W, Chan S, Gupta C, Li H, Keller S, Mishra UK. Flatband voltage stability and time to failure of MOCVD-grown SiO 2 and Si 3 N 4 dielectrics on N-polar GaN Applied Physics Express. 12: 121001. DOI: 10.7567/1882-0786/Ab4D39  0.761
2019 Sayed I, Bonef B, Liu W, Chan S, Georgieva J, Speck JS, Keller S, Mishra UK. Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN Applied Physics Letters. 115: 172104. DOI: 10.1063/1.5125788  0.505
2019 Sayed I, Liu W, Chan S, Gupta C, Guidry M, Li H, Keller S, Mishra U. Net negative fixed interface charge for Si3N4 and SiO2 grown in situ on 000-1 N-polar GaN Applied Physics Letters. 115: 32103. DOI: 10.1063/1.5111148  0.801
2019 Gupta C, Chan SH, Pasayat SS, Keller S, Mishra UK. Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices Journal of Applied Physics. 125: 124101. DOI: 10.1063/1.5082652  0.717
2018 Chan SH, Bisi D, Tahhan M, Gupta C, DenBaars SP, Keller S, Zanoni E, Mishra UK. Comparing electrical characteristics of in situ and ex situ Al2O3/GaN interfaces formed by metalorganic chemical vapor deposition Applied Physics Express. 11: 41002. DOI: 10.7567/Apex.11.041002  0.798
2018 Ji D, Li W, Agarwal A, Chan SH, Haller J, Bisi D, Labrecque M, Gupta C, Cruse B, Lal R, Keller S, Mishra UK, Chowdhury S. Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch Ieee Electron Device Letters. 39: 1030-1033. DOI: 10.1109/Led.2018.2843335  0.777
2018 Ji D, Gupta C, Agarwal A, Chan SH, Lund C, Li W, Keller S, Mishra UK, Chowdhury S. Large-Area In-Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) Ieee Electron Device Letters. 39: 711-714. DOI: 10.1109/Led.2018.2813312  0.794
2018 Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. Corrections to “In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN Substrates’ [Mar 17 353-355] Ieee Electron Device Letters. 39: 316-316. DOI: 10.1109/Led.2017.2788598  0.79
2017 Gupta C, Chan SH, Agarwal A, Hatui N, Keller S, Mishra UK. First Demonstration of AlSiO as Gate Dielectric in GaN FETs; Applied to a High Performance OG-FET Ieee Electron Device Letters. 38: 1575-1578. DOI: 10.1109/Led.2017.2756926  0.836
2017 Gupta C, Ji D, Chan SH, Agarwal A, Leach W, Keller S, Chowdhury S, Mishra UK. Impact of Trench Dimensions on the Device Performance of GaN Vertical Trench MOSFETs Ieee Electron Device Letters. 38: 1559-1562. DOI: 10.1109/Led.2017.2749540  0.802
2017 Gupta C, Lund C, Chan SH, Agarwal A, Liu J, Enatsu Y, Keller S, Mishra UK. In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates Ieee Electron Device Letters. 38: 353-355. DOI: 10.1109/Led.2017.2649599  0.823
2017 Chan SH, Bisi D, Liu X, Yeluri R, Tahhan M, Keller S, DenBaars SP, Meneghini M, Mishra UK. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN Journal of Applied Physics. 122: 174101. DOI: 10.1063/1.5009757  0.785
2017 Chan SH, Keller S, Koksaldi OS, Gupta C, DenBaars SP, Mishra UK. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane Journal of Crystal Growth. 464: 54-58. DOI: 10.1016/J.Jcrysgro.2016.11.096  0.789
2016 Chan SH, Tahhan M, Liu X, Bisi D, Gupta C, Koksaldi O, Li H, Mates T, DenBaars SP, Keller S, Mishra UK. Metalorganic chemical vapor deposition and characterization of (Al,Si)O dielectrics for GaN-based devices Japanese Journal of Applied Physics. 55. DOI: 10.7567/Jjap.55.021501  0.766
2016 Gupta C, Chan SH, Lund C, Agarwal A, Koksaldi OS, Liu J, Enatsu Y, Keller S, Mishra UK. Comparing electrical performance of GaN trench-gate MOSFETs with a-plane and m-plane sidewall channels Applied Physics Express. 9: 121001. DOI: 10.7567/Apex.9.121001  0.748
2016 Tahhan M, Nedy J, Chan SH, Lund C, Li H, Gupta G, Keller S, Mishra U. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944054  0.767
2016 Gupta C, Chan SH, Enatsu Y, Agarwal A, Keller S, Mishra UK. OG-FET: An In-Situ ${O}$ xide, ${G}$ aN Interlayer-Based Vertical Trench MOSFET Ieee Electron Device Letters. 37: 1601-1604. DOI: 10.1109/Led.2016.2616508  0.816
2016 Bisi D, Chan SH, Tahhan M, Koksaldi OS, Keller S, Meneghini M, Meneghesso G, Zanoni E, Mishra UK. Quality and reliability of in-situ Al2O3 MOS capacitors for GaN-based power devices Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 2016: 119-122. DOI: 10.1109/ISPSD.2016.7520792  0.356
2016 Gupta C, Chan SH, Enatsu Y, Agarwal A, Keller S, Mishra UK. A novel device design to lower the on-resistance in GaN trench MOSFETs Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548466  0.694
2016 Chan SH, Keller S, Tahhan M, Li H, Romanczyk B, Denbaars SP, Mishra UK. High electron mobility recovery in AlGaN/GaN 2DEG channels regrown on etched surfaces Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/6/065008  0.802
2016 Bisi D, Chan SH, Liu X, Yeluri R, Keller S, Meneghini M, Meneghesso G, Zanoni E, Mishra UK. On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors Applied Physics Letters. 108. DOI: 10.1063/1.4944466  0.792
2015 Li H, Keller S, Chan SH, Lu J, Denbaars SP, Mishra UK. Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/5/055015  0.72
2015 Keller S, Lund C, Whyland T, Hu Y, Neufeld C, Chan S, Wienecke S, Wu F, Nakamura S, Speck JS, Denbaars SP, Mishra UK. InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105020  0.771
2014 Liu X, Kim J, Suntrup DJ, Wienecke S, Tahhan M, Yeluri R, Chan SH, Lu J, Li H, Keller S, Mishra UK. In situ metalorganic chemical vapor deposition of Al2O 3 on N-face GaN and evidence of polarity induced fixed charge Applied Physics Letters. 104. DOI: 10.1063/1.4886768  0.74
2014 Liu X, Chan SH, Wu F, Li Y, Keller S, Speck JS, Mishra UK. Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity Journal of Crystal Growth. 408: 78-84. DOI: 10.1016/J.Jcrysgro.2014.09.029  0.583
2013 Kim DK, Fafarman AT, Diroll BT, Chan SH, Gordon TR, Murray CB, Kagan CR. Solution-based stoichiometric control over charge transport in nanocrystalline CdSe devices. Acs Nano. 7: 8760-70. PMID 24047327 DOI: 10.1021/Nn403132X  0.405
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