| Year |
Citation |
Score |
| 2009 |
Paraskevopoulos KM, Hatzikraniotis E, Vinga ES, Ozer M, Anagnostopoulos A, Polychroniadis EK. n–p transformation in TlBi(1−x)SbxTe2 system Journal of Alloys and Compounds. 467: 65-71. DOI: 10.1016/J.Jallcom.2007.12.029 |
0.369 |
|
| 2003 |
Anagnostopoulos A, Bogevolnov V, Ivankiv I, Shevchenko O, Perepelkin A, Yafyasov A. The electrophysical properties of the surface layer of the (TlBiSe2)1-x -(TlBiS2)x mixed crystals Chaos Solitons & Fractals. 17: 225-229. DOI: 10.1016/S0960-0779(02)00345-4 |
0.341 |
|
| 2002 |
Özer M, Kalkan N, Kyritsi K, Paraskevopoulos K, Anagnostopoulos A, Stergioudis G, Polychroniadis E. The Influence of Tl4Bi2S5 Precipitates on the Crystalline TlBiS2 Properties Physica Status Solidi (a). 193: 3-11. DOI: 10.1002/1521-396X(200209)193:1<3::Aid-Pssa3>3.0.Co;2-G |
0.394 |
|
| 2002 |
Anagnostopoulos A, Bogevolnov VB, Ivankiv IM, Shevchenko OY, Perepelkin AD, Yafyasov AM. The Electrophysical Properties of the Surface Layer of the Semiconductor TlBiSe2 Physica Status Solidi B-Basic Solid State Physics. 231: 451-456. DOI: 10.1002/1521-3951(200206)231:2<451::Aid-Pssb451>3.0.Co;2-V |
0.337 |
|
| 2000 |
Marinova V, Shurulinkov S, Daviti M, Paraskevopoulos K, Anagnostopoulos A. Refractive index measurements of mixed HgBrxI2−x single crystals Optical Materials. 14: 95-99. DOI: 10.1016/S0925-3467(99)00129-9 |
0.353 |
|
| 2000 |
Moctar COE, Kambas K, Marsillac S, Anagnostopoulos A, Bernède JC, Benchouck K. Optical properties of CuAlX2 (X=Se, Te) thin films obtained by annealing of copper, aluminum and chalcogen layers sequentially deposited Thin Solid Films. 371: 195-200. DOI: 10.1016/S0040-6090(00)00985-8 |
0.373 |
|
| 1996 |
Daviti M, Paraskevopoulos KM, Anagnostopoulos A, Polychroniadis EK. Growth, optical and electrical characterization of HgBr1.16I0.84 single crystals Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment. 380: 62-65. DOI: 10.1016/S0168-9002(96)00330-0 |
0.392 |
|
| 1994 |
Gallos L, Anagnostopoulos A, Argyrakis P. Conduction anisotropy in layered semiconductors Physical Review B. 50: 14643-14646. PMID 9975699 DOI: 10.1103/Physrevb.50.14643 |
0.363 |
|
| 1989 |
Hanias M, Anagnostopoulos A, Kambas K, Spyridelis J. On the non-linear properties of TlInX2 (X = S, Se, Te) ternary compounds Physica B-Condensed Matter. 160: 154-160. DOI: 10.1016/0921-4526(89)90050-1 |
0.42 |
|
| 1986 |
Anagnostopoulos A, Kambas K, Spyridelis J. On the optical and electrical properties of the Zn3In2S6 layered compound Materials Research Bulletin. 21: 407-413. DOI: 10.1016/0025-5408(86)90005-X |
0.459 |
|
| 1986 |
Kambas K, Anagnostopoulos A, Floss B, Spyridelis J. On the optical absorption edge in the CdInGaS 4layered compound at low temperatures Physica Status Solidi (a). 95. DOI: 10.1002/Pssa.2210950256 |
0.413 |
|
| 1985 |
Kambas K, Anagnostopoulos A, Ves S, Ploss B, Spyridelis J. Optical Absorption Edge Investigation of CdIn2S4 and β‐In2S3 Compounds Physica Status Solidi B-Basic Solid State Physics. 127: 201-208. DOI: 10.1002/Pssb.2221270119 |
0.365 |
|
| 1984 |
Anagnostopoulos A, Kambas K, Ploss B. Optical Measurements and Temperature Dependence of the Energy Gap in ZnIn2S4 Layered Compound Physica Status Solidi B-Basic Solid State Physics. 123. DOI: 10.1002/Pssb.2221230259 |
0.423 |
|
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